公开(公告)号：US08830000B2

公开(公告)日：2014-09-09

申请号：US13598512

申请日：2012-08-29

申请人： Moon Suk Jeong ,  Nam Heung Kim ,  Hyun Paek ,  Su Kyong Kim ,  Shin Hwan Hwang ,  Yoo Sam Na

发明人： Moon Suk Jeong ,  Nam Heung Kim ,  Hyun Paek ,  Su Kyong Kim ,  Shin Hwan Hwang ,  Yoo Sam Na

IPC分类号： H03F1/22

CPC分类号： H03F1/223 ,  H03F3/211 ,  H03F2200/111 ,  H03F2200/429

摘要： Provided is a multi-band amplifier and a method of amplifying a multi-band. The multi-band amplifier includes a wireless signal input terminal into which a first frequency band signal and a second frequency band signal are input, a first impedance matching part connected to the wireless signal input terminal and configured to match an input impedance in a first frequency band, a second impedance matching part connected to the wireless signal input terminal and configured to match an input impedance in a second frequency band, a common source amplifier to which the first impedance matching part and the second impedance matching part, and a common gate amplifier connected to the common source amplifier. Accordingly, performance degradation can be reduced in comparison with a conventional amplifier, broadband amplification as well as narrow band amplification can be performed, and an amplification gain can be adjusted.

摘要翻译： 提供了一种多频带放大器和放大多频带的方法。 多频带放大器包括：无线信号输入端子，其中输入第一频带信号和第二频带信号;第一阻抗匹配部分，连接到无线信号输入端子，并且被配置为使第一频率的输入阻抗匹配 频带，第二阻抗匹配部分，连接到无线信号输入端并被配置为匹配第二频带中的输入阻抗，第一阻抗匹配部分和第二阻抗匹配部分的公共源放大器，以及公共栅极放大器 连接到公共源放大器。 因此，与传统的放大器相比，可以降低性能下降，可以进行宽带放大以及窄带放大，并且可以调节放大增益。

公开(公告)号：US08736376B2

公开(公告)日：2014-05-27

申请号：US13444491

申请日：2012-04-11

申请人： Gyu Suck Kim ,  Yoo Sam Na

发明人： Gyu Suck Kim ,  Yoo Sam Na

IPC分类号： H03F3/21

CPC分类号： H03F1/304

摘要： There is provided a power amplifier module having a bias circuit, in which a bias power is supplied to an amplifier by differently setting an impedance between an input signal terminal and a reference power terminal and an impedance between the input signal terminal and a ground. The power amplifier module includes: an amplifier unit receiving a bias power to amplify an input signal; and a bias unit supplying the bias power to the amplifier, by differently setting an impedance between an input signal terminal transmitting the input signal therethrough and a reference power terminal transmitting a reference power having a predetermined voltage level and an impedance between the input signal terminal and a ground.

摘要翻译： 提供了一种具有偏置电路的功率放大器模块，其中通过不同地设置输入信号端子和参考电源端子之间的阻抗以及输入信号端子和地之间的阻抗来将偏置功率提供给放大器。 功率放大器模块包括：放大器单元，接收偏置功率以放大输入信号; 以及偏置单元，通过不同地设置发送所述输入信号的输入信号端之间的阻抗和发送具有预定电压电平的参考功率的参考电源端子和所述输入信号端子和 一个地面。

公开(公告)号：US08531243B2

公开(公告)日：2013-09-10

申请号：US13370227

申请日：2012-02-09

申请人： Hyun Hwan Yoo ,  Yoo Hwan Kim ,  Yoo Sam Na

发明人： Hyun Hwan Yoo ,  Yoo Hwan Kim ,  Yoo Sam Na

IPC分类号： H03F3/04

CPC分类号： H03F1/301 ,  H03F3/193 ,  H03F3/245 ,  H03F2200/447 ,  H03F2200/555

摘要： The present invention includes: a temperature compensation circuit for generating a digital signal corresponding to a temperature of a transistor and outputting a compensation bias current obtained by adding a control current to a reference bias current or by subtracting the control signal from the reference bias current using the generated digital signal; a characteristics compensation circuit for detecting a characteristics error of a mirror transistor connected to the transistor in parallel and for outputting a compensation signal to compensate the characteristics error; and a bias compensation circuit for compensating a bias power applied to the transistor using the compensation bias current and the compensation signal to output the compensated bias power. The present invention is capable of improving the performance of the transistor.

摘要翻译： 本发明包括：温度补偿电路，用于产生对应于晶体管的温度的数字信号，并输出通过将控制电流加到参考偏置电流而获得的补偿偏置电流，或者通过使用 生成的数字信号; 特性补偿电路，用于并联检测连接到晶体管的反射镜晶体管的特性误差，并输出补偿信号以补偿特性误差; 以及偏置补偿电路，用于使用补偿偏置电流和补偿信号来补偿施加到晶体管的偏置功率，以输出补偿的偏置功率。 本发明能够提高晶体管的性能。

公开(公告)号：US20130057349A1

公开(公告)日：2013-03-07

申请号：US13223738

申请日：2011-09-01

申请人： Byeong Hak JO ,  Yoo Sam NA ,  Hyeon Seok HWANG ,  Moon Suk JEONG ,  Gyu Suck KIM ,  Moon Sun KIM

发明人： Byeong Hak JO ,  Yoo Sam NA ,  Hyeon Seok HWANG ,  Moon Suk JEONG ,  Gyu Suck KIM ,  Moon Sun KIM

IPC分类号： H03F3/21 ,  H03F1/22

CPC分类号： H03F1/3205 ,  H03F1/223 ,  H03F3/211 ,  H03F2200/108 ,  H03F2200/18

摘要： There is provided a complementary metal oxide semiconductor (CMOS) power amplifier including: a load unit connected between an operating voltage supply terminal and an output terminal; an amplifying unit formed as a cascode structure between the load unit and a ground, amplifying a power of an input signal input through an input terminal and outputting the amplified signal through an output terminal; and a threshold voltage control unit varying a threshold voltage of the amplifying unit according to a magnitude of the input signal input through the input terminal.

摘要翻译： 提供了一种互补金属氧化物半导体（CMOS）功率放大器，包括：连接在工作电压源端子和输出端子之间的负载单元; 放大单元，其形成为负载单元和地之间的共源共栅结构，放大通过输入端输入的输入信号的功率，并通过输出端输出放大的信号; 以及阈值电压控制单元，根据通过输入端子输入的输入信号的大小来改变放大单元的阈值电压。

公开(公告)号：US20120299657A1

公开(公告)日：2012-11-29

申请号：US13279953

申请日：2011-10-24

申请人： Bon Hoon KOO ,  Byeong Hak Jo ,  Ki Yong Son ,  Yoo Sam Na ,  Song Cheol Hong

发明人： Bon Hoon KOO ,  Byeong Hak Jo ,  Ki Yong Son ,  Yoo Sam Na ,  Song Cheol Hong

IPC分类号： H03F3/68 ,  H03F1/22

CPC分类号： H03F1/223 ,  H03F1/0277 ,  H03F3/195 ,  H03F3/245 ,  H03F3/72 ,  H03F2200/18 ,  H03F2200/222 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/411 ,  H03F2200/516 ,  H03F2200/541 ,  H03F2203/7221 ,  H03F2203/7236

摘要： There is provided a multi-mode power amplifier operable in a low power mode having a preset power range and in a high power mode having a power range higher than the power range of the low power mode. The multi-mode power amplifier includes: a high power amplifying unit including at least one cascode amplifier to amplify an input signal to a high power level having a preset power range; a low power amplifying unit sharing a common source node of the at least one cascode amplifier to amplify the input signal to a low power level having a power range lower than the high power level; and a coupling unit coupling a transfer path of a signal output from the high power amplifying unit and a transfer path of a signal output from the low power amplifying unit to each other.

摘要翻译： 提供了一种可在具有预设功率范围的低功率模式下工作的多模式功率放大器和功率范围高于低功率模式的功率范围的高功率模式。 多模式功率放大器包括：高功率放大单元，包括至少一个共源共栅放大器，用于将输入信号放大到具有预设功率范围的高功率电平; 共享所述至少一个共源共栅放大器的公共源节点的低功率放大单元，以将所述输入信号放大到功率范围低于所述高功率电平的低功率电平; 以及耦合单元，耦合从高功率放大单元输出的信号的传输路径和从低功率放大单元输出的信号的传送路径。

公开(公告)号：US08143950B2

公开(公告)日：2012-03-27

申请号：US12712071

申请日：2010-02-24

申请人： Hyeon Seok Hwang ,  Yoo Sam Na ,  Moon Suk Jeong ,  Gyu Suck Kim ,  Byeong Hak Jo

发明人： Hyeon Seok Hwang ,  Yoo Sam Na ,  Moon Suk Jeong ,  Gyu Suck Kim ,  Byeong Hak Jo

IPC分类号： H03F1/52 ,  H03F1/22

CPC分类号： H03F1/223

摘要： Disclosed herein is a power amplifier. The power amplifier includes a first common source transistor for amplifying an input signal into a predetermined level, a second common source transistor for compensating for input capacitance and performing auxiliary amplification for the first common source transistor, and a common gate transistor connected to the first common source transistor in a cascode structure, configured to be connected in parallel to the second common source transistor and prevent the first common source transistor from breaking down, and configured to output a signal amplified by a value obtained by adding the gain of the first common source transistor and the gain of the second common source transistor to each other.

摘要翻译： 这里公开了功率放大器。 功率放大器包括用于将输入信号放大到预定电平的第一公共源极晶体管，用于补偿输入电容并对第一公共源晶体管执行辅助放大的第二公共源极晶体管，以及连接到第一公共栅极晶体管的公共栅极晶体管 源极晶体管，其被配置为并联连接到第二公共源极晶体管，并且防止第一公共源极晶体管分解，并且被配置为输出通过将第一公共源的增益相加而获得的值放大的信号 晶体管和第二公共源极晶体管的增益。

公开(公告)号：US20110304395A1

公开(公告)日：2011-12-15

申请号：US13006920

申请日：2011-01-14

申请人： Bon Hoon KOO ,  Ki Yong SON ,  Song Cheol HONG ,  Gyu Suck KIM ,  Yoo Sam NA

发明人： Bon Hoon KOO ,  Ki Yong SON ,  Song Cheol HONG ,  Gyu Suck KIM ,  Yoo Sam NA

IPC分类号： H03F3/45 ,  H03F3/68 ,  H03F1/22 ,  H03F3/16

CPC分类号： H03F3/195 ,  H03F1/0261 ,  H03F1/223 ,  H03F3/211 ,  H03F3/245 ,  H03F3/45179 ,  H03F2200/06 ,  H03F2200/09 ,  H03F2200/18 ,  H03F2200/451

摘要： Disclosed is a power amplifier. A power amplifier according to an aspect of the invention may include: a first amplification section having a first N metal oxide semiconductor (MOS) amplifier and a second N MOS amplifier connected in a cascode configuration and amplifying an input signal; a second amplification section having a first P MOS amplifier and a second P MOS amplifier connected in a cascode configuration and amplifying the input signal; and a power combining section combining respective output signals of the first amplification section and the second amplification section.

摘要翻译： 公开了一种功率放大器。 根据本发明的一个方面的功率放大器可以包括：第一放大部分，具有第一N个金属氧化物半导体（MOS）放大器和以共源共极配置连接并放大输入信号的第二N个MOS放大器; 第二放大部分，具有第一P MOS放大器和以共源共享配置连接的第二P MOS放大器，并放大输入信号; 以及组合第一放大部分和第二放大部分的输出信号的功率合并部分。

公开(公告)号：US08031002B2

公开(公告)日：2011-10-04

申请号：US12504127

申请日：2009-07-16

申请人： Byeong Hak Jo ,  Yoo Sam Na ,  Yoo Hwan Kim

发明人： Byeong Hak Jo ,  Yoo Sam Na ,  Yoo Hwan Kim

IPC分类号： H03F3/26

CPC分类号： H03F1/301 ,  H03F3/3028 ,  H03F2200/18 ,  H03F2200/447

摘要： A buffer amplifier has high input impedance and is less affected by temperature by supplying independent bias power to each of amplification units. The buffer amplifier includes a bias supply unit supplying bias power having a preset voltage level, an amplification unit receiving preset driving power and the bias power from the bias supply unit to amplify an input signal, and a compensation unit compensating for current unbalance of the driving power supplied to the amplification unit.

摘要翻译： 缓冲放大器具有高输入阻抗，并且通过向每个放大单元提供独立的偏置功率而受温度影响较小。 缓冲放大器包括提供具有预设电压电平的偏置功率的偏置电源单元，接收预设驱动功率的放大单元和来自偏置电源单元的偏置功率以放大输入信号;以及补偿单元，用于补偿电流的当前不平衡 提供给放大单元的功率。

公开(公告)号：US20110156817A1

公开(公告)日：2011-06-30

申请号：US12712071

申请日：2010-02-24

申请人： Hyeon Seok HWANG ,  Yoo Sam NA ,  Moon Suk JEONG ,  Gyu Suck KIM ,  Byeong Hak JO

发明人： Hyeon Seok HWANG ,  Yoo Sam NA ,  Moon Suk JEONG ,  Gyu Suck KIM ,  Byeong Hak JO

IPC分类号： H03F3/16

CPC分类号： H03F1/223

摘要： Disclosed herein is a power amplifier. The power amplifier includes a first common source transistor for amplifying an input signal into a predetermined level, a second common source transistor for compensating for input capacitance and performing auxiliary amplification for the first common source transistor, and a common gate transistor connected to the first common source transistor in a cascode structure, configured to be connected in parallel to the second common source transistor and prevent the first common source transistor from breaking down, and configured to output a signal amplified by a value obtained by adding the gain of the first common source transistor and the gain of the second common source transistor to each other.

摘要翻译： 这里公开了功率放大器。 功率放大器包括用于将输入信号放大到预定电平的第一公共源极晶体管，用于补偿输入电容并对第一公共源晶体管执行辅助放大的第二公共源极晶体管，以及连接到第一公共栅极晶体管的公共栅晶体管 源极晶体管，其被配置为并联连接到第二公共源极晶体管，并且防止第一公共源极晶体管分解，并且被配置为输出通过将第一公共源的增益相加而获得的值放大的信号 晶体管和第二公共源极晶体管的增益。

公开(公告)号：US20110133834A1

公开(公告)日：2011-06-09

申请号：US12823772

申请日：2010-06-25

申请人： Byeong Hak JO ,  Yoo Sam NA ,  Moon Sun KIM ,  Yoo Hwan KIM

发明人： Byeong Hak JO ,  Yoo Sam NA ,  Moon Sun KIM ,  Yoo Hwan KIM

IPC分类号： H03G3/20

CPC分类号： H03G3/3042

摘要： There is provided a power amplifier with a variable supply of bias power according to a look-up table having a voltage value determined based on a level of an RF signal being input to the power amplifier to thereby increase power efficiency. A power amplifier according to an aspect of the invention may include an amplification section amplifying an input signal according to a bias voltage being supplied; and a bias supply section comparing a level of the input signal with a look-up table set in advance and supplying a bias voltage to the amplification section according to a result of the comparison.

摘要翻译： 根据具有基于输入到功率放大器的RF信号的电平确定的电压值的查找表，提供具有可变偏置电源的功率放大器，从而提高功率效率。 根据本发明的一个方面的功率放大器可以包括放大部分，其根据所提供的偏置电压来放大输入信号; 以及偏置电源部，其将输入信号的电平与预先设定的查找表进行比较，并根据比较结果向放大部提供偏置电压。