公开(公告)号：US12046523B2

公开(公告)日：2024-07-23

申请号：US16681539

申请日：2019-11-12

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Wen-Long Lu

IPC分类号： H01L23/16 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/538 ,  H01L23/66 ,  H01L25/00 ,  H01L25/16 ,  H01L21/683 ,  H01L23/00

CPC分类号： H01L23/16 ,  H01L21/4846 ,  H01L21/565 ,  H01L23/3128 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/66 ,  H01L25/16 ,  H01L25/50 ,  H01L21/6835 ,  H01L24/16 ,  H01L2223/6616 ,  H01L2224/16225 ,  H01L2924/3511

摘要： A semiconductor device package includes a substrate; an electronic component disposed on the substrate; multiple supporting structures disposed on the substrate; and a reinforced structure disposed on the supporting structures and extending in parallel with the substrate.

公开(公告)号：US11721652B2

公开(公告)日：2023-08-08

申请号：US17078070

申请日：2020-10-22

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Wen-Long Lu

IPC分类号： H01L23/00 ,  H01L23/66 ,  H01L23/498 ,  H01L21/48 ,  H01Q1/38

CPC分类号： H01L23/66 ,  H01L21/4853 ,  H01L21/4857 ,  H01L23/4985 ,  H01L23/49822 ,  H01L23/49838 ,  H01L24/16 ,  H01Q1/38 ,  H01L2223/6677 ,  H01L2224/16227

摘要： A semiconductor device package includes an electronic component and a substrate. The electronic component has a first surface and a second surface. The substrate is connected to the first surface of the electronic component through an adhesive layer. The substrate includes a first antenna disposed over the second surface of the electronic components through the adhesive layer.

公开(公告)号：US11699682B2

公开(公告)日：2023-07-11

申请号：US16994498

申请日：2020-08-14

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Wen-Long Lu

IPC分类号： H01L25/065 ,  H01L23/538 ,  H01L21/50 ,  H01L21/768

CPC分类号： H01L25/0657 ,  H01L21/50 ,  H01L21/76802 ,  H01L21/76877 ,  H01L23/5384 ,  H01L23/5386

摘要： A semiconductor device package and a method of manufacturing the same are provided. The semiconductor device package includes a first module, a second module, a first intermediate circuit layer, a first conductive transmission path and a second conductive transmission path. The second module is stacked on the first module. The first intermediate circuit layer is arranged between the first module and the second module. The first conductive transmission is configured to electrically connect the first semiconductor module with the first intermediate circuit layer. The second conductive transmission path is configured to electrically connect the first intermediate circuit layer with the second semiconductor module.

公开(公告)号：US11177552B2

公开(公告)日：2021-11-16

申请号：US16578092

申请日：2019-09-20

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Wen-Long Lu

IPC分类号： H01Q1/22 ,  H01L23/498 ,  H01L21/48 ,  H01Q1/38 ,  H01Q9/04 ,  H01L23/66 ,  H01L23/00

摘要： A semiconductor device package includes a dielectric layer and a stacking conductive structure. The dielectric layer includes a first surface. The stacking conductive structure is disposed on the first surface of the dielectric layer. The stacking conductive structure includes a first conductive layer disposed on the first surface of the dielectric layer, and a second conductive layer stacked on the first conductive layer. A first surface roughness of the first surface of the dielectric layer is larger than a second surface roughness of a top surface of the first conductive layer, and the second surface roughness of the top surface of the first conductive layer is larger than a third surface roughness of a top surface of the second conductive layer.

公开(公告)号：US11158572B2

公开(公告)日：2021-10-26

申请号：US16557740

申请日：2019-08-30

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Wen-Long Lu

IPC分类号： H01L23/522 ,  H01L23/00 ,  H01L21/768 ,  H01L23/31 ,  H01L21/56

摘要： A package structure includes a base material, at least one electronic device, at least one dummy pillar and an encapsulant. The electronic device is electrically connected to the base material. The dummy pillar is disposed on the base material. The encapsulant covers the electronic device and a top end of the dummy pillar.

公开(公告)号：US11024569B2

公开(公告)日：2021-06-01

申请号：US15673239

申请日：2017-08-09

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Jen-Kuang Fang ,  Wen-Long Lu

IPC分类号： H01L23/498 ,  H01L25/065 ,  H01L23/31 ,  H01L25/00 ,  H01L23/00 ,  H01L21/683 ,  H01L21/56

摘要： A semiconductor package device includes a circuit layer having a top surface, a first electronic component disposed on the top surface of the circuit layer, and a first conductive element disposed on the top surface of the circuit layer, the first conductive element having a top surface. The first electronic component has an active surface and a back surface facing the top surface of the circuit layer. A distance between the active surface of the first electronic component and the top surface of the circuit layer is greater than a distance between the top surface of the first conductive element and the top surface of the circuit layer.

公开(公告)号：US10998251B2

公开(公告)日：2021-05-04

申请号：US16244991

申请日：2019-01-10

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Wen-Long Lu

IPC分类号： H01L23/42 ,  H01L23/00 ,  H01L21/56 ,  H01L23/31 ,  H01L23/522 ,  H01L23/528

摘要： A semiconductor trace structure is provided for carrying a heat source. The semiconductor device package includes a dielectric structure having a first surface configured to receive the heat source and a second surface opposite to the first surface; a cavity defined by the dielectric structure to accommodate a fluid. The cavity includes a first passage portion between the first surface and the second surface. A first area of the first passage portion is closer to the heat source than a second area of the first passage portion, and that the first area is greater than the second area from a top view perspective. A method for manufacturing the semiconductor trace structure is also provided.

公开(公告)号：US10420211B2

公开(公告)日：2019-09-17

申请号：US15673235

申请日：2017-08-09

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Wen-Long Lu

IPC分类号： H01L23/31 ,  H01L23/49 ,  H05K1/11 ,  H01L23/00 ,  H01L23/498

摘要： A semiconductor package device includes a passivation layer, a conductive element, a redistribution layer (RDL) and an electronic component. The passivation layer has a first surface and second surface opposite to the first surface. The conductive element is within the passivation layer. The conductive element defines a recess facing the second surface of the passivation layer. The RDL is on the passivation layer and electrically connected with the conductive element. The electronic component is disposed on the RDL and electrically connected with the RDL.

公开(公告)号：US10418316B1

公开(公告)日：2019-09-17

申请号：US15945426

申请日：2018-04-04

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Wen-Long Lu

IPC分类号： H01L23/52 ,  H01L23/498 ,  H01L23/00 ,  H01L23/31 ,  H01L21/48 ,  H01L21/027

摘要： A semiconductor substrate includes a first dielectric structure and a first circuit layer. The first circuit layer is embedded in the first dielectric structure. The first circuit layer does not protrude from a first surface of the first dielectric structure. The first circuit layer includes at least one conductive segment. The conductive segment includes a first portion adjacent to the first surface of the first dielectric structure and a second portion opposite to the first portion. A width of the first portion of the conductive segment is different from a width of the second portion of the conductive segment.

公开(公告)号：US10224301B2

公开(公告)日：2019-03-05

申请号：US15642005

申请日：2017-07-05

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Jen-Kuang Fang ,  Wen-Long Lu

IPC分类号： H01L23/00 ,  H01L23/055 ,  H01L25/065 ,  B23K35/02 ,  B23K101/40

摘要： A semiconductor package device includes a carrier, a first electronic component, and a conductive element on the carrier. The first electronic component is over the carrier. The conductive element is on the carrier and electrically connects the first electronic component to the carrier. The conductive element includes at least one conductive particle and a solder material covering the conductive particle, and the conductive particle includes a metal core, a barrier layer covering the metal core, and a metal layer covering the barrier layer.