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公开(公告)号：US20200233311A1
公开(公告)日：2020-07-23
申请号：US16076231
申请日：2017-02-16
Applicant: ASML NETHERLANDS B.V. , Lam Research Corporation
Inventor： Michael KUBIS , Marinus JOCHEMSEN , Richard Stephen WISE , Nader SHAMMA , Girish Anant DIXIT , Liesbeth REIJNEN , Ekaterina Mikhailovna VIATKINA , Melisa LUCA , Johannes Catharinus Hubertus MULKENS
Abstract: A method, and associated apparatus and computer program, to determine corrections for a parameter of interest, such as critical dimension, of a patterning process. The method includes determining an exposure control correction for an exposure control parameter and, optionally, determining a process control correction for a process control parameter, based upon a measurement of the parameter of interest of a structure, and an exposure control relationship and a process control relationship. The exposure control relationship describes the dependence of the parameter of interest on the exposure control parameter and the process control relationship describes the dependence of the parameter of interest on the process control parameter. The exposure control correction and process control correction may be co-optimized to minimize variation of the parameter of interest of subsequent exposed and processed structures relative to a target parameter of interest.
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公开(公告)号：US20240012337A1
公开(公告)日：2024-01-11
申请号：US18229984
申请日：2023-08-03
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo TEL , Mark John MASLOW , Koenraad VAN INGEN SCHENAU , Patrick WARNAAR , Abraham SLACHTER , Roy ANUNCIADO , Simon Hendrik Celine VAN GORP , Frank STAALS , Marinus JOCHEMSEN
CPC classification number: G03F7/70625 , G06T7/0004 , H01L22/20 , G06F30/20 , H01L21/00
Abstract: A method for determining a metric of a feature on a substrate obtained by a semiconductor manufacturing process involving a lithographic process, the method including: obtaining an image of at least part of the substrate, wherein the image includes at least the feature; determining a contour of the feature from the image; determining a plurality of segments of the contour; determining respective weights for each of the plurality of segments; determining, for each of the segments, an image-related metric; and determining the metric of the feature in dependence on the weights and the calculated image-related metric of each of the segments.
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公开(公告)号：US20200264522A1
公开(公告)日：2020-08-20
申请号：US16645672
申请日：2018-08-03
Applicant: ASML Netherlands B.V.
Inventor： Laurentius Cornelius DE WINTER , Roland Pieter STOLK , Frank STAALS , Anton Bernhard VAN OOSTEN , Paul Christiaan HINNEN , Marinus JOCHEMSEN , Thomas THEEUWES , Eelco VAN SETTEN
Abstract: Disclosed is a method of measuring focus performance of a lithographic apparatus, and corresponding patterning device and lithographic apparatus. The method comprises using the lithographic apparatus to print one or more first printed structures and second printed structures. The first printed structures are printed by illumination having a first non-telecentricity and the second printed structures being printed by illumination having a second non-telecentricity, different to said first non-telecentricity. A focus dependent parameter related to a focus-dependent positional shift between the first printed structures and the second printed structures on said substrate is measured and a measurement of focus performance based at least in part on the focus dependent parameter is derived therefrom.
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公开(公告)号：US20210149312A1
公开(公告)日：2021-05-20
申请号：US16644206
申请日：2018-08-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo TEL , Mark John MASLOW , Koenraad VAN INGEN SCHENAU , Patrick WARNAAR , Abraham SLACHTER , Roy ANUNCIADO , Simon Hendrik Celine VAN GORP , Frank STAALS , Marinus JOCHEMSEN
Abstract: A method for determining a metric of a feature on a substrate obtained by a semiconductor manufacturing process involving a lithographic process, the method including: obtaining an image of at least part of the substrate, wherein the image includes at least the feature; determining a contour of the feature from the image; determining a plurality of segments of the contour; determining respective weights for each of the plurality of segments; determining, for each of the segments, an image-related metric; and determining the metric of the feature in dependence on the weights and the calculated image-related metric of each of the segments.
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公开(公告)号：US20200249576A1
公开(公告)日：2020-08-06
申请号：US16635584
申请日：2018-07-11
Applicant: ASML NETHERLANDS B.V.
Inventor： Patrick WARNAAR , Patricius Aloysius Jacobus TINNEMANS , Grzegorz GRZELA , Everhardus Cornelis MOS , Wim Tjibbo TEL , Marinus JOCHEMSEN , Bart Peter Bert SEGERS , Frank STAALS
IPC: G03F7/20
Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.
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Patent Agency Ranking
公开(公告)号：US20190025705A1
公开(公告)日：2019-01-24
申请号：US16067303
申请日：2016-12-15
Applicant: ASML NETHERLANDS B.V.
Inventor： Hans VAN DER LAAN , Wim Tjibbo TEL , Marinus JOCHEMSEN , Stefan HUNSCHE
Abstract: Provided is a process of selecting a measurement location, the process including: obtaining pattern data describing a pattern to be applied to substrates in a patterning process; obtaining a process characteristic measured during or following processing of a substrate, the process characteristic characterizing the processing of the substrate; determining a simulated result of the patterning process based on the pattern data and the process characteristic; and selecting a measurement location for the substrate based on the simulated result.
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公开(公告)号：US20240410827A1
公开(公告)日：2024-12-12
申请号：US18704156
申请日：2022-10-10
Applicant: ASML Netherlands B.V.
Inventor： Diederik Jan MAAS , Wilhelmus Patrick Elisabeth Maria OP 'T ROOT , Marinus JOCHEMSEN , Hugo Augustinus Joseph CRAMER
Abstract: Disclosed is metrology apparatus for measurement of a diffractive structure on a substrate. comprising: a radiation source operable to provide first radiation for excitation of the diffractive structure, said first radiation having a first wavelength; a detection arrangement operable to detect at least diffracted second radiation comprising a second harmonic of said first radiation, said diffracted second radiation being generated from said diffractive structure and/or substrate and diffracted by said diffractive structure; and a processing arrangement operable to determine a parameter of interest relating to said diffractive structure from at least said diffracted second radiation.
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公开(公告)号：US20230333481A1
公开(公告)日：2023-10-19
申请号：US18207732
申请日：2023-06-09
Applicant: ASML NETHERLANDS B.V.
Inventor： Hans VAN DER LAAN , Wim Tjibbo TEL , Marinus JOCHEMSEN , Stefan HUNSCHE
IPC: G03F7/20 , G06F30/398 , H01L21/66
CPC classification number: G03F7/705 , G03F7/70616 , G06F30/398 , G03F7/70608 , G03F7/70625 , G03F7/7065 , H01L22/20 , H01L22/12
Abstract: A process of selecting a measurement location, the process including: obtaining pattern data describing a pattern to be applied to substrates in a patterning process; obtaining a process characteristic measured during or following processing of a substrate, the process characteristic characterizing the processing of the substrate; determining a simulated result of the patterning process based on the pattern data and the process characteristic; and selecting a measurement location for the substrate based on the simulated result.
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公开(公告)号：US20190147127A1
公开(公告)日：2019-05-16
申请号：US16300380
申请日：2017-04-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Jing SU , Yi ZOU , Chenxi LIN , Stefan HUNSCHE , Marinus JOCHEMSEN , Yen-Wen LU , Lin Lee CHEONG
Abstract: Methods of identifying a hot spot from a design layout or of predicting whether a pattern in a design layout is defective, using a machine learning model. An example method disclosed herein includes obtaining sets of one or more characteristics of performance of hot spots, respectively, under a plurality of process conditions, respectively, in a device manufacturing process; determining, for each of the process conditions, for each of the hot spots, based on the one or more characteristics under that process condition, whether that hot spot is defective; obtaining a characteristic of each of the process conditions; obtaining a characteristic of each of the hot spots; and training a machine learning model using a training set including the characteristic of one of the process conditions, the characteristic of one of the hot spots, and whether that hot spot is defective under that process condition.
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公开(公告)号：US20190146358A1
公开(公告)日：2019-05-16
申请号：US16300314
申请日：2017-04-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Marinus JOCHEMSEN , Scott Anderson MIDDLEBROOKS , Stefan HUNSCHE , Te-Sheng WANG
IPC: G03F7/20
Abstract: A method including obtaining an image of a plurality of structures on a substrate, wherein each of the plurality of structures is formed onto the substrate by transferring a corresponding pattern of a design layout; obtaining, from the image, a displacement for each of the structures with respect to a reference point for that structure; and assigning each of the structures into one of a plurality of groups based on the displacement.
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