INTEGRATED CIRCUIT DEVICE AND ELECTRONIC INSTRUMENT
    1.
    发明申请
    INTEGRATED CIRCUIT DEVICE AND ELECTRONIC INSTRUMENT 有权
    集成电路设备和电子仪器

    公开(公告)号:US20090212867A1

    公开(公告)日:2009-08-27

    申请号:US12389916

    申请日:2009-02-20

    IPC分类号: H03G3/00

    CPC分类号: H03G5/24 H03H19/004

    摘要: An integrated circuit device includes an amplifier circuit that receives an input signal and performs an offset adjustment corresponding to a DC offset of the input signal and a gain adjustment corresponding to an amplitude of the input signal, a filter that is provided in a subsequent stage of the amplifier circuit, a cut-off frequency of the filter being variably set corresponding to a frequency band of the input signal, an A/D converter that is provided in a subsequent stage of the filter and performs an A/D conversion process on a signal amplified by the amplifier circuit, and a control circuit that sets an offset adjustment of the amplifier circuit, a gain adjustment of the amplifier circuit, and the cut-off frequency of the filter.

    摘要翻译: 集成电路装置包括:放大器电路,其接收输入信号并执行与输入信号的DC偏移相对应的偏移调整和对应于输入信号的幅度的增益调整;滤波器,其被设置在 所述放大器电路,对应于所述输入信号的频带可变地设置所述滤波器的截止频率; A / D转换器,其设置在所述滤波器的后续级中,并对所述滤波器进行A / D转换处理 由放大器电路放大的信号,以及设置放大器电路的偏移调整,放大器电路的增益调整和滤波器的截止频率的控制电路。

    INTEGRATED CIRCUIT DEVICE AND ELECTRONIC INSTRUMENT
    2.
    发明申请
    INTEGRATED CIRCUIT DEVICE AND ELECTRONIC INSTRUMENT 有权
    集成电路设备和电子仪器

    公开(公告)号:US20090212983A1

    公开(公告)日:2009-08-27

    申请号:US12389782

    申请日:2009-02-20

    IPC分类号: H03M1/12

    摘要: An integrated circuit device includes an amplifier circuit that includes first to Nth amplifiers, an A/D converter, first to Nth offset adjustment registers that are provided corresponding to the first to Nth amplifiers and store first to Nth offset adjustment data, first to Nth D/A converters provided corresponding to the first to Nth amplifiers, first to Nth offset value storage sections that store first to Nth offset value data, and a control circuit that calculates the first to Nth offset adjustment data based on the first to Nth offset value data, and sets the first to Nth offset adjustment data in the first to Nth offset adjustment registers.

    摘要翻译: 集成电路装置包括放大器电路,其包括第一至第N放大器,A / D转换器,对应于第一至第N放大器提供的第一至第N偏移调整寄存器,并存储第一至第N偏移调整数据,第一至第N D / A转换器,其对应于存储第一至第N偏移值数据的第一至第N放大器,第一至第N偏移值存储部分,以及控制电路,其基于第一至第N偏移值数据计算第一至第N偏移调整数据 并且在第一至第N偏移调整寄存器中设置第一至第N偏移调整数据。

    INTEGRATED CIRCUIT DEVICE AND ELECTRONIC INSTRUMENT
    3.
    发明申请
    INTEGRATED CIRCUIT DEVICE AND ELECTRONIC INSTRUMENT 有权
    集成电路设备和电子仪器

    公开(公告)号:US20090212860A1

    公开(公告)日:2009-08-27

    申请号:US12389681

    申请日:2009-02-20

    IPC分类号: H03F1/00

    摘要: An integrated circuit device includes an amplifier circuit that includes first to Nth amplifiers that are cascaded and receives an input signal, an A/D converter that performs an A/D conversion process on a signal amplified by the amplifier circuit, first to Nth D/A converters that are provided corresponding to the first to Nth amplifiers and used to perform an offset adjustment of the first to Nth amplifiers, and a control circuit that sets an offset adjustment of the first to Nth amplifiers using the first to Nth D/A converters and a gain adjustment of the first to Nth amplifiers.

    摘要翻译: 集成电路装置包括放大电路,其包括级联并接收输入信号的第一至第N放大器,对由放大器电路放大的信号执行A / D转换处理的A / D转换器,第一至第N / A转换器,其对应于第一至第N放大器提供并用于执行第一至第N放大器的偏移调整;以及控制电路,其使用第一至第N D / A转换器设置第一至第N放大器的偏移调整 以及第一至第N放大器的增益调整。

    A/D CONVERSION CIRCUIT AND ELECTRONIC INSTRUMENT
    4.
    发明申请
    A/D CONVERSION CIRCUIT AND ELECTRONIC INSTRUMENT 有权
    A / D转换电路和电子仪器

    公开(公告)号:US20090160693A1

    公开(公告)日:2009-06-25

    申请号:US12343796

    申请日:2008-12-24

    IPC分类号: H03M1/12

    CPC分类号: H03M1/002 H03M1/66

    摘要: An A/D conversion circuit includes a continuous-time filter that performs a filtering process on an input signal, an SCF that is provided in a subsequent stage of the continuous-time filter and performs a filtering process utilizing the continuous-time filter as a prefilter, a cut-off frequency of the SCF being variably set corresponding to a frequency band of the input signal, an A/D converter that is provided in a subsequent stage of the SCF and performs an A/D conversion operation utilizing the continuous-time filter and the SCF as prefilters, and a digital filter that is provided in a subsequent stage of the A/D converter and performs a digital filtering process utilizing the continuous-time filter and the SCF as prefilters, a cut-off frequency of the digital filter being variably set corresponding to the frequency band of the input signal.

    摘要翻译: A / D转换电路包括对输入信号执行滤波处理的连续时间滤波器,在连续时间滤波器的后续级中提供的SCF,并且使用连续时间滤波器作为滤波处理 预滤波器,对应于输入信号的频带可变地设定的SCF的截止频率,设置在SCF的后续级中的A / D转换器,并利用连续输出信号进行A / D转换操作, 时间滤波器和作为前置滤波器的SCF,以及在A / D转换器的后续级中提供的数字滤波器,并且使用连续时间滤波器和SCF作为预滤波器执行数字滤波处理,截止频率为 数字滤波器根据输入信号的频带可变地设定。

    CAMERA WITH FOCUS DETECTION UNIT
    5.
    发明申请
    CAMERA WITH FOCUS DETECTION UNIT 有权
    相机与焦点检测单元

    公开(公告)号:US20130016277A1

    公开(公告)日:2013-01-17

    申请号:US13543346

    申请日:2012-07-06

    申请人: Satoru ITO

    发明人: Satoru ITO

    IPC分类号: H04N5/232

    摘要: A camera of the present invention comprises a contrast detection section for detecting a contrast value, an assist light section for irradiating a subject by emitting light at a first luminance amount or a second luminance amount that is dimmer than the first luminance amount, and a control section for moving the photographing lens and detecting a focus position of the photographing lens based on contrast values detected by the contrast detection section, wherein the control section causes the assist light section to emit assist light in a first luminance amount or a second luminance amount, and detects a focus position of the photographing lens based on one of a first contrast value detected in a state where the assist light section emits light in the first luminance amount, or a second contrast value detected in a state where the assist light section emits light in the second luminance amount.

    摘要翻译: 本发明的照相机包括用于检测对比度值的对比度检测部分,用于通过以比第一亮度量更暗的第一亮度量或第二亮度量发光的照射对象的辅助光部分,以及控制 其中所述控制部使所述辅助光部以第一亮度量或第二亮度量发射辅助光,所述对比度检测部通过所述对比度检测部检测出的对比度值, 并且基于在辅助光部分以第一亮度量发光的状态下检测到的第一对比度值或在辅助光部分发光的状态下检测到的第二对比度值中的一个检测拍摄镜头的焦点位置 在第二亮度量。

    IMAGING DEVICE AND AUTOMATIC FOCUS ADJUSTMENT METHOD
    6.
    发明申请
    IMAGING DEVICE AND AUTOMATIC FOCUS ADJUSTMENT METHOD 有权
    成像装置和自动聚焦调整方法

    公开(公告)号:US20110205403A1

    公开(公告)日:2011-08-25

    申请号:US13032972

    申请日:2011-02-23

    申请人: Satoru ITO

    发明人: Satoru ITO

    IPC分类号: H04N5/217

    摘要: An imaging device of the present invention comprises an imaging section for forming a subject image using a photographing lens and generating image data, a contrast detection section for detecting contrast values corresponding to contrast of the subject image, for every position of the photographing lens, based on the image data, a subject brightness detection section for detecting brightness evaluation values corresponding to subject brightness of the subject image for every position of the photographing lens, based on the image data, a correction section for correcting the contrast values depending on a brightness evaluation value for a corresponding position of the photographing lens and calculating corrected contrast value, and a focus detection section for detecting a focus position of the photographing lens based on the corrected contrast values that have been corrected by the correction section.

    摘要翻译: 本发明的成像装置包括:成像部分,用于使用拍摄镜头形成被摄体图像并产生图像数据;对比度检测部分,用于检测与拍摄镜头的每个位置对应的被摄体图像的对比度值,基于 在图像数据上,被摄体亮度检测部分,用于根据图像数据检测与拍摄镜头的每个位置对应的被摄体图像的被摄体亮度的亮度评估值,校正部分,用于根据亮度评估校正对比度值 拍摄镜头的对应位置的值,以及计算校正后的对比度值;以及焦点检测部分,用于基于由校正部分校正的校正的对比度值来检测拍摄镜头的焦点位置。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    8.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号:US20100237440A1

    公开(公告)日:2010-09-23

    申请号:US12790148

    申请日:2010-05-28

    申请人: Satoru ITO

    发明人: Satoru ITO

    IPC分类号: H01L29/78 H01L21/336

    摘要: A semiconductor device includes a gate insulating film formed on a semiconductor region of a first conductivity type, a gate electrode formed on the gate insulating film and including a polysilicon film of a second conductivity type and a first silicon mixed crystal layer formed on the polysilicon film, a first silicide layer formed on the first silicon mixed crystal layer, impurity diffused regions of the second conductivity type formed in the semiconductor region laterally outside the gate electrode, second silicon mixed crystal layers containing carbon formed in upper regions of the impurity diffused regions, and second silicide layers formed on the second silicon mixed crystal layers.

    摘要翻译: 半导体器件包括形成在第一导电类型的半导体区域上的栅极绝缘膜,形成在栅极绝缘膜上的栅电极,并且包括形成在多晶硅膜上的第二导电类型的多晶硅膜和第一硅混晶层 形成在第一硅混晶层上的第一硅化物层,在栅电极的横向外侧的半导体区域中形成的第二导电类型的杂质扩散区域,在杂质扩散区域的上部区域中形成有碳的第二硅混晶层, 以及形成在第二硅混晶层上的第二硅化物层。