公开(公告)号：US07208818B2

公开(公告)日：2007-04-24

申请号：US10896375

申请日：2004-07-20

申请人： Leeshawn Luo ,  Anup Bhalla ,  Sik K. Lui ,  Yueh-Se Ho ,  Mike F. Chang ,  Xiao Tian Zhang

发明人： Leeshawn Luo ,  Anup Bhalla ,  Sik K. Lui ,  Yueh-Se Ho ,  Mike F. Chang ,  Xiao Tian Zhang

IPC分类号： H01L23/495

CPC分类号： H01L23/49562 ,  H01L23/492 ,  H01L23/49575 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4846 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/4943 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/2076 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00015

摘要： A semiconductor package including a relatively thick lead frame having a plurality of leads and a first lead frame pad, the first lead frame pad including a die coupled thereto, bonding wires connecting the die to the plurality of leads, the bonding wires being aluminum, and a resin body encapsulating the die, bonding wires and at least a portion of the lead frame.

摘要翻译： 一种半导体封装，包括具有多个引线的相对厚的引线框架和第一引线框架焊盘，所述第一引线框焊盘包括与其连接的管芯，将所述管芯连接到所述多个引线的接合线，所述接合线为铝，以及 封装模具的树脂体，接合线和引线框架的至少一部分。

公开(公告)号：US07394151B2

公开(公告)日：2008-07-01

申请号：US11058913

申请日：2005-02-15

申请人： Leeshawn Luo ,  Kai Liu ,  Ming Sun ,  Xiao Tian Zhang

发明人： Leeshawn Luo ,  Kai Liu ,  Ming Sun ,  Xiao Tian Zhang

IPC分类号： H01L23/48

CPC分类号： H01L21/568 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/49524 ,  H01L24/40 ,  H01L24/73 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/73253 ,  H01L2224/73255 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/37099 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor package and method for making a semiconductor package are disclosed. The semiconductor package has a top surface and a mounting surface and includes a die, a conducting connecting material, a plating material and an insulating material. The die has a processed surface facing towards the mounting surface of the semiconductor package. Exposed metal connections are at the processed surface of the die. The conducting connecting material is disposed on the exposed metal connections. The plating material is in contact with the conducting connecting material. The insulating material is formed around the conducting connecting material, and the plating material extends to the exterior of the insulating material.

公开(公告)号：US07897438B2

公开(公告)日：2011-03-01

申请号：US12154537

申请日：2008-05-22

申请人： Leeshawn Luo ,  Kai Liu ,  Ming Sun ,  Xiao Tian Zhang

发明人： Leeshawn Luo ,  Kai Liu ,  Ming Sun ,  Xiao Tian Zhang

IPC分类号： H01L21/00

CPC分类号： H01L21/568 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/49524 ,  H01L24/40 ,  H01L24/73 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/73253 ,  H01L2224/73255 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/37099 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor package and method for making a semiconductor package are disclosed. The semiconductor package has a top surface and a mounting surface and includes a die, a conducting connecting material, a plating material and an insulating material. The die has a processed surface facing towards the mounting surface of the semiconductor package. Exposed metal connections are at the processed surface of the die. The conducting connecting material is disposed on the exposed metal connections. The plating material is in contact with the conducting connecting material. The insulating material is formed around the conducting connecting material, and the plating material extends to the exterior of the insulating material.

摘要翻译： 公开了半导体封装和制造半导体封装的方法。 半导体封装具有顶表面和安装表面，并且包括管芯，导电连接材料，电镀材料和绝缘材料。 模具具有朝向半导体封装的安装表面的处理表面。 暴露的金属连接处于模具的加工表面。 导电连接材料设置在暴露的金属连接上。 电镀材料与导电连接材料接触。 绝缘材料围绕导电连接材料形成，电镀材料延伸到绝缘材料的外部。

公开(公告)号：US20150102425A1

公开(公告)日：2015-04-16

申请号：US14052711

申请日：2013-10-12

申请人： Ming Sun ,  Kai Liu ,  Xiao Tian Zhang ,  Yueh Se Ho ,  Leeshawn Luo

发明人： Ming Sun ,  Kai Liu ,  Xiao Tian Zhang ,  Yueh Se Ho ,  Leeshawn Luo

IPC分类号： H01L23/495 ,  H01L29/78 ,  H01L29/66 ,  H01L23/00

CPC分类号： H01L23/49562 ,  H01L23/492 ,  H01L23/4928 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L24/97 ,  H01L29/66477 ,  H01L29/78 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/83205 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/83895 ,  H01L2224/97 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/83 ,  H01L2924/014

摘要： A power device package for containing, protecting and providing electrical contacts for a power transistor includes a top and bottom lead frames for directly no-bump attaching to the power transistor. The power transistor is attached to the bottom lead frame as a flip-chip with a source contact and a gate contact directly no-bumping attaching to the bottom lead frame. The power transistor has a bottom drain contact attaching to the top lead frame. The top lead frame further includes an extension for providing a bottom drain electrode substantially on a same side with the bottom lead frame. In a preferred embodiment, the power device package further includes a joint layer between device metal of source, gate or drain and top or bottom lead frame, through applying ultrasonic energy.

摘要翻译： 用于容纳，保护和提供用于功率晶体管的电触头的功率器件封装包括用于直接不连接到功率晶体管的顶部和底部引线框架。 功率晶体管作为具有源极接触的倒装芯片附接到底部引线框架，并且栅极接触件直接地不连接到底部引线框架上。 功率晶体管具有附接到顶部引线框架的底部漏极接触。 顶部引线框架还包括用于提供与底部引线框架基本上在同一侧上的底部漏极电极的延伸部分。 在优选实施例中，功率器件封装还包括通过施加超声波能量的源极，栅极或漏极以及顶部或底部引线框架的器件金属之间的接合层。

公开(公告)号：US08564049B2

公开(公告)日：2013-10-22

申请号：US11894240

申请日：2008-03-31

申请人： Ming Sun ,  Kai Liu ,  Xiao Tian Zhang ,  Yueh Se Ho ,  Leeshawn Luo

发明人： Ming Sun ,  Kai Liu ,  Xiao Tian Zhang ,  Yueh Se Ho ,  Leeshawn Luo

IPC分类号： H01L29/66

CPC分类号： H01L29/7813 ,  H01L24/33 ,  H01L29/045 ,  H01L29/4236 ,  H01L29/66734 ,  H01L29/7811 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00

摘要： This invention discloses a power device package for containing, protecting and providing electrical contacts for a power transistor. The power device package includes a top and bottom lead frames for directly no-bump attaching to the power transistor. The power transistor is attached to the bottom lead frame as a flip-chip with a source contact and a gate contact directly no-bumping attaching to the bottom lead frame. The power transistor has a bottom drain contact attaching to the top lead frame. The top lead frame further includes an extension for providing a bottom drain electrode substantially on a same side with the bottom lead frame. In a preferred embodiment, the power device package further includes a joint layer between device metal of source, gate or drain and top or bottom lead frame, through applying ultrasonic energy. In another embodiment, a layer of conductive epoxy or adhesive, a solder paste, a carbon paste, or other types of attachment agents for direct no-bumping attaching the power transistor to one of the top and bottom lead frames.

摘要翻译： 本发明公开了一种功率器件封装，用于容纳，保护和提供功率晶体管的电触头。 功率器件封装包括用于直接不连接到功率晶体管的顶部和底部引线框架。 功率晶体管作为具有源极接触的倒装芯片附接到底部引线框架，并且栅极接触件直接地不连接到底部引线框架上。 功率晶体管具有附接到顶部引线框架的底部漏极接触。 顶部引线框架还包括用于提供与底部引线框架基本上在同一侧上的底部漏极电极的延伸部分。 在优选实施例中，功率器件封装还包括通过施加超声波能量的源极，栅极或漏极以及顶部或底部引线框架的器件金属之间的接合层。 在另一个实施方案中，导电环氧树脂或粘合剂层，焊膏，碳糊或其它类型的附着剂用于将功率晶体管附接到顶引线框架和底引线框架之一的直接无凸起。

公开(公告)号：US20080233679A1

公开(公告)日：2008-09-25

申请号：US12154537

申请日：2008-05-22

申请人： Leeshawn Luo ,  Kai Liu ,  Ming Sun ,  Xiao Tian Zhang

发明人： Leeshawn Luo ,  Kai Liu ,  Ming Sun ,  Xiao Tian Zhang

IPC分类号： H01L21/58

CPC分类号： H01L21/568 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/49524 ,  H01L24/40 ,  H01L24/73 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/73253 ,  H01L2224/73255 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/37099 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor package and method for making a semiconductor package are disclosed. The semiconductor package has a top surface and a mounting surface and includes a die, a conducting connecting material, a plating material and an insulating material. The die has a processed surface facing towards the mounting surface of the semiconductor package. Exposed metal connections are at the processed surface of the die. The conducting connecting material is disposed on the exposed metal connections. The plating material is in contact with the conducting connecting material. The insulating material is formed around the conducting connecting material, and the plating material extends to the exterior of the insulating material.

摘要翻译： 公开了半导体封装和制造半导体封装的方法。 半导体封装具有顶表面和安装表面，并且包括管芯，导电连接材料，电镀材料和绝缘材料。 模具具有朝向半导体封装的安装表面的处理表面。 暴露的金属连接处于模具的加工表面。 导电连接材料设置在暴露的金属连接上。 电镀材料与导电连接材料接触。 绝缘材料围绕导电连接材料形成，电镀材料延伸到绝缘材料的外部。

公开(公告)号：US20080211070A1

公开(公告)日：2008-09-04

申请号：US11894240

申请日：2008-03-31

申请人： Ming Sun ,  Kai Liu ,  Xiao Tian Zhang ,  Yueh Se Ho ,  Leeshawn Luo

发明人： Ming Sun ,  Kai Liu ,  Xiao Tian Zhang ,  Yueh Se Ho ,  Leeshawn Luo

IPC分类号： H01L23/495

CPC分类号： H01L29/7813 ,  H01L24/33 ,  H01L29/045 ,  H01L29/4236 ,  H01L29/66734 ,  H01L29/7811 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00

摘要： This invention discloses a power device package for containing, protecting and providing electrical contacts for a power transistor. The power device package includes a top and bottom lead frames for directly no-bump attaching to the power transistor. The power transistor is attached to the bottom lead frame as a flip-chip with a source contact and a gate contact directly no-bumping attaching to the bottom lead frame. The power transistor has a bottom drain contact attaching to the top lead frame. The top lead frame further includes an extension for providing a bottom drain electrode substantially on a same side with the bottom lead frame. In a preferred embodiment, the power device package further includes a joint layer between device metal of source, gate or drain and top or bottom lead frame, through applying ultrasonic energy. In another embodiment, a layer of conductive epoxy or adhesive, a solder paste, a carbon paste, or other types of attachment agents for direct no-bumping attaching the power transistor to one of the top and bottom lead frames.

摘要翻译： 本发明公开了一种功率器件封装，用于容纳，保护和提供功率晶体管的电触头。 功率器件封装包括用于直接不连接到功率晶体管的顶部和底部引线框架。 功率晶体管作为具有源极接触的倒装芯片附接到底部引线框架，并且栅极接触件直接地不连接到底部引线框架上。 功率晶体管具有附接到顶部引线框架的底部漏极接触。 顶部引线框架还包括用于提供与底部引线框架基本上在同一侧上的底部漏极电极的延伸部分。 在优选实施例中，功率器件封装还包括通过施加超声波能量的源极，栅极或漏极以及顶部或底部引线框架的器件金属之间的接合层。 在另一个实施方案中，导电环氧树脂或粘合剂层，焊膏，碳糊或其它类型的附着剂用于将功率晶体管附接到顶引线框架和底引线框架之一的直接无凸起。