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    Methods involving resetting spin-torque magnetic random access memory with domain wall
    4.
    发明授权
    Methods involving resetting spin-torque magnetic random access memory with domain wall 有权
    涉及到用域壁复位自旋转矩磁随机存取存储器的方法

    公开(公告)号：US07525862B1

    公开(公告)日：2009-04-28

    申请号：US12118499

    申请日：2008-05-09

    Applicant: Jonathan Z. Sun ,  Rudolf M. Tromp

    Inventor： Jonathan Z. Sun ,  Rudolf M. Tromp

    IPC: G11C11/14 ,  G11C11/15 ,  G11C11/16

    CPC classification number: G11C11/14 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

    Abstract: A method for resetting a spin-transfer based random access memory system, the method comprising, inducing a first current through a first conductor, wherein the first current is operative to propagate a magnetic domain wall in a ferromagnetic film layer and the propagation of the magnetic domain wall is further operative to change the direction of a magnetic state of a first free layer magnet, and inducing a second current only through a second conductor, wherein the second current is operative to further propagate the magnetic domain wall in the ferromagnetic film layer and the propagation of the magnetic domain wall is further operative to change the direction of a magnetic state of a second free layer magnet.

    Abstract translation: 一种用于复位基于自旋转移的随机存取存储器系统的方法，所述方法包括：引导通过第一导体的第一电流，其中所述第一电流可操作地传播铁磁膜层中的磁畴壁，并且所述磁性 畴壁进一步操作以改变第一自由层磁体的磁状态的方向，并且仅通过第二导体诱导第二电流，其中第二电流可操作以进一步传播铁磁膜层中的磁畴壁，以及 磁畴壁的传播进一步可操作地改变第二自由层磁体的磁状态的方向。

    Method and apparatus for surface potential reflection electron mask lithography
    5.
    发明授权
    Method and apparatus for surface potential reflection electron mask lithography 有权
    用于表面电位反射电子掩模光刻的方法和装置

    公开(公告)号：US07432514B2

    公开(公告)日：2008-10-07

    申请号：US10105258

    申请日：2002-03-26

    Applicant: Rudolf M. Tromp

    Inventor： Rudolf M. Tromp

    IPC: G21K5/10

    CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G21K1/093 ,  H01J37/3174 ,  H01J2237/31789

    Abstract: A method (and structure) for controlling a beam used to generate a pattern on a target surface includes generating a beam of charged particles and directing the beam to a mask surface and causing the beam to be either absorbed by or reflected from the mask surface, thereby either precluding or allowing the beam to strike the target surface, based on a reflection characteristic of the mask surface.

    Abstract translation: 用于控制用于在目标表面上产生图案的光束的方法（和结构）包括产生带电粒子束并将光束引导到掩模表面并使光束被掩模表面吸收或从掩模表面反射， 从而基于掩模表面的反射特性来阻止或允许光束撞击目标表面。

    Aberration-correcting cathode lens microscopy instrument
    6.
    发明授权
    Aberration-correcting cathode lens microscopy instrument 有权
    畸变校正阴极透镜显微镜仪器

    公开(公告)号：US07348566B2

    公开(公告)日：2008-03-25

    申请号：US11364299

    申请日：2006-02-28

    Applicant: Rudolf M. Tromp

    Inventor： Rudolf M. Tromp

    IPC: G01J1/42

    CPC classification number: H01J37/153 ,  H01J37/05 ,  H01J37/252 ,  H01J37/295 ,  H01J2237/055 ,  H01J2237/1534 ,  H01J2237/2538 ,  H01J2237/2544

    Abstract: An aberration-correcting microscopy instrument is provided. The instrument has a first magnetic deflector disposed for reception of a first non-dispersed electron diffraction pattern. The first magnetic deflector is also configured for projection of a first energy dispersed electron diffraction pattern in an exit plane of the first magnetic deflector. The instrument also has an electrostatic lens disposed in the exit plane of a first magnetic deflector, as well as a second magnetic deflector substantially identical to the first magnetic deflector. The second magnetic deflector is disposed for reception of the first energy dispersed electron diffraction pattern from the electrostatic lens. The second magnetic deflector is also configured for projection of a second non-dispersed electron diffraction pattern in a first exit plane of the second magnetic deflector. The instrument also has an electron mirror configured for correction of one or more aberrations in the second non-dispersed electron diffraction pattern. The electron mirror is disposed for reflection of the second non-dispersed electron diffraction pattern to the second magnetic deflector for projection of a second energy dispersed electron diffraction pattern in a second exit plane of the second magnetic deflector.

    Abstract translation: 提供了一种像差校正显微镜仪器。 仪器具有设置用于接收第一非分散电子衍射图案的第一磁偏转器。 第一磁偏转器还被配置用于在第一磁偏转器的出射平面中投射第一能量分散电子衍射图案。 仪器还具有设置在第一磁偏转器的出射平面中的静电透镜以及与第一磁偏转器基本相同的第二磁偏转器。 第二磁偏转器被设置用于从静电透镜接收第一能量分散电子衍射图案。 第二磁偏转器还被配置用于在第二磁偏转器的第一出射平面中投射第二非分散电子衍射图案。 仪器还具有配置用于校正第二非分散电子衍射图案中的一个或多个像差的电子反射镜。 电子反射镜被设置用于将第二非分散电子衍射图案反射到第二磁偏转器，用于在第二磁偏转器的第二出射平面中投射第二能量分散电子衍射图案。

    Surfactant-enhanced epitaxy
    7.
    发明授权
    Surfactant-enhanced epitaxy 失效
    表面活性剂增强外延

    公开(公告)号：US5628834A

    公开(公告)日：1997-05-13

    申请号：US438004

    申请日：1995-05-09

    Applicant: Matthew W. Copel ,  Rudolf M. Tromp

    Inventor： Matthew W. Copel ,  Rudolf M. Tromp

    IPC: C30B23/02 ,  C30B25/02 ,  C30B25/18 ,  H01L21/203 ,  H01L29/165

    CPC classification number: C30B23/02 ,  C30B25/02 ,  C30B25/18 ,  C30B29/06 ,  C30B29/08 ,  C30B29/52 ,  Y10S148/072 ,  Y10S148/097

    Abstract: The present invention broadly concerns layered structures of substantially-crystalline materials and processes for making such structures. More particularly, the invention concerns epitaxial growth of a substantially-crystalline layer of a first material on a substantially-crystalline second material different from the first material utilizing an approximately one monolayer thick monovalent surfactant element.

    Abstract translation: 本发明广泛涉及基本结晶材料的层状结构和制造这种结构的方法。 更具体地，本发明涉及使用大约一个单层厚度的一价表面活性剂元件，在不同于第一材料的基本上为结晶的第二材料上的第一材料的基本晶体层的外延生长。

    Method and apparatus for surface potential reflection electron mask lithography
    8.
    发明授权
    Method and apparatus for surface potential reflection electron mask lithography 失效
    用于表面电位反射电子掩模光刻的方法和装置

    公开(公告)号：US07592612B2

    公开(公告)日：2009-09-22

    申请号：US12027614

    申请日：2008-02-07

    Applicant: Rudolf M. Tromp

    Inventor： Rudolf M. Tromp

    IPC: G21K5/10 ,  G03F9/00

    CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G21K1/093 ,  H01J37/3174 ,  H01J2237/31789

    Abstract: A method (and structure) for controlling a beam used to generate a pattern on a target surface includes generating a beam of charged particles and directing the beam to a mask surface and causing the beam to be either absorbed by or reflected from the mask surface, thereby either precluding or allowing the beam to strike the target surface, based on a reflection characteristic of the mask surface.

    Abstract translation: 用于控制用于在目标表面上产生图案的光束的方法（和结构）包括产生带电粒子束并将光束引导到掩模表面并使光束被掩模表面吸收或从掩模表面反射， 从而基于掩模表面的反射特性来阻止或允许光束撞击目标表面。

    Energy-filtering cathode lens microscopy instrument
    9.
    发明授权
    Energy-filtering cathode lens microscopy instrument 失效
    能量过滤阴极透镜显微镜仪器

    公开(公告)号：US07453062B2

    公开(公告)日：2008-11-18

    申请号：US11364298

    申请日：2006-02-28

    Applicant: Rudolf M. Tromp

    Inventor： Rudolf M. Tromp

    IPC: H01J37/05

    CPC classification number: H01J37/05 ,  H01J37/252 ,  H01J2237/0458 ,  H01J2237/057 ,  H01J2237/2538 ,  H01J2237/2544

    Abstract: An energy filtering microscopy instrument is provided. An objective lens is disposed for reception of electrons in order to form an electron diffraction pattern in a backfocal plane of the objective lens. An entrance aperture disposed in the backfocal plane of the objective lens for filtering a slice of the electron diffraction pattern. A magnetic deflector has an entrance plane and an exit plane. The entrance aperture is disposed in the entrance plane. The magnetic deflector is disposed to receive the slice of the electron diffraction pattern and project an energy dispersed electron diffraction pattern to the exit plane. An exit aperture is disposed in the exit plane of the magnetic deflector for selection of desired electron energy of the energy dispersed electron diffraction pattern.

    Abstract translation: 提供能量过滤显微镜仪器。 为了在物镜的背面平面中形成电子衍射图案，设置物镜接收电子。 设置在物镜的背面平面中的入口孔，用于过滤电子衍射图案的切片。 导磁板具有入射面和出射面。 入口孔设置在入口平面中。 磁偏转器被设置为接收电子衍射图案的切片并将能量分散的电子衍射图案投射到出射平面。 出口孔布置在磁偏转器的出射平面中，用于选择能量分散的电子衍射图案的期望的电子能量。

    Fabrication of atomic step-free surfaces
    10.
    发明授权
    Fabrication of atomic step-free surfaces 失效
    原子无梯度表面的制造

    公开(公告)号：US5910339A

    公开(公告)日：1999-06-08

    申请号：US697315

    申请日：1996-08-22

    Applicant: Jack M. Blakely ,  So Tanaka ,  Christopher C. Umbach ,  Rudolf M. Tromp

    Inventor： Jack M. Blakely ,  So Tanaka ,  Christopher C. Umbach ,  Rudolf M. Tromp

    IPC: H01L21/302 ,  H01L21/306 ,  H01L21/324 ,  B05D3/02

    CPC classification number: H01L21/324 ,  H01L21/306

    Abstract: Fabrication of atomic step-free regions on a substrate surface is achieved by first forming a two-dimensional pattern on the substrate. The pattern is preferably a grating comprising an array of troughs or mesas which are separated from one another by a plurality of ridges or trenches. Any atomic steps on the flat top surfaces of the troughs or mesas are moved into barrier regions formed by the ridge or trench sidewalls during a high temperature annealing or deposition step, thereby leaving the flat surfaces of the troughs and mesas free of atomic steps. Structures having step-free regions large enough to accommodate micron sized devices having nanometer sized features are thereby formed.

    Abstract translation: 通过首先在衬底上形成二维图案来实现衬底表面上的原子无梯度区域的制造。 该图案优选地是包括通过多个脊或沟槽彼此分离的槽或台面阵列的光栅。 在高温退火或沉积步骤期间，槽或台面的平坦顶表面上的任何原子台阶移动到由脊或沟槽侧壁形成的阻挡区域中，从而使槽和台面的平坦表面没有原子台阶。 从而形成具有足够大的无梯度区域以适应具有纳米尺寸特征的微米尺寸装置的结构。

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