公开(公告)号：US20060194407A1

公开(公告)日：2006-08-31

申请号：US11382500

申请日：2006-05-10

申请人： Kai-Ming Ching ,  Chia Lin ,  Wen-Hsiang Tseng ,  Ta-Min Lin ,  Yen-Ming Chen ,  Hsin-Hui Lee ,  Chao-Yuan Su ,  Wen-Hsiang Tseng

发明人： Kai-Ming Ching ,  Chia Lin ,  Wen-Hsiang Tseng ,  Ta-Min Lin ,  Yen-Ming Chen ,  Hsin-Hui Lee ,  Chao-Yuan Su ,  Wen-Hsiang Tseng

IPC分类号： H01L21/76

CPC分类号： H01L23/544 ,  H01L21/76838 ,  H01L24/11 ,  H01L24/12 ,  H01L2223/54453 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2224/05647 ,  H01L2924/00014 ,  H01L2224/05671 ,  H01L2224/05124 ,  H01L2224/05147

摘要： A new method is provided for the processing of metals, most notably copper, such that damage to exposed surfaces of these metals is prevented. During a step of semiconductor processing, which results in exposing a metal surface to a wet substance having a pH value, a voltage is applied to the metal that is exposed. The value of the applied voltage can, dependent on the value of the pH constant of the wet substance, be selected such that the exposed metal surface is protected against alkaline effects of the wet substance.

摘要翻译： 提供了一种新的方法来处理金属，特别是铜，以防止这些金属暴露表面的损坏。 在半导体加工的步骤中，导致将金属表面暴露于具有pH值的湿物质的步骤中，向暴露的金属施加电压。 施加电压的值可以根据湿物质的pH常数的值来选择，使得暴露的金属表面被保护免受湿物质的碱性影响。

公开(公告)号：US07468321B2

公开(公告)日：2008-12-23

申请号：US11382500

申请日：2006-05-10

申请人： Kai-Ming Ching ,  Chia-Fu Lin ,  Wen-Hsiang Tseng ,  Ta-Min Lin ,  Yen-Ming Chen ,  Hsin-Hui Lee ,  Chao-Yuan Su ,  Wen-Hsiang Tseng

发明人： Kai-Ming Ching ,  Chia-Fu Lin ,  Wen-Hsiang Tseng ,  Ta-Min Lin ,  Yen-Ming Chen ,  Hsin-Hui Lee ,  Chao-Yuan Su ,  Wen-Hsiang Tseng

IPC分类号： H01L21/44

CPC分类号： H01L23/544 ,  H01L21/76838 ,  H01L24/11 ,  H01L24/12 ,  H01L2223/54453 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2224/05647 ,  H01L2924/00014 ,  H01L2224/05671 ,  H01L2224/05124 ,  H01L2224/05147

摘要： A new method is provided for the processing of metals, most notably copper, such that damage to exposed surfaces of these metals is prevented. During a step of semiconductor processing, which results in exposing a metal surface to a wet substance having a pH value, a voltage is applied to the metal that is exposed. The value of the applied voltage can, dependent on the value of the pH constant of the wet substance, be selected such that the exposed metal surface is protected against alkaline effects of the wet substance.

摘要翻译： 提供了一种新的方法来处理金属，特别是铜，以防止这些金属暴露表面的损坏。 在半导体加工的步骤中，导致将金属表面暴露于具有pH值的湿物质的步骤中，向暴露的金属施加电压。 施加电压的值可以根据湿物质的pH常数的值来选择，使得暴露的金属表面被保护免受湿物质的碱性影响。

公开(公告)号：US07781140B2

公开(公告)日：2010-08-24

申请号：US11465375

申请日：2006-08-17

申请人： Chih-Min Tseng ,  Hsiu-Mei Yu ,  Wen-Hsiang Tseng ,  Chia-Jen Cheng ,  Yu-Lung Feng ,  Tung-Wen Hsieh

发明人： Chih-Min Tseng ,  Hsiu-Mei Yu ,  Wen-Hsiang Tseng ,  Chia-Jen Cheng ,  Yu-Lung Feng ,  Tung-Wen Hsieh

IPC分类号： G03F7/42 ,  B08B3/08 ,  B08B3/10

CPC分类号： G03F7/422

摘要： A method for removing dry film resist (DFR) from a fine pitch solder bump array on a semiconductor wafer provides for pre-soaking the wafer in a chemical bath then turbulently exposing the wafer to a chemical solution, both steps taking place in batch processing with the wafers processed in a vertical position. The wafers are then individually processed through a chemical spinning operation in which a chemical solution is dispensed from a spray nozzle while motion such as spinning is imparted the horizontally disposed wafer. The spin speed of the chemical spraying process may then be increased to accelerate physical removal of residue. Deionized water rinsing and spin-drying provide a solder bump array void of any DFR or other residuals.

摘要翻译： 从半导体晶片上的细间距焊料凸点阵列去除干膜抗蚀剂（DFR）的方法提供将晶片预浸在化学浴中，然后将晶片湍流地暴露于化学溶液，这两个步骤在批处理中发生， 晶片在垂直位置处理。 然后通过化学纺丝操作单独处理晶片，其中从喷雾喷嘴分配化学溶液，同时使诸如旋转的运动赋予水平设置的晶片。 然后可以增加化学喷涂过程的旋转速度以加速残留物的物理去除。 去离子水冲洗和旋转干燥提供无任何DFR或其他残留物的焊料凸块阵列。

公开(公告)号：US20100168929A1

公开(公告)日：2010-07-01

申请号：US12539761

申请日：2009-08-12

申请人： Wen-Hsiang Tseng ,  Cheng-Ting Lin

发明人： Wen-Hsiang Tseng ,  Cheng-Ting Lin

IPC分类号： G06F1/32 ,  G06F1/28

CPC分类号： G06Q10/06 ,  G06Q50/06

摘要： A method of setting a demand threshold is provided. The method comprises: (a) a control unit arranging a plurality of demand data in a descending or an ascending order as a curve; (b) the control unit connecting a maximum demand datum and a minimum demand datum with a line; and (c) the control unit setting a demand datum with a longest perpendicular distance to the line as a demand threshold.

摘要翻译： 提供了一种设置需求阈值的方法。 该方法包括：（a）以降序或升序排列多个需求数据作为曲线的控制单元; （b）控制单元将最大需求基准和最小需求基准与一条线连接; 以及（c）所述控制单元将与所述线的最长垂直距离的需求基准设置为需求阈值。

公开(公告)号：US07276454B2

公开(公告)日：2007-10-02

申请号：US10286626

申请日：2002-11-02

申请人： Kai-Ming Ching ,  Chia Fu Lin ,  Wen-Hsiang Tseng ,  Ta-Min Lin ,  Yen-Ming Chen ,  Hsin-Hui Lee ,  Chao-Yuan Su ,  Li-Chih Chen

发明人： Kai-Ming Ching ,  Chia Fu Lin ,  Wen-Hsiang Tseng ,  Ta-Min Lin ,  Yen-Ming Chen ,  Hsin-Hui Lee ,  Chao-Yuan Su ,  Li-Chih Chen

IPC分类号： H01L21/302

CPC分类号： H01L23/544 ,  H01L21/76838 ,  H01L24/11 ,  H01L24/12 ,  H01L2223/54453 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2224/05647 ,  H01L2924/00014 ,  H01L2224/05671 ,  H01L2224/05124 ,  H01L2224/05147

摘要： A new method is provided for the processing of metals, most notably copper, such that damage to exposed surfaces of these metals is prevented. During a step of semiconductor processing, which results in exposing a metal surface to a wet substance having a pH value, a voltage is applied to the metal that is exposed. The value of the applied voltage can, dependent on the value of the pH constant of the wet substance, be selected such that the exposed metal surface is protected against alkaline effects of the wet substance.

摘要翻译： 提供了一种新的方法来处理金属，特别是铜，以防止这些金属暴露表面的损坏。 在半导体加工的步骤中，导致将金属表面暴露于具有pH值的湿物质的步骤中，向暴露的金属施加电压。 施加电压的值可以根据湿物质的pH常数的值来选择，使得暴露的金属表面被保护免受湿物质的碱性影响。

公开(公告)号：US06691738B2

公开(公告)日：2004-02-17

申请号：US09996335

申请日：2001-11-21

申请人： Wen-Chang Kuo ,  Szu-Yao Wang ,  Wen-Hsiang Tseng

发明人： Wen-Chang Kuo ,  Szu-Yao Wang ,  Wen-Hsiang Tseng

IPC分类号： G05D700

CPC分类号： B67D7/0288 ,  B67D7/344 ,  Y10T137/86332

摘要： The present invention is directed to a filler assembly for dispensing liquid to and from a container capable of storing an indicated liquid. The filler assembly has a portable part and a stationary part cooperating to provide a sealed dispensing means for communicating an indicated liquid from an indicated liquid source to a container and for safely communicating the indicated liquid from the container to another location. The portable part and the stationary part are adapted to sealably mate together and further provide means for preventing misassembly of the two parts. The portable part provides dispensing means capable of communicating the liquid from the stationary part to a remote location. The stationary part is adapted to further sealably mate and communicate with a container capable of storing an indicated liquid.

摘要翻译： 本发明涉及一种用于将液体分配到能够存储指定液体的容器中的填充器组件。 填充器组件具有便携式部件和固定部件，其配合以提供密封的分配装置，用于将指示的液体从指示的液体源传送到容器并且用于将指示的液体从容器安全地传递到另一位置。 便携式部件和固定部件适于密封地配合在一起，并且还提供用于防止两个部件的错误组装的装置。 便携式部件提供能够将液体从静止部分传送到远程位置的分配装置。 固定部分适于进一步密封地配合并与能够储存指定液体的容器连通。

公开(公告)号：US08311680B2

公开(公告)日：2012-11-13

申请号：US12539761

申请日：2009-08-12

申请人： Wen-Hsiang Tseng ,  Cheng-Ting Lin

发明人： Wen-Hsiang Tseng ,  Cheng-Ting Lin

IPC分类号： G05B15/00 ,  G05B11/01 ,  G04F1/00 ,  G05D17/00 ,  G06F7/00

CPC分类号： G06Q10/06 ,  G06Q50/06

摘要： A method of setting a demand threshold is provided. A control unit arranges a plurality of demand data in a descending or an ascending order as a curve. The control unit connects a maximum demand datum and a minimum demand datum with a line. The control unit sets a demand datum with a longest perpendicular distance to the line as a demand threshold.

摘要翻译： 提供了一种设置需求阈值的方法。 控制单元以降序或升序排列多个需求数据作为曲线。 控制单元将最大需求数据和最小需求基准线连接起来。 控制单元将与线路最长垂直距离的需求基准设置为需求阈值。

公开(公告)号：US20100114401A1

公开(公告)日：2010-05-06

申请号：US12578985

申请日：2009-10-14

申请人： Wen-Hsiang Tseng ,  Cheng-Ting Lin

发明人： Wen-Hsiang Tseng ,  Cheng-Ting Lin

IPC分类号： G05D23/19 ,  G06Q10/00 ,  G06N5/02 ,  G06F17/30 ,  G06F17/40

CPC分类号： F24F11/30 ,  B60H1/00742 ,  F24F2110/10 ,  F24F2110/12 ,  F24F2120/10 ,  G06Q30/0202

摘要： A method of predicting the level of customer amount is provided. The method at least comprises the steps of: (a) a counter counting person-time within a time period; (b) a processor checking whether a referenced customer amount of the time period is stored in a database if being at the beginning of the time period; and (c) the processor estimating the level of customer amount according to the referenced customer amount of the time period if the referenced customer amount of the time period is stored in a database.

摘要翻译： 提供了一种预测客户数量水平的方法。 该方法至少包括以下步骤：（a）在一段时间内计数个人时间的计数器; （b）处理器，如果处于该时间段的开头，则检查所述时间段的参考客户数量是否被存储在数据库中; 以及（c）如果将参考的时间段的客户量存储在数据库中，则处理器根据参考的时间段的客户量来估计客户金额的水平。

公开(公告)号：US06797075B2

公开(公告)日：2004-09-28

申请号：US10143053

申请日：2002-05-09

申请人： Kai-Ming Ching ,  Chia-Fu Lin ,  Wen-Hsiang Tseng ,  Ta-Min Lin ,  Yen-Ming Chen ,  Hsin-Hui Lee

发明人： Kai-Ming Ching ,  Chia-Fu Lin ,  Wen-Hsiang Tseng ,  Ta-Min Lin ,  Yen-Ming Chen ,  Hsin-Hui Lee

IPC分类号： B08B104

CPC分类号： H01L21/67313 ,  B08B3/10 ,  H01L21/67057

摘要： A Ferris wheel-like stripping or cleaning mechanism that can be used in semiconductor fabrication, such as in photoresist or other stripping, or wafer or other cleaning, is disclosed. A stripping mechanism can include a container to hold a chemical, such as a photoresist stripping chemical, a wafer cleaning chemical, or another type of chemical. The mechanism can also include a component to move semiconductor wafers through the chemical in the container in a Ferris wheel-like motion. The component may include wafer holders for the wafers that are swivably mounted about an axis of rotation. As the one or more wafer holders rotate about the axis of rotation through the chemical in the container, the wafer holders remain in a substantially constant vertical and horizontal orientation.

摘要翻译： 公开了可用于半导体制造中的摩擦轮式剥离或清洁机构，例如在光致抗蚀剂或其它剥离，或晶片或其它清洁中。 剥离机构可以包括容纳化学物质的容器，例如光刻胶剥离化学品，晶片清洁化学品或其它类型的化学品。 该机构还可以包括以摩天轮状运动将半导体晶片移动通过容器中的化学物质的部件。 组件可以包括围绕旋转轴线可旋转地安装的用于晶片的晶片保持器。 当一个或多个晶片保持器围绕容器中的化学物质的旋转轴旋转时，晶片保持器保持基本恒定的垂直和水平取向。

公开(公告)号：US5820689A

公开(公告)日：1998-10-13

申请号：US767117

申请日：1996-12-04

申请人： Wen-Hsiang Tseng ,  B. J. Chang ,  Kuo-Liang Lu

发明人： Wen-Hsiang Tseng ,  B. J. Chang ,  Kuo-Liang Lu

IPC分类号： B08B9/00 ,  H01L21/00 ,  B08B3/04 ,  B08B9/08 ,  C23G1/02

CPC分类号： H01L21/67057 ,  B08B9/00 ,  Y10S134/902

摘要： A wet chemical treatment system for processing semiconductor wafers that does not have the problem of cracking or other damages occurring in the system during a cleaning process where a strong acid and water are mixed and pressure and heat are generated. The system includes an additional filing system such that only an outer tank for the processing liquid is filled after the system is cleaned so that pressure and heat generated by the reaction between acid and water can be released into an empty inner tank and thus avoiding damages caused by the heat and pressure. A method for cleaning such system is further disclosed.

摘要翻译： 一种用于处理半导体晶片的湿化学处理系统，其在产生强酸和水混合并产生压力和热量的清洁过程中不具有在系统中发生的破裂或其它损坏的问题。 该系统包括附加的归档系统，使得仅在系统被清洁之后才填充用于处理液体的外罐，使得由酸和水之间的反应产生的压力和热量可以释放到空的内罐中，从而避免造成的损坏 受热和压力。 进一步公开了一种清洁该系统的方法。