公开(公告)号：US20220357672A1

公开(公告)日：2022-11-10

申请号：US17762863

申请日：2020-09-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Frank STAALS

IPC: G03F7/20

Abstract: A method of inferring a value for a first processing parameter of a lithographic process, the first processing parameter being subject to a coupled dependency of a second processing parameter. The method includes determining a first metric and a second metric from measurement data, each of the first metric and second metric being dependent on both the first processing parameter and second processing parameter The first metric shows a stronger dependence to the first processing parameter than the second processing parameter and the second metric shows a stronger dependence to the second processing parameter than the first processing parameter. The value for the first processing parameter is inferred from the first and second metrics.

公开(公告)号：US20220146946A1

公开(公告)日：2022-05-12

申请号：US17437884

申请日：2020-02-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Frank STAALS ,  Simon Hendrik Celine VAN GORP

IPC: G03F7/20

Abstract: A method for configuring an apparatus for providing structures to a layer on a substrate, the method including: obtaining first data including substrate specific data as measured and/or modeled before the providing of the structures to the layer on the substrate; and determining a configuration of the apparatus for at least two different control regimes based on the first data and the use of a common merit function including parameters associated with the at least two control regimes.

公开(公告)号：US20190171114A1

公开(公告)日：2019-06-06

申请号：US16192853

申请日：2018-11-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Frank STAALS ,  Eric Jos Anton Brouwer ,  Carlo Cornelis Maria Luijten ,  Jean-Pierre Agnes Henricus Marie Vaessen

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/956

Abstract: A focus metrology target includes one or more periodic arrays of features. A measurement of focus performance of a lithographic apparatus is based at least in part on diffraction signals obtained from the focus metrology target. Each periodic array of features includes a repeating arrangement of first zones interleaved with second zones, a feature density being different in the first zones and the second zones. Each first zone includes a repeating arrangement of first features. A minimum dimension of each first feature is close to but not less than a resolution limit of the printing by the lithographic apparatus, so as to comply with a design rule in a given a process environment. A region of high feature density may further include a repeating arrangement of larger features.

公开(公告)号：US20170153558A1

公开(公告)日：2017-06-01

申请号：US15358321

申请日：2016-11-22

Applicant: ASML Netherlands B.V.

Inventor： Wim Tjibbo TEL ,  Frank STAALS

IPC: G03F9/00

CPC classification number: G03F7/70683 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70641 ,  G03F9/7026

Abstract: Disclosed is a substrate comprising a combined target for measurement of overlay and focus. The target comprises: a first layer comprising a first periodic structure; and a second layer comprising a second periodic structure overlaying the first periodic structure. The target has structural asymmetry which comprises a structural asymmetry component resultant from unintentional mismatch between the first periodic structure and the second periodic structure, a structural asymmetry component resultant from an intentional positional offset between the first periodic structure and the second periodic structure and a focus dependent structural asymmetry component which is dependent upon a focus setting during exposure of said combined target on said substrate. Also disclosed is a method for forming such a target, and associated lithographic and metrology apparatuses.

公开(公告)号：US20240012337A1

公开(公告)日：2024-01-11

申请号：US18229984

申请日：2023-08-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Mark John MASLOW ,  Koenraad VAN INGEN SCHENAU ,  Patrick WARNAAR ,  Abraham SLACHTER ,  Roy ANUNCIADO ,  Simon Hendrik Celine VAN GORP ,  Frank STAALS ,  Marinus JOCHEMSEN

IPC: G03F7/00 ,  G06T7/00 ,  H01L21/66 ,  G06F30/20

CPC classification number: G03F7/70625 ,  G06T7/0004 ,  H01L22/20 ,  G06F30/20 ,  H01L21/00

Abstract: A method for determining a metric of a feature on a substrate obtained by a semiconductor manufacturing process involving a lithographic process, the method including: obtaining an image of at least part of the substrate, wherein the image includes at least the feature; determining a contour of the feature from the image; determining a plurality of segments of the contour; determining respective weights for each of the plurality of segments; determining, for each of the segments, an image-related metric; and determining the metric of the feature in dependence on the weights and the calculated image-related metric of each of the segments.

公开(公告)号：US20230305407A1

公开(公告)日：2023-09-28

申请号：US18018065

申请日：2021-07-06

Applicant: ASML Netherlands B.V.

Inventor： Fei LIU ,  Jin LIAN ,  Zhuangxiong HUANG ,  Laurentius Cornelius DE WINTER ,  Frank STAALS

IPC: G03F7/20 ,  G01N21/47 ,  G03F7/00

CPC classification number: G03F7/70641 ,  G01N21/4738 ,  G01N21/4788 ,  G03F7/706851

Abstract: Disclosed is a method for focus measurement of a lithographic process. The method comprises receiving a substrate on which a metrology pattern has been printed with a lithographic apparatus with an illumination pupil, illuminating the metrology pattern with a metrology tool to measure a signal based on radiation scattered by the metrology pattern, and determining or monitoring a focus of the lithographic process based on the measured signal. Position of at least part of the metrology pattern is focus dependent. At least part of the metrology pattern has been printed by the lithography apparatus with an angular asymmetric illumination pupil.

公开(公告)号：US20210018847A1

公开(公告)日：2021-01-21

申请号：US17061641

申请日：2020-10-02

Applicant: ASML NETHERLANDS B.V.

Inventor： Emil Peter SCHMITT-WEAVER ,  Kaustuve BHATTACHARYYA ,  Wim Tjibbo TEL ,  Frank STAALS ,  Leon Martin LEVASIER

IPC: G03F7/20 ,  G03F9/00

Abstract: A method for monitoring a lithographic process, and associated lithographic apparatus. The method includes obtaining height variation data relating to a substrate supported by a substrate support and fitting a regression through the height variation data, the regression approximating the shape of the substrate; residual data between the height variation data and the regression is determined; and variation of the residual data is monitored over time. The residual data may be deconvolved based on known features of the substrate support.

公开(公告)号：US20200264522A1

公开(公告)日：2020-08-20

申请号：US16645672

申请日：2018-08-03

Applicant: ASML Netherlands B.V.

Inventor： Laurentius Cornelius DE WINTER ,  Roland Pieter STOLK ,  Frank STAALS ,  Anton Bernhard VAN OOSTEN ,  Paul Christiaan HINNEN ,  Marinus JOCHEMSEN ,  Thomas THEEUWES ,  Eelco VAN SETTEN

IPC: G03F7/20 ,  G21K1/06

Abstract: Disclosed is a method of measuring focus performance of a lithographic apparatus, and corresponding patterning device and lithographic apparatus. The method comprises using the lithographic apparatus to print one or more first printed structures and second printed structures. The first printed structures are printed by illumination having a first non-telecentricity and the second printed structures being printed by illumination having a second non-telecentricity, different to said first non-telecentricity. A focus dependent parameter related to a focus-dependent positional shift between the first printed structures and the second printed structures on said substrate is measured and a measurement of focus performance based at least in part on the focus dependent parameter is derived therefrom.

公开(公告)号：US20200159130A1

公开(公告)日：2020-05-21

申请号：US16688438

申请日：2019-11-19

Applicant: ASML Netherlands B.V.

Inventor： Frank STAALS

IPC: G03F7/20

Abstract: Disclosed is a method of measuring focus performance of a lithographic apparatus. The method comprises using the lithographic apparatus to print at least one focus metrology pattern on a substrate, the printed focus metrology pattern comprising at least a first periodic array of features, and using inspection radiation to measure asymmetry between opposite portions of a diffraction spectrum for the first periodic array in the printed focus metrology pattern. A measurement of focus performance is derived based at least in part on the asymmetry measured. The first periodic array comprises a repeating arrangement of a space region having no features and a pattern region having at least one first feature comprising sub-features projecting from a main body and at least one second feature; and wherein the first feature and second feature are in sufficient proximity to be effectively detected as a single feature during measurement. A patterning device comprising said first periodic array is also disclosed.

公开(公告)号：US20200026182A1

公开(公告)日：2020-01-23

申请号：US16456878

申请日：2019-06-28

Applicant: ASML Netherlands B.V.

Inventor： Miguel GARCIA GRANDA ,  Steven Erik STEEN ,  Eric Jos Anton BROUWER ,  Bart Peter Bert SEGERS ,  Pierre-Yves Jerome Yvan GUITTET ,  Frank STAALS ,  Paulus Jacobus Maria VAN ADRICHEM

IPC: G03F1/44 ,  G03F1/84 ,  G03F7/20

Abstract: Disclosed is a method of determining a characteristic of interest, in particular focus, relating to a structure on a substrate formed by a lithographic process, and an associated patterning device and lithographic system. The method comprises forming a modified substrate feature on the substrate using a corresponding modified reticle feature on a patterning device, the modified substrate feature being formed for a primary function other than metrology, more specifically for providing a support for a vertically integrated structure. The modified reticle feature is such that said modified substrate feature is formed with a geometry dependent on the characteristic of interest during formation. The modified substrate feature can be measured to determine said characteristic of interest.