公开(公告)号：US08670452B2

公开(公告)日：2014-03-11

申请号：US12901064

申请日：2010-10-08

Applicant: Qiang Li ,  Yen-Jung Chang ,  Shiwei Wang

Inventor： Qiang Li ,  Yen-Jung Chang ,  Shiwei Wang

IPC: H04L12/28 ,  H04L12/56

CPC classification number: H04L61/2015 ,  H04L12/4625 ,  H04L29/12028 ,  H04L61/103

Abstract: A method for transmitting and receiving a message is provided. The method includes steps of providing a bridge device having a bridge hardware address and a first end, receiving a first message including a first hardware address, a first protocol address and a second protocol address from the first end, recording the first hardware address and the first protocol address on a table, replacing the first hardware address with the bridge hardware address, transmitting the first message to a second end having a second hardware address corresponding to the second protocol address; transmitting a second message including the first protocol address, the second protocol address, the bridge hardware address, and the second hardware address from the second end to the bridge device, replacing the bridge hardware address with the first hardware address according to the table; and transmitting the second message to the first end.

Abstract translation: 提供了一种用于发送和接收消息的方法。 该方法包括以下步骤：提供具有桥接硬件地址和第一端的桥接器件，从第一端接收包括第一硬件地址，第一协议地址和第二协议地址的第一消息，记录第一硬件地址和 将所述第一硬件地址替换为所述桥接器硬件地址，将所述第一消息发送到具有对应于所述第二协议地址的第二硬件地址的第二端; 从所述第二端向所述桥接设备发送包括所述第一协议地址，所述第二协议地址，所述桥接硬件地址和所述第二硬件地址的第二消息，根据所述表替换所述桥接器硬件地址与所述第一硬件地址; 以及将所述第二消息发送到所述第一端。

公开(公告)号：US06261893B1

公开(公告)日：2001-07-17

申请号：US09686932

申请日：2000-10-12

Applicant: Yen-Jung Chang ,  Yi-Chuan Yang ,  Jun-Jei Huang ,  Mo-Chung Tseng

Inventor： Yen-Jung Chang ,  Yi-Chuan Yang ,  Jun-Jei Huang ,  Mo-Chung Tseng

IPC: H01L218242

CPC classification number: H01L27/222 ,  B82Y10/00

Abstract: The present invention relates to a method for forming a magnetic layer of magnetic random access memory. In short, the method comprises following steps: providing a substrate; forming metal structures on substrate; forming a stop layer on substrate and mostly conformally covers metal structures; forming a buffer layer which mostly conformally covers stop layer; forming a dielectric layer on buffer layer where thickness of dielectric layer is larger than height of metal structures; planarizing the surface of said dielectric layer; and forming a magnetic layer on dielectric layer. Moreover, some essential key-points of the method are dielectric layer is more sensitive to said stop layer than buffer layer and gap fill ability of dielectric layer is better than gap fill ability of buffer layer.

Abstract translation: 本发明涉及磁性随机存取存储器的磁性层形成方法。 简而言之，该方法包括以下步骤：提供衬底; 在基底上形成金属结构; 在基材上形成停留层，大部分保形覆盖金属结构; 形成大致保守地覆盖停止层的缓冲层; 在介质层厚度大于金属结构高度的缓冲层上形成介电层; 平坦化所述介电层的表面; 并在电介质层上形成磁性层。 此外，该方法的一些基本关键点是介电层比缓冲层对所述停止层更敏感，并且介电层的间隙填充能力优于缓冲层的间隙填充能力。

公开(公告)号：US06191003B1

公开(公告)日：2001-02-20

申请号：US09487661

申请日：2000-01-19

Applicant: Ping-wei Lin ,  Chien-hung Chen ,  Jui-ping Li ,  Yen-jung Chang

Inventor： Ping-wei Lin ,  Chien-hung Chen ,  Jui-ping Li ,  Yen-jung Chang

IPC: H01L2176

CPC classification number: H01L21/3212 ,  H01L21/76224

Abstract: A method for planarizing a polycrystalline silicon layer deposited on a trench, which is formed on a semiconductor substrate, comprises the following steps. First, a polycrystalline silicon layer with an enough thickness is deposited on the surface of the semiconductor substrate to overfill the trench. At least one dimple is undesirably developed on the polycrystalline silicon layer during the polycrystalline silicon deposition. Then, an oxide layer with an enough thickness is formed on the polycrystalline silicon layer to overfill the at least one dimple. Next, the polycrystalline silicon layer is partially oxidized so as to transform the upper portion thereof into a polysilicon oxide layer. As a result of a non-uniform distribution of the oxidization rate, the bottom surface of the polysilicon oxide layer, i.e. the interface between the polysilicon oxide layer and the non-oxidized portion of the polycrystalline silicon layer, is substantially planar. Finally, the oxide layer and the polysilicon oxide layer are both removed so as to expose the substantially planar polycrystalline silicon layer.

Abstract translation: 用于平坦化沉积在沟槽上的多晶硅层的方法，其形成在半导体衬底上，包括以下步骤。 首先，在半导体衬底的表面上沉积具有足够厚度的多晶硅层，以过度填充沟槽。 在多晶硅沉积期间，至少一个凹坑不希望地在多晶硅层上显影​​。 然后，在多晶硅层上形成足够厚度的氧化物层，以过度填充至少一个凹坑。 接下来，多晶硅层被部分氧化，以将其上部变换成多晶硅氧化物层。 由于氧化速率的不均匀分布的结果，多晶硅氧化物层的底表面，即多晶硅氧化物层和多晶硅层的未氧化部分之间的界面基本上是平面的。 最后，去除氧化物层和多晶硅氧化物层，以暴露基本平坦的多晶硅层。

公开(公告)号：US20060198383A1

公开(公告)日：2006-09-07

申请号：US11311087

申请日：2005-12-19

Applicant: Qiang Li ,  Yen-Jung Chang ,  Shiwei Wang

Inventor： Qiang Li ,  Yen-Jung Chang ,  Shiwei Wang

IPC: H04L12/56

CPC classification number: H04L61/2015 ,  H04L12/4625 ,  H04L29/12028 ,  H04L61/103

Abstract: A method for transmitting and receiving a message is provided. The method includes steps of providing a bridge device having a bridge hardware address and a first end, receiving a first message including a first hardware address, a first protocol address and a second protocol address from the first end, recording the first hardware address and the first protocol address on a table, replacing the first hardware address with the bridge hardware address, transmitting the first message to a second end having a second hardware address corresponding to the second protocol address; transmitting a second message including the first protocol address, the second protocol address, the bridge hardware address, and the second hardware address from the second end to the bridge device, replacing the bridge hardware address with the first hardware address according to the table; and transmitting the second message to the first end.

Abstract translation: 提供了一种用于发送和接收消息的方法。 该方法包括以下步骤：提供具有桥接硬件地址和第一端的桥接器件，从第一端接收包括第一硬件地址，第一协议地址和第二协议地址的第一消息，记录第一硬件地址和 将所述第一硬件地址替换为所述桥接器硬件地址，将所述第一消息发送到具有对应于所述第二协议地址的第二硬件地址的第二端; 从所述第二端向所述桥接设备发送包括所述第一协议地址，所述第二协议地址，所述桥接硬件地址和所述第二硬件地址的第二消息，根据所述表替换所述桥接器硬件地址与所述第一硬件地址; 以及将所述第二消息发送到所述第一端。

公开(公告)号：US20110026448A1

公开(公告)日：2011-02-03

申请号：US12901064

申请日：2010-10-08

Applicant: Qiang Li ,  Yen-Jung Chang ,  Shiwei Wang

Inventor： Qiang Li ,  Yen-Jung Chang ,  Shiwei Wang

IPC: H04L12/56 ,  H04B7/00

CPC classification number: H04L61/2015 ,  H04L12/4625 ,  H04L29/12028 ,  H04L61/103

Abstract: A method for transmitting and receiving a message is provided. The method includes steps of providing a bridge device having a bridge hardware address and a first end, receiving a first message including a first hardware address, a first protocol address and a second protocol address from the first end, recording the first hardware address and the first protocol address on a table, replacing the first hardware address with the bridge hardware address, transmitting the first message to a second end having a second hardware address corresponding to the second protocol address; transmitting a second message including the first protocol address, the second protocol address, the bridge hardware address, and the second hardware address from the second end to the bridge device, replacing the bridge hardware address with the first hardware address according to the table; and transmitting the second message to the first end.

Abstract translation: 提供了一种用于发送和接收消息的方法。 该方法包括以下步骤：提供具有桥接硬件地址和第一端的桥接器件，从第一端接收包括第一硬件地址，第一协议地址和第二协议地址的第一消息，记录第一硬件地址和 将所述第一硬件地址替换为所述桥接器硬件地址，将所述第一消息发送到具有对应于所述第二协议地址的第二硬件地址的第二端; 从所述第二端向所述桥接设备发送包括所述第一协议地址，所述第二协议地址，所述桥接硬件地址和所述第二硬件地址的第二消息，根据所述表替换所述桥接器硬件地址与所述第一硬件地址; 以及将所述第二消息发送到所述第一端。