公开(公告)号：US08994191B2

公开(公告)日：2015-03-31

申请号：US14159813

申请日：2014-01-21

申请人： Advanced Micro Devices Co., Ltd (Shanghai)

发明人： I-Tseng Lee ,  Yi Hsiu Liu

IPC分类号： H01L29/40 ,  H01L23/52 ,  H01L23/48 ,  H01L23/00

CPC分类号： H01L24/17 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/1134 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/1356 ,  H01L2224/16113 ,  H01L2224/16221 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/17134 ,  H01L2224/17179 ,  H01L2224/17515 ,  H01L2224/17517 ,  H01L2224/26125 ,  H01L2224/26155 ,  H01L2224/29011 ,  H01L2224/29012 ,  H01L2224/29019 ,  H01L2224/2919 ,  H01L2224/3201 ,  H01L2224/32057 ,  H01L2224/32058 ,  H01L2224/32059 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/83191 ,  H01L2224/83193 ,  H01L2225/06513 ,  H01L2225/06565 ,  H01L2924/07025 ,  H01L2924/15311 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00012

摘要： The present invention relates to die-die stacking structure and the method for making the same. The die-die stacking structure comprises a top die having a bottom surface, a first insulation layer covering the bottom surface of the top die, a bottom die having a top surface, a second insulation layer covering the top surface of the bottom die, a plurality of connection members between the top die and the bottom die and a protection material between the first insulation layer and the second insulation layer. The plurality of connection members communicates the top die with the bottom die. The protection material bridges the plurality of connection members to form a mesh layout between the first insulation layer and the second insulation layer. The structure and method of present invention at least provide more strength and stress buffer to resist die warpage and absorb thermal cycling stress, and then prevents the bump and dielectric materials in the die-die stacking structure from cracking caused by thermal stress or external mechanical stress.

摘要翻译： 本发明涉及模片堆叠结构及其制造方法。 模片堆叠结构包括具有底表面的顶模，覆盖顶模的底表面的第一绝缘层，具有顶表面的底模，覆盖底模顶表面的第二绝缘层， 顶模和底模之间的多个连接构件和第一绝缘层与第二绝缘层之间的保护材料。 多个连接构件将顶模与底模连通。 保护材料桥接多个连接构件以在第一绝缘层和第二绝缘层之间形成网格布局。 本发明的结构和方法至少提供更多的强度和应力缓冲以抵抗模翘曲并吸收热循环应力，然后防止模芯堆叠结构中的凸起和介电材料由热应力或外部机械应力引起的破裂 。