公开(公告)号：US20170345623A1

公开(公告)日：2017-11-30

申请号：US15677929

申请日：2017-08-15

Applicant: Applied Materials, Inc.

Inventor： Andrew NGUYEN ,  Bradley HOWARD ,  Shahid RAUF ,  Ajit BALAKRISHNA ,  Tom K. CHOI ,  Kenneth S. COLLINS ,  Anand KUMAR ,  Michael D. WILLWERTH ,  Yogananda SARODE VISHWANATH

IPC: H01J37/32 ,  B29C65/00 ,  B32B1/02 ,  B01D45/08

Abstract: Embodiments of the present disclosure generally provide various apparatus and methods for reducing particles in a semiconductor processing chamber. One embodiment of present disclosure provides a vacuum screen assembly disposed over a vacuum port to prevent particles generated by the vacuum pump from entering substrate processing regions. Another embodiment of the present disclosure provides a perforated chamber liner around a processing region of the substrate. Another embodiment of the present disclosure provides a gas distributing chamber liner for distributing a cleaning gas around the substrate support under the substrate supporting surface.

公开(公告)号：US20140272211A1

公开(公告)日：2014-09-18

申请号：US14200077

申请日：2014-03-07

Applicant: Applied Materials, Inc.

Inventor： Andrew NGUYEN ,  Bradley HOWARD ,  Shahid RAUF ,  Ajit BALAKRISHNA ,  Tom K. CHO ,  Kenneth S. COLLINS ,  Anand KUMAR ,  Michael D. WILLWERTH ,  Yogananda S. VISHWANATH

IPC: H01J37/32 ,  B01D45/08

CPC classification number: H01J37/32495 ,  B01D45/08 ,  B29C66/71 ,  B32B1/02 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/32871 ,  Y10T428/13

Abstract: Embodiments of the present disclosure generally provide various apparatus and methods for reducing particles in a semiconductor processing chamber. One embodiment of present disclosure provides a vacuum screen assembly disposed over a vacuum port to prevent particles generated by the vacuum pump from entering substrate processing regions. Another embodiment of the present disclosure provides a perforated chamber liner around a processing region of the substrate. Another embodiment of the present disclosure provides a gas distributing chamber liner for distributing a cleaning gas around the substrate support under the substrate supporting surface.

Abstract translation: 本公开的实施例通常提供用于减少半导体处理室中的颗粒的各种装置和方法。 本公开的一个实施例提供一种设置在真空端口上的真空屏幕组件，以防止由真空泵产生的颗粒进入衬底处理区域。 本公开的另一个实施例提供围绕衬底的处理区域的穿孔室衬里。 本公开的另一个实施例提供一种气体分配室衬套，用于在衬底支撑表面下方的衬底支撑件周围分配清洁气体。

公开(公告)号：US20150056814A1

公开(公告)日：2015-02-26

申请号：US14059416

申请日：2013-10-21

Applicant: Applied Materials, Inc.

Inventor： Mang-Mang LING ,  Jungmin KO ,  Sean S. KANG ,  Jeremiah T. PENDER ,  Srinivas D. NEMANI ,  Bradley HOWARD

IPC: H01L21/3065 ,  H01L21/306 ,  H01L21/308

CPC classification number: H01L21/31116 ,  H01J2237/334 ,  H01L21/76802

Abstract: Methods for etching a material layer disposed on the substrate using a combination of a main etching step and a cyclical etching process are provided. The method includes performing a main etching process in a processing chamber to an oxide layer, forming a feature with a first predetermined depth in the oxide layer, performing a treatment process on the substrate by supplying a treatment gas mixture into the processing chamber to treat the etched feature in the oxide layer, performing a chemical etching process on the substrate by supplying a chemical etching gas mixture into the processing chamber, wherein the chemical etching gas includes at least an ammonium gas and a nitrogen trifluoride, wherein the chemical etching process further etches the feature to a second predetermined depth, and performing a transition process on the etched substrate by supplying a transition gas mixture into the processing chamber.

Abstract translation: 提供了使用主蚀刻步骤和循环蚀刻工艺的组合蚀刻设置在基板上的材料层的方法。 该方法包括在处理室中对氧化物层进行主蚀刻处理，在氧化物层中形成具有第一预定深度的特征，通过将处理气体混合物供应到处理室中来对衬底进行处理，以处理 在所述氧化物层中蚀刻特征，通过向所述处理室中提供化学蚀刻气体混合物，在所述基板上进行化学蚀刻处理，其中所述化学蚀刻气体至少包含铵气体和三氟化氮，其中所述化学蚀刻工艺进一步蚀刻 将特征提供到第二预定深度，并且通过将过渡气体混合物供应到处理室中来对蚀刻的基板执行转变处理。

公开(公告)号：US20150079798A1

公开(公告)日：2015-03-19

申请号：US14029769

申请日：2013-09-17

Applicant: Applied Materials, Inc.

Inventor： Mang-Mang LING ,  Sean S. KANG ,  Jeremiah T. P. PENDER ,  Srinivas D. NEMANI ,  Bradley HOWARD

IPC: H01L21/306

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J2237/334 ,  H01L21/76802 ,  H01L21/76826 ,  H01L21/76829

Abstract: Methods for etching an etching stop layer disposed on the substrate using a cyclical etching process are provided. In one embodiment, a method for etching an etching stop layer includes performing a treatment process on the substrate having a silicon nitride layer disposed thereon by supplying a treatment gas mixture into the processing chamber to treat the silicon nitride layer, and performing a chemical etching process on the substrate by supplying a chemical etching gas mixture into the processing chamber, wherein the chemical etching gas mixture includes at least an ammonium gas and a nitrogen trifluoride, wherein the chemical etching process etches the treated silicon nitride layer.

Abstract translation: 提供了使用循环蚀刻工艺蚀刻设置在基板上的蚀刻停止层的方法。 在一个实施例中，蚀刻停止层的蚀刻方法包括：通过将处理气体混合物供给到处理室中来对其上设置有氮化硅层的基板进行处理处理，以处理氮化硅层，并进行化学蚀刻工艺 在所述基板上通过向所述处理室供给化学蚀刻气体混合物，其中所述化学蚀刻气体混合物至少包含铵气体和三氟化氮，其中所述化学蚀刻工艺蚀刻所处理的氮化硅层。