公开(公告)号：US20230078862A1

公开(公告)日：2023-03-16

申请号：US17473834

申请日：2021-09-13

申请人： Amkor Technology Singapore Holding Pte. Ltd.

发明人： Sang Yun MA ,  Dong Hee KANG ,  Sang Hyoun LEE

IPC分类号： H01L23/055 ,  H01L23/10 ,  H01L23/42 ,  H01L23/498

摘要： In one example, a semiconductor device includes a first substrate with a first substrate top side, a first substrate bottom side opposite to the first substrate top side, a first substrate lateral side interposed between the first substrate top side and the first substrate bottom side, and a first substrate conductive structure. An electronic component is coupled to the first substrate top side and coupled to the first substrate conductive structure. A support includes a support wall having a first ledge coupled to the first substrate top side, a first riser coupled to the first substrate lateral side, and a second ledge extending from the first riser away from the first substrate lateral side. Other examples and related methods are also disclosed herein.

公开(公告)号：US20240332272A1

公开(公告)日：2024-10-03

申请号：US18190885

申请日：2023-03-27

申请人： AMKOR TECHNOLOGY SINGAPORE HOLDING PTE. LTD.

发明人： Sang Yun MA ,  Dong Hee KANG

IPC分类号： H01L25/16 ,  H01L23/13 ,  H01L23/367 ,  H01L23/552

CPC分类号： H01L25/165 ,  H01L23/13 ,  H01L23/3675 ,  H01L23/552 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/73 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13184 ,  H01L2224/16227 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/0132 ,  H01L2924/0665 ,  H01L2924/069 ,  H01L2924/0695 ,  H01L2924/07025 ,  H01L2924/0715

摘要： In one example, an electronic device includes a substrate with a substrate first side; a substrate second side opposite to the substrate first side, a substrate lateral side connecting the substrate first side to the substrate second side, a dielectric structure, and a conductive structure. A substrate dock includes a substrate dock base at the substrate first side and a first substrate dock sidewall extending upward from the substrate dock base. The substrate dock base and the first substrate dock sidewall define a substrate dock cavity. A cover structure includes a cover sidewall with a cover sidewall lower side. An interface material couples the cover sidewall to the substrate dock. An electronic component is coupled to the conductive structure. Other examples and related methods are also disclosed herein.