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公开(公告)号：US20230216867A1
公开(公告)日：2023-07-06
申请号：US18000639
申请日：2020-09-29
发明人： Kean LIU , Jing SHANG , Shaolong XU , Jun TANG , Yu WANG , Jun YANG , Yan XIONG , Guotao JIANG , Fan JIANG , Qing XU , Siyuan LI , Qinyang LUO
IPC分类号： H04L9/40
CPC分类号： H04L63/1416 , H04L63/1425 , H04L63/1458
摘要： The invention relates to an information security protection method and apparatus, and a computer-readable storage medium. The information security protection method comprises the steps of: allocating a train control and monitoring system to an intranet region, and performing region boundary security protection on the train control and monitoring system; performing communication network security protection on the train control and monitoring system; and performing terminal device security protection on the train control and monitoring system. The invention deeply integrates an application service of a train control and monitoring system, and defence-in-depth is performed on the train control and monitoring system from a plurality of dimensions such as region boundary security, communication network security and terminal device security, such that attacks initiated from an intranet and an extranet of the system can be effectively handled, and thus, the information security protection capability of the train control and monitoring system is improved.
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公开(公告)号：US11325477B2
公开(公告)日：2022-05-10
申请号：US16764974
申请日：2018-11-08
发明人： Wenye Yuan , Xinjian Chen , Chaolu Chen , Lujun Zhang , Yong Liu , Lingjun Hu
IPC分类号： B60L7/14 , H02P3/18 , H02P27/06 , B60L1/00 , B60L53/20 , B60L55/00 , B60L7/22 , B60L7/16 , B60L50/60
摘要： An electrical brake energy feedback system, including a rectifier and inverter circuit, an intermediate DC circuit, a first voltage detection circuit configured to detect voltages of positive and negative terminals of the intermediate DC circuit to obtain a first voltage signal, a bidirectional DC/DC conversion circuit and/or a regeneration control circuit, and an electrical energy flow control circuit for controlling operating states of the bidirectional DC/DC conversion circuit and/or the regeneration control circuit according to the first voltage signal. With this system, the electrical brake energy can be recovered to the greatest extent when the vehicle is running in different zones, and the electrical brake energy consumed by the brake resistor is as little as possible. Accordingly, the vehicle and the entire transportation system can be more energy-saving and environmentally friendly.
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公开(公告)号：US20210167042A1
公开(公告)日：2021-06-03
申请号：US17258577
申请日：2018-07-11
发明人： Robin Adam SIMPSON
摘要： We disclose herein a semiconductor device sub-assembly comprising a plurality of semiconductor units of a first type, a plurality of semiconductor units of a second type; a plurality of conductive blocks operatively coupled with the plurality of semiconductor units, a conductive malleable layer operatively coupled with the plurality of conductive blocks, wherein the plurality of conductive blocks are located between the conductive malleable layer and the plurality of semiconductor units. In use, at least some of the plurality of conductive blocks are configured to apply a pressure on the conductive malleable layer, when a predetermined pressure is applied to the semiconductor device sub-assembly. At least one semiconductor unit of a second type is configured to withstand an applied pressure greater than a threshold pressure.
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公开(公告)号：US10661666B2
公开(公告)日：2020-05-26
申请号：US15580690
申请日：2016-06-28
发明人： Wenguang Chen , Jianghua Feng , Xiong Liu , Chaolu Chen , Hua Xiao , Junfeng Xu , Huishui Peng , Peijin Xie , Yuanji Lu , Wenye Yuan , Long Wang
摘要： A method for tractive force distribution for a power-distributed train is provided, which includes: determining a current motor car of a target train; acquiring parameter information of the current motor car; calculating, based on the parameter information, axle load transfer at four axles of the current motor car; calculating, based on the axle load transfer at the four axles of the current motor car, current axle loads on the four axles of the current motor car; and performing, based on the current axle loads on the four axles, distribution of tractive forces of the four axles of the current motor car using an electrical control compensation technology.
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公开(公告)号：US20190013383A1
公开(公告)日：2019-01-10
申请号：US15759102
申请日：2015-09-10
申请人： INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES , ZHUZHOU CRRC TIMES ELECTRIC CO., LTD.
发明人： Yidan TANG , Huajun SHEN , Yun BAI , Jingtao ZHOU , Chengyue YANG , Xinyu LIU , Chengzhan LI , Guoyou LIU
IPC分类号： H01L29/16 , H01L29/08 , H01L29/06 , H01L29/78 , H01L29/417 , H01L29/423 , H01L29/66 , H01L21/02 , H01L21/04 , H01L21/324 , H01L27/092
摘要： The present disclosure discloses a self-aligned silicon carbide MOSFET device with an optimized P+ region and a manufacturing method thereof. The self-aligned silicon carbide MOSFET device is formed by a plurality of silicon carbide MOSFET device cells connected in parallel, and these silicon carbide MOSFET device cells are arranged evenly. The silicon carbide MOSFET device cell comprises two source electrodes, one gate electrode, one gate oxide layer, two N+ source regions, two P+ contact regions, two P wells, one N- drift layer, one buffer layer, one N+ substrate, one drain electrode and one isolation dielectric layer. By optimizing the P+ region, the present disclosure forms a good source ohmic contact, reduces the on-resistance, and also shorts the source electrode and the P well to prevent the parasitic transistor effect of the parasitic NPN and PiN, which may take both conduction characteristics and the breakdown characteristics of the device into consideration, and may be applied to a high voltage, high frequency silicon carbide MOSFET device. The self-aligned manufacturing method used in the present disclosure simplifies the process, controls a size of a channel accurately, and may produce a lateral and vertical power MOSFET.
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公开(公告)号：US11898932B2
公开(公告)日：2024-02-13
申请号：US17261886
申请日：2019-09-03
发明人： Wenlong Zhu , Yong Liu , Jisheng Dai , Zongshuai Li , Jiawei Yang , Ping Jiang , Yanhao Zhan , Zhongjing Zhang , Hailong Xu
IPC分类号： G01R19/00 , G01M13/045 , G01R23/16 , G01R31/34 , G06F18/214
CPC分类号： G01M13/045 , G01R19/0092 , G01R23/16 , G01R31/34 , G06F18/2148 , G06F2218/02 , G06F2218/10 , G06F2218/12
摘要： A device for diagnosing a fault in a bearing of a motor is provided. If the device operates in a fault diagnosis mode, a current signal acquisition unit acquires a real-time current signal of the motor, a residual signal acquisition unit extracts harmonic signals from the real-time current signal of the motor acquired by the current signal acquisition unit and remove a fundamental signal and a harmonic signal from the real-time current signal of the motor to acquire a residual signal, a fault feature extraction unit analyzes the residual signal in both time domain and frequency domain to extract a fault feature index of the bearing, and a fault diagnosis model unit performs, by using a bearing fault diagnosis model obtained through training, pattern recognition on the fault feature index to diagnose a fault state of the bearing.
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公开(公告)号：US20230335625A1
公开(公告)日：2023-10-19
申请号：US18009677
申请日：2021-03-31
发明人： Chunlin Zhu , Guoyou Liu
IPC分类号： H01L29/739 , H01L29/78 , H01L29/06 , H01L27/06 , H01L29/66
CPC分类号： H01L29/7397 , H01L29/7813 , H01L29/0696 , H01L27/0623 , H01L29/66348 , H01L29/66734 , H01L29/7827
摘要： There is provided a power semiconductor device (1), comprising: a semiconductor substrate (2) comprising: a base layer (5) selectively provided at a first side of the semiconductor substrate, and wherein the base layer has a first conductivity type; a collector layer (3) provided at a second side of the semiconductor substrate, wherein the second side is opposite to the first side, and wherein the collector layer has the first conductivity type; and a drift layer (4) having a second conductivity type opposite to the first conductivity type, wherein the drift layer (4) is arranged between the collector layer (3) and the base layer (5); an active cell (15) provided in the semiconductor substrate (2), wherein the active cell (15) comprises an emitter region (7) which has the second conductivity type and an active base region (5-i) which is a part of the base layer (5); and an insulation trench (17) provided in the semiconductor substrate (2) and neighbouring the active cell (15), wherein: the insulation trench (17) extends from a surface (16) of the semiconductor substrate (2) at the first side into the drift layer (4) along a first direction; the insulation trench (17) comprises a gate electrode (9) and a dielectric material (11, 10) disposed therein; and the gate electrode (9) is configured to control an on/off status of a current channel within the active cell (15); wherein the active cell (15) has a first length L1 along a second direction X perpendicular to the first direction Y, and the insulation trench (17) has a second length L2 along the second direction X, and the first and second lengths L1 and L2 satisfy the relationship of 0.5≤L2/L1≤2.
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公开(公告)号：US11569371B2
公开(公告)日：2023-01-31
申请号：US16615900
申请日：2017-05-25
IPC分类号： H01L29/739 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/66 , H01L21/762
摘要： We disclose herein a gate controlled bipolar semiconductor device comprising: a collector region of a first conductivity type; a drift region of a second conductivity type located over the collector region; a body region of a first conductivity type located over the drift region; a plurality of first contact regions of a second conductivity type located above the body region and having a higher doping concentration than the body region; a second contact region of a first conductivity type located laterally adjacent to the plurality of first contact regions, the second contact region having a higher doping concentration than the body region; at least two active trenches each extending from a surface into the drift region; an emitter trench extending from the surface into the drift region; wherein each first contact region adjoins an active trench so that, in use, a channel is formed along said each active trench and within the body region; wherein the second contact region adjoins the emitter trench; and wherein the emitter trench is located between two active trenches.
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公开(公告)号：US20210286995A1
公开(公告)日：2021-09-16
申请号：US17261886
申请日：2019-09-03
发明人： Wenlong ZHU , Yong LIU , Jisheng DAI , Zongshuai LI , Jiawei YANG , Ping JIANG , Yanhao ZHAN , Zhongjing ZHANG , Hailong XU
摘要： A device for diagnosing a fault in a bearing of a motor is provided. If the device operates in a fault diagnosis mode, a current signal acquisition unit acquires a real-time current signal of the motor, a residual signal acquisition unit extracts harmonic signals from the real-time current signal of the motor acquired by the current signal acquisition unit and remove a fundamental signal and a harmonic signal from the real-time current signal of the motor to acquire a residual signal, a fault feature extraction unit analyzes the residual signal in both time domain and frequency domain to extract a fault feature index of the bearing, and a fault diagnosis model unit performs, by using a bearing fault diagnosis model obtained through training, pattern recognition on the fault feature index to diagnose a fault state of the bearing.
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公开(公告)号：US20210257355A1
公开(公告)日：2021-08-19
申请号：US17251264
申请日：2018-06-13
发明人： Chunlin ZHU , Vinay SURESH , Ian DEVINY , Yangang WANG
IPC分类号： H01L27/06 , H01L23/34 , H01L27/02 , H01L29/739 , H01L29/66 , H01L29/78 , H01L29/732 , H01L29/74 , H01L21/762
摘要： We describe herein a high voltage semiconductor device comprising a power semiconductor device portion (100) and a temperature sensing device portion (185). The temperature sensing device portion comprises: an anode region (140), a cathode region (150), a body region (160) in which the anode region and the cathode region are formed. The temperature sensing device portion also comprises a semiconductor isolation region (165) in which the body region is formed, the semiconductor isolation region having an opposite conductivity type to the body region, the semiconductor isolation region being formed between the power semiconductor device portion and the temperature sensing device portion.
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