公开(公告)号：US20160118260A1

公开(公告)日：2016-04-28

申请号：US14525555

申请日：2014-10-28

Applicant: Applied Materials, Inc.

Inventor： Bencherki MEBARKI ,  Annamalai LAKSHMANAN ,  Kaushal K. SINGH ,  Andrew COCKBURN ,  Ludovic GODET ,  Paul F. MA ,  Mehul NAIK

IPC: H01L21/285 ,  H01L21/768 ,  H01J37/32 ,  H01L21/268

CPC classification number: H01J37/32192 ,  C23C16/42 ,  C23C16/56 ,  H01J37/32091 ,  H01J37/32321 ,  H01J37/32339 ,  H01L21/2686 ,  H01L21/28556 ,  H01L21/32053 ,  H01L21/76885

Abstract: Methods and apparatus for forming a metal silicide as nanowires for back-end interconnection structures for semiconductor applications are provided. In one embodiment, the method includes forming a metal silicide layer on a substrate by a chemical vapor deposition process or a physical vapor deposition process, thermal treating the metal silicide layer in a processing chamber, applying a microwave power in the processing chamber while thermal treating the metal silicide layer; and maintaining a substrate temperature less than 400 degrees Celsius while thermal treating the metal silicide layer. In another embodiment, a method includes supplying a deposition gas mixture including at least a metal containing precursor and a reacting gas on a surface of a substrate, forming a plasma in the presence of the deposition gas mixture by exposure to microwave power, exposing the plasma to light radiation, and forming a metal silicide layer on the substrate from the deposition gas.

Abstract translation: 提供了用于形成用于半导体应用的后端互连结构的纳米线的金属硅化物的方法和装置。 在一个实施例中，该方法包括通过化学气相沉积工艺或物理气相沉积工艺在衬底上形成金属硅化物层，对处理室中的金属硅化物层进行热处理，在处理室中施加微波功率，同时热处理 金属硅化物层; 并且在热处理金属硅化物层的同时保持低于400摄氏度的衬底温度。 在另一个实施方案中，一种方法包括在衬底的表面上提供包含至少含金属的前体和反应气体的沉积气体混合物，通过暴露于微波功率在沉积气体混合物的存在下形成等离子体，使等离子体 以照射辐射，并从沉积气体在衬底上形成金属硅化物层。

公开(公告)号：US20160204029A1

公开(公告)日：2016-07-14

申请号：US14975028

申请日：2015-12-18

Applicant: Applied Materials, Inc.

Inventor： Bencherki MEBARKI ,  Annamalai LAKSHMANAN ,  Kaushal K. SINGH ,  Paul F. MA ,  Mehul B. NAIK ,  Andrew COCKBURN ,  Ludovic GODET

IPC: H01L21/768 ,  H01L21/285

Abstract: Methods and apparatus for forming a metal silicide as nanowires for back-end interconnection structures for semiconductor applications are provided. In one embodiment, the method includes forming a metal silicide stack comprising as plurality of metal silicide layers on a substrate by a chemical vapor deposition process or a physical vapor deposition process, thermal treating the metal silicide stack in a processing chamber, applying a microwave power in the processing chamber while thermal treating the metal silicide layer; and maintaining a substrate temperature less than 400 degrees Celsius while thermal treating the metal silicide layer.

Abstract translation: 提供了用于形成用于半导体应用的后端互连结构的纳米线的金属硅化物的方法和装置。 在一个实施例中，该方法包括通过化学气相沉积工艺或物理气相沉积工艺在衬底上形成包含多个金属硅化物层的金属硅化物堆叠，对处理室中的金属硅化物堆进行热处理，施加微波功率 在处理室中，同时热处理金属硅化物层; 并且在热处理金属硅化物层的同时保持低于400摄氏度的衬底温度。

公开(公告)号：US20190172686A1

公开(公告)日：2019-06-06

申请号：US16250763

申请日：2019-01-17

Applicant: Applied Materials, Inc.

Inventor： Bencherki MEBARKI ,  Annamalai LAKSHMANAN ,  Kaushal K. SINGH ,  Andrew COCKBURN ,  Ludovic GODET ,  Paul F. MA ,  Mehul B. NAIK

IPC: H01J37/32 ,  H01L21/768 ,  C23C16/42 ,  H01L21/3205 ,  C23C16/56 ,  H01L21/285 ,  H01L21/268

Abstract: Methods and apparatus for forming a metal silicide as nanowires for back-end interconnection structures for semiconductor applications are provided. In one embodiment, the method includes forming a metal silicide layer on a substrate by a chemical vapor deposition process or a physical vapor deposition process, thermal treating the metal silicide layer in a processing chamber, applying a microwave power in the processing chamber while thermal treating the metal silicide layer; and maintaining a substrate temperature less than 400 degrees Celsius while thermal treating the metal silicide layer. In another embodiment, a method includes supplying a deposition gas mixture including at least a metal containing precursor and a reacting gas on a surface of a substrate, forming a plasma in the presence of the deposition gas mixture by exposure to microwave power, exposing the plasma to light radiation, and forming a metal silicide layer on the substrate from the deposition gas.

公开(公告)号：US20160204027A1

公开(公告)日：2016-07-14

申请号：US14975231

申请日：2015-12-18

Applicant: Applied Materials, Inc.

Inventor： Annamalai LAKSHMANAN ,  Bencherki MEBARKI ,  Kaushal K. SINGH ,  Paul F. MA ,  Mehul B. NAIK ,  Andrew COCKBURN ,  Ludovic GODET

IPC: H01L21/768 ,  H01L21/285

CPC classification number: H01L21/76879 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/32053 ,  H01L21/76802 ,  H01L21/76876 ,  H01L21/76886 ,  H01L21/76889 ,  H01L23/53257 ,  H01L23/53271 ,  H01L2221/1094

Abstract: Methods for direct deposition of a metal silicide nanowire for back-end interconnection structures for semiconductor applications are provided. In one embodiment, the method includes positioning a substrate in a processing region of a process chamber, the substrate having a first surface comprising a non-dielectric material; and a dielectric layer formed on the first surface. An opening is formed in the dielectric layer, the opening exposing at least a portion of the first surface, the opening having sidewalls. A metal silicide seed is deposited in the opening using a PVD process, wherein the PVD process is performed with either no bias or a bias which creates deposition on the sidewall which is less than 1% of the deposition on the first surface. A metal silicide layer is then selectively deposited on the metal silicide seed using a metal-silicon organic precursor, creating the metal silicide nanowire.

Abstract translation: 提供了用于半导体应用的后端互连结构的金属硅化物纳米线的直接沉积的方法。 在一个实施例中，该方法包括将衬底定位在处理室的处理区域中，该衬底具有包含非电介质材料的第一表面; 以及形成在第一表面上的电介质层。 在电介质层中形成开口，该开口露出第一表面的至少一部分，该开口具有侧壁。 使用PVD工艺在开口中沉积金属硅化物种子，其中PVD工艺是在没有偏压或偏压的情况下进行的，其产生在侧壁上的沉积，其小于第一表面上的沉积的1％。 然后使用金属硅有机前体将金属硅化物层选择性地沉积在金属硅化物种子上，产生金属硅化物纳米线。