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    IMMERSION FIELD GUIDED EXPOSURE AND POST-EXPOSURE BAKE PROCESS
    2.
    发明申请
    IMMERSION FIELD GUIDED EXPOSURE AND POST-EXPOSURE BAKE PROCESS 有权
    浸入场引导曝光和曝光后烘烤过程

    公开(公告)号：US20160357107A1

    公开(公告)日：2016-12-08

    申请号：US14733923

    申请日：2015-06-08

    Applicant: Applied Materials, Inc.

    Inventor： Douglas A. BUCHBERGER, JR. ,  Sang Ki NAM ,  Viachslav BABAYAN ,  Christine Y OUYANG ,  Ludovic GODET ,  Srinivas D. NEMANI

    IPC: G03F7/20

    CPC classification number: G03F7/0045 ,  G03F7/38 ,  G03F7/70 ,  G03F7/70866

    Abstract: Methods disclosed herein provide apparatus and method for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes. In one embodiment, an apparatus includes a processing chamber comprising a substrate support having a substrate supporting surface, a heat source embedded in the substrate support configured to heat a substrate positioned on the substrate supporting surface, an electrode assembly configured to generate an electric field in a direction substantially perpendicular to the substrate supporting surface, wherein the electrode assembly is positioned opposite the substrate supporting surface having a downward surface facing the substrate supporting surface, wherein the electrode assembly is spaced apart from substrate support defining a processing volume between the electrode assembly and the substrate supporting surface, and a confinement ring disposed on an edge of the substrate support or the electrode assembly configured to retain an intermediate medium.

    Abstract translation: 本文公开的方法提供了在光刻工艺期间没有气隙介入的情况下将电场和/或磁场施加到光致抗蚀剂层的装置和方法。 在一个实施例中，一种设备包括处理室，该处理室包括具有基板支撑表面的基板支撑件，嵌入在基板支撑件中的热源，该热源构造成加热位于基板支撑表面上的基板;电极组件， 基本上垂直于所述基板支撑表面的方向，其中所述电极组件与所述基板支撑表面相对定位，所述基板支撑表面具有面向所述基板支撑表面的向下表面，其中所述电极组件与限定所述电极组件和 衬底支撑表面以及设置在衬底支撑件的边缘上的限制环或被配置为保持中间介质的电极组件。

    APPARATUS FOR POST EXPOSURE BAKE OF PHOTORESIST
    3.
    发明申请
    APPARATUS FOR POST EXPOSURE BAKE OF PHOTORESIST 有权

    公开(公告)号：US20220269180A1

    公开(公告)日：2022-08-25

    申请号：US17668080

    申请日：2022-02-09

    Applicant: Applied Materials, Inc.

    Inventor： Douglas A. BUCHBERGER, JR. ,  Dmitry LUBOMIRSKY ,  John O. DUKOVIC ,  Srinivas D. NEMANI

    IPC: G03F7/38

    Abstract: A method and apparatus for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes is provided herein. The method and apparatus include a transfer device and a plurality of modules. The transfer device is configured to rotate a plurality of substrates between each of the modules, wherein one module includes a heating pedestal and another module includes a cooling pedestal. One module is utilized for inserting and removing the substrates from the system. At least the heating module is able to be sealed and filled with a process volume before applying the electric field.

    HEATED SHOWERHEAD ASSEMBLY
    5.
    发明申请
    HEATED SHOWERHEAD ASSEMBLY 有权
    加热淋浴组件

    公开(公告)号：US20150053794A1

    公开(公告)日：2015-02-26

    申请号：US14531831

    申请日：2014-11-03

    Applicant: APPLIED MATERIALS, INC.

    Inventor： James D. CARDUCCI ,  Olga REGELMAN ,  Kallol BERA ,  Douglas A. BUCHBERGER, JR. ,  Paul BRILLHART

    IPC: H01J37/32 ,  B32B43/00

    CPC classification number: H01J37/3244 ,  B32B43/00 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45591 ,  H01J37/32449 ,  H01J37/32724 ,  H01J2237/3343 ,  Y10T29/49815

    Abstract: The present disclosure generally comprises a heated showerhead assembly that may be used to supply processing gases into a processing chamber. The processing chamber may be an etching chamber. When processing gas is evacuated from the processing chamber, the uniform processing of the substrate may be difficult. As the processing gas is pulled away from the substrate and towards the vacuum pump, the plasma, in the case of etching, may not be uniform across the substrate. Uneven plasma may lead to uneven etching. To prevent uneven etching, the showerhead assembly may be separated into two zones each having independently controllable gas introduction and temperature control. The first zone corresponds to the perimeter of the substrate while the second zone corresponds to the center of the substrate. By independently controlling the temperature and the gas flow through the showerhead zones, etching uniformity of the substrate may be increased.

    Abstract translation: 本公开通常包括可用于将处理气体供应到处理室中的加热喷头组件。 处理室可以是蚀刻室。 当处理气体从处理室排出时，衬底的均匀处理可能是困难的。 当处理气体从衬底被拉离并且朝向真空泵时，在蚀刻的情况下，等离子体在衬底上可能不均匀。 不均匀的等离子体可能导致不均匀的蚀刻。 为了防止不均匀的蚀刻，喷头组件可以分成两个区域，每个区域具有独立可控的气体引入和温度控制。 第一区域对应于衬底的周边，而第二区域对应于衬底的中心。 通过独立地控制温度和通过喷头区域的气体流动，可以增加基板的蚀刻均匀性。

    APPARATUS FOR POST EXPOSURE BAKE OF PHOTORESIST
    6.
    发明申请
    APPARATUS FOR POST EXPOSURE BAKE OF PHOTORESIST 有权

    公开(公告)号：US20220199414A1

    公开(公告)日：2022-06-23

    申请号：US17126797

    申请日：2020-12-18

    Applicant: Applied Materials, Inc.

    Inventor： Douglas A. BUCHBERGER, JR. ,  Dmitry LUBOMIRSKY ,  John O. DUKOVIC ,  Srinivas D. NEMANI

    IPC: H01L21/308 ,  H01L21/67 ,  G03F7/20

    Abstract: A method and apparatus for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes is provided herein. The method and apparatus include a chamber body, which is configured to be filled with a process fluid, and a substrate carrier. The substrate carrier is disposed outside of the process volume while substrates are loaded onto the substrate carrier, but is rotated to a processing position either simultaneously or before entering the process fluid. The substrate carrier is rotated to a process position parallel to an electrode before an electric field is utilized to perform a post-exposure bake process on the substrate.

    CHAMBER AND METHODS OF TREATING A SUBSTRATE AFTER EXPOSURE TO RADIATION
    10.
    发明申请
    CHAMBER AND METHODS OF TREATING A SUBSTRATE AFTER EXPOSURE TO RADIATION 有权

    公开(公告)号：US20220350251A1

    公开(公告)日：2022-11-03

    申请号：US17531108

    申请日：2021-11-19

    Applicant: Applied Materials, Inc.

    Inventor： Dmitry LUBOMIRSKY ,  Douglas A. BUCHBERGER, JR. ,  Qiwei LIANG ,  Hyunjun KIM ,  Ellie Y. YIEH

    IPC: G03F7/38 ,  H01J37/32

    Abstract: A method and apparatus for performing post-exposure bake operations is described herein. The apparatus includes a plate stack and enables formation of a first high ion density plasma before the ion concentration within the first high ion density plasma is reduced using a diffuser to form a second low ion density plasma. The second low ion density plasma is an electron cloud or a dark plasma. An electric field is formed between a substrate support and the diffuser and through the second low ion density plasma during post-exposure bake of a substrate disposed on the substrate support. The second low ion density plasma electrically couples the substrate support and the diffuser during application of the electric field. The plate stack is equipped with power supplies and insulators to enable the formation or modification of a plasma within three regions of a process chamber.

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