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公开(公告)号：US09903823B2
公开(公告)日：2018-02-27
申请号：US14945257
申请日：2015-11-18
Applicant: ASML NETHERLANDS B.V.
Inventor： Yen-Wen Lu , Jay Jianhui Chen , Wei Liu , Boris Menchtchikov , Jen-Shiang Wang , Te-Chih Huang
CPC classification number: G01N21/8806 , G01B11/272 , G01N21/9501 , G01N2021/8822 , G03F7/70516 , G03F7/70633 , G03F7/70683
Abstract: A method to determine an overlay error between a first structure and a second structure, wherein the first structure and second structures are on different layers on a substrate and are imaged onto the substrate by a lithographic process, the method comprising: obtaining an apparent overlay error; obtaining a systematic error caused by a factor other than misalignment of the first and second structures; and determining the overlay error by removing the systematic error from the apparent overlay error. The method may alternatively comprise obtaining apparent characteristics of diffraction orders of diffraction by an overlapping portion of the first and second structures; obtaining corrected characteristics of the diffraction orders; determining the overlay error from the corrected characteristics; and adjusting a characteristic of the lithographic process based on the overlay error.
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公开(公告)号：US10180628B2
公开(公告)日：2019-01-15
申请号：US14892176
申请日：2014-05-23
Applicant: ASML Netherlands B.V.
Inventor： Hugo Augustinus Joseph Cramer , Arie Jeffrey Den Boef , Henricus Johannes Lambertus Megens , Maurits Van Der Schaar , Te-Chih Huang
IPC: G03F7/20
Abstract: A method of determining a critical-dimension-related property, such as critical dimension (CD) or exposure dose, includes illuminating each of a plurality of periodic targets having different respective critical dimension biases, measuring intensity of radiation scattered by the targets, recognizing and extracting each grating from the image, determining a differential signal, and determining the CD-related property based on the differential signal, the CD biases and knowledge that the differential signal approximates to zero at a 1:1 line-to-space ratio of such periodic targets. Use of the determined CD-related property to control a lithography apparatus in lithographic processing of subsequent substrates. In order to use just two CD biases, a calibration may use measurements on a “golden wafer” (i.e. a reference substrate) to determine the intensity gradient for each of the CD pairs, with known CDs. Alternatively, the calibration can be based upon simulation of the sensitivity of intensity gradient to CD.
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Patent Agency Ranking
公开(公告)号：US10162272B2
公开(公告)日：2018-12-25
申请号：US15240781
申请日：2016-08-18
Applicant: ASML NETHERLANDS B.V.
Inventor： Martin Jacobus Johan Jak , Hendrik Jan Hidde Smilde , Te-Chih Huang , Victor Emanuel Calado , Henricus Wilhelmus Maria Van Buel , Richard Johannes Franciscus Van Haren
Abstract: A substrate has a plurality of overlay gratings formed thereon by a lithographic process. Each overlay grating has a known overlay bias. The values of overlay bias include for example two values in a region centered on zero and two values in a region centered on P/2, where P is the pitch of the gratings. Overlay is calculated from asymmetry measurements for the gratings using knowledge of the different overlay bias values, each of the overall asymmetry measurements being weighted by a corresponding weight factor. Each one of the weight factors represents a measure of feature asymmetry within the respective overlay grating. The calculation is used to improve subsequent performance of the measurement process, and/or the lithographic process. Some of the asymmetry measurements may additionally be weighted by a second weight factor in order to eliminate or reduce the contribution of phase asymmetry to the overlay.
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公开(公告)号：US20160146740A1
公开(公告)日：2016-05-26
申请号：US14945257
申请日：2015-11-18
Applicant: ASML NETHERLANDS B.V.
Inventor： Yen-Wen Lu , Jay Jianhui Chen , Wei Liu , Boris Menchtchikov , Jen-Shiang Wang , Te-Chih Huang
CPC classification number: G01N21/8806 , G01B11/272 , G01N21/9501 , G01N2021/8822 , G03F7/70516 , G03F7/70633 , G03F7/70683
Abstract: A method to determine an overlay error between a first structure and a second structure, wherein the first structure and second structures are on different layers on a substrate and are imaged onto the substrate by a lithographic process, the method comprising: obtaining an apparent overlay error; obtaining a systematic error caused by a factor other than misalignment of the first and second structures; and determining the overlay error by removing the systematic error from the apparent overlay error. The method may alternatively comprise obtaining apparent characteristics of diffraction orders of diffraction by an overlapping portion of the first and second structures; obtaining corrected characteristics of the diffraction orders; determining the overlay error from the corrected characteristics; and adjusting a characteristic of the lithographic process based on the overlay error.
Abstract translation: 一种确定第一结构和第二结构之间的覆盖误差的方法，其中所述第一结构和第二结构位于衬底上的不同层上，并通过光刻工艺成像到所述衬底上，所述方法包括：获得明显的重叠误差 ; 获得由除了第一和第二结构的未对准之外的因素引起的系统误差; 并通过从明显重叠错误中移除系统误差来确定覆盖误差。 该方法可以替代地包括通过第一和第二结构的重叠部分获得衍射衍射级数的明显特征; 获得衍射级的校正特性; 从校正的特征确定覆盖误差; 以及基于重叠误差来调整光刻处理的特性。
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公开(公告)号：US11320745B2
公开(公告)日：2022-05-03
申请号：US17012705
申请日：2020-09-04
Applicant: ASML Netherlands B.V.
Inventor： Maurits Van Der Schaar , Arie Jeffrey Den Boef , Omer Abubaker Omer Adam , Te-Chih Huang , Youping Zhang
Abstract: There is disclosed a method of measuring a process parameter for a manufacturing process involving lithography. In a disclosed arrangement the method comprises performing first and second measurements of overlay error in a region on a substrate, and obtaining a measure of the process parameter based on the first and second measurements of overlay error. The first measurement of overlay error is designed to be more sensitive to a perturbation in the process parameter than the second measurement of overlay error by a known amount.
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公开(公告)号：US20190018326A1
公开(公告)日：2019-01-17
申请号：US16125074
申请日：2018-09-07
Applicant: ASML Netherlands B.V.
Inventor： Maurits Van Der Schaar , Arie Jeffrey Den Boef , Omer Abubaker Omer Adam , Te-Chih Huang , Youping Zhang
Abstract: There is disclosed a method of measuring a process parameter for a manufacturing process involving lithography. In a disclosed arrangement the method comprises performing first and second measurements of overlay error in a region on a substrate, and obtaining a measure of the process parameter based on the first and second measurements of overlay error. The first measurement of overlay error is designed to be more sensitive to a perturbation in the process parameter than the second measurement of overlay error by a known amount.
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公开(公告)号：US10073357B2
公开(公告)日：2018-09-11
申请号：US15117409
申请日：2015-01-28
Applicant: ASML Netherlands B.V.
Inventor： Maurits Van Der Schaar , Arie Jeffrey Den Boef , Omer Abubaker Omer Adam , Te-Chih Huang , Youping Zhang
CPC classification number: G03F7/70633 , G01N21/47 , G01N21/8806 , G01N2201/12 , G03F7/70683
Abstract: There is disclosed a method of measuring a process parameter for a manufacturing process involving lithography. In a disclosed arrangement the method comprises performing first and second measurements of overlay error in a region on a substrate, and obtaining a measure of the process parameter based on the first and second measurements of overlay error. The first measurement of overlay error is designed to be more sensitive to a perturbation in the process parameter than the second measurement of overlay error by a known amount.
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