公开(公告)号：US20190210911A1

公开(公告)日：2019-07-11

申请号：US16351007

申请日：2019-03-12

Applicant: AGC Inc.

Inventor： Kazutaka ONO ,  Shuhei Nomura ,  Nobutaka Kidera ,  Nobuhiko Takeshita

IPC: C03C3/118 ,  C03B17/06 ,  C03C13/04 ,  C03B17/02 ,  H05K1/02

CPC classification number: C03C3/118 ,  C03B17/02 ,  C03B17/064 ,  C03C3/078 ,  C03C3/083 ,  C03C3/089 ,  C03C3/091 ,  C03C4/16 ,  C03C13/046 ,  C03C19/00 ,  H05K1/024 ,  H05K1/03

Abstract: The present invention relates to a glass substrate for a high-frequency device, which includes SiO2 as a main component, the glass substrate having a total content of alkali metal oxides in the range of 0.001-5% in terms of mole percent on the basis of oxides, the alkali metal oxides having a molar ratio represented by Na2O/(Na2O+K2O) in the range of 0.01-0.99, and the glass substrate having a total content of Al2O3 and B2O3 in the range of 1-40% in terms of mole percent on the basis of oxides and having a molar ratio represented by Al2O3/(Al2O3+B2O3) in the range of 0-0.45, in which at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

公开(公告)号：US20210366760A1

公开(公告)日：2021-11-25

申请号：US17398107

申请日：2021-08-10

Applicant: AGC Inc.

Inventor： Yu Hanawa ,  Shuhei Nomura ,  Kazutaka Ono ,  Nobuhiko Takeshita ,  Keisuke Hanashima

IPC: H01L21/687 ,  C03B33/02 ,  B65D85/48 ,  H01L21/67 ,  G05B1/00 ,  H01L23/544 ,  C03C27/10 ,  B32B17/10 ,  C03B33/023 ,  H01L21/56

Abstract: A glass substrate is laminated with a substrate containing silicon to thereby form a laminated substrate. The glass substrate has a concave surface and a convex surface and has one or more marks that distinguish between the concave surface and the convex surface.

公开(公告)号：US11133215B2

公开(公告)日：2021-09-28

申请号：US15877509

申请日：2018-01-23

Applicant: AGC Inc.

Inventor： Yu Hanawa ,  Shuhei Nomura ,  Kazutaka Ono ,  Nobuhiko Takeshita ,  Keisuke Hanashima

IPC: H01L21/56 ,  H01L21/687 ,  C03B33/023 ,  H01L23/15 ,  H01L23/00 ,  B32B17/00 ,  B65D85/48 ,  C03B33/02 ,  H01L21/67 ,  G05B1/00 ,  H01L23/544 ,  C03C27/10 ,  B32B17/10

Abstract: A glass substrate is laminated with a substrate containing silicon to thereby form a laminated substrate. The glass substrate has a concave surface and a convex surface and has one or more marks that distinguish between the concave surface and the convex surface.

公开(公告)号：US12037283B2

公开(公告)日：2024-07-16

申请号：US17174615

申请日：2021-02-12

Applicant: AGC Inc.

Inventor： Kazutaka Ono ,  Shuhei Nomura ,  Nobutaka Kidera ,  Nobuhiko Takeshita

IPC: C03C3/089 ,  C03C3/091 ,  C03C4/16 ,  H05K1/02 ,  H05K1/03 ,  C03B17/02 ,  C03B17/06 ,  C03B19/14 ,  C03B25/08 ,  C03C3/06 ,  C03C3/087 ,  C03C3/118 ,  C03C13/04

CPC classification number: C03C3/089 ,  C03C3/091 ,  C03C4/16 ,  H05K1/024 ,  H05K1/03 ,  C03B17/02 ,  C03B17/064 ,  C03B19/14 ,  C03B25/08 ,  C03C3/06 ,  C03C3/087 ,  C03C3/118 ,  C03C13/046 ,  C03C2204/08 ,  C03C2217/253

Abstract: A glass substrate for a high-frequency device, which contains, in terms of mole percent on the basis of oxides: 40 to 75% of SiO2; 0 to 15% of Al2O3; 13 to 23% of B2O3; 2.5 to 11% of MgO; and 0 to 13% of CaO, and having a total content of alkali metal oxides in the range of 0.001-5%, where at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

公开(公告)号：US11715673B2

公开(公告)日：2023-08-01

申请号：US17367762

申请日：2021-07-06

Applicant: AGC Inc.

Inventor： Yu Hanawa ,  Shigeki Sawamura ,  Shuhei Nomura ,  Kazutaka Ono ,  Nobuhiko Takeshita ,  Keisuke Hanashima

IPC: B32B17/06 ,  H01L23/15 ,  C03C27/04 ,  C03C3/085 ,  C03C3/087 ,  C03C3/091 ,  C03C3/093 ,  B32B1/00 ,  B32B9/00 ,  C03C17/22 ,  H01L23/13

CPC classification number: H01L23/15 ,  B32B1/00 ,  B32B9/005 ,  B32B17/06 ,  C03C3/085 ,  C03C3/087 ,  C03C3/091 ,  C03C3/093 ,  C03C17/22 ,  C03C27/04 ,  H01L23/13 ,  B32B2307/30 ,  B32B2457/14

Abstract: The present invention provides a glass substrate in which in a step of sticking a glass substrate and a silicon-containing substrate to each other, bubbles hardly intrude therebetween. The present invention relates to a glass substrate for forming a laminated substrate by lamination with a silicon-containing substrate, having a warpage of 2 μm to 300 μm, and an inclination angle due to the warpage of 0.0004° to 0.12°.

公开(公告)号：US10974987B2

公开(公告)日：2021-04-13

申请号：US16351007

申请日：2019-03-12

Applicant: AGC Inc.

Inventor： Kazutaka Ono ,  Shuhei Nomura ,  Nobutaka Kidera ,  Nobuhiko Takeshita

IPC: C03C3/089 ,  C03C3/091 ,  C03B25/08 ,  C03B19/14 ,  C03C4/16 ,  H05K1/03 ,  C03B17/02 ,  C03B17/06 ,  H05K1/02 ,  C03C3/06 ,  C03C3/087 ,  C03C3/118 ,  C03C13/04

Abstract: The present invention relates to a glass substrate for a high-frequency device, which includes SiO2 as a main component, the glass substrate having a total content of alkali metal oxides in the range of 0.001-5% in terms of mole percent on the basis of oxides, the alkali metal oxides having a molar ratio represented by Na2O/(Na2O+K2O) in the range of 0.01-0.99, and the glass substrate having a total content of Al2O3 and B2O3 in the range of 1-40% in terms of mole percent on the basis of oxides and having a molar ratio represented by Al2O3/(Al2O3+B2O3) in the range of 0-0.45, in which at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

公开(公告)号：US11969857B2

公开(公告)日：2024-04-30

申请号：US17969012

申请日：2022-10-19

Applicant: AGC Inc.

Inventor： Toru Momose ,  Osamu Sato ,  Hirofumi Yamamoto ,  Nobuhiko Takeshita

IPC: B32B3/26 ,  B24B37/08 ,  B24B37/28

CPC classification number: B24B37/08 ,  B24B37/28

Abstract: A method of producing a glass article includes holding a carrier having a circular shape, in which a glass substrate having a circular shape is retained, with an upper surface plate and a lower surface plate; and polishing the glass substrate by rotating the carrier with respect to the upper surface plate and the lower surface plate, to obtain the glass article. The glass substrate is disposed in the carrier such that, in a top plan view, a center of the carrier is included in a region of the glass substrate, and a center of the glass substrate is shifted from the center of the carrier.

公开(公告)号：US11708294B2

公开(公告)日：2023-07-25

申请号：US16720979

申请日：2019-12-19

Applicant: AGC Inc.

Inventor： Kazutaka Ono ,  Shuhei Nomura ,  Nobutaka Kidera ,  Nobuhiko Takeshita

IPC: C03C3/089 ,  C03C4/16 ,  H05K1/03 ,  C03C3/091 ,  H05K1/02 ,  C03B25/08 ,  C03C3/06 ,  C03B19/14 ,  C03C3/087 ,  C03B17/02 ,  C03B17/06 ,  C03C3/118 ,  C03C13/04

CPC classification number: C03C3/089 ,  C03C3/091 ,  C03C4/16 ,  H05K1/024 ,  H05K1/03 ,  C03B17/02 ,  C03B17/064 ,  C03B19/14 ,  C03B25/08 ,  C03C3/06 ,  C03C3/087 ,  C03C3/118 ,  C03C13/046 ,  C03C2204/08 ,  C03C2217/253

Abstract: A glass substrate for a high-frequency device, which contains SiO2 as a main component, the glass substrate having a total content of alkali metal oxides in the range of 0.001-5% in terms of mole percent on the basis of oxides, the alkali metal oxides having a molar ratio represented by Na2O/(Na2O+K2O) in the range of 0.01-0.99, and the glass substrate having a total content of alkaline earth metal oxides in the range of 0.1-13% in terms of mole percent on the basis of oxides, wherein at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

公开(公告)号：US11114356B2

公开(公告)日：2021-09-07

申请号：US16555702

申请日：2019-08-29

Applicant: AGC Inc.

Inventor： Yu Hanawa ,  Shigeki Sawamura ,  Shuhei Nomura ,  Kazutaka Ono ,  Nobuhiko Takeshita ,  Keisuke Hanashima

IPC: B32B15/04 ,  H01L23/15 ,  C03C27/04 ,  C03C3/085 ,  C03C3/087 ,  C03C3/091 ,  C03C3/093 ,  C03C17/22 ,  H01L23/13

Abstract: The present invention provides a glass substrate in which in a step of sticking a glass substrate and a silicon-containing substrate to each other, bubbles hardly intrude therebetween. The present invention relates to a glass substrate for forming a laminated substrate by lamination with a silicon-containing substrate, having a warpage of 2 μm to 300 μm, and an inclination angle due to the warpage of 0.0004° to 0.12°.

公开(公告)号：US10515864B2

公开(公告)日：2019-12-24

申请号：US15822859

申请日：2017-11-27

Applicant: AGC Inc.

Inventor： Yu Hanawa ,  Shigeki Sawamura ,  Shuhei Nomura ,  Kazutaka Ono ,  Nobuhiko Takeshita ,  Keisuke Hanashima

IPC: B32B15/04 ,  B32B17/06 ,  H01L23/15 ,  C03C17/22 ,  H01L23/13

Abstract: The present invention provides a glass substrate in which in a step of sticking a glass substrate and a silicon-containing substrate to each other, bubbles hardly intrude therebetween. The present invention relates to a glass substrate for forming a laminated substrate by lamination with a silicon-containing substrate, having a warpage of 2 μm to 300 μm, and an inclination angle due to the warpage of 0.0004° to 0.12°.