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    Method and apparatus for gas abatement
    2.
    发明授权
    Method and apparatus for gas abatement 有权

    公开(公告)号：US10187966B2

    公开(公告)日：2019-01-22

    申请号：US15147974

    申请日：2016-05-06

    Applicant: Applied Materials, Inc.

    Inventor： Rongping Wang ,  Jibing Zeng ,  David Muquing Hou ,  Michael S. Cox ,  Zheng Yuan ,  James L'Heureux

    IPC: H05H1/46 ,  H05H1/24 ,  H01J37/32

    Abstract: Embodiments disclosed herein include a plasma source, an abatement system and a vacuum processing system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source includes a dielectric tube and a coil antenna surrounding the tube. The coil antenna includes a plurality of turns, and at least one turn is shorted. Selectively shorting one or more turns of the coil antenna helps reduce the inductance of the coil antenna, allowing higher power to be supplied to the coil antenna that covers more processing volume. Higher power supplied to the coil antenna and larger processing volume lead to an improved DRE.

    Load lock chamber designs for high-throughput processing system
    5.
    发明授权
    Load lock chamber designs for high-throughput processing system 有权
    加载锁定室设计用于高通量处理系统

    公开(公告)号：US09022715B2

    公开(公告)日：2015-05-05

    申请号：US14029307

    申请日：2013-09-17

    Applicant: Applied Materials, Inc.

    Inventor： Alexander S. Polyak ,  James L'Heureux ,  Christopher T. Lane ,  Susanne Schlaefer ,  Juergen Henrich ,  Josef Thomas Hoog ,  Calvin R. Augason

    IPC: B65G53/46 ,  H01L21/677 ,  H01L21/67

    CPC classification number: H01L21/677 ,  H01L21/67201

    Abstract: Methods and apparatus for transferring one or more substrates from a first pressure environment to a second pressure environment is provided. In one embodiment, a load lock chamber is provided. The load lock chamber comprises a first circular housing, and a second circular housing disposed within and movable relative to the first circular housing, one of the first circular housing or the second circular housing comprising a plurality of discrete regions, wherein at least a portion of the plurality of discrete regions are in selective fluid communication with one of at least two vacuum pumps based on the angular position of the second circular housing relative to the first circular housing.

    Abstract translation: 提供了将一个或多个基板从第一压力环境转移到第二压力环境的方法和装置。 在一个实施例中，提供了一种加载锁定室。 负载锁定室包括第一圆形壳体和设置在第一圆形壳体内并可相对于第一圆形壳体移动的第二圆形壳体，第一圆形壳体或第二圆形壳体中的一个包括多个离散区域，其中至少一部分 基于第二圆形壳体相对于第一圆形壳体的角位置，多个离散区域与至少两个真空泵中的一个选择性流体连通。

    Reduction of Br2 and Cl2 in semiconductor processes
    6.
    发明授权
    Reduction of Br2 and Cl2 in semiconductor processes 有权

    公开(公告)号：US11551917B2

    公开(公告)日：2023-01-10

    申请号：US16793983

    申请日：2020-02-18

    Applicant: Applied Materials, Inc.

    Inventor： Joseph A. Van Gompel ,  James L'Heureux

    IPC: H01L21/3065 ,  H01J37/32

    Abstract: One or more embodiments described herein relate to abatement systems for reducing Br2 and Cl2 in semiconductor processes. In embodiments described herein, semiconductor etch processes are performed within process chambers. Thereafter, fluorinated greenhouse gases (F-GHGs), HBr, and Cl2 gases exit the process chamber and enter a plasma reactor. Reagent gases are delivered from a reagent gas delivery apparatus to the plasma reactor to mix with the process gases. Radio frequency (RF) power is applied to the plasma reactor, which adds energy and “excites” the gases within the process chamber. When HBr is energized, it forms Br2. Br2 and Cl2 are corrosive and toxic. However, the addition of H2O in the plasma reactor quenches the Br2 and Cl2 emissions, as the H atoms recombine with the Br atoms and the Cl atoms to form HBr and HCl. HBr and HCl are readily water-soluble and removed through a wet scrubber.

    Apparatus for gaseous byproduct abatement and foreline cleaning
    7.
    发明授权
    Apparatus for gaseous byproduct abatement and foreline cleaning 有权

    公开(公告)号：US10889891B2

    公开(公告)日：2021-01-12

    申请号：US16382197

    申请日：2019-04-12

    Applicant: Applied Materials, Inc.

    Inventor： James L'Heureux

    IPC: B01D53/68 ,  C23C16/44 ,  H01L21/67

    Abstract: Embodiments disclosed herein include an abatement system and method for abating compounds produced in semiconductor processes. The abatement system includes a remote plasma source for generating an oxidizing plasma for treating exhaust gases from a deposition process performed in the processing chamber, the treatment assisting with the trapping particles in an exhaust cooling apparatus. The remote plasma source then generates a cleaning plasma for treating exhaust gases from a cleaning process performed in the processing chamber, the cleaning plasma reacting with the trapped particles in the exhaust cooling apparatus and cleaning the exhaust cooling apparatus.

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