公开(公告)号：US20190171114A1

公开(公告)日：2019-06-06

申请号：US16192853

申请日：2018-11-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Frank STAALS ,  Eric Jos Anton Brouwer ,  Carlo Cornelis Maria Luijten ,  Jean-Pierre Agnes Henricus Marie Vaessen

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/956

Abstract: A focus metrology target includes one or more periodic arrays of features. A measurement of focus performance of a lithographic apparatus is based at least in part on diffraction signals obtained from the focus metrology target. Each periodic array of features includes a repeating arrangement of first zones interleaved with second zones, a feature density being different in the first zones and the second zones. Each first zone includes a repeating arrangement of first features. A minimum dimension of each first feature is close to but not less than a resolution limit of the printing by the lithographic apparatus, so as to comply with a design rule in a given a process environment. A region of high feature density may further include a repeating arrangement of larger features.

公开(公告)号：US11385554B2

公开(公告)日：2022-07-12

申请号：US16456878

申请日：2019-06-28

Applicant: ASML Netherlands B.V.

Inventor： Miguel Garcia Granda ,  Steven Erik Steen ,  Eric Jos Anton Brouwer ,  Bart Peter Bert Segers ,  Pierre-Yves Jerome Yvan Guittet ,  Frank Staals ,  Paulus Jacobus Maria Van Adrichem

IPC: G03F7/20 ,  G03F1/44 ,  G03F1/84

Abstract: Disclosed is a method of determining a characteristic of interest, in particular focus, relating to a structure on a substrate formed by a lithographic process, and an associated patterning device and lithographic system. The method comprises forming a modified substrate feature on the substrate using a corresponding modified reticle feature on a patterning device, the modified substrate feature being formed for a primary function other than metrology, more specifically for providing a support for a vertically integrated structure. The modified reticle feature is such that said modified substrate feature is formed with a geometry dependent on the characteristic of interest during formation. The modified substrate feature can be measured to determine said characteristic of interest.

公开(公告)号：US09964853B2

公开(公告)日：2018-05-08

申请号：US14648445

申请日：2013-11-22

Applicant: ASML Netherlands B.V.

Inventor： Peter Clement Paul Vanoppen ,  Eric Jos Anton Brouwer ,  Hugo Augustinus Joseph Cramer ,  Jan Hendrik Den Besten ,  Adrianus Franciscus Petrus Engelen ,  Paul Christiaan Hinnen

IPC: G03B27/52 ,  G03F7/20 ,  G01N21/47

CPC classification number: G03F7/70058 ,  G01N21/4738 ,  G03F7/70558 ,  G03F7/70625 ,  G03F7/70641 ,  G03F7/70683

Abstract: A method of determining exposure dose of a lithographic apparatus used in a lithographic process on a substrate. Using the lithographic process to produce a first structure on the substrate, the first structure having a dose-sensitive feature which has a form that depends on exposure dose of the lithographic apparatus on the substrate. Using the lithographic process to produce a second structure on the substrate, the second structure having a dose-sensitive feature which has a form that depends on the exposure dose of the lithographic apparatus but which has a different sensitivity to the exposure dose than the first structure. Detecting scattered radiation while illuminating the first and second structures with radiation to obtain first and second scatterometer signals. Using the first and second scatterometer signals to determine an exposure dose value used to produce at least one of the first and second structures.

公开(公告)号：US10895811B2

公开(公告)日：2021-01-19

申请号：US16599215

申请日：2019-10-11

Applicant: ASML Netherlands B.V.

Inventor： Miguel Garcia Granda ,  Elliott Gerard Mc Namara ,  Pierre-Yves Jerome Yvan Guittet ,  Eric Jos Anton Brouwer ,  Bart Peter Bert Segers

IPC: G03F7/20

Abstract: A lithographic apparatus prints a focus metrology pattern (T) on a substrate, the printed pattern including at least a first array of features (800). Features at any location within the array define a pattern that repeats at in at least a first direction of periodicity (X), while geometric parameters of the repeating pattern (w1, w3) vary over the array. A focus measurement is derived from measurements of the array at a selected subset of locations (ROI). As a result, the geometric parameters upon which the measurement of focus performance is based can be optimized by selection of locations within the array. The need to optimize geometric parameters of a target design on a reticle (MA) is reduced or eliminated. The measured property may be asymmetry, for example, and/or diffraction efficiency. The measured property for all locations may be captured by dark-field imaging, and a subset of locations selected after capture.

公开(公告)号：US10691030B2

公开(公告)日：2020-06-23

申请号：US16192853

申请日：2018-11-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Frank Staals ,  Eric Jos Anton Brouwer ,  Carlo Cornelius Maria Luijten ,  Jean-Pierre Agnes Henricus Marie Vaessen

IPC: G03F7/20 ,  G01N21/956 ,  G01N21/47

Abstract: A focus metrology target includes one or more periodic arrays of features. A measurement of focus performance of a lithographic apparatus is based at least in part on diffraction signals obtained from the focus metrology target. Each periodic array of features includes a repeating arrangement of first zones interleaved with second zones, a feature density being different in the first zones and the second zones. Each first zone includes a repeating arrangement of first features. A minimum dimension of each first feature is close to but not less than a resolution limit of the printing by the lithographic apparatus, so as to comply with a design rule in a given a process environment. A region of high feature density may further include a repeating arrangement of larger features.

公开(公告)号：US20150293458A1

公开(公告)日：2015-10-15

申请号：US14648445

申请日：2013-11-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Peter Clement Paul Vanoppen ,  Eric Jos Anton Brouwer ,  Hugo Augustinus Joseph Cramer ,  Jan Hendrik Den Besten ,  Adrianus Franciscus Petrus Engelen ,  Paul Christiaan Hinnen

IPC: G03F7/20 ,  G01N21/47

CPC classification number: G03F7/70058 ,  G01N21/4738 ,  G03F7/70558 ,  G03F7/70625 ,  G03F7/70641 ,  G03F7/70683

Abstract: A method of determining exposure dose of a lithographic apparatus used in a lithographic process on a substrate. Using the lithographic process to produce a first structure on the substrate, the first structure having a dose-sensitive feature which has a form that depends on exposure dose of the lithographic apparatus on the substrate. Using the lithographic process to produce a second structure on the substrate, the second structure having a dose-sensitive feature which has a form that depends on the exposure dose of the lithographic apparatus but which has a different sensitivity to the exposure dose than the first structure. Detecting scattered radiation while illuminating the first and second structures with radiation to obtain first and second scatterometer signals. Using the first and second scatterometer signals to determine an exposure dose value used to produce at least one of the first and second structures.

Abstract translation: 一种确定在光刻工艺中使用的光刻设备在衬底上的曝光剂量的方法。 使用光刻工艺在衬底上产生第一结构，第一结构具有剂量敏感特征，其具有取决于光刻设备在衬底上的曝光剂量的形式。 使用光刻工艺在衬底上产生第二结构，第二结构具有剂量敏感特征，其具有取决于光刻设备的曝光剂量但与第一结构具有不同于曝光剂量的灵敏度的形式 。 检测散射辐射，同时用辐射照射第一和第二结构，以获得第一和第二散射仪信号。 使用第一和第二散射仪信号来确定用于产生第一和第二结构中的至少一个的曝光剂量值。