公开(公告)号：US20190057841A1

公开(公告)日：2019-02-21

申请号：US16107855

申请日：2018-08-21

Applicant: Applied Materials, Inc.

Inventor： Kenneth S. COLLINS ,  Michael R. RICE ,  Kartik RAMASWAMY ,  James D. CARDUCCI ,  Yue GUO ,  Olga REGELMAN

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/3211 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32568

Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.

公开(公告)号：US20190287765A1

公开(公告)日：2019-09-19

申请号：US16432930

申请日：2019-06-06

Applicant: Applied Materials, Inc.

Inventor： Kenneth S. COLLINS ,  Michael R. RICE ,  Kartik RAMASWAMY ,  James D. CARDUCCI ,  Yue GUO ,  Olga REGELMAN

IPC: H01J37/32

Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.

公开(公告)号：US20190051496A1

公开(公告)日：2019-02-14

申请号：US16059608

申请日：2018-08-09

Applicant: Applied Materials, Inc.

Inventor： Kenneth S. COLLINS ,  Michael R. RICE ,  Kartik RAMASWAMY ,  James D. CARDUCCI ,  Yue GUO ,  Olga REGELMAN

IPC: H01J37/32

Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.

公开(公告)号：US20190057840A1

公开(公告)日：2019-02-21

申请号：US16107844

申请日：2018-08-21

Applicant: Applied Materials, Inc.

Inventor： Kenneth S. COLLINS ,  Michael R. RICE ,  Kartik RAMASWAMY ,  James D. CARDUCCI ,  Yue GUO ,  Olga REGELMAN

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/3211 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32568

Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.

公开(公告)号：US20150053794A1

公开(公告)日：2015-02-26

申请号：US14531831

申请日：2014-11-03

Applicant: APPLIED MATERIALS, INC.

Inventor： James D. CARDUCCI ,  Olga REGELMAN ,  Kallol BERA ,  Douglas A. BUCHBERGER, JR. ,  Paul BRILLHART

IPC: H01J37/32 ,  B32B43/00

CPC classification number: H01J37/3244 ,  B32B43/00 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45591 ,  H01J37/32449 ,  H01J37/32724 ,  H01J2237/3343 ,  Y10T29/49815

Abstract: The present disclosure generally comprises a heated showerhead assembly that may be used to supply processing gases into a processing chamber. The processing chamber may be an etching chamber. When processing gas is evacuated from the processing chamber, the uniform processing of the substrate may be difficult. As the processing gas is pulled away from the substrate and towards the vacuum pump, the plasma, in the case of etching, may not be uniform across the substrate. Uneven plasma may lead to uneven etching. To prevent uneven etching, the showerhead assembly may be separated into two zones each having independently controllable gas introduction and temperature control. The first zone corresponds to the perimeter of the substrate while the second zone corresponds to the center of the substrate. By independently controlling the temperature and the gas flow through the showerhead zones, etching uniformity of the substrate may be increased.

Abstract translation: 本公开通常包括可用于将处理气体供应到处理室中的加热喷头组件。 处理室可以是蚀刻室。 当处理气体从处理室排出时，衬底的均匀处理可能是困难的。 当处理气体从衬底被拉离并且朝向真空泵时，在蚀刻的情况下，等离子体在衬底上可能不均匀。 不均匀的等离子体可能导致不均匀的蚀刻。 为了防止不均匀的蚀刻，喷头组件可以分成两个区域，每个区域具有独立可控的气体引入和温度控制。 第一区域对应于衬底的周边，而第二区域对应于衬底的中心。 通过独立地控制温度和通过喷头区域的气体流动，可以增加基板的蚀刻均匀性。