摘要:
A pouch type secondary battery includes a pouch having a receiving part receiving an electrolyte therein and a sealing part formed by sealing an outer circumference of the receiving part in order to seal the receiving part and an electrode tab connected to one side of the pouch so as to be protruded, and at least one partition provided between at least two pouch type secondary batteries. The partition comprises: an electrode tab supporting part supporting the electrode tab; a frame extended from the electrode tab supporting part, supporting the sealing part, and having the receiving part inserted thereinto; and a buffering pad attached to an inner side of the frame at which the receiving part is seated so as to be disposed between the frame and the receiving part. The buffering pad has a cross-sectional shape in which one side of a rectangular frame is opened.
摘要:
The present invention relates to a battery module case, and more particularly, to a battery module case in which sub-battery modules are slidably mounted in a vertical or horizontal direction, wherein each sub-battery module comprises one or more battery cells, electrode tabs extending in one direction from the respective battery cells, and a pouched type case consisting of aluminum laminate sheets for covering the surfaces of the battery cells, except for the surfaces on which the electrode tabs are formed. The battery module case of the present invention is formed into an assembly type structure to be coupled to the outer surfaces of the sub-battery modules, wherein the outer surfaces include surfaces on which the electrode tabs are formed. At least two or more sub-battery modules are stacked and arranged in parallel, such that the surfaces on which the electrode tabs are formed are aligned in the same direction.
摘要:
In a method of detecting an etch by-product, the method including forming a magnetic layer including palladium (Pd) on a substrate; etching the magnetic layer to form a magnetic layer pattern; depositing a mixture including an alkyl bromide compound on a surface of the magnetic layer pattern; and measuring a current difference between the substrate and the mixture to detect an etch by-product on the surface of the magnetic layer pattern.
摘要:
Provided is a case of pouch type cells, which is capable of stably protecting pouch type cells constituting a secondary battery used as a high power supply, and having excellent heat dissipation performance.
摘要:
A slurry composition includes an abrasive agent, an oxidizing agent, and a first adsorption inhibitor including a polyethylene oxide copolymer. A method of manufacturing a phase change memory device may include providing a substrate including an interlayer insulating film having a trench and a phase change material layer on the interlayer insulating film filling the trench, and performing chemical mechanical polishing on the phase change material layer using the slurry composition to form a phase change material pattern layer.
摘要:
Provided is a method of forming a phase change memory device, the method including washing and rinsing a phase change device structure. A phase change material layer may be formed on a semiconductor substrate. The phase change material layer may be etched so as to form a phase change device structure. The semiconductor substrate on which the phase change device structure is formed may be washed using a washing solution including a reducing agent containing fluorine (F), a pH controller, a dissolution agent and water. In addition, the semiconductor substrate on which the washing is performed may be rinsed.
摘要:
Provided is a method for transmitting/receiving data in a CAN protocol. First, it is determined whether the size of CAN message data to be transmitted exceeds the size of the data field. If the size of the CAN message data exceeds the size of the data field, the CAN message data are fragmented to generate data fragments smaller in size than the data field, A CAN data frame including a control field and a data field is generated with respect to each of the data fragments, and the generated CAN data frame is transmitted.
摘要:
A method of manufacturing a semiconductor device includes forming an insulation pattern over a substrate. The insulation pattern has at least one opening that exposes a surface of the substrate. Then, a first polysilicon layer is formed over the substrates such that the first polysilicon layer fills the opening. The first polysilicon layer also includes a void therein. An upper portion of the first polysilicon layer is removed such that void expands to a recess and the recess is exposed. A second polysilicon layer is formed over the substrate such that the second polysilicon layer fills the recess.
摘要:
Disclosed is a method for providing a target mobile station with a multimedia content such as audio or video content before a call an originating mobile station attempted to connect is answered by the target mobile station. A mobile communication network protocol for multimedia transmission between a target mobile station and a network is established before a called party receives a call, so that multimedia such as images or moving pictures may be sent to the target mobile station before the called party answers the call. In this way, the called party is able to enjoy a multimedia service before the phone call is connected. Moreover, if the multimedia is an audio or moving picture about a calling party, the called party can identify the calling party based on the multimedia.
摘要:
Methods of manufacturing a semiconductor device are provided. A trench is formed in a semiconductor substrate. A first field oxide layer is formed that partially fills the trench. The first field oxide layer defines an active region of the substrate that is adjacent to the trench. An upper portion of sidewalls of the trench extends upward beyond a surface of the first field oxide layer. A first liner is formed on the first field oxide layer and on the portion of the sidewalls of the trench that extend upward beyond the first field oxide layer. A second field oxide layer is formed on the first liner and fills the trench. The second field oxide layer and the first liner are each partially removed to expose a top adjacent surface and upper sidewalls of the trench along the active region of the substrate. A dielectric layer is formed on the exposed top adjacent surface and upper sidewalls of the trench. A gate electrode is formed on the dielectric layer.