公开(公告)号：US20130065402A1

公开(公告)日：2013-03-14

申请号：US13616872

申请日：2012-09-14

申请人： Kenji Kameda ,  Yuji Urano

发明人： Kenji Kameda ,  Yuji Urano

IPC分类号： B08B9/08 ,  H01L21/02 ,  C23C16/56

CPC分类号： B08B9/08 ,  C23C16/4405 ,  C23C16/56 ,  H01L21/02104

摘要： A method of cleaning an inside of a processing chamber is provided according to an embodiment of the present disclosure. The method includes supplying a fluorine-based gas and a nitrogen oxide-based gas as the cleaning gas, into the processing chamber heated to a first temperature, and removing a deposit by a thermochemical reaction. The method further includes changing a temperature in the processing chamber to a second temperature higher than the first temperature, and supplying the fluorine-based gas and the nitrogen oxide-based gas as the cleaning gas, and removing extraneous materials, remaining on the surface of the member in the processing chamber, by a thermochemical reaction.

摘要翻译： 根据本公开的实施例提供了一种清洁处理室内部的方法。 该方法包括将氟基气体和氮氧化物基气体作为清洗气体供入加热至第一温度的处理室中，并通过热化学反应除去沉积物。 该方法还包括将处理室中的温度改变到高于第一温度的第二温度，并且供应氟基气体和氮氧化物基气体作为清洁气体，并除去留在表面上的外来材料 处理室中的成员，通过热化学反应。

公开(公告)号：US08304328B2

公开(公告)日：2012-11-06

申请号：US12223718

申请日：2007-03-15

申请人： Takahiro Maeda ,  Kiyohiko Maeda ,  Takashi Ozaki ,  Akihito Yoshino ,  Yasunobu Koshi ,  Yuji Urano

发明人： Takahiro Maeda ,  Kiyohiko Maeda ,  Takashi Ozaki ,  Akihito Yoshino ,  Yasunobu Koshi ,  Yuji Urano

IPC分类号： H01L21/00

CPC分类号： H01L21/30 ,  C23C16/345 ,  C23C16/4405 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/52 ,  H01L21/3185

摘要： To realize a high productivity while maintaining excellent film deposition characteristics on a substrate even if a plurality of processing gases of different gas species are used. There are provided the step of loading a plurality of substrates into a processing chamber; supplying a first processing gas to an upper stream side of a gas flow outside of a region where a plurality of substrates loaded into a processing chamber are arranged, supplying a second processing gas to the upper stream side of the gas flow outside of the region where the plurality of substrates loaded into the processing chamber are arranged, supplying the first processing gas to a middle part of the gas flow in the region where the plurality of substrates loaded into the processing chamber are arranged, and causing the first processing gas and the second processing gas to react with each other in the processing chamber, to form an amorphous material and form a thin film on main surfaces of the plurality of substrates; and the step of unloading the substrate after forming the thin film from the processing camber.

摘要翻译： 为了实现高生产率，同时在使用不同气体种类的多种处理气体的同时在基板上保持优异的成膜特性。 提供了将多个基板装载到处理室中的步骤; 将第一处理气体供给到其中布置有多个基板的区域外的气流的上游侧，将第二处理气体供给到所述气流的上游侧， 布置了装载到处理室中的多个基板，将第一处理气体供给到布置有加载到处理室中的多个基板的区域中的气流的中间部分，并且使第一处理气体和第二处理气体 处理气体在处理室中彼此反应，以形成非晶材料并在多个基板的主表面上形成薄膜; 以及在从所述加工弯度形成所述薄膜之后卸载所述基板的步骤。

公开(公告)号：US20090149032A1

公开(公告)日：2009-06-11

申请号：US12292995

申请日：2008-12-02

申请人： Kenji Kameda ,  Jie Wang ,  Yuji Urano

发明人： Kenji Kameda ,  Jie Wang ,  Yuji Urano

IPC分类号： H01L21/321 ,  B05C11/00 ,  H01L21/02

CPC分类号： C23C16/4405

摘要： The present invention suppresses metallic contamination in a processing chamber and a breakage of a quartz member, while suppressing decrease in film formation rate in a thin film formation process immediately after dry cleaning of the inside of the processing chamber, and enhances the operation rate of a apparatus. The method according to the invention includes the steps of: removing the thin film on the inside of the processing chamber by supplying a fluorine gas solely or a fluorine gas diluted by an inert gas solely, as the cleaning gas, to the inside of the processing chamber heated to a first temperature; and removing an adhered material remaining on the inside of the processing chamber after removing the thin film by supplying a fluorine gas solely or a fluorine gas diluted by an inert gas solely, as the cleaning gas, to the inside of the processing chamber heated to a second temperature.

摘要翻译： 本发明抑制处理室中的金属污染和石英部件的破损，同时在干燥清洁处理室之后立即在薄膜形成过程中抑制成膜速率的降低，并且提高了 仪器。 根据本发明的方法包括以下步骤：通过仅将单独的氟气或仅由惰性气体稀释的氟气作为清洁气体来除去处理室内部的薄膜到处理的内部 室加热至第一温度; 并且通过仅将单独的氟气或仅由惰性气体稀释的氟气作为清洁气体除去薄膜而除去残留在处理室内部的粘附材料到加热到 第二温度。

公开(公告)号：US06707249B2

公开(公告)日：2004-03-16

申请号：US09942404

申请日：2001-08-30

申请人： Tadatsugu Minami ,  Toshihiro Miyata ,  Toshiaki Ueno ,  Yuji Urano

发明人： Tadatsugu Minami ,  Toshihiro Miyata ,  Toshiaki Ueno ,  Yuji Urano

IPC分类号： H01J3100

CPC分类号： C09K11/7769 ,  C09K11/7701 ,  C09K11/7707 ,  C09K11/7708 ,  C09K11/7775 ,  C09K11/7776 ,  H05B33/14

摘要： The present invention provides an oxide phosphor for use in an electroluminescent device, which phosphor is capable of providing a high-luminance EL device while the composition thereof is controlled to be as simple as possible, and which phosphor attains multi-color and full-color light emissions without the need for treatment at a high temperature greatly in excess of 1,000° C. The invention also provides an electroluminescent device employing the phosphor. The oxide phosphor for use in an electroluminescent device is formed from an yttrium (Y) oxide as a matrix and at least one transition metal element as an activator, or from a Y—Ge—O oxide or a Y—Ge—Si—O oxide as a matrix and at least one metallic element, as a luminescence center, selected from among transition metal elements and rare earth metal elements.

摘要翻译： 本发明提供一种用于电致发光器件的氧化物荧光体，该荧光体能够提供高亮度EL器件，同时将其组成控制到尽可能简单，并且该荧光体达到多色和全色 发光，而不需要在高于1000℃的高温下进行处理。本发明还提供一种采用该荧光体的电致发光器件。 用于电致发光器件的氧化物荧光体由作为基体的氧化钇（Y）和作为活化剂的至少一种过渡金属元素或Y-Ge-O氧化物或Y-Ge-Si-O 氧化物作为基质和至少一种金属元素，作为发光中心，选自过渡金属元素和稀土金属元素。

公开(公告)号：US08741783B2

公开(公告)日：2014-06-03

申请号：US13616872

申请日：2012-09-14

申请人： Kenji Kameda ,  Yuji Urano

发明人： Kenji Kameda ,  Yuji Urano

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： B08B9/08 ,  C23C16/4405 ,  C23C16/56 ,  H01L21/02104

摘要： A method of cleaning an inside of a processing chamber is provided according to an embodiment of the present disclosure. The method includes supplying a fluorine-based gas and a nitrogen oxide-based gas as the cleaning gas, into the processing chamber heated to a first temperature, and removing a deposit by a thermochemical reaction. The method further includes changing a temperature in the processing chamber to a second temperature higher than the first temperature, and supplying the fluorine-based gas and the nitrogen oxide-based gas as the cleaning gas, and removing extraneous materials, remaining on the surface of the member in the processing chamber, by a thermochemical reaction.

摘要翻译： 根据本公开的实施例提供了一种清洁处理室内部的方法。 该方法包括将氟基气体和氮氧化物基气体作为清洗气体供入加热至第一温度的处理室中，并通过热化学反应除去沉积物。 该方法还包括将处理室中的温度改变到高于第一温度的第二温度，并且供应氟基气体和氮氧化物基气体作为清洁气体，并除去留在表面上的外来材料 处理室中的成员，通过热化学反应。

公开(公告)号：US09856560B2

公开(公告)日：2018-01-02

申请号：US12379471

申请日：2009-02-23

申请人： Kenji Kameda ,  Jie Wang ,  Yuji Urano

发明人： Kenji Kameda ,  Jie Wang ,  Yuji Urano

IPC分类号： H01L21/311 ,  C23C16/44

CPC分类号： C23C16/4405

摘要： The method according to the invention includes the steps of: purging an inside of the processing chamber with gas while applying a thermal impact onto the thin film deposited on the inside of the processing chamber by decreasing the temperature in the processing chamber, so as to forcibly generate a crack in the thin film and forcibly peel the adhered material with a weak adhesive force, in a state where the substrate is not present in the processing chamber; removing the thin film deposited on the inside of the processing chamber by supplying a fluorine-based gas to the inside of the processing chamber heated to a first temperature, in the state where the substrate is not present in the processing chamber; and removing an adhered material remaining on the inside of the processing chamber after removing the thin film by supplying a fluorine-based gas to the inside of the processing chamber heated to a second temperature, in the state where the substrate is not present in the processing chamber.

公开(公告)号：US20090170328A1

公开(公告)日：2009-07-02

申请号：US12379471

申请日：2009-02-23

申请人： Kenji Kameda ,  Jie Wang ,  Yuji Urano

发明人： Kenji Kameda ,  Jie Wang ,  Yuji Urano

IPC分类号： H01L21/311

CPC分类号： C23C16/4405

摘要： The method according to the invention includes the steps of: purging an inside of the processing chamber with gas while applying a thermal impact onto the thin film deposited on the inside of the processing chamber by decreasing the temperature in the processing chamber, so as to forcibly generate a crack in the thin film and forcibly peel the adhered material with a weak adhesive force, in a state where the substrate is not present in the processing chamber; removing the thin film deposited on the inside of the processing chamber by supplying a fluorine-based gas to the inside of the processing chamber heated to a first temperature, in the state where the substrate is not present in the processing chamber; and removing an adhered material remaining on the inside of the processing chamber after removing the thin film by supplying a fluorine-based gas to the inside of the processing chamber heated to a second temperature, in the state where the substrate is not present in the processing chamber.

摘要翻译： 根据本发明的方法包括以下步骤：通过降低处理室中的温度，在气体中吹扫处理室内部，同时对沉积在处理室内部的薄膜进行热冲击，以强制 在基板不存在于处理室中的状态下，在薄膜中产生裂纹并以弱的粘合力强制剥离粘附材料; 在基板不存在于处理室中的状态下，通过向被加热到第一温度的处理室的内部供应氟基气体来除去沉积在处理室内部的薄膜; 在加工到第二温度的处理室的内部，通过向处理室内部供给氟系气体而除去薄膜后残留在处理室内部的粘附物质， 房间。

公开(公告)号：US20090087964A1

公开(公告)日：2009-04-02

申请号：US12223718

申请日：2007-03-15

申请人： Takahiro Maeda ,  Kiyohiko Maeda ,  Takashi Ozaki ,  Akihito Yoshino ,  Yasunobu Koshi ,  Yuji Urano

发明人： Takahiro Maeda ,  Kiyohiko Maeda ,  Takashi Ozaki ,  Akihito Yoshino ,  Yasunobu Koshi ,  Yuji Urano

IPC分类号： H01L21/20 ,  H01L21/30

CPC分类号： H01L21/30 ,  C23C16/345 ,  C23C16/4405 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/52 ,  H01L21/3185

摘要： To realize a high productivity while maintaining excellent film deposition characteristics on a substrate even if a plurality of processing gases of different gas species are used. There are provided the step of loading a plurality of substrates into a processing chamber; supplying a first processing gas to an upper stream side of a gas flow outside of a region where a plurality of substrates loaded into a processing chamber are arranged, supplying a second processing gas to the upper stream side of the gas flow outside of the region where the plurality of substrates loaded into the processing chamber are arranged, supplying the first processing gas to a middle part of the gas flow in the region where the plurality of substrates loaded into the processing chamber are arranged, and causing the first processing gas and the second processing gas to react with each other in the processing chamber, to form an amorphous material and form a thin film on main surfaces of the plurality of substrates; and the step of unloading the substrate after forming the thin film from the processing camber.

摘要翻译： 为了实现高生产率，同时在使用不同气体种类的多种处理气体的同时在基板上保持优异的成膜特性。 提供了将多个基板装载到处理室中的步骤; 将第一处理气体供给到其中布置有多个基板的区域外的气流的上游侧，将第二处理气体供给到所述气流的上游侧， 布置了装载到处理室中的多个基板，将第一处理气体供给到布置有加载到处理室中的多个基板的区域中的气流的中间部分，并且使第一处理气体和第二处理气体 处理气体在处理室中彼此反应，以形成非晶材料并在多个基板的主表面上形成薄膜; 以及在从所述加工弯度形成所述薄膜之后卸载所述基板的步骤。

公开(公告)号：US20060033025A1

公开(公告)日：2006-02-16

申请号：US11232267

申请日：2005-09-21

申请人： Noboru Ichinose ,  Kiyoshi Shimamura ,  Yuji Urano ,  Satoshi Nakakita

发明人： Noboru Ichinose ,  Kiyoshi Shimamura ,  Yuji Urano ,  Satoshi Nakakita

IPC分类号： G01T1/11

CPC分类号： G21K4/00 ,  C09K9/00 ,  C09K11/616 ,  C09K11/7732 ,  C30B15/00 ,  C30B29/12

摘要： The present invention provides a fluoride single-crystal material for use in a thermoluminescence dosimeter, which material exhibits a thermoluminescence efficiency higher than that of conventional similar materials, and a thermoluminescence dosimeter employing the material. The fluoride single-crystal material for use in a thermoluminescence dosimeter contains a compound represented by LiXAlF6, wherein X is selected from the group consisting of Ca, Sr, Mg, and Ba, and, serving as a dopant, at least one species selected from among Ce, Na, Eu, Nd, Pr, Tm, Tb, and Er.

摘要翻译： 本发明提供一种用于热释光剂量计的氟化物单晶材料，该材料表现出比常规类似材料高的热释光效率，以及采用该材料的热释光剂量计。 用于热释光剂量计的氟化物单晶材料包含由LiXAlF 6表示的化合物，其中X选自Ca，Sr，Mg和Ba，并且作为 掺杂剂，选自Ce，Na，Eu，Nd，Pr，Tm，Tb和Er中的至少一种。

公开(公告)号：US06777609B2

公开(公告)日：2004-08-17

申请号：US10100481

申请日：2002-03-18

申请人： Noboru Ichinose ,  Shinsuke Arita ,  Toshiaki Ueno ,  Yuji Urano

发明人： Noboru Ichinose ,  Shinsuke Arita ,  Toshiaki Ueno ,  Yuji Urano

IPC分类号： H01L3512

CPC分类号： C01G51/006 ,  B01J2219/3221 ,  B01J2219/32213 ,  B01J2219/32408 ,  C01G51/66 ,  C01P2002/20 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2004/41 ,  C01P2004/80 ,  C01P2006/11 ,  C01P2006/40 ,  C01P2006/80 ,  H01L35/22

摘要： The invention provides a thermoelectric conversion material which is low toxic and can be used at a high temperature of 500° C. or higher without variation in performance, and a thermoelectric conversion device containing the material. The thermoelectric conversion material is formed of an oxide represented by (Ca3-xMx)Co4O9 (M: Sr or Ba, 1.2>x>0.5).

摘要翻译： 本发明提供一种低毒性并且可以在500℃以上的高温下使用而没有性能变化的热电转换材料和含有该材料的热电转换装置。 热电转换材料由（Ca 3-x M x）Co 4 O 9（M：Sr或Ba，1.2> x> 0.5）表示的氧化物形成。