公开(公告)号：US07641046B2

公开(公告)日：2010-01-05

申请号：US11545307

申请日：2006-10-10

申请人： Chun Chee Tsang ,  Fai Wing Luk

发明人： Chun Chee Tsang ,  Fai Wing Luk

IPC分类号： B65D85/00 ,  A45F5/00

CPC分类号： A45C11/18 ,  A45C13/008 ,  A45C2011/002 ,  A45C2011/188 ,  H04M1/18 ,  Y10S224/93

摘要： Combination case for providing a versatile protective case for a handheld device, such as a PDA. The combination case has a rigid inner shell that attaches to an outer shell with a mounting plate. The handheld device is inserted into the rigid inner shell, which is then attached to the rear panel of the outer shell. The rigid inner shell is a three-sided shell that holds the handheld device and allows free access to the LCD display and operational components on the device when the outer shell is open. A soft inner shell may be used instead of the rigid inner shell. This soft inner shell attaches to the outer shell with the mounting plate and provides a water-resistant enclosure for the device.

摘要翻译： 用于为手持设备（例如PDA）提供多功能保护壳的组合案例。 组合壳体具有刚性内壳，其附接到具有安装板的外壳。 手持装置被插入刚性内壳中，然后将其附接到外壳的后面板。 刚性内壳是一个三面的外壳，它保持手持设备，并允许当外壳打开时，可以自由进入设备的LCD显示屏和操作元件。 可以使用柔软的内壳而不是刚性内壳。 该软内壳通过安装板连接到外壳，并为设备提供防水外壳。

公开(公告)号：US20080083631A1

公开(公告)日：2008-04-10

申请号：US11545307

申请日：2006-10-10

申请人： Chun Chee Tsang ,  Fai Wing Luk

发明人： Chun Chee Tsang ,  Fai Wing Luk

IPC分类号： B65D85/00

CPC分类号： A45C11/18 ,  A45C13/008 ,  A45C2011/002 ,  A45C2011/188 ,  H04M1/18 ,  Y10S224/93

摘要： Combination case for providing a versatile protective case for a handheld device, such as a PDA. The combination case has a rigid inner shell that attaches to an outer shell with a mounting plate. The handheld device is inserted into the rigid inner shell, which is then attached to the rear panel of the outer shell. The rigid inner shell is a three-sided shell that holds the handheld device and allows free access to the LCD display and operational components on the device when the outer shell is open. A soft inner shell may be used instead of the rigid inner shell. This soft inner shell attaches to the outer shell with the mounting plate and provides a water-resistant enclosure for the device.

摘要翻译： 用于为手持设备（例如PDA）提供多功能保护壳的组合案例。 组合壳体具有刚性内壳，其附接到具有安装板的外壳。 手持装置被插入刚性内壳中，然后将其附接到外壳的后面板。 刚性内壳是一个三面的外壳，它保持手持设备，并允许当外壳打开时，可以自由进入设备的LCD显示屏和操作元件。 可以使用柔软的内壳而不是刚性内壳。 该软内壳通过安装板连接到外壳，并为设备提供防水外壳。

公开(公告)号：US20070041373A1

公开(公告)日：2007-02-22

申请号：US11206085

申请日：2005-08-18

申请人： Kar-Wing Lor ,  Wing Luk ,  Kwan Shum

发明人： Kar-Wing Lor ,  Wing Luk ,  Kwan Shum

IPC分类号： H04L12/66

CPC分类号： H04L45/00 ,  H04L29/06027 ,  H04L47/20 ,  H04L47/2416 ,  H04L47/32 ,  H04L65/1069 ,  H04M3/42314 ,  H04M7/006

摘要： A switching apparatus for switching packetized voice traffic between a plurality of communication devices, the switching apparatus comprises a multi-layer switch, a plurality of communication ports, control means and ingress processing means, said packetized voice traffic comprises call control packets and medium packets which are exchanged between the communication devices via said communication ports, wherein medium packet traffic from a first communication device to a second communication device is split into a first call segment and a second call segment, the first call segment originates from said first communication devices and terminates at said switching apparatus, the second call segment originates from said switching apparatus and terminates at said second communication device, each medium packet from said first communication device is processed by said ingress processing means of said switching apparatus before onward transmission to said second communication device.

摘要翻译： 一种用于在多个通信设备之间切换分组语音业务的交换设备，所述交换设备包括多层交换机，多个通信端口，控制装置和入口处理装置，所述分组语音业务包括呼叫控制分组和媒体分组， 经由所述通信端口在通信设备之间交换，其中从第一通信设备到第二通信设备的中分组业务被分为第一呼叫段和第二呼叫段，第一呼叫段来自所述第一通信设备并终止 在所述交换装置中，所述第二呼叫段起始于所述交换设备，并终止于所述第二通信设备，所述第一通信设备的每个媒体分组由所述交换设备的所述入口处理装置在向前发送到所述第二通信设备之前进行处理。

公开(公告)号：US20060039179A1

公开(公告)日：2006-02-23

申请号：US11248863

申请日：2005-10-12

申请人： Wing Luk ,  Robert Dennard ,  Stephen Kosonocky

发明人： Wing Luk ,  Robert Dennard ,  Stephen Kosonocky

IPC分类号： G11C11/24

CPC分类号： G11C5/063 ,  G11C11/406 ,  G11C11/4074 ,  G11C2207/104

摘要： An integrated circuit, such as a memory macro, includes multiple power rails supporting first and second voltage differentials, with the second voltage differential being smaller than the first voltage differential. Signal lines in the integrated circuit are driven with the small voltage swing, which is generated by small swing circuits. The integrated circuit further includes regeneration circuits, which are receiving small voltage swing inputs and are outputting first, or full voltage swings. The application of the small voltage swing to the signal lines saves power in the integrated circuit. A wide bandwidth, full-wordline I/O, memory integrated circuit has simultaneously operable connection paths between essentially all the memory cells that are attached to the same wordline and the corresponding I/O terminals, and it has a single ended data-line structure.

摘要翻译： 诸如存储器宏的集成电路包括支持第一和第二电压差的多个电源轨，第二电压差小于第一电压差。 集成电路中的信号线由小的摆动电路产生的小电压摆动驱动。 集成电路还包括正在接收小电压摆幅输入并且正在输出第一或全电压摆幅的再生电路。 将小电压摆幅应用于信号线节省了集成电路中的功率。 宽带宽全字I / O存储器集成电路具有在连接到相同字线和对应的I / O端子的基本上所有存储单元之间的同时可操作的连接路径，并且具有单端数据线结构 。

公开(公告)号：US20060198181A1

公开(公告)日：2006-09-07

申请号：US11067797

申请日：2005-02-28

申请人： Wing Luk ,  Leland Chang

发明人： Wing Luk ,  Leland Chang

IPC分类号： G11C11/00

CPC分类号： G11C11/413

摘要： A new type of static RAM cell is disclosed that is based on a gated diode and its voltage amplification characteristic. The cell combines the advantages of a static RAM, in which data refresh is not needed, and those of gated diode cells, which are scalable to low voltages, have high signal to noise ratio, high signal margin, and tolerance to process variations, to form a single high performance static memory cell. This new cell has independent read and write paths, which allow for separate optimization of the read (R) and write (W) events, and enable dual-port R/W operation. Furthermore, storage node disturbance during the read and write operations are eliminated, which greatly improves cell stability and scalability for future technologies.

摘要翻译： 公开了一种基于门控二极管及其电压放大特性的新型静态RAM单元。 该单元结合了不需要数据刷新的静态RAM和可扩展到低电压的门控二极管单元的优点具有高信噪比，高信号余量和对工艺变化的公差， 形成单个高性能静态存储单元。 这个新单元格具有独立的读写路径，允许单独优化读（R）和写（W）事件，并启用双端口R / W操作。 此外，消除了在读取和写入操作期间的存储节点干扰，这大大地改善了用于未来技术的小区稳定性和可扩展性。

公开(公告)号：US20060050581A1

公开(公告)日：2006-03-09

申请号：US10933706

申请日：2004-09-03

申请人： Wing Luk ,  Leland Chang ,  Robert Dennard ,  Robert Montoye

发明人： Wing Luk ,  Leland Chang ,  Robert Dennard ,  Robert Montoye

IPC分类号： G11C7/00

CPC分类号： G11C7/065 ,  G11C7/06 ,  H03F1/56 ,  H03F3/10 ,  H03F3/347 ,  H03F2200/183

摘要： A sense amplifier circuit comprises (1) an isolation device comprising a control terminal and first and second terminals, the first terminal of the isolation device coupled to a signal line, (2) a gated diode comprising first and second terminals, the first terminal of the gated diode coupled to the second terminal of the isolation device, and the second terminal of the gated diode coupled to a set line; and (3) control circuitry coupled to the control terminal of the isolation device and adapted to control voltage on the control terminal of the isolation device in order to enable and disable the isolation device. A latch circuit further comprises a precharge device comprising a control terminal and first and second terminals, the first terminal of the precharge device coupled to a power supply voltage, and the second terminal of the precharge device coupled to the first terminal of the isolation device.

公开(公告)号：US20050145895A1

公开(公告)日：2005-07-07

申请号：US10751714

申请日：2004-01-05

申请人： Wing Luk ,  Robert Dennard

发明人： Wing Luk ,  Robert Dennard

IPC分类号： G11C7/06 ,  H01L27/08 ,  H01L29/739 ,  H03F1/56 ,  H01L21/336 ,  H01L29/94

CPC分类号： H03F1/56 ,  G11C7/06 ,  H01L27/0811 ,  H01L29/7391 ,  H03F2200/183

摘要： A circuit comprises a control line and a two terminal semiconductor device having first and second terminals. The first terminal is coupled to a signal line, and the second terminal is coupled to the control line. The two terminal semiconductor device is adapted to have a capacitance when a voltage on the first terminal relative to the second terminal is above a threshold voltage and to have a smaller capacitance when a voltage on the first terminal relative to the second terminal is below the threshold voltage. The control line is coupled to a control signal and the signal line is coupled to a signal and is output of the circuit. A signal is placed on the signal line and voltage on the control line is modified (e.g., raised in the case of n-type devices, or lowered for a p-type devices). When the signal falls below the threshold voltage, the two terminal semiconductor device acts as a very small capacitor and the output of the circuit will be a small value. When the signal is above the threshold voltage, the two terminal semiconductor device acts as a large capacitor and the output of the circuit will be influenced by both the value of the signal and the value of the modified voltage on the control line and therefore the signal will be amplified.

摘要翻译： 电路包括控制线和具有第一和第二端子的两端子半导体器件。 第一端子耦合到信号线，并且第二端子耦合到控制线。 当第一端子上相对于第二端子的电压高于阈值电压时，两端子半导体器件适于具有电容，并且当第一端子上相对于第二端子的电压低于阈值时具有较小的电容 电压。 控制线耦合到控制信号，并且信号线耦合到信号并且是电路的输出。 将信号放置在信号线上，并且控制线上的电压被修改（例如在n型器件的情况下升高，或者对于p型器件降低）。 当信号低于阈值电压时，两端子半导体器件作为一个非常小的电容器，并且电路的输出将是一个小的值。 当信号高于阈值电压时，两端子半导体器件用作大电容器，电路的输出将受到信号值和控制线上修改电压值的影响，因此信号 将被放大。

公开(公告)号：US20050073871A1

公开(公告)日：2005-04-07

申请号：US10680348

申请日：2003-10-07

申请人： Wing Luk ,  Robert Dennard

发明人： Wing Luk ,  Robert Dennard

IPC分类号： G11C11/405 ,  H01L27/108 ,  G11C11/24

CPC分类号： H01L27/108 ,  G11C11/405

摘要： A random access memory (RAM) circuit is coupled to a write control line, a read control line, and one or more bitlines, and includes a write switch having a control terminal and first and second terminals. The first terminal of the write switch is coupled to the one or more bitlines, and the control terminal of the write switch is coupled to the write control line. The circuit includes a charge-storage device having first and second terminals, wherein a first terminal of the charge-storage device is coupled to the second terminal of the write switch and a second terminal of the charge-storage device is coupled to the read control line. The circuit includes a read switch having a control terminal and first and second terminals. The control terminal of the read switch is coupled to the first terminal of the charge-storage device and is coupled to the second terminal of the write switch. The first terminal of the read switch is coupled to the one or more bitlines, and the second terminal of the read switch coupled to ground. The circuit may be implemented through a number of disclosed semiconductor memory devices.

摘要翻译： 随机存取存储器（RAM）电路耦合到写入控制线，读取控制线和一个或多个位线，并且包括具有控制端子和第一和第二端子的写入开关。 写开关的第一端耦合到一个或多个位线，并且写开关的控制端耦合到写控制线。 该电路包括具有第一和第二端子的电荷存储装置，其中电荷存储装置的第一端子耦合到写入开关的第二端子，并且电荷存储装置的第二端子耦合到读取控制 线。 电路包括具有控制端子和第一和第二端子的读取开关。 读开关的控制端耦合到电荷存储装置的第一端并耦合到写开关的第二端。 读开关的第一端耦合到一个或多个位线，并且读开关的第二端耦合到地。 电路可以通过许多公开的半导体存储器件实现。

公开(公告)号：US20070249115A1

公开(公告)日：2007-10-25

申请号：US11408752

申请日：2006-04-21

申请人： Wing Luk ,  Jin Cai

发明人： Wing Luk ,  Jin Cai

IPC分类号： H01L21/8244 ,  H01L29/94

CPC分类号： G11C11/4097 ,  G11C7/18 ,  G11C8/16 ,  G11C11/405 ,  H01L21/28079 ,  H01L21/84 ,  H01L27/10873 ,  H01L29/495

摘要： A dynamic random access memory cell is disclosed that comprises a capacitive storage device and a write access transistor. The write access transistor is operatively coupled to the capacitive storage device and has a gate stack that comprises a high-K dielectric, wherein the high-K dielectric has a dielectric constant greater than a dielectric constant of silicon dioxide. Also disclosed are a memory array using the cells, a computing apparatus using the memory array, a method of storing data, and a method of manufacturing.

摘要翻译： 公开了一种动态随机存取存储器单元，其包括电容存储器件和写入存取晶体管。 写入存取晶体管可操作地耦合到电容存储器件，并且具有包括高K电介质的栅极堆叠，其中高K电介质具有大于二氧化硅介电常数的介电常数。 还公开了使用这些单元的存储器阵列，使用存储器阵列的计算装置，存储数据的方法和制造方法。

公开(公告)号：US20070164359A1

公开(公告)日：2007-07-19

申请号：US11334170

申请日：2006-01-18

申请人： Leland Chang ,  Robert Dennard ,  David Fried ,  Wing Luk

发明人： Leland Chang ,  Robert Dennard ,  David Fried ,  Wing Luk

IPC分类号： H01L27/12

CPC分类号： H01L29/7391 ,  H01L21/823456 ,  H01L21/823462 ,  H01L21/823487

摘要： An area-efficient gated diode includes a semiconductor layer of a first conductivity type, an active region of a second conductivity type formed in the semiconductor layer proximate an upper surface of the semiconductor layer, and at least one trench electrode extending substantially vertically through the active region and at least partially into the semiconductor layer. A first terminal of the gated diode is electrically connected to the trench electrode, and at least a second terminal is electrically connected to the active region. The gated diode is operative in one of at least a first mode and a second mode as a function of a voltage potential applied between the first and second terminals. The first mode is characterized by the creation of an inversion layer in the semiconductor layer substantially surrounding the trench electrode. The gated diode has a first capacitance in the first mode and a second capacitance in the second mode, the first capacitance being substantially greater than the second capacitance.

摘要翻译： 区域有效的门控二极管包括第一导电类型的半导体层，形成在靠近半导体层的上表面的半导体层中的第二导电类型的有源区，以及至少一个沟槽电极，该沟槽电极基本垂直延伸穿过活性层 并且至少部分地进入半导体层。 门控二极管的第一端子电连接到沟槽电极，并且至少第二端子电连接到有源区域。 门控二极管作为施加在第一和第二端子之间的电压电位的函数的至少第一模式和第二模式中的一个工作。 第一模式的特征在于在基本上围绕沟槽电极的半导体层中产生反型层。 门控二极管具有第一模式中的第一电容和第二模式中的第二电容，第一电容基本上大于第二电容。