PATTERN SELECTION SYSTEMS AND METHODS

    公开(公告)号:US20240370621A1

    公开(公告)日:2024-11-07

    申请号:US18686994

    申请日:2022-08-22

    Abstract: Selecting an optimized, geometrically diverse subset of clips for a design layout for a semiconductor wafer is described. A complete representation of the design layout is received. A set of representative clips of the design layout is determined such that individual representative clips comprise different combinations of one or more unique patterns of the design layout. A subset of the representative clips is selected based on the one or more unique patterns. The subset of the representative clips is configured to include: (1) each geometrically unique pattern in a minimum number of representative clips; or (2) as many geometrically unique patterns of the design layout as possible in a maximum number of representative clips. The subset of representative clips is provided as training data for training an optical proximity correction or source mask optimization semiconductor process machine learning model, for example.

    METHOD OF EVALUATING SELECTED SET OF PATTERNS

    公开(公告)号:US20240345487A1

    公开(公告)日:2024-10-17

    申请号:US18681613

    申请日:2022-08-02

    CPC classification number: G03F7/705 G03F7/70441

    Abstract: Systems and methods for evaluating selected set of patterns of a design layout. A method herein includes obtaining (i) a first pattern set resulting from a pattern selection process, (ii) first pattern data associated with the first pattern set, (iii) characteristic data associated with the first pattern data, and (iv) second pattern data associated with a second pattern set. A machine learning model is trained based on the characteristic data, where the machine learning model being configured to predict pattern data for an input pattern. The second pattern set is input to the trained machine learning model to predict second pattern data of the second pattern set. The first pattern set is evaluated by comparing the second pattern data and the predicted second pattern data. If the evaluation indicates insufficient pattern coverage, additional patterns can be included to improve the pattern coverage.

    FIELD OF VIEW SELECTION FOR METROLOGY ASSOCIATED WITH SEMICONDUCTOR MANUFACTURING

    公开(公告)号:US20250147433A1

    公开(公告)日:2025-05-08

    申请号:US18834131

    申请日:2023-01-31

    Abstract: Selecting one or more lists of fields of view of a pattern layout for scanning electron microscope measurement and/or other inspection. A set of candidate fields of view is determined based on pattern groups of a pattern layout and a constraint on a characteristic of a given field of view. The characteristic of a given field of view includes a distance from the given field of view to another field of view and/or a size of the given field of view. The one or more lists are selected from the set of candidate fields of view according to prescribed criteria for combinations of fields of view included in the one or more lists. The prescribed criteria causes inclusion of an optimally diverse group of patterns in a predetermined number of lists of fields of view.

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