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    ELECTROSTATIC CHUCK FOR HIGH BIAS RADIO FREQUENCY (RF) POWER APPLICATION IN A PLASMA PROCESSING CHAMBER
    1.
    发明申请
    ELECTROSTATIC CHUCK FOR HIGH BIAS RADIO FREQUENCY (RF) POWER APPLICATION IN A PLASMA PROCESSING CHAMBER 审中-公开

    公开(公告)号：US20200286717A1

    公开(公告)日：2020-09-10

    申请号：US16406921

    申请日：2019-05-08

    Applicant: APPLIED MATERIALS, INC.

    Inventor： JAEYONG CHO ,  SHAHID RAUF ,  PENG TIAN

    IPC: H01J37/32 ,  H01L21/683

    Abstract: Embodiments of an electrostatic chuck are provided herein. In some embodiments, an electrostatic chuck for use in a substrate processing chamber includes a plate having a first side and a second side opposite the first side, a first electrode embedded in the plate proximate the first side, a second electrode embedded in the plate proximate the second side, a plurality of conductive elements coupling the first electrode to the second electrode, a first gas channel disposed within the plate and between the first electrode and the second electrode, a gas inlet extending from the second side of the plate to the first gas channel; and a plurality of gas outlets extending from the first side of the plate to the first gas channel.

    APPARATUS FOR CONTROLLING TEMPERATURE UNIFORMITY OF A SUBSTRATE
    2.
    发明申请
    APPARATUS FOR CONTROLLING TEMPERATURE UNIFORMITY OF A SUBSTRATE 审中-公开
    用于控制基板温度均匀性的装置

    公开(公告)号：US20160169593A1

    公开(公告)日：2016-06-16

    申请号：US15050419

    申请日：2016-02-22

    Applicant: APPLIED MATERIALS, INC.

    Inventor： KALLOL BERA ,  XIAOPING ZHOU ,  DOUGLAS A. BUCHBERGER, JR. ,  ANDREW NGUYEN ,  HAMID TAVASSOLI ,  SURAJIT KUMAR ,  SHAHID RAUF

    IPC: F28F3/12

    CPC classification number: F28F3/12 ,  F28F2013/001

    Abstract: Apparatus for controlling the thermal uniformity of a substrate are provided. The thermal uniformity of the substrate may be controlled to be more uniform or the thermal uniformity of the substrate may be controlled to be non-uniform in a desired pattern. In some embodiments, an apparatus for controlling the thermal uniformity of a substrate includes: a substrate support having a support surface to support a substrate thereon; and a flow path disposed within the substrate support to flow a heat transfer fluid beneath the support surface, wherein the flow path comprises a first portion and a second portion, each portion having a substantially equivalent axial length, wherein the first portion is spaced about 2 mm to about 10 mm from the second portion, and wherein the first portion provides a flow of heat transfer fluid in a direction opposite a flow of heat transfer fluid of the second portion.

    Abstract translation: 提供了用于控制基板的热均匀性的装置。 可以将基板的热均匀性控制得更均匀，或者基板的热均匀性可以被控制为在所需图案中不均匀。 在一些实施例中，用于控制衬底的热均匀性的装置包括：衬底支撑件，其具有用于在其上支撑衬底的支撑表面; 以及设置在所述基板支撑件内的流动路径，以使传热流体在所述支撑表面下方流动，其中所述流动路径包括第一部分和第二部分，每个部分具有基本相当的轴向长度，其中所述第一部分间隔开约2 从第二部分到约10mm，并且其中第一部分在与第二部分的传热流体的流动相反的方向上提供传热流体的流动。

    SYNCHRONIZED RADIO FREQUENCY PULSING FOR PLASMA ETCHING
    4.
    发明申请
    SYNCHRONIZED RADIO FREQUENCY PULSING FOR PLASMA ETCHING 有权
    用于等离子体蚀刻的同步无线电频率脉冲

    公开(公告)号：US20130213935A1

    公开(公告)日：2013-08-22

    申请号：US13849729

    申请日：2013-03-25

    Applicant: APPLIED MATERIALS, INC.

    Inventor： BRYAN LIAO ,  KATSUMASA KAWASAKI ,  YASHASWINI PATTAR ,  SERGIO FUKUDA SHOJI ,  DUY D. NGUYEN ,  KARTIK RAMASWAMY ,  ANKUR AGARWAL ,  PHILLIP STOUT ,  SHAHID RAUF

    IPC: C23F1/00

    CPC classification number: C23F1/00 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01L21/31116

    Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma.

    Abstract translation: 本文提供了处理基板的方法。 在一些实施例中，蚀刻介电层的方法包括通过脉冲具有第一占空比的第一RF源信号来产生等离子体; 向所述等离子体施加具有第二占空比的第二RF偏置信号; 向所述等离子体施加具有第三占空比的第三RF偏置信号，其中所述第一，第二和第三信号被同步; 调整所述第一RF源信号和所述第二或第三RF偏置信号中的至少一个之间的相位差，以控制所述等离子体中的等离子体或电荷积聚中的等离子体离子密度不均匀性中的至少一个; 并用等离子体蚀刻电介质层。

    PHOTORESIST TREATMENT METHOD BY LOW BOMBARDMENT PLASMA
    5.
    发明申请
    PHOTORESIST TREATMENT METHOD BY LOW BOMBARDMENT PLASMA 有权
    低比重等离子体的光电处理方法

    公开(公告)号：US20140370708A1

    公开(公告)日：2014-12-18

    申请号：US14301847

    申请日：2014-06-11

    Applicant: APPLIED MATERIALS, INC.

    Inventor： BANQIU WU ,  AJAY KUMAR ,  LEONID DORF ,  SHAHID RAUF ,  KARTIK RAMASWAMY ,  OMKARAM NALAMASU

    IPC: H01L21/308 ,  H01L21/3065

    CPC classification number: H01L21/31138 ,  G03F7/00 ,  G03F7/0035 ,  G03F7/004 ,  H01J37/32091 ,  H01J37/3233 ,  H01J37/3266 ,  H01L21/0273

    Abstract: Methods for reducing the line width roughness on a photoresist pattern are provided herein. In some embodiments, a method of processing a patterned photoresist layer disposed atop a substrate includes flowing a process gas into a processing volume of a process chamber having the substrate disposed therein; forming a plasma within the process chamber from the process gas, wherein the plasma has a ion energy of about 1 eV to about 10 eV; and etching the patterned photoresist layer with species from the plasma to at least one of smooth a line width roughness of a sidewall of the patterned photoresist layer or remove debris.

    Abstract translation: 本文提供了减少光致抗蚀剂图案上的线宽粗糙度的方法。 在一些实施例中，处理设置在基板顶上的图案化光致抗蚀剂层的方法包括将工艺气体流入其中布置有衬底的处理室的处理容积; 在所述处理室内从所述处理气体形成等离子体，其中所述等离子体具有约1eV至约10eV的离子能; 以及将来自等离子体的物质的图案化光致抗蚀剂层蚀刻成图案化光致抗蚀剂层的侧壁的线宽粗糙度的至少一个或去除碎屑。

    IN-SITU VHF CURRENT SENSOR FOR A PLASMA REACTOR
    8.
    发明申请
    IN-SITU VHF CURRENT SENSOR FOR A PLASMA REACTOR 有权
    用于等离子体反应器的现场甚高频电流传感器

    公开(公告)号：US20130320998A1

    公开(公告)日：2013-12-05

    申请号：US13944026

    申请日：2013-07-17

    Applicant: APPLIED MATERIALS, INC.

    Inventor： HIROJI HANAWA ,  SATORU KOBAYASHI ,  KARTIK RAMASWAMY ,  SHAHID RAUF

    IPC: G01R27/32

    CPC classification number: G01R27/32 ,  G01R19/0061 ,  H05H1/0081

    Abstract: An RF current probe is encapsulated in a conductive housing to permit its placement inside a plasma reactor chamber. An RF voltage probe is adapted to have a long coaxial cable to permit a measuring device to be connected remotely from the probe without distorting the voltage measurement.

    Abstract translation: RF电流探针被封装在导电壳体中以允许其放置在等离子体反应器室内。 RF电压探头适于具有长同轴电缆，以允许测量设备远离探头连接，而不会使电压测量失真。

    INDUCTIVELY COUPLED PLASMA APPARATUS
    10.
    发明申请
    INDUCTIVELY COUPLED PLASMA APPARATUS 审中-公开
    电感耦合等离子体装置

    公开(公告)号：US20130134129A1

    公开(公告)日：2013-05-30

    申请号：US13751229

    申请日：2013-01-28

    Applicant: Applied Materials, Inc.

    Inventor： VALENTIN N. TODOROW ,  SAMER BANNA ,  ANKUR AGARWAL ,  ZHIGANG CHEN ,  TSE-CHIANG WANG ,  ANDREW NGUYEN ,  MARTIN JEFF SALINAS ,  SHAHID RAUF

    IPC: C23C16/505 ,  B44C1/22

    CPC classification number: H01J37/321 ,  B44C1/227 ,  C23C16/505 ,  H01J37/32165 ,  H01J37/3244

    Abstract: Methods and apparatus for plasma processing are provided herein. In some embodiments, a plasma processing apparatus includes a process chamber having an interior processing volume; a first RF coil disposed proximate the process chamber to couple RF energy into the processing volume; and a second RF coil disposed proximate the process chamber to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil, wherein the first and second RF coils are configured such that RF current flowing through the first RF coil is out of phase with RF current flowing through the RF second coil.

    Abstract translation: 本文提供了等离子体处理的方法和装置。 在一些实施例中，等离子体处理装置包括具有内部处理量的处理室; 设置在所述处理室附近的将RF能量耦合到所述处理容积中的第一RF线圈; 以及设置在所述处理室附近以将RF能量耦合到所述处理容积中的第二RF线圈，所述第二RF线圈相对于所述第一RF线圈同轴设置，其中所述第一和第二RF线圈被配置为使得流过所述第一RF线圈的RF电流 RF线圈与RF电流流过RF第二线圈不同相。

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