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公开(公告)号：US20230336139A1
公开(公告)日：2023-10-19
申请号：US18340764
申请日：2023-06-23
Applicant: Akoustis, Inc.
Inventor： Dae Ho KIM , Mary WINTERS , Ramakrishna VETURY , Jeffrey B. SHEALY
CPC classification number: H03H9/02015 , H03H3/02 , H03H9/173 , H03H9/02047 , H03H2003/025
Abstract: An RF filter system includes a plurality of bulk acoustic wave resonators arranged in a circuit having serial and parallel shunt configurations of resonators. Each resonator having a reflector, a support member including a surface, a first electrode including tungsten, overlying the reflector, a piezoelectric film including crystalline aluminum scandium nitride overlapping the first electrode, a second electrode including tungsten overlapping the piezoelectric film and the first electrode, and a passivation layer including silicon nitride overlying the second electrode. Portions of the support member surface of at least one resonator define a cavity region having a portion of the first electrode of the at least one resonator is located within the cavity region. The pass band circuit response has a bandwidth corresponding to a thickness of at least one of the first electrode, piezoelectric film, second electrode, and passivation layer. The system can include single crystal or polycrystalline BAW resonators.
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公开(公告)号：US20230327649A1
公开(公告)日：2023-10-12
申请号：US18334303
申请日：2023-06-13
Applicant: Akoustis, Inc.
Inventor： Ya SHEN , Rohan W. HOULDEN , David M. AICHELE , Jeffrey B. SHEALY
CPC classification number: H03H9/605 , H03H2003/021 , H03H9/0095 , H03H9/0523 , H03H9/0533 , H03H9/105 , H03H9/173 , H03H9/175 , H03H9/176 , H03H9/542 , H03H9/562 , H03H9/566 , H03H9/568 , H03H3/02 , H03H9/0014 , H03H2003/025 , H03H9/564
Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.
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公开(公告)号：US20230123976A1
公开(公告)日：2023-04-20
申请号：US18066160
申请日：2022-12-14
Applicant: Akoustis, Inc.
Inventor： Shawn R. GIBB , Steven DENBAARS , Jeffrey B. SHEALY
IPC: H10N30/079 , H10N30/00 , H10N30/85 , H10N30/076 , C30B25/18 , C30B23/02 , C30B31/06 , C30B29/40
Abstract: A method of manufacture and resulting structure for a single crystal electronic device with an enhanced strain interface region. The method of manufacture can include forming a nucleation layer overlying a substrate and forming a first and second single crystal layer overlying the nucleation layer. These first and second layers can be doped by introducing one or more impurity species to form the strained single crystal layers. The first and second strained layers can be aligned along the same crystallographic direction to form a strained single crystal bi-layer having an enhanced strain interface region. Using this enhanced single crystal bi-layer to form active or passive devices results in improved physical characteristics, such as enhanced photon velocity or improved density charges.
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公开(公告)号：US20220345110A1
公开(公告)日：2022-10-27
申请号：US17860866
申请日：2022-07-08
Applicant: Akoustis, Inc.
Inventor： Ya SHEN , Rohan W. HOULDEN , David M. AICHELE , Jeffrey B. SHEALY
Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.
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5.发明申请公开(公告)号：US20210184642A1
公开(公告)日：2021-06-17
申请号：US17189182
申请日：2021-03-01
Applicant: Akoustis, Inc.
Inventor： Dae Ho KIM , Mary WINTERS , Ramakrishna VETURY , Jeffrey B. SHEALY
IPC: H03H3/02 , H03H9/02 , H03H9/13 , H03H9/17 , H03H9/10 , H03H9/05 , H01L41/337 , H01L41/317 , H01L41/29 , H01L41/23 , H01L41/18 , H01L41/08 , H01L41/053 , H01L41/047 , H03H9/54
Abstract: A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. A first patterned electrode is deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the first electrode and a planarized support layer is deposited over the sacrificial layer, which is then bonded to a substrate wafer. The crystalline substrate is removed and a second patterned electrode is deposited over a second surface of the film. The sacrificial layer is etched to release the air reflection cavity. Also, a cavity can instead be etched into the support layer prior to bonding with the substrate wafer. Alternatively, a reflector structure can be deposited on the first electrode, replacing the cavity.
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Patent Agency Ranking
公开(公告)号：US20200274607A1
公开(公告)日：2020-08-27
申请号：US15931413
申请日：2020-05-13
Applicant: Akoustis, Inc.
Inventor： Jeffrey B. SHEALY , Rohan W. HOULDEN , Shawn R. GIBB , David M. AICHELE
Abstract: A front end module (FEM) for a 5.2 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 5.2 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 5.2 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 5.2 GHz PA, a 5.2 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device.
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公开(公告)号：US20190044493A1
公开(公告)日：2019-02-07
申请号：US16054929
申请日：2018-08-03
Applicant: Akoustis, Inc.
Inventor： Dae Ho KIM , Pinal PATEL , Rohan W. HOULDEN , James Blanton SHEALY , Jeffrey B. SHEALY
Abstract: An elliptical-shaped resonator device. The device includes a bottom metal plate, a piezoelectric layer overlying the bottom metal plate, and a top metal plate overlying the piezoelectric layer. The top metal plate, the piezoelectric layer, and the bottom metal plate are characterized by an elliptical shape having a horizontal diameter (dx) and a vertical diameter (dy), which can be represented as ellipse ratio R=dx/dy. Using the elliptical structure, the resulting bulk acoustic wave resonator (BAWR) can exhibit equivalent or improved insertion loss, higher coupling coefficient, and higher quality factor compared to conventional polygon-shaped resonators.
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公开(公告)号：US20190036504A1
公开(公告)日：2019-01-31
申请号：US16134941
申请日：2018-09-18
Applicant: Akoustis, Inc.
Inventor： Ramakrishna VETURY , Alexander Y. FELDMAN , Michael D. HODGE , Art GEISS , Shawn R. GIBB , Mark D. BOOMGARDEN , Michael P. LEWIS , Pinal PATEL , Jeffrey B. SHEALY
Abstract: A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.
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9.发明申请公开(公告)号：US20170302428A1
公开(公告)日：2017-10-19
申请号：US15642242
申请日：2017-07-05
Applicant: Akoustis, Inc.
Inventor： Jeffrey B. SHEALY
Abstract: A mobile communication system. The system has a housing comprising an interior region and an exterior region and a processing device provided within an interior region of the housing. The system has an rf transmit module coupled to the processing device, and configured on a transmit path. The system has a transmit filter provided within the rf transmit module. In an example, the transmit filter comprises a diplexer filter comprising a single crystal acoustic resonator device.
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10.发明申请INTEGRATED CIRCUIT CONFIGURED WITH TWO OR MORE SINGLE CRYSTAL ACOUSTIC RESONATOR DEVICES 有权配有两个或更多单晶声音谐振器装置的集成电路公开(公告)号：US20150357987A1
公开(公告)日：2015-12-10
申请号：US14298100
申请日：2014-06-06
Applicant: Akoustis, Inc.
Inventor： Jeffrey B. SHEALY
CPC classification number: H03H9/02015 , H01L41/183 , H01L41/29 , H03H3/02 , H03H9/0095 , H03H9/02574 , H03H9/0542 , H03H9/174 , H03H9/175 , H03H9/205 , H03H9/54 , H03H9/542 , H03H9/568 , H03H9/605 , H03H9/64
Abstract: A configurable single crystal acoustic resonator (SCAR) device integrated circuit. The circuit comprises a plurality of SCAR devices numbered from 1 through N, where N is an integer of 2 and greater. Each of the SCAR device has a thickness of single crystal piezo material formed overlying a surface region of a substrate member. The single crystal piezo material is characterized by a dislocation density of less than 1012 defects/cm2.
Abstract translation: 可配置单晶声谐振器（SCAR）器件集成电路。 该电路包括从1到N编号的多个SCAR设备，其中N是2及更大的整数。 每个SCAR装置具有形成在衬底构件的表面区域上方的单晶压电材料的厚度。 单晶压电材料的特征在于位错密度小于1012缺陷/ cm2。
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