Invention Application
US20160204029A1 LAMINATE AND CORE SHELL FORMATION OF SILICIDE NANOWIRE 审中-公开
硅酸盐和核心层形成硅酸盐纳米管

LAMINATE AND CORE SHELL FORMATION OF SILICIDE NANOWIRE
Abstract:
Methods and apparatus for forming a metal silicide as nanowires for back-end interconnection structures for semiconductor applications are provided. In one embodiment, the method includes forming a metal silicide stack comprising as plurality of metal silicide layers on a substrate by a chemical vapor deposition process or a physical vapor deposition process, thermal treating the metal silicide stack in a processing chamber, applying a microwave power in the processing chamber while thermal treating the metal silicide layer; and maintaining a substrate temperature less than 400 degrees Celsius while thermal treating the metal silicide layer.
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