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    SUBSTRATE EDGE RING THAT EXTENDS PROCESS ENVIRONMENT BEYOND SUBSTRATE DIAMETER
    1.
    发明申请
    SUBSTRATE EDGE RING THAT EXTENDS PROCESS ENVIRONMENT BEYOND SUBSTRATE DIAMETER 有权

    公开(公告)号：US20220293397A1

    公开(公告)日：2022-09-15

    申请号：US17198141

    申请日：2021-03-10

    Applicant: Applied Materials, Inc.

    Inventor： Michael R. RICE ,  Kenneth S. COLLINS ,  James David CARDUCCI ,  Shahid RAUF ,  Kartik RAMASWAMY

    IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

    Abstract: Embodiments of substrates supports for use in process chambers are provided herein. In some embodiments, a substrate support includes: a dielectric plate having a first side configured to support a substrate having a given diameter and including an annular groove disposed in the first side, wherein the annular groove has an inner diameter that is less than the given diameter and an outer diameter that is greater than the given diameter, wherein the dielectric plate includes a chucking electrode; an insert ring disposed in the annular groove of the dielectric plate; and an edge ring disposed on the dielectric plate, wherein the edge ring has an inner diameter that is greater than the given diameter and less than the outer diameter of the annular groove such that the edge ring is disposed over a portion of the insert ring.

    METHODS AND APPARATUS FOR ELECTRON BEAM ETCHING PROCESS
    2.
    发明申请
    METHODS AND APPARATUS FOR ELECTRON BEAM ETCHING PROCESS 审中-公开

    公开(公告)号：US20200006036A1

    公开(公告)日：2020-01-02

    申请号：US16391263

    申请日：2019-04-22

    Applicant: Applied Materials, Inc.

    Inventor： Yue GUO ,  Yang YANG ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Steven LANE ,  Gonzalo MONROY ,  Lucy Zhiping CHEN

    IPC: H01J37/305 ,  H01J37/32 ,  H01L21/3065

    Abstract: Embodiments described herein relate to apparatus and methods for performing electron beam etching process. In one embodiment, a method of etching a substrate includes delivering a process gas to a process volume of a process chamber, applying a RF power to an electrode formed from a high secondary electron emission coefficient material disposed in the process volume, generating a plasma comprising ions in the process volume, bombarding the electrode with the ions to cause the electrode to emit electrons and form an electron beam, applying a negative DC power to the electrode, accelerating electrons emitted from the bombarded electrode toward a substrate disposed in the process chamber, and etching the substrate with the accelerated ions.

    DISTRIBUTED ELECTRODE ARRAY FOR PLASMA PROCESSING
    3.
    发明申请
    DISTRIBUTED ELECTRODE ARRAY FOR PLASMA PROCESSING 审中-公开

    公开(公告)号：US20190057840A1

    公开(公告)日：2019-02-21

    申请号：US16107844

    申请日：2018-08-21

    Applicant: Applied Materials, Inc.

    Inventor： Kenneth S. COLLINS ,  Michael R. RICE ,  Kartik RAMASWAMY ,  James D. CARDUCCI ,  Yue GUO ,  Olga REGELMAN

    IPC: H01J37/32

    CPC classification number: H01J37/32174 ,  H01J37/3211 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32568

    Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.

    MULTIPLE ELECTRODE SUBSTRATE SUPPORT ASSEMBLY AND PHASE CONTROL SYSTEM
    7.
    发明申请
    MULTIPLE ELECTRODE SUBSTRATE SUPPORT ASSEMBLY AND PHASE CONTROL SYSTEM 审中-公开
    多电极基板支撑组件和相位控制系统

    公开(公告)号：US20160372307A1

    公开(公告)日：2016-12-22

    申请号：US14742142

    申请日：2015-06-17

    Applicant: Applied Materials, Inc.

    Inventor： YANG YANG ,  Kartik RAMASWAMY ,  Steven LANE ,  Lawrence WONG ,  Shahid RAUF ,  Andrew NGUYEN ,  Kenneth S. COLLINS ,  Roger Alan LINDLEY

    IPC: H01J37/32 ,  C23C14/48 ,  C23C16/458 ,  C23C16/505

    CPC classification number: H01J37/32715 ,  H01J37/32165 ,  H01J37/32568 ,  H01J37/3299

    Abstract: Implementations described herein provide a substrate support assembly which enables tuning of a plasma within a plasma chamber. In one embodiment, a method for tuning a plasma in a chamber is provided. The method includes providing a first radio frequency power and a direct current power to a first electrode in a substrate support assembly, providing a second radio frequency power to a second electrode in the substrate support assembly at a different location than the first electrode, monitoring parameters of the first and second radio frequency power, and adjusting one or both of the first and second radio frequency power based on the monitored parameters.

    Abstract translation: 本文所述的实施方案提供了能够调整等离子体室内的等离子体的衬底支撑组件。 在一个实施例中，提供了一种用于调谐腔室中的等离子体的方法。 该方法包括向衬底支撑组件中的第一电极提供第一射频功率和直流电力，在与第一电极不同的位置处向衬底支撑组件中的第二电极提供第二射频功率，监测参数 的第一和第二射频功率，并且基于所监视的参数来调整第一和第二射频功率中的一个或两个。

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