摘要:
The invention provides a precursor composition for forming an amorphous metal oxide semiconductor layer, containing a metal salt, a primary amide, and a water-based solution. An amorphous metal oxide semiconductor layer is formed by use of the composition.
摘要:
It is an object to provide a resist underlayer film forming composition having a selection ratio of dry etching rate larger than that of a resist film and exhibiting a low k value and a high n value at a short wavelength such as that of an ArF excimer laser, and enabling the formation of a resist pattern having a desired shape. When the composition is produced or used, it is required that odor due to a raw material monomer causes no problem. The object is solved by a resist underlayer film forming composition for lithography containing a polymer having in backbone thereof, a disulfide bond (S—S bond), and a solvent. The polymer may be a product of a reaction between at least one type of compound (diepoxy compound) containing two epoxy groups and at least one type of dicarboxylic acid containing a disulfide bond.
摘要:
There is provided an anti-reflective coating forming composition for lithography comprising a reaction product obtained by reacting a sulfur-containing compound having thiourea structure with a nitrogen-containing compound having two or more nitrogen atoms substituted with a hydroxymethyl group or an alkoxymethyl group in the presence of an acid catalyst and a solvent. The anti-reflective coating obtained from the composition has a high preventive effect for reflected light, causes no intermixing with photoresists, has a higher dry etching rate compared with photoresists and can use in lithography process for manufacturing semiconductor device.
摘要:
There is provided an anti-reflective coating forming composition comprising a solid content and a solvent, wherein a proportion of sulfur atom in the solid content is 5 to 25 mass %. The anti-reflective coating obtained from the composition has a high preventive effect for reflected light, causes no intermixing with photoresists, and can use in lithography process by use of a light having a short wavelength such as F2 excimer laser beam (wavelength 157 nm) or ArF excimer laser beam (wavelength 193 nm), etc.
摘要:
There is provided an anti-reflective coating forming composition comprising a polymer having a pyrimidinetrione structure, imidazolidinedione structure, imidazolidinetrione structure or triazinetrione structure and a solvent. The anti-reflective coating obtained from the composition has a high preventive effect for reflected light, causes no intermixing with photoresists, and can use in lithography process by use of a light having a short wavelength such as ArF excimer laser beam (wavelength 193 nm) or F2 excimer laser beam (wavelength 157 nm), etc.
摘要:
This charge-transporting varnish, which contains a solvent, an electron-accepting dopant substance, and an aryldiamine compound represented by formula (1), imparts a charge-transporting thin film that has high transparency and can evince favorable element characteristics when applied to an organic EL element. (In the formula: R1-R4 each independently represent a hydrogen atom, a halogen atom, a nitro group, a cyano group, a hydroxyl group, a thiol group, a phosphate group, a sulfone group, a carboxyl group, an alkoxy group having 1-20 carbon atoms, or the like; R5-R8 each independently represent a hydrogen atom, a phenyl group, a naphthyl group, a pyridyl group, a pyrimidinyl group, a pyridazinyl group, a pyrazinyl group, a furanyl group, a pyrrolyl group, a pyrazolyl group, an imidazolyl group, a thienyl group, or the like; and n represents an integer from 2 to 5.)
摘要:
Disclosed is a lithographic composition for forming a resist underlayer film, which can be used as a lower layer antireflection film by which an exposure light striking on a photoresist formed on a semiconductor substrate is inhibited from being reflected from the substrate in a lithographic process of manufacturing semiconductor equipment, a planarization film for flattening a semiconductor substrate having a rugged surface used in order to fill in a hole formed on the semiconductor substrate, a film which prevents a photoresist from being contaminated by a substance generated from a semiconductor substrate during heating/burning, or the like. The lithographic composition for forming a resist underlayer comprises a polymer having a structure of formula (1): (where Y represents a C1-10 alkylene group or a C6-14 aromatic ring, provided that the alkylene group and the aromatic ring have one or more hydroxyl group(s) being not larger than the number of the replaceable hydrogen atom of the alkylene group and the aromatic ring); and a solvent.
摘要:
There is provided a composition for forming a resist underlayer film having a large selection ratio of dry etching rate, exhibiting desired values of the k value and the refractive index n at a short wavelength, for example, in an ArF excimer laser, and further, exhibiting solvent resistance. A resist underlayer film forming composition for lithography comprises a linear polymer having, in a main chain thereof, at least one of an aromatic ring-containing structure and a nitrogen atom-containing structure; and a solvent, wherein to the aromatic ring or the nitrogen atom, at least one alkoxyalkyl group or hydroxyalkyl group is directly bonded.
摘要:
It is an object to provide a resist underlayer film forming composition having a selection ratio of dry etching rate larger than that of a resist film and exhibiting a low k value and a high n value at a short wavelength such as that of an ArF excimer laser, and enabling the formation of a resist pattern having a desired shape. When the composition is produced or used, it is required that odor due to a raw material monomer causes no problem. The object is solved by a resist underlayer film forming composition for lithography containing a polymer having in backbone thereof, a disulfide bond (S—S bond), and a solvent. The polymer may be a product of a reaction between at least one type of compound (diepoxy compound) containing two epoxy groups and at least one type of dicarboxylic acid containing a disulfide bond.
摘要:
This charge-transporting varnish, which contains a solvent, an electron-accepting dopant substance, and an aryldiamine compound represented by formula (1), imparts a charge-transporting thin film that has high transparency and can evince favorable element characteristics when applied to an organic EL element. (In the formula: R1-R4 each independently represent a hydrogen atom, a halogen atom, a nitro group, a cyano group, a hydroxyl group, a thiol group, a phosphate group, a sulfone group, a carboxyl group, an alkoxy group having 1-20 carbon atoms, or the like; R5-R8 each independently represent a hydrogen atom, a phenyl group, a naphthyl group, a pyridyl group, a pyrimidinyl group, a pyridazinyl group, a pyrazinyl group, a furanyl group, a pyrrolyl group, a pyrazolyl group, an imidazolyl group, a thienyl group, or the like; and n represents an integer from 2 to 5.)