公开(公告)号：US12096657B2

公开(公告)日：2024-09-17

申请号：US17504230

申请日：2021-10-18

申请人： Apple Inc.

发明人： Jung Yen Huang ,  Shinya Ono ,  Chin-Wei Lin ,  Akira Matsudaira ,  Cheng Min Hu ,  Chih Pang Chang ,  Ching-Sang Chuang ,  Gihoon Choo ,  Jiun-Jye Chang ,  Po-Chun Yeh ,  Shih Chang Chang ,  Yu-Wen Liu ,  Zino Lee

IPC分类号： H01L27/32 ,  H01L29/66 ,  H01L29/786 ,  H10K59/121 ,  H10K59/12

CPC分类号： H10K59/1213 ,  H01L29/66742 ,  H01L29/7869 ,  H10K59/1216 ,  H10K59/1201

摘要： A display may include an array of pixels. Each pixel in the array includes an organic light-emitting diode coupled to associated semiconducting oxide transistors. The semiconducting oxide transistors may exhibit different device characteristics. Some of the semiconducting oxide transistors may be formed using a first oxide layer formed from a first semiconducting oxide material using first processing steps, whereas other semiconducting oxide transistors are formed using a second oxide layer formed from a second semiconducting oxide material using second processing steps different than the first processing steps. The display may include three or more different semiconducting oxide layers formed during different processing steps.

公开(公告)号：US09716134B2

公开(公告)日：2017-07-25

申请号：US15150285

申请日：2016-05-09

申请人： Apple Inc.

发明人： Chin-Wei Lin ,  Shih Chang Chang ,  Ching-Sang Chuang

IPC分类号： H01L27/32 ,  H01L23/552 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L27/3272 ,  H01L23/552 ,  H01L27/1218 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78633 ,  H01L29/78666 ,  H01L29/78675 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

摘要： A display may have an array of organic light-emitting diode display pixels. Each display pixel may have a light-emitting diode that emits light under control of a drive transistor. Each display pixel may also have control transistors for compensating and programming operations. The array of display pixels may have rows and columns. Row lines may be used to apply row control signals to rows of the display pixels. Column lines (data lines) may be used to apply display data and other signals to respective columns of display pixels. A bottom conductive shielding structure may be formed below each drive transistor. The bottom conductive shielding structure may serve to shield the drive transistor from any electric field generated from the adjacent row and column lines. The bottom conductive shielding structure may be electrically floating or coupled to a power supply line.

公开(公告)号：US11762490B1

公开(公告)日：2023-09-19

申请号：US17407702

申请日：2021-08-20

申请人： Apple Inc.

发明人： Kyounghwan Kim ,  Abbas Jamshidi Roudbari ,  Chia-Hsiang Chen ,  Chien-Ya Lee ,  Ching-Sang Chuang ,  Jae Won Choi ,  Jonathan H. Beck ,  Ming E. Tai ,  Warren S. Rieutort-Louis ,  Wen-I Hsieh ,  Yuchi Che

IPC分类号： G06F3/044 ,  G06F3/041 ,  H10K59/40 ,  H10K59/50

CPC分类号： G06F3/0412 ,  H10K59/40 ,  H10K59/50 ,  G06F3/044

摘要： An electronic device may have a display with an active area configured to display images and an inactive area that is free of pixels and that does not display images. Touch sensor sense lines may have portions located in the active area and portions located in the inactive area. The active and inactive areas may be characterized by respective reflectivity values. To match the reflectivities of the active and inactive areas and thereby avoid undesired visually distinguishable differences in the appearances of these areas, the touch sensor circuitry in the inactive areas may be configured to match the reflectivity values of the active and inactive areas. Sense line portions in the inactive area may have metal traces of enhanced reflectivity and/or uneven surface topology to enhance ambient light reflections through a circular polarizer that overlaps the active and inactive areas.

公开(公告)号：US20210050385A1

公开(公告)日：2021-02-18

申请号：US16945643

申请日：2020-07-31

申请人： Apple Inc.

发明人： Ching-Sang Chuang ,  Jiun-Jye Chang ,  Po-Chun Yeh ,  Shih Chang Chang ,  Ting-Kuo Chang ,  Yun Wang

IPC分类号： H01L27/30 ,  H01L27/28 ,  H01L27/32 ,  H01L27/146 ,  H01L29/786 ,  H01L51/52 ,  H01L51/00 ,  G02F1/1333 ,  G02F1/1368 ,  G02F1/1343

摘要： An electronic device includes a stack, and the stack includes a substrate, and a multi-layer structure deposited on the substrate and including a set of TFTs. The electronic device further includes a photodetector attached to the multi-layer structure and including an organic photosensitive material. The organic photosensitive material is electrically connected to a TFT in the set of TFTs. Another electronic device includes a stack, and the stack includes a substrate, and a multi-layer structure deposited on the substrate. The multi-layer structure includes a first set of layers including a set of TFTs, and a second set of layers including a PIN diode. The PIN diode is configured to operate as a photodetector and receive at least one wavelength of electromagnetic radiation, and is electrically connected to a TFT in the set of TFTs.

公开(公告)号：US20170294499A1

公开(公告)日：2017-10-12

申请号：US15268106

申请日：2016-09-16

申请人： Apple Inc.

发明人： Chang Ming Lu ,  Chia-Yu Chen ,  Chih Pang Chang ,  Ching-Sang Chuang ,  Hung-Che Ting ,  Jung Yen Huang ,  Sheng Hui Shen ,  Shih Chang Chang ,  Tsung-Hsiang Shih ,  Yu-Wen Liu ,  Yu Hung Chen ,  Kai-Chieh Wu ,  Lun Tsai ,  Takahide Ishii ,  Chung-Wang Lee ,  Hsing-Chuan Wang ,  Chin Wei Hsu ,  Fu-Yu Teng

IPC分类号： H01L27/32 ,  H01L51/56 ,  H01L23/532 ,  H01L21/027 ,  H01L21/768 ,  H01L21/02

CPC分类号： H01L21/76834 ,  H01L21/02244 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/0273 ,  H01L21/7685 ,  H01L21/76877 ,  H01L21/77

摘要： A component such as a display may have a substrate and thin-film circuitry on the substrate. The thin-film circuitry may be used to form an array of pixels for a display or other circuit structures. Metal traces may be formed among dielectric layers in the thin-film circuitry. Metal traces may be provided with insulating protective sidewall structures. The protective sidewall structures may be formed by treating exposed edge surfaces of the metal traces. A metal trace may have multiple layers such as a core metal layer sandwiched between barrier metal layers. The core metal layer may be formed from a metal that is subject to corrosion. The protective sidewall structures may help prevent corrosion in the core metal layer. Surface treatments such as oxidation, nitridation, and other processes may be used in forming the protective sidewall structures.

公开(公告)号：US11121263B2

公开(公告)日：2021-09-14

申请号：US16746527

申请日：2020-01-17

申请人： Apple Inc.

发明人： Jehun Lee ,  Ching-Sang Chuang ,  Hirokazu Yamagata ,  Jiun-Jye Chang ,  Kenny Kim ,  Po-Chun Yeh ,  Shih Chang Chang ,  Ting-Kuo Chang

IPC分类号： H01L29/786 ,  H01L27/12

摘要： Display panels with hydrogen trap layers are described. The hydrogen trap layers may be incorporated into a variety of locations to getter or block hydrogen diffusion into the semiconductor oxide layer of an oxide transistor.

公开(公告)号：US20180061867A1

公开(公告)日：2018-03-01

申请号：US15344045

申请日：2016-11-04

申请人： Apple Inc.

发明人： Chih Pang Chang ,  Jung-Fang Chang ,  ChinWei Hu ,  Te-Hua Teng ,  Jung Yen Huang ,  Wen-I Hsieh ,  Jiun-Jye Chang ,  Ching-Sang Chuang ,  Hung-Che Ting ,  Lungpao Hsin

IPC分类号： H01L27/12

CPC分类号： H01L27/1251 ,  H01L27/1225

摘要： Hybrid silicon TFT and oxide TFT structures and methods of formation are described. In an embodiment, a protection layer is formed over a semiconductor oxide channel layer of the oxide TFT to protect the semiconductor oxide channel layer during a cleaning operation of the silicon TFT.

公开(公告)号：US11910654B1

公开(公告)日：2024-02-20

申请号：US17395381

申请日：2021-08-05

申请人： Apple Inc.

发明人： Po-Chun Yeh ,  Jiun-Jye Chang ,  Doh-Hyoung Lee ,  Caleb Coburn ,  Niva A. Ran ,  Ching-Sang Chuang ,  Themistoklis Afentakis ,  Chuan-Jung Lin ,  Jung Yen Huang ,  Lei Yuan

IPC分类号： H10K59/122 ,  G09G3/3291 ,  H10K59/35 ,  H10K71/00

CPC分类号： H10K59/122 ,  G09G3/3291 ,  H10K59/35 ,  H10K71/00 ,  H10K71/621 ,  G09G2320/0214

摘要： An organic light-emitting diode (OLED) display may have an array of organic light-emitting diode pixels that each have OLED layers interposed between a cathode and an anode. Voltage may be applied to the anode of each pixel to control the magnitude of emitted light. The conductivity of the OLED layers may allow leakage current to pass between neighboring anodes in the display. To reduce leakage current and the accompanying cross-talk, the display may include active and/or passive leakage-mitigating structures. The passive leakage-mitigating structures may have an undercut that causes discontinuities in the overlying OLED layers. Active leakage-mitigating structures may include a conductive layer (e.g., a conductive ring) that drains leakage current to ground. Alternatively, the active leakage-mitigating structures may include a gate electrode modulator with a variable voltage that stops the current flow laterally.

公开(公告)号：USRE49166E1

公开(公告)日：2022-08-09

申请号：US16845526

申请日：2020-04-10

申请人： Apple Inc.

发明人： Shinya Ono ,  Chin-Wei Lin ,  Ching-Sang Chuang ,  Jiun-Jye Chang ,  Keisuke Omoto ,  Shang-Chih Lin ,  Ting-Kuo Chang ,  Takahide Ishii

IPC分类号： H01L27/12 ,  H01L27/32 ,  H01L29/786

摘要： An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels, that include hybrid thin-film transistor structures formed using semiconducting-oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. A drive transistor in the display pixel may be a top-gate semiconducting-oxide thin-film transistor and a switching transistor in the display pixel may be a top-gate silicon thin-film transistor. A storage capacitor in the display may include a conductive semiconducting-oxide electrode.

公开(公告)号：US20210066505A1

公开(公告)日：2021-03-04

申请号：US16746527

申请日：2020-01-17

申请人： Apple Inc.

发明人： Jehun Lee ,  Ching-Sang Chuang ,  Hirokazu Yamagata ,  Jiun-Jye Chang ,  Kenny Kim ,  Po-Chun Yeh ,  Shih Chang Chang ,  Ting-Kuo Chang

IPC分类号： H01L29/786 ,  H01L27/12

摘要： Display panels with hydrogen trap layers are described. The hydrogen trap layers may be incorporated into a variety of locations to getter or block hydrogen diffusion into the semiconductor oxide layer of an oxide transistor.