公开(公告)号：US09885439B2

公开(公告)日：2018-02-06

申请号：US13143125

申请日：2010-01-08

Applicant: Shigeyuki Joh ,  Yusuke Saito

Inventor： Shigeyuki Joh ,  Yusuke Saito

IPC: F16L27/00 ,  F16L41/10 ,  F16L41/00

CPC classification number: F16L41/10 ,  F16L41/007 ,  F16L2201/10

Abstract: In a pipe joint, a tapered male screw thread is provided at one end and a joint connection section which is connected to a joint section is provided at the other end. The tapered male screw thread has a length adapted so that, when the tapered male screw thread has been fastened to a tapered female screw thread formed in an end cap, the entire length is engaged with the tapered female screw thread, and the sealing effect is obtained by a seal member.

公开(公告)号：US09731322B2

公开(公告)日：2017-08-15

申请号：US13881431

申请日：2011-08-24

Applicant: Takashi Tanaka ,  Yusuke Saito ,  Mitsuaki Iwashita ,  Takayuki Toshima

Inventor： Takashi Tanaka ,  Yusuke Saito ,  Mitsuaki Iwashita ,  Takayuki Toshima

IPC: B05D7/00 ,  B05B12/04 ,  B05B12/14 ,  B05D1/02 ,  C25D17/00 ,  C23C18/16 ,  C23C18/31 ,  C23C18/54

CPC classification number: B05D7/50 ,  B05B12/04 ,  B05B12/14 ,  B05D1/02 ,  C23C18/1632 ,  C23C18/1651 ,  C23C18/31 ,  C23C18/54 ,  C25D17/001

Abstract: A plating apparatus 1 can perform plating processes by supplying plating liquids onto a surface of a substrate 2. The plating apparatus 1 includes a substrate rotating holder configured to hold and rotate the substrate 2; plating liquid supply units 29 and 30 configured to supply different kinds of plating liquids onto the surface of the substrate 2; a plating liquid drain unit 31 configured to drain out the plating liquids dispersed from the substrate 2 depending on the kinds of the plating liquids; and a controller 32 configured to control the substrate rotating holder 25, the plating liquid supply units 29 and 30, the plating liquid drain unit 31. While the substrate 2 is held and rotated, the plating processes are performed on the surface of the substrate 2 in sequence by supplying the different kinds of the plating liquids onto the surface of the substrate 2.

公开(公告)号：US08206785B2

公开(公告)日：2012-06-26

申请号：US12405597

申请日：2009-03-17

Applicant: Takayuki Toshima ,  Mitsuaki Iwashita ,  Takashi Tanaka ,  Yusuke Saito

Inventor： Takayuki Toshima ,  Mitsuaki Iwashita ,  Takashi Tanaka ,  Yusuke Saito

IPC: B05D1/36 ,  B05D5/00 ,  B05D1/12

CPC classification number: H01L21/288 ,  C23C18/1628 ,  C23C18/1669 ,  H01L21/6715 ,  H01L21/76849

Abstract: A cap metal forming method capable of obtaining a uniform film thickness on the entire surface of a substrate is provided. The method for forming a cap metal on a copper wiring formed on a processing target surface of a substrate includes: holding the substrate so as to be rotatable; rotating the substrate in a processing target surface direction of the substrate; locating an end portion of an agitation member so as to face the processing target surface of a periphery portion of the substrate with a preset gap maintained therebetween; supplying a plating processing solution onto the processing target surface; and stopping the supply of the plating processing solution and moving the agitation member such that the end portion of the agitation member is separated away from the processing target surface of the substrate.

Abstract translation: 提供能够在基板的整个表面上获得均匀的膜厚度的盖金属成形方法。 在形成在基板的加工对象面上的铜布线上形成盖金属的方法包括：保持基板以可旋转; 在所述基板的处理对象面方向上旋转所述基板; 将搅拌构件的端部定位成面对保持在其间的预设间隙的基板的周边部分的处理目标表面; 将电镀处理液供给到所述加工对象面上; 停止电镀处理液的供给，使搅拌部件移动，使搅拌部件的端部与基板的加工对象面分离。

公开(公告)号：US20070107751A1

公开(公告)日：2007-05-17

申请号：US10581729

申请日：2004-12-16

Applicant: Yoshichika Tokuno ,  Norihiro Ito ,  Takehiko Orii ,  Mitsunori Nakamori ,  Tadashi Iino ,  Hiroki Ohno ,  Yusuke Saito

Inventor： Yoshichika Tokuno ,  Norihiro Ito ,  Takehiko Orii ,  Mitsunori Nakamori ,  Tadashi Iino ,  Hiroki Ohno ,  Yusuke Saito

IPC: B08B7/04 ,  C23G1/00 ,  B08B3/00

CPC classification number: H01L21/68721 ,  B01D53/002 ,  B01D2257/106 ,  C01B13/10 ,  H01L21/6715 ,  H01L21/68742 ,  H01L21/68785

Abstract: Water vapor is mixed to O3 gas generated by an ozone generator of discharge type. The mixed fluid is cooled by a cooler, thereby impurities such as metals and nitrogen oxides contained in the O3 gas dissolve into condensed water. Subsequently, a gas-liquid separator separates the O3 gas from the condensed water. Water vapor is mixed with the O3 gas again. The mixed fluid passes through a metal trap composed of a container containing plural silicon chips as a metal adsorbent, thereby to remove the remaining metals therefrom.

Abstract translation: 将水蒸汽与由放电型臭氧发生器产生的O 3气体混合。 混合流体由冷却器冷却，由此含有的O 3 3气体中的杂质如金属和氮氧化物溶解在冷凝水中。 随后，气液分离器从冷凝水中分离出O 3 N 3气体。 水蒸汽再次与O 3 3气体混合。 混合流体通过金属捕集器，该金属捕集器由含有多个硅芯片的容器组成，作为金属吸附剂，从而从其中除去剩余的金属。

公开(公告)号：US20070074747A1

公开(公告)日：2007-04-05

申请号：US10579423

申请日：2004-12-07

Applicant: Takayuki Toshima ,  Tadashi Iino ,  Yusuke Saito ,  Mitsunori Nakamori ,  Noritaka Uchida ,  Takehiko Orii

Inventor： Takayuki Toshima ,  Tadashi Iino ,  Yusuke Saito ,  Mitsunori Nakamori ,  Noritaka Uchida ,  Takehiko Orii

IPC: B08B3/00

CPC classification number: G03F7/427 ,  H01L21/31138

Abstract: A substrate processing method which removes an ArF resist film from a wafer having the ArF resist film. As an ultraviolet irradiation process is performed on the ArF resist film, and then an ozone gas and water vapor are fed to the ArF resist film, the ArF resist film is altered in a water-soluble state. Thereafter, the ArF resist film is removed from the substrate by feeding pure water to the ArF resist film altered into the water-soluble state.

Abstract translation: 从具有ArF抗蚀剂膜的晶片去除ArF抗蚀剂膜的基板处理方法。 由于在ArF抗蚀剂膜上进行紫外线照射处理，然后向ArF抗蚀剂膜供给臭氧气体和水蒸汽，所以ArF抗蚀剂膜变为水溶性状态。 此后，通过将纯水供给到改变成水溶性状态的ArF抗蚀剂膜，从基板除去ArF抗蚀剂膜。

公开(公告)号：US06608217B2

公开(公告)日：2003-08-19

申请号：US10255099

申请日：2002-09-26

Applicant: Takeo Komata ,  Masaki Fujiwara ,  Takanao Tarui ,  Yusuke Saito ,  Hiroshi Minesaki

Inventor： Takeo Komata ,  Masaki Fujiwara ,  Takanao Tarui ,  Yusuke Saito ,  Hiroshi Minesaki

IPC: C07D31104

CPC classification number: C07D311/58 ,  C07C45/46 ,  C07C45/673 ,  C07C49/84 ,  C07C49/825

Abstract: The present invention relates to a first process for producing a 2,2-bis(fluoromethyl)-6-(perfluoroalkyl)-2H-1-benzopyran-4-carboxylic acid. The first process includes the steps of (a) reacting a 2,2-bis(fluoromethyl)-6-(perfluoroalkyl)-2H-1-benzopyran-4-one with a perfluoroalkanesulfonic acid anhydride in the presence of a base, thereby obtaining a perfluoroalkanesulfonic 2,2-bis(fluoromethyl)-6-(perfluoroalkyl)-2H- 1-benzopyran-4-yl ester; and (b) reacting the benzopyranyl ester with carbon monoxide in the presence of a palladium complex compound and a base, thereby obtaining the carboxylic acid. The present invention further relates to a second process for producing a 2-hydroxy-5-(perfluoroalkyl) acetophenone, which can be a raw material for producing the carboxylic acid. The second process includes the steps of (c) reacting a 4-(perfluoroalkyl)alkoxybenzene with acetic anhydride or an acyl halide in the presence of a Lewis acid, thereby obtaining a 2-alkoxy-5-(perfluoroalkyl)acetophenone; and (d) dealkylating the 2-alkoxy-5-(perfluoroalkyl) acetophenone by a dealkylating agent.

Abstract translation: 本发明涉及生产2,2-双（氟甲基）-6-（全氟烷基）-2H-1-苯并吡喃-4-羧酸的第一种方法。 第一种方法包括以下步骤：（a）在碱的存在下使2,2-双（氟甲基）-6-（全氟烷基）-2H-1-苯并吡喃-4-酮与全氟烷基磺酸酐反应，从而得到 全氟烷基磺酸2,2-双（氟甲基）-6-（全氟烷基）-2H-苯并吡喃-4-基酯; 和（b）在钯络合物和碱的存在下使苯并吡喃基酯与一氧化碳反应，由此得到羧酸。 本发明还涉及可用作生产羧酸的原料的2-羟基-5-（全氟烷基）苯乙酮的制备方法。 第二种方法包括以下步骤：（c）在路易斯酸存在下使4-（全氟烷基）烷氧基苯与乙酸酐或酰卤反应，由此得到2-烷氧基-5-（全氟烷基）苯乙酮; 和（d）通过脱烷基化剂使2-烷氧基-5-（全氟烷基）苯乙酮脱烷基化。

公开(公告)号：US06400018B2

公开(公告)日：2002-06-04

申请号：US09141217

申请日：1998-08-27

Applicant: William J. Clatanoff ,  Gayle R. T. Schueller ,  Robert J. Schubert ,  Yusuke Saito ,  Hideo Yamazaki ,  Hideaki Yasui

Inventor： William J. Clatanoff ,  Gayle R. T. Schueller ,  Robert J. Schubert ,  Yusuke Saito ,  Hideo Yamazaki ,  Hideaki Yasui

IPC: H01L2348

CPC classification number: H01L24/32 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/4985 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/05599 ,  H01L2224/16237 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H05K3/3436 ,  H05K3/363 ,  H05K3/4007 ,  H05K2201/0367 ,  H05K2201/0394 ,  H05K2201/09472 ,  H05K2201/09563 ,  H05K2201/09827 ,  H05K2201/10681 ,  H05K2201/10734 ,  Y02P70/613 ,  H01L2924/00012 ,  H01L2224/29099 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

Abstract: A circuit includes a substrate having a dielectric layer with a first surface and a second surface. A conductive layer is formed on the first surface. A beveled via is formed in a dielectric layer of the substrate. The via has a first opening of a first width in the first surface, and a second opening of a second width in the second surface, the second width being greater than the first width. A conductive plug is connected to the conductive layer. The plug is formed in the via and extends from adjacent the first opening toward the second opening, and terminates adjacent the second opening at a plug interface surface. A conductive solder ball is connected to the plug interface surface and extends to protrude from the second surface.

公开(公告)号：US20160123250A1

公开(公告)日：2016-05-05

申请号：US14892655

申请日：2013-05-24

Applicant: Yosuke MATSUMOTO ,  Satoru TANAKA ,  Satoshi YOSHIZAKI ,  Yusuke SAITO ,  Naoya TAKAGI ,  Noriyasu ADACHI ,  Ryutaro MORIGUCHI

Inventor： Yosuke MATSUMOTO ,  Satoru TANAKA ,  Satoshi YOSHIZAKI ,  Yusuke SAITO ,  Naoya TAKAGI ,  Noriyasu ADACHI ,  Ryutaro MORIGUCHI

IPC: F02D37/02 ,  F02D41/10 ,  F02D41/30 ,  F02D41/04 ,  F02P9/00 ,  F02D41/00

CPC classification number: F02D37/02 ,  F02B37/18 ,  F02D11/105 ,  F02D41/0002 ,  F02D41/0007 ,  F02D41/045 ,  F02D41/107 ,  F02D41/1475 ,  F02D41/3005 ,  F02D41/3023 ,  F02P5/1504 ,  F02P9/002 ,  Y02T10/144 ,  Y02T10/42 ,  Y02T10/46

Abstract: A target air amount for achieving a requested torque is back-calculated from the requested torque using a virtual air-fuel ratio. The virtual air-fuel ratio is changed from a first air-fuel ratio to a second air-fuel ratio in response to a condition for switching an operation mode from operation in the first air-fuel ratio to operation in the second air-fuel ratio being satisfied. After the virtual air-fuel ratio is changed from the first air-fuel ratio to the second air-fuel ratio, the target air-fuel ratio is changed in accordance with an air-fuel ratio efficiency within the range from the first air-fuel ratio to the second air-fuel ratio. The air-fuel ratio efficiency is calculated based on a proportion of the requested torque relative to a torque that can be achieved by means of a current estimated air amount under the theoretical air-fuel ratio and the optimal ignition timing.

Abstract translation: 使用虚拟空燃比，根据所要求的扭矩来回复用于实现要求转矩的目标空气量。 响应于将操作模式从第一空燃比中的操作切换到在第二空燃比中的操作的条件，虚拟空燃比从第一空燃比变为第二空燃比 满意 在虚拟空燃比从第一空燃比变为第二空燃比之后，目标空燃比根据第一空燃比的范围内的空燃比效率而变化 与第二空燃比的比率。 基于理论空燃比和最佳点火正时之间的相对于通过当前估计空气量可以实现的转矩的要求转矩的比例来计算空燃比效率。

公开(公告)号：US20150159546A1

公开(公告)日：2015-06-11

申请号：US14413900

申请日：2012-07-12

Applicant: Yoshihiro Sakayanagi ,  Akira Eiraku ,  Satoru Tanaka ,  Yusuke Saito ,  Shinichi Soejima

Inventor： Yoshihiro Sakayanagi ,  Akira Eiraku ,  Satoru Tanaka ,  Yusuke Saito ,  Shinichi Soejima

IPC: F02B37/22 ,  F02D41/00

CPC classification number: F02B37/22 ,  F02B37/18 ,  F02D11/105 ,  F02D41/0007 ,  F02D41/107 ,  F02D41/18 ,  F02D2041/1409 ,  F02D2041/141 ,  F02D2200/0402 ,  F02D2200/0406 ,  F02D2200/703 ,  Y02T10/144

Abstract: An object of the present invention is to improve controllability over a supercharging pressure in a transient state, in a control device of an internal combustion engine equipped with a turbo supercharger that determines a manipulated variable of an actuator which acts on a rotational speed of a turbine by feedback control based on a deviation between a target state quantity and an actual state quantity. To this end, a control device according to the present invention determines an opening degree of a throttle by feedforward control based on a target intake air amount, and determines a manipulated variable of the actuator by feedback control based on a deviation between a target intake pressure determined from the target intake air amount and an actual intake pressure.

Abstract translation: 本发明的一个目的是在装备有涡轮增压器的内燃机的控制装置中提高在过渡状态下的增压压力的可控性，所述涡轮增压器确定作用在涡轮机转速上的致动器的操纵变量 通过基于目标状态量与实际状态量之间的偏差的反馈控制。 为此，根据本发明的控制装置通过基于目标进气量的前馈控制来确定节气门的开度，并且通过基于目标进气压力之间的偏差的反馈控制来确定致动器的操作变量 从目标进气量和实际进气压力确定。

公开(公告)号：US08960074B2

公开(公告)日：2015-02-24

申请号：US13042785

申请日：2011-03-08

Applicant: Koji Hara ,  Yusuke Saito ,  Toshio Sato ,  Hironobu Imamura

Inventor： Koji Hara ,  Yusuke Saito ,  Toshio Sato ,  Hironobu Imamura

IPC: B65D45/16 ,  F15B15/14

CPC classification number: F15B15/1438 ,  F15B15/1404 ,  F15B15/1471 ,  Y10T29/49826 ,  Y10T29/49938

Abstract: A pair of penetrating holes are formed along a longitudinal direction in the interior of a cylinder body that constitutes a fluid pressure cylinder. One end of the pair of penetrating holes is sealed by a pair of caps formed in plate-like shapes. The caps, for example, are formed by press molding a plate body made up from a metal material such as aluminum or the like. Outer edge portions of the caps include bent portions, which are inclined at a predetermined angle in a radial outward direction. In addition, the caps are installed by means of the bent portions biting into inner circumferential surfaces of the penetrating holes.

Abstract translation: 在构成流体压力缸的缸体的内部沿着长度方向形成有一对贯通孔。 一对穿透孔的一端由形成为板状的一对盖子密封。 盖子例如通过由诸如铝等的金属材料制成的板体压制成型而形成。 盖的外缘部分包括在径向向外的方向上以预定角度倾斜的弯曲部分。 此外，通过咬入到穿透孔的内周面的弯曲部分来安装盖。