公开(公告)号：US08941089B2

公开(公告)日：2015-01-27

申请号：US13767800

申请日：2013-02-14

申请人： Adesto Technologies Corporation

发明人： Chakravarthy Gopalan ,  Jeffrey Shields ,  Venkatesh Gopinath ,  Janet Siao-Yian Wang ,  Kuei-Chang Tsai

IPC分类号： H01L29/04 ,  H01L45/00 ,  H01L21/06 ,  H01L21/04

CPC分类号： H01L45/08 ,  H01L21/04 ,  H01L21/06 ,  H01L21/76865 ,  H01L45/065 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16

摘要： In accordance with an embodiment of the present invention, a resistive switching device includes an opening disposed within a first dielectric layer, a conductive barrier layer disposed on sidewalls of the opening, a fill material including an inert material filling the opening. A solid electrolyte layer is disposed over the opening. The solid electrolyte contacts the fill material but not the conductive barrier layer. A top electrode is disposed over the solid electrolyte.

摘要翻译： 根据本发明的实施例，电阻式开关装置包括设置在第一电介质层内的开口，设置在开口侧壁上的导电阻挡层，填充材料，填充材料填充开口。 固体电解质层设置在开口上方。 固体电解质与填充材料接触，但不与导电阻挡层接触。 顶部电极设置在固体电解质上。

公开(公告)号：US20170279045A1

公开(公告)日：2017-09-28

申请号：US15480673

申请日：2017-04-06

申请人： Adesto Technologies Corporation

发明人： John Ross Jameson, III ,  Jeffrey Allan Shields ,  Kuei-Chang Tsai

IPC分类号： H01L45/00

CPC分类号： H01L45/1253 ,  G11C13/0011 ,  G11C2213/50 ,  H01L45/04 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1266 ,  H01L45/16 ,  H01L45/1608

摘要： A memory element can include a first electrode; at least one switching layer formed over the first electrode; a second electrode layer; and at least one conductive cap layer formed over the second electrode layer having substantially no grain boundaries extending through to the second electrode layer; wherein the at least one switching layer is programmable between different impedance states by application of electric fields via that first and second electrode. Methods of forming such memory elements are also disclosed.

公开(公告)号：US20130214234A1

公开(公告)日：2013-08-22

申请号：US13767800

申请日：2013-02-14

申请人： Adesto Technologies Corporation

发明人： Chakravarthy Gopalan ,  Jeffrey Shields ,  Venkatesh Gopinath ,  Janet Siao-Yian Wang ,  Kuei-Chang Tsai

IPC分类号： H01L45/00

CPC分类号： H01L45/08 ,  H01L21/04 ,  H01L21/06 ,  H01L21/76865 ,  H01L45/065 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16

摘要： In accordance with an embodiment of the present invention, a resistive switching device includes an opening disposed within a first dielectric layer, a conductive barrier layer disposed on sidewalls of the opening, a fill material including an inert material filling the opening. A solid electrolyte layer is disposed over the opening. The solid electrolyte contacts the fill material but not the conductive barrier layer. A top electrode is disposed over the solid electrolyte.

摘要翻译： 根据本发明的实施例，电阻式开关装置包括设置在第一电介质层内的开口，设置在开口侧壁上的导电阻挡层，填充材料，填充材料填充开口。 固体电解质层设置在开口上方。 固体电解质与填充材料接触，但不与导电阻挡层接触。 顶部电极设置在固体电解质上。