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1.发明授权公开(公告)号：US10833021B2
公开(公告)日：2020-11-10
申请号：US16009144
申请日：2018-06-14
发明人： Lei Zhang , Hongyong Xue , Jian Wang , Runtao Ning
IPC分类号： H01L23/544 , H01L21/67 , H01L21/683 , H01L21/304 , H01L21/265 , H01L21/78 , H01L29/66
摘要： A method comprises the steps of providing a semiconductor device wafer; forming a first plurality of alignment marks on a first side of the semiconductor device wafer; forming a first pattern of a first conductivity type; forming a second plurality of alignment marks on a second side of the semiconductor device wafer; forming a bonded wafer by bonding a carrier wafer to the semiconductor device wafer; forming a third plurality of alignment marks on a free side of the carrier wafer; applying a grinding process; forming a plurality of device structure members; removing the carrier wafer; applying an implanting process and an annealing process; applying a metallization process and applying a singulation process.
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2.发明申请公开(公告)号：US20190148165A1
公开(公告)日：2019-05-16
申请号：US15811417
申请日：2017-11-13
发明人： Wei He , Chris Wiebe , Hongyong Xue
IPC分类号： H01L21/3213 , H01L21/768 , H01L23/532 , H01L23/00
CPC分类号： H01L21/32134 , H01L21/76838 , H01L21/76849 , H01L23/53214 , H01L23/53223 , H01L23/562
摘要： A semiconductor device comprising a substrate layer, an epitaxial layer, a dielectric layer, a first aluminum layer, a first titanium interlayer and a second aluminum layer. The first titanium interlayer is disposed between the first aluminum layer and the second aluminum layer. A process for fabricating a semiconductor device comprising the steps of: preparing a semiconductor wafer; depositing a first aluminum layer onto the semiconductor wafer; depositing a first titanium interlayer onto the first aluminum layer; depositing a second aluminum layer onto the first titanium interlayer; applying an etching process so that a plurality of trenches are formed so as to expose a plurality of top surfaces of a dielectric layer; and applying a singulation process so as to form a plurality of separated semiconductor devices.
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3.发明申请公开(公告)号：US20190006285A1
公开(公告)日：2019-01-03
申请号：US16009144
申请日：2018-06-14
发明人： Lei Zhang , Hongyong Xue , Jian Wang , Runtao Ning
IPC分类号： H01L23/544 , H01L21/67
摘要： A method comprises the steps of providing a semiconductor device wafer; forming a first plurality of alignment marks on a first side of the semiconductor device wafer; forming a first pattern of a first conductivity type; forming a second plurality of alignment marks on a second side of the semiconductor device wafer; forming a bonded wafer by bonding a carrier wafer to the semiconductor device wafer; forming a third plurality of alignment marks on a free side of the carrier wafer; applying a grinding process; forming a plurality of device structure members; removing the carrier wafer; applying an implanting process and an annealing process; applying a metallization process and applying a singulation process.
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公开(公告)号：US11749716B2
公开(公告)日：2023-09-05
申请号：US17306968
申请日：2021-05-04
发明人： Lei Zhang , Karthik Padmanabhan , Lingpeng Guan , Jian Wang , Lingbing Chen , Wim Aarts , Hongyong Xue , Wenjun Li , Madhur Bobde
IPC分类号： H01L29/06 , H01L29/861 , H01L29/739 , H01L27/07 , H01L29/36 , H01L29/66 , H01L27/06 , H01L21/265 , H01L21/266 , H01L21/324 , H01L21/02 , H01L21/304
CPC分类号： H01L29/0638 , H01L27/0716 , H01L29/36 , H01L29/66333 , H01L29/66348 , H01L29/7395 , H01L29/7397 , H01L29/861 , H01L21/02236 , H01L21/266 , H01L21/26513 , H01L21/304 , H01L21/324 , H01L27/0664
摘要： A semiconductor device includes a semiconductor body having a base region incorporating a field stop zone where the base region and the field stop zone are both formed using an epitaxial process. Furthermore, the epitaxial layer field stop zone is formed with an enhanced doping profile to realize improved soft-switching performance for the semiconductor device. In some embodiments, the enhanced doping profile includes multiple doped regions with peak doping levels where a first doped region adjacent to a first side of the field stop zone has a first peak doping level that is not higher than a last peak doping level of a last doped region adjacent to the base region. The epitaxial layer field stop zone of the present invention enables complex field stop zone doping profiles to be used to obtain the desired soft-switching characteristics in the semiconductor device.
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公开(公告)号：US10686038B2
公开(公告)日：2020-06-16
申请号：US16179629
申请日：2018-11-02
发明人： Hongyong Xue , Lei Zhang , Brian Schorr , Chris Wiebe , Wenjun Li
IPC分类号： H01L29/10 , H01L29/739 , H01L29/66 , H01L29/08 , H01L29/861 , H01L29/36
摘要： An RC-IGBT includes a semiconductor body incorporating a field stop zone where the base region and the field stop zone are both formed using an epitaxial process and the field stop zone has an enhanced doping profile to realize improved soft-switching performance for the semiconductor device. In alternate embodiments, RC-IGBT device, including the epitaxial layer field stop zone, are realized through a fabrication process that uses front side processing only to form the backside contact regions and the front side device region. The fabrication method forms an RC-IGBT device using front side processing to form the backside contact regions and then using wafer bonding process to flip the semiconductor structure onto a carrier wafer so that front side processing is used again to form the device region.
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公开(公告)号：US20210273046A1
公开(公告)日：2021-09-02
申请号：US17306968
申请日：2021-05-04
发明人： Lei Zhang , Karthik Padmanabhan , Lingpeng Guan , Jian Wang , Lingbing Chen , Wim Aarts , Hongyong Xue , Wenjun Li , Madhur Bobde
IPC分类号： H01L29/06 , H01L29/861 , H01L29/739 , H01L27/07 , H01L29/36 , H01L29/66
摘要： A semiconductor device includes a semiconductor body having a base region incorporating a field stop zone where the base region and the field stop zone are both formed using an epitaxial process. Furthermore, the epitaxial layer field stop zone is formed with an enhanced doping profile to realize improved soft-switching performance for the semiconductor device. In some embodiments, the enhanced doping profile includes multiple doped regions with peak doping levels where a first doped region adjacent to a first side of the field stop zone has a first peak doping level that is not higher than a last peak doping level of a last doped region adjacent to the base region. The epitaxial layer field stop zone of the present invention enables complex field stop zone doping profiles to be used to obtain the desired soft-switching characteristics in the semiconductor device.
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公开(公告)号：US11031465B2
公开(公告)日：2021-06-08
申请号：US16419277
申请日：2019-05-22
发明人： Lei Zhang , Karthik Padmanabhan , Lingpeng Guan , Jian Wang , Lingbing Chen , Wim Aarts , Hongyong Xue , Wenjun Li , Madhur Bobde
IPC分类号： H01L29/06 , H01L29/739 , H01L27/07 , H01L29/36 , H01L29/66 , H01L29/861 , H01L27/06 , H01L21/265 , H01L21/266 , H01L21/324 , H01L21/02 , H01L21/304
摘要： A semiconductor device includes a semiconductor body having a base region incorporating a field stop zone where the base region and the field stop zone are both formed using an epitaxial process. Furthermore, the epitaxial layer field stop zone is formed with an enhanced doping profile to realize improved soft-switching performance for the semiconductor device. In some embodiments, the enhanced doping profile formed in the field stop zone includes varying, non-constant doping levels. In some embodiments, the enhanced doping profile includes one of an extended graded doping profile, a multiple stepped flat doping profile, or a multiple spike doping profile. The epitaxial layer field stop zone of the present invention enables complex field stop zone doping profiles to be used to obtain the desired soft-switching characteristics in the semiconductor device.
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公开(公告)号：US20190273131A1
公开(公告)日：2019-09-05
申请号：US16419277
申请日：2019-05-22
发明人： Lei Zhang , Karthik Padmanabhan , Lingpeng Guan , Jian Wang , Lingbing Chen , Wim Aarts , Hongyong Xue , Wenjun Li , Madhur Bobde
IPC分类号： H01L29/06 , H01L27/07 , H01L29/861 , H01L29/36
摘要： A semiconductor device includes a semiconductor body having a base region incorporating a field stop zone where the base region and the field stop zone are both formed using an epitaxial process. Furthermore, the epitaxial layer field stop zone is formed with an enhanced doping profile to realize improved soft-switching performance for the semiconductor device. In some embodiments, the enhanced doping profile formed in the field stop zone includes varying, non-constant doping levels. In some embodiments, the enhanced doping profile includes one of an extended graded doping profile, a multiple stepped flat doping profile, or a multiple spike doping profile. The epitaxial layer field stop zone of the present invention enables complex field stop zone doping profiles to be used to obtain the desired soft-switching characteristics in the semiconductor device.
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公开(公告)号：US20190006461A1
公开(公告)日：2019-01-03
申请号：US15637352
申请日：2017-06-29
发明人： Lei Zhang , Karthik Padmanabhan , Lingpeng Guan , Jian Wang , Lingbing Chen , Wim Aarts , Hongyong Xue , Wenjun Li , Madhur Bobde
IPC分类号： H01L29/06
摘要： A semiconductor device includes a semiconductor body having a base region incorporating a field stop zone where the base region and the field stop zone are both formed using an epitaxial process. Furthermore, the epitaxial layer field stop zone is formed with an enhanced doping profile to realize improved soft-switching performance for the semiconductor device. In some embodiments, the enhanced doping profile formed in the field stop zone includes varying, non-constant doping levels. In some embodiments, the enhanced doping profile includes one of an extended graded doping profile, a multiple stepped flat doping profile, or a multiple spike doping profile. The epitaxial layer field stop zone of the present invention enables complex field stop zone doping profiles to be used to obtain the desired soft-switching characteristics in the semiconductor device.
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10.发明授权公开(公告)号：US10763125B2
公开(公告)日：2020-09-01
申请号：US16555840
申请日：2019-08-29
发明人： Wei He , Chris Wiebe , Hongyong Xue
IPC分类号： H01L21/3213 , H01L21/768 , H01L23/532 , H01L23/00
摘要： A semiconductor device comprising a substrate layer, an epitaxial layer, a dielectric layer, a first aluminum layer, a first titanium interlayer and a second aluminum layer. The first titanium interlayer is disposed between the first aluminum layer and the second aluminum layer. A process for fabricating a semiconductor device comprising the steps of: preparing a semiconductor wafer; depositing a first aluminum layer onto the semiconductor wafer; depositing a first titanium interlayer onto the first aluminum layer; depositing a second aluminum layer onto the first titanium interlayer; applying an etching process so that a plurality of trenches are formed so as to expose a plurality of top surfaces of a dielectric layer; and applying a singulation process so as to form a plurality of separated semiconductor devices.
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