公开(公告)号：US20220390850A1

公开(公告)日：2022-12-08

申请号：US17775361

申请日：2020-10-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Ruud Antonius Catharina Maria BEERENS ,  Koen Gerhardus WINKELS ,  Dirk Willem HARBERTS ,  Lucas Henricus Johannes STEVENS ,  Dennis Dominic VAN DER VOORT ,  Edwin Johannes Cornelis BOS ,  George Alois Leonie LEENKNEGT ,  Nicolaas TEN KATE

IPC: G03F7/20 ,  H01L21/687 ,  H01L21/67

Abstract: A substrate support is configured to support a substrate. The substrate support comprises a plurality of burls protruding from a base surface of the substrate support. The burls have distal ends in a plane for supporting a lower surface of the substrate with a gap between the base surface of the substrate support and the lower surface of the substrate. The substrate support comprises a liquid supply channel for supplying a conductive liquid to the gap so as to bridge the gap between the base surface of the substrate support and the lower surface of the substrate, thereby allowing charge to pass between the substrate support and the substrate. The substrate support has a controlled electrical potential such that charge distribution at the lower surface of the substrate can be manipulated.

公开(公告)号：US20230334217A1

公开(公告)日：2023-10-19

申请号：US18206029

申请日：2023-06-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Chrysostomos BATISTAKIS ,  Roger Josef Maria JEURISSEN ,  Koen Gerhardus WINKELS

IPC: G03F7/20 ,  G06F30/3308 ,  G06F30/398 ,  G06F30/28

CPC classification number: G06F30/398 ,  G03F7/705 ,  G06F30/28 ,  G06F30/3308 ,  G03F7/70625 ,  G06F2119/18

Abstract: A method for determining a deformation of a resist in a patterning process. The method involves obtaining a resist deformation model of a resist having a pattern, the resist deformation model configured to simulate a fluid flow of the resist due to capillary forces acting on a contour of at least one feature of the pattern; and determining, via the resist deformation model, a deformation of a resist pattern to be developed based on an input pattern to the resist deformation model.

公开(公告)号：US20230048723A1

公开(公告)日：2023-02-16

申请号：US17796545

申请日：2021-01-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Nicolaas TEN KATE ,  Koen Gerhardus WINKELS ,  Michel Ben Isel HABETS

IPC: G03F7/20

Abstract: Substrate tables for lithography and methods of handling a substrate. In one arrangement, a substrate table includes one or more membranes. An actuation system deforms each membrane to change a height of a portion of the membrane. In another arrangement, a substrate table includes one or more membranes and a clamping system for clamping a substrate to the substrate table, wherein the clamping deforms each membrane by pressing the substrate against the membrane.

公开(公告)号：US20230004092A1

公开(公告)日：2023-01-05

申请号：US17778054

申请日：2020-11-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Michael Marinus Anna STEUR ,  Nicolaas TEN KATE ,  Siegfried Alexander TROMP ,  Koen Gerhardus WINKELS ,  Antonius Franciscus Johanne DE GROOT

IPC: G03F7/20 ,  H01L21/687

Abstract: Substrate tables and methods of manufacturing substrate supports for substrate tables. In one arrangement, a plurality of holes are formed through a base member. A burl formation member is joined to the base member. A plurality of burl structures are formed in the burl formation member. Each burl structure includes a distal surface that contacts, in use, a substrate being supported. Each burl structure has an opening to at least one of the holes formed through the base member.

公开(公告)号：US20220075275A1

公开(公告)日：2022-03-10

申请号：US17416314

申请日：2019-12-13

Applicant: ASML NETHERLANDS B.V.

Inventor： Chrysostomos BATISTAKIS ,  Roger Josef Maria JEURISSEN ,  Koen Gerhardus WINKELS

IPC: G03F7/20 ,  G06F30/392

Abstract: A method for determining a deformation of a resist in a patterning process. The method involves obtaining a resist deformation model of a resist having a pattern, the resist deformation model configured to simulate a fluid flow of the resist due to capillary forces acting on a contour of at least one feature of the pattern; and determining, via the resist deformation model, a deformation of a resist pattern to be developed based on an input pattern to the resist deformation model.