Sulfur atom-containing resist underlayer film forming composition and method for forming resist pattern
    2.
    发明授权
    Sulfur atom-containing resist underlayer film forming composition and method for forming resist pattern 有权
    含硫原子的抗蚀剂下层膜形成组合物和形成抗蚀剂图案的方法

    公开(公告)号:US08318410B2

    公开(公告)日:2012-11-27

    申请号:US12812967

    申请日:2009-01-23

    摘要: It is an object to provide a resist underlayer film forming composition having a selection ratio of dry etching rate larger than that of a resist film and exhibiting a low k value and a high n value at a short wavelength such as that of an ArF excimer laser, and enabling the formation of a resist pattern having a desired shape. When the composition is produced or used, it is required that odor due to a raw material monomer causes no problem. The object is solved by a resist underlayer film forming composition for lithography containing a polymer having in backbone thereof, a disulfide bond (S—S bond), and a solvent. The polymer may be a product of a reaction between at least one type of compound (diepoxy compound) containing two epoxy groups and at least one type of dicarboxylic acid containing a disulfide bond.

    摘要翻译: 本发明的目的是提供一种抗蚀剂下层膜形成组合物,其干蚀刻速率选择比大于抗蚀剂膜的选择比,并且在短波长下表现出低k值和高n值,例如ArF准分子激光 并且能够形成具有期望形状的抗蚀剂图案。 当生产或使用组合物时,需要由于原料单体引起的气味没有问题。 该目的通过含有主链的聚合物,二硫键(S-S键)和溶剂的用于光刻的抗蚀剂下层膜形成组合物来解决。 聚合物可以是至少一种含有两个环氧基的化合物(二环氧基化合物)与含有二硫键的至少一种二羧酸之间的反应的产物。

    Sulfur atom-containing anti-reflective coating forming composition for lithography
    3.
    发明授权
    Sulfur atom-containing anti-reflective coating forming composition for lithography 有权
    含硫原子的抗反射涂层组合物用于光刻

    公开(公告)号:US07795369B2

    公开(公告)日:2010-09-14

    申请号:US11664989

    申请日:2005-09-27

    IPC分类号: C08G12/32 C08G12/12

    CPC分类号: G03F7/091

    摘要: There is provided an anti-reflective coating forming composition for lithography comprising a reaction product obtained by reacting a sulfur-containing compound having thiourea structure with a nitrogen-containing compound having two or more nitrogen atoms substituted with a hydroxymethyl group or an alkoxymethyl group in the presence of an acid catalyst and a solvent. The anti-reflective coating obtained from the composition has a high preventive effect for reflected light, causes no intermixing with photoresists, has a higher dry etching rate compared with photoresists and can use in lithography process for manufacturing semiconductor device.

    摘要翻译: 提供了一种用于光刻的抗反射涂层形成组合物,其包含通过使具有硫脲结构的含硫化合物与具有羟基甲基或烷氧基甲基取代的具有两个或更多个氮原子的含氮化合物反应而获得的反应产物 存在酸催化剂和溶剂。 由组合物得到的抗反射涂层对于反射光具有很高的防止效果,不会与光致抗蚀剂混合,与光致抗蚀剂相比具有更高的干蚀刻速度,并可用于制造半导体器件的光刻工艺。

    Anti-reflective coating containing sulfur atom
    4.
    发明授权
    Anti-reflective coating containing sulfur atom 有权
    含有硫原子的防反射涂层

    公开(公告)号:US07501229B2

    公开(公告)日:2009-03-10

    申请号:US10592805

    申请日:2005-03-15

    摘要: There is provided an anti-reflective coating forming composition comprising a solid content and a solvent, wherein a proportion of sulfur atom in the solid content is 5 to 25 mass %. The anti-reflective coating obtained from the composition has a high preventive effect for reflected light, causes no intermixing with photoresists, and can use in lithography process by use of a light having a short wavelength such as F2 excimer laser beam (wavelength 157 nm) or ArF excimer laser beam (wavelength 193 nm), etc.

    摘要翻译: 提供了包含固体含量和溶剂的抗反射涂层形成组合物,其中固体含量中硫原子的比例为5〜25质量%。 由组合物获得的抗反射涂层对反射光具有很高的防止效果,不会与光致抗蚀剂混合,并且可以在光刻工艺中使用具有短波长的光,例如F2准分子激光束(波长157nm) 或ArF准分子激光束(波长193nm)等

    CHARGE-TRANSPORTING VARNISH
    6.
    发明申请
    CHARGE-TRANSPORTING VARNISH 有权
    充电运输VARNISH

    公开(公告)号:US20140227815A1

    公开(公告)日:2014-08-14

    申请号:US14346115

    申请日:2012-09-14

    IPC分类号: H01L51/00 H01L51/50 C09D5/24

    摘要: This charge-transporting varnish, which contains a solvent, an electron-accepting dopant substance, and an aryldiamine compound represented by formula (1), imparts a charge-transporting thin film that has high transparency and can evince favorable element characteristics when applied to an organic EL element. (In the formula: R1-R4 each independently represent a hydrogen atom, a halogen atom, a nitro group, a cyano group, a hydroxyl group, a thiol group, a phosphate group, a sulfone group, a carboxyl group, an alkoxy group having 1-20 carbon atoms, or the like; R5-R8 each independently represent a hydrogen atom, a phenyl group, a naphthyl group, a pyridyl group, a pyrimidinyl group, a pyridazinyl group, a pyrazinyl group, a furanyl group, a pyrrolyl group, a pyrazolyl group, an imidazolyl group, a thienyl group, or the like; and n represents an integer from 2 to 5.)

    摘要翻译: 含有溶剂,电子接受性掺杂物质和式(1)所示的芳基二胺化合物的电荷输送性清漆赋予透明性高的电荷输送性薄膜,能够在施加到 有机EL元件。 (式中,R 1 -R 4各自独立地表示氢原子,卤原子,硝基,氰基,羟基,硫醇基,磷酸基,砜基,羧基,烷氧基 具有1-20个碳原子等; R 5 -R 8各自独立地表示氢原子,苯基,萘基,吡啶基,嘧啶基,哒嗪基,吡嗪基,呋喃基,呋喃基, 吡咯基,吡唑基,咪唑基,噻吩基等; n表示2〜5的整数。)

    Composition containing hydroxylated condensation resin for forming resist underlayer film

    公开(公告)号:US08445175B2

    公开(公告)日:2013-05-21

    申请号:US12308566

    申请日:2007-06-15

    摘要: Disclosed is a lithographic composition for forming a resist underlayer film, which can be used as a lower layer antireflection film by which an exposure light striking on a photoresist formed on a semiconductor substrate is inhibited from being reflected from the substrate in a lithographic process of manufacturing semiconductor equipment, a planarization film for flattening a semiconductor substrate having a rugged surface used in order to fill in a hole formed on the semiconductor substrate, a film which prevents a photoresist from being contaminated by a substance generated from a semiconductor substrate during heating/burning, or the like. The lithographic composition for forming a resist underlayer comprises a polymer having a structure of formula (1): (where Y represents a C1-10 alkylene group or a C6-14 aromatic ring, provided that the alkylene group and the aromatic ring have one or more hydroxyl group(s) being not larger than the number of the replaceable hydrogen atom of the alkylene group and the aromatic ring); and a solvent.

    Resist underlayer film forming composition and method for forming resist pattern
    8.
    发明授权
    Resist underlayer film forming composition and method for forming resist pattern 有权
    抗蚀剂下层膜形成组合物和形成抗蚀剂图案的方法

    公开(公告)号:US08361695B2

    公开(公告)日:2013-01-29

    申请号:US12747039

    申请日:2008-12-09

    IPC分类号: G03F7/004 G03F7/30

    CPC分类号: G03F7/11 C08G59/226 C08G59/38

    摘要: There is provided a composition for forming a resist underlayer film having a large selection ratio of dry etching rate, exhibiting desired values of the k value and the refractive index n at a short wavelength, for example, in an ArF excimer laser, and further, exhibiting solvent resistance. A resist underlayer film forming composition for lithography comprises a linear polymer having, in a main chain thereof, at least one of an aromatic ring-containing structure and a nitrogen atom-containing structure; and a solvent, wherein to the aromatic ring or the nitrogen atom, at least one alkoxyalkyl group or hydroxyalkyl group is directly bonded.

    摘要翻译: 提供了一种用于形成抗蚀剂下层膜的组合物,其具有大的干蚀刻速率选择比,在短波长下显示k值和折射率n的期望值,例如在ArF准分子激光器中,此外, 具有耐溶剂性。 用于光刻的抗蚀剂下层膜形成组合物包括在主链中具有含芳环结构和含氮原子的结构中的至少一种的线性聚合物; 和溶剂,其中至少一个烷氧基烷基或羟烷基直接与芳环或氮原子结合。

    SULFUR ATOM-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
    9.
    发明申请
    SULFUR ATOM-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION AND METHOD FOR FORMING RESIST PATTERN 有权
    含硫电阻膜形成组合物和形成耐蚀图案的方法

    公开(公告)号:US20110053091A1

    公开(公告)日:2011-03-03

    申请号:US12812967

    申请日:2009-01-23

    IPC分类号: G03F7/20 C09K9/00

    摘要: It is an object to provide a resist underlayer film forming composition having a selection ratio of dry etching rate larger than that of a resist film and exhibiting a low k value and a high n value at a short wavelength such as that of an ArF excimer laser, and enabling the formation of a resist pattern having a desired shape. When the composition is produced or used, it is required that odor due to a raw material monomer causes no problem. The object is solved by a resist underlayer film forming composition for lithography containing a polymer having in backbone thereof, a disulfide bond (S—S bond), and a solvent. The polymer may be a product of a reaction between at least one type of compound (diepoxy compound) containing two epoxy groups and at least one type of dicarboxylic acid containing a disulfide bond.

    摘要翻译: 本发明的目的是提供一种抗蚀剂下层膜形成组合物,其干蚀刻速率选择比大于抗蚀剂膜的选择比,并且在短波长下表现出低k值和高n值,例如ArF准分子激光 并且能够形成具有期望形状的抗蚀剂图案。 当生产或使用组合物时,需要由于原料单体引起的气味没有问题。 该目的通过含有主链的聚合物,二硫键(S-S键)和溶剂的用于光刻的抗蚀剂下层膜形成组合物来解决。 聚合物可以是至少一种含有两个环氧基的化合物(二环氧基化合物)与含有二硫键的至少一种二羧酸之间的反应的产物。