公开(公告)号：US20250147433A1

公开(公告)日：2025-05-08

申请号：US18834131

申请日：2023-01-31

Applicant: ASML NETHERLANDS B.V.

Inventor： Tsung-Pao FANG ,  Been-Der CHEN ,  Wei-Yin LIN ,  Fei YAN ,  Meng LIU ,  Rencheng SUN

IPC: G03F7/00 ,  G01N23/2251

Abstract: Selecting one or more lists of fields of view of a pattern layout for scanning electron microscope measurement and/or other inspection. A set of candidate fields of view is determined based on pattern groups of a pattern layout and a constraint on a characteristic of a given field of view. The characteristic of a given field of view includes a distance from the given field of view to another field of view and/or a size of the given field of view. The one or more lists are selected from the set of candidate fields of view according to prescribed criteria for combinations of fields of view included in the one or more lists. The prescribed criteria causes inclusion of an optimally diverse group of patterns in a predetermined number of lists of fields of view.

公开(公告)号：US20240345487A1

公开(公告)日：2024-10-17

申请号：US18681613

申请日：2022-08-02

Applicant: ASML NETHERLANDS B.V.

Inventor： Rencheng SUN ,  Feng YANG ,  Meng LIU ,  Fei YAN

IPC: G03F7/00

CPC classification number: G03F7/705 ,  G03F7/70441

Abstract: Systems and methods for evaluating selected set of patterns of a design layout. A method herein includes obtaining (i) a first pattern set resulting from a pattern selection process, (ii) first pattern data associated with the first pattern set, (iii) characteristic data associated with the first pattern data, and (iv) second pattern data associated with a second pattern set. A machine learning model is trained based on the characteristic data, where the machine learning model being configured to predict pattern data for an input pattern. The second pattern set is input to the trained machine learning model to predict second pattern data of the second pattern set. The first pattern set is evaluated by comparing the second pattern data and the predicted second pattern data. If the evaluation indicates insufficient pattern coverage, additional patterns can be included to improve the pattern coverage.

公开(公告)号：US20220035256A1

公开(公告)日：2022-02-03

申请号：US17276533

申请日：2019-09-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Youping ZHANG ,  Weixuan HU ,  Fei YAN ,  Wei PENG ,  Vivek Kumar JAIN

IPC: G03F7/20

Abstract: A method of hot spot ranking for a patterning process. The method includes obtaining (i) a set of hot spots of a patterning process, (ii) measured values of one or more parameters of the patterning process corresponding to the set of hot spots, and (ii) simulated values of the one or more parameters of the patterning process corresponding to the set of hot spots; determining a measurement feedback based on the measured values and the simulated values of the one or more parameters of the patterning process; and determining, via simulation of a process model of the patterning process, a ranking of a hot spot within the set of hot spots based on the measurement feedback.