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    Method of fabricating a MEMS microphone with trenches serving as vent pattern
    1.
    发明授权
    Method of fabricating a MEMS microphone with trenches serving as vent pattern 有权
    制造具有沟槽作为排气孔图案的MEMS麦克风的方法

    公开(公告)号：US08865500B2

    公开(公告)日：2014-10-21

    申请号：US12699797

    申请日：2010-02-03

    申请人： Chien-Hsin Huang ,  Bang-Chiang Lan ,  Hui-Min Wu ,  Tzung-I Su ,  Chao-An Su ,  Tzung-Han Tan

    发明人： Chien-Hsin Huang ,  Bang-Chiang Lan ,  Hui-Min Wu ,  Tzung-I Su ,  Chao-An Su ,  Tzung-Han Tan

    IPC分类号： H01L21/30

    CPC分类号： H01L21/30

    摘要： A method of fabricating a MEMS microphone includes: first providing a substrate having a first surface and a second surface. The substrate is divided into a logic region and a MEMS region. The first surface of the substrate is etched to form a plurality of first trenches in the MEMS region. An STI material is then formed in the plurality of first trenches. Subsequently, the second surface of the substrate is etched to form a second trench in the MEMS region, wherein the second trench connects with each of the first trenches. Finally, the STI material in the first trenches is removed.

    摘要翻译： 一种制造MEMS麦克风的方法包括：首先提供具有第一表面和第二表面的基底。 衬底分为逻辑区和MEMS区。 蚀刻衬底的第一表面以在MEMS区域中形成多个第一沟槽。 然后在多个第一沟槽中形成STI材料。 随后，蚀刻衬底的第二表面以在MEMS区域中形成第二沟槽，其中第二沟槽与每个第一沟槽连接。 最后，第一个沟槽中的STI材料被去除。

    METHOD OF FABRICATING A MEMS MICROPHONE
    5.
    发明申请
    METHOD OF FABRICATING A MEMS MICROPHONE 有权
    制造MEMS麦克风的方法

    公开(公告)号：US20110189804A1

    公开(公告)日：2011-08-04

    申请号：US12699797

    申请日：2010-02-03

    申请人： Chien-Hsin Huang ,  Bang-Chiang Lan ,  Hui-Min Wu ,  Tzung-I Su ,  Chao-An Su ,  Tzung-Han Tan

    发明人： Chien-Hsin Huang ,  Bang-Chiang Lan ,  Hui-Min Wu ,  Tzung-I Su ,  Chao-An Su ,  Tzung-Han Tan

    IPC分类号： H01L21/30

    CPC分类号： H01L21/30

    摘要： A method of fabricating a MEMS microphone includes: first providing a substrate having a first surface and a second surface. The substrate is divided into a logic region and a MEMS region. The first surface of the substrate is etched to form a plurality of first trenches in the MEMS region. An STI material is then formed in the plurality of first trenches. Subsequently, the second surface of the substrate is etched to form a second trench in the MEMS region, wherein the second trench connects with each of the first trenches. Finally, the STI material in the first trenches is removed.

    摘要翻译： 一种制造MEMS麦克风的方法包括：首先提供具有第一表面和第二表面的基底。 衬底分为逻辑区和MEMS区。 蚀刻衬底的第一表面以在MEMS区域中形成多个第一沟槽。 然后在多个第一沟槽中形成STI材料。 随后，蚀刻衬底的第二表面以在MEMS区域中形成第二沟槽，其中第二沟槽与每个第一沟槽连接。 最后，第一个沟槽中的STI材料被去除。

    FOCUSING MEMBER AND OPTOELECTRONIC DEVICE
    7.
    发明申请
    FOCUSING MEMBER AND OPTOELECTRONIC DEVICE 有权
    聚焦会员和光电设备

    公开(公告)号：US20110097033A1

    公开(公告)日：2011-04-28

    申请号：US12605891

    申请日：2009-10-26

    申请人： Tzung-I Su ,  Ming-I Wang ,  Bang-Chiang Lan ,  Te-Kan Liao ,  Chao-An Su ,  Hui-Min Wu ,  Chien-Hsin Huang ,  Tzung-Han Tan ,  Min Chen ,  Meng-Jia Lin

    发明人： Tzung-I Su ,  Ming-I Wang ,  Bang-Chiang Lan ,  Te-Kan Liao ,  Chao-An Su ,  Hui-Min Wu ,  Chien-Hsin Huang ,  Tzung-Han Tan ,  Min Chen ,  Meng-Jia Lin

    IPC分类号： G02B6/12 ,  G02B1/10 ,  G02B6/32

    CPC分类号： G02B6/12004 ,  G02B6/305

    摘要： A focusing member and an optoelectronic device having the same are provided. The focusing member includes multiple levels of conductive plugs and multiple levels of conductive layers that together form an inversed half-boat shape. The optoelectronic device includes a bottom layer, an optical waveguide above the bottom layer, a dielectric layer covering the optical waveguide, and the above focusing member disposed at an edge of the optoelectronic device and located in the dielectric layer above the optical waveguide. A wider end of the inversed half-boat shape of the focusing member faces the outside of the optoelectronic device. The refractive indexes of the bottom layer and the dielectric layer are smaller than that of the optical waveguide.

    摘要翻译： 提供聚焦构件和具有该聚焦构件的光电子器件。 聚焦构件包括多个级别的导电插塞和多层导电层，这些导电层一起形成反转的半舟形状。 光电子器件包括底层，底层上方的光波导，覆盖光波导的电介质层，以及设置在光电子器件的边缘并位于光波导上方的电介质层中的上述聚焦构件。 聚焦构件的反转半舟形的较宽端面向光电器件的外侧。 底层和电介质层的折射率小于光波导的折射率。

    MEMS DEVICE AND METHOD FOR FABRICATING THE SAME
    8.
    发明申请
    MEMS DEVICE AND METHOD FOR FABRICATING THE SAME 有权
    MEMS器件及其制造方法

    公开(公告)号：US20110057288A1

    公开(公告)日：2011-03-10

    申请号：US12943269

    申请日：2010-11-10

    申请人： Tzung-Han TAN ,  Bang-Chiang LAN ,  Ming-I WANG ,  Chien-Hsin HUANG ,  Meng-Jia LIN

    发明人： Tzung-Han TAN ,  Bang-Chiang LAN ,  Ming-I WANG ,  Chien-Hsin HUANG ,  Meng-Jia LIN

    IPC分类号： H01L29/06 ,  H01L21/71

    CPC分类号： B81C1/00246 ,  B81B3/0072 ,  B81B2203/04 ,  B81B2207/015 ,  B81C2201/0167

    摘要： A microelectromechanical system (MEMS) device and a method for fabricating the same are described. The MEMS device includes a first electrode and a second electrode. The first electrode is disposed on a substrate, and includes at least two metal layers, a first protection ring and a dielectric layer. The first protection ring connects two adjacent metal layers, so as to define an enclosed space between two adjacent metal layers. The dielectric layer is disposed in the enclosed space and connects two adjacent metal layers. The second electrode is disposed on the first electrode, wherein a cavity is formed between the first electrode and the second electrode.

    摘要翻译： 描述了微机电系统（MEMS）装置及其制造方法。 MEMS器件包括第一电极和第二电极。 第一电极设置在基板上，并且包括至少两个金属层，第一保护环和介电层。 第一保护环连接两个相邻的金属层，以便限定两个相邻金属层之间的封闭空间。 电介质层设置在封闭空间中并连接两个相邻的金属层。 第二电极设置在第一电极上，其中在第一电极和第二电极之间形成空腔。

    Image sensor device and method of fabricating the same
    9.
    发明申请
    Image sensor device and method of fabricating the same 审中-公开
    图像传感器装置及其制造方法

    公开(公告)号：US20050158897A1

    公开(公告)日：2005-07-21

    申请号：US10761992

    申请日：2004-01-21

    申请人： Jhy-Jyi Sze ,  Min-Hua Tsai ,  Tzung-Han Tan ,  Hsin-Ping Wu ,  Chia-Huei Lin

    发明人： Jhy-Jyi Sze ,  Min-Hua Tsai ,  Tzung-Han Tan ,  Hsin-Ping Wu ,  Chia-Huei Lin

    IPC分类号： H01L21/00 ,  H01L21/44 ,  H01L21/762 ,  H01L27/146 ,  H01L31/0232

    CPC分类号： H01L27/14687 ,  H01L21/76224 ,  H01L27/1463 ,  H01L27/14643

    摘要： A method of fabricating an image sensor device is disclosed. In the method, a substrate having a plurality of trenches therein is provided. A first anti-reflective layer is formed on the surfaces of the trenches. An insulating layer is filled in the trenches for forming a plurality of shallow trench isolation regions. At least one photo sensitive region is formed within the substrate between neighboring shallow trench isolation regions. A second anti-reflective layer is formed at least covering the photo sensitive region. Because the first anti-reflective layer is formed on the surfaces of the trenches, and the second anti-reflective layer is formed on the photo sensitive region, the sensitivity of the image sensor device is improved.

    摘要翻译： 公开了一种制造图像传感器装置的方法。 在该方法中，提供其中具有多个沟槽的基板。 第一抗反射层形成在沟槽的表面上。 在沟槽中填充绝缘层以形成多个浅沟槽隔离区域。 在相邻的浅沟槽隔离区域之间的衬底内形成至少一个光敏区域。 形成至少覆盖光敏区域的第二抗反射层。 因为第一抗反射层形成在沟槽的表面上，并且第二抗反射层形成在光敏区域上，所以提高了图像传感器装置的灵敏度。

    Integrated circuit having microelectromechanical system device and method of fabricating the same
    10.
    发明授权
    Integrated circuit having microelectromechanical system device and method of fabricating the same 有权
    具有微机电系统装置的集成电路及其制造方法

    公开(公告)号：US08642986B2

    公开(公告)日：2014-02-04

    申请号：US12565154

    申请日：2009-09-23

    申请人： Tzung-Han Tan ,  Bang-Chiang Lan ,  Ming-I Wang ,  Tzung-I Su ,  Chien-Hsin Huang ,  Hui-Min Wu ,  Chao-An Su ,  Min Chen ,  Meng-Jia Lin

    发明人： Tzung-Han Tan ,  Bang-Chiang Lan ,  Ming-I Wang ,  Tzung-I Su ,  Chien-Hsin Huang ,  Hui-Min Wu ,  Chao-An Su ,  Min Chen ,  Meng-Jia Lin

    IPC分类号： H01L29/84 ,  H01L21/30

    CPC分类号： B81C1/00238

    摘要： An integrated circuit (IC) having a microelectromechanical system (MEMS) device buried therein is provided. The integrated circuit includes a substrate, a metal-oxide semiconductor (MOS) device, a metal interconnect, and the MEMS device. The substrate has a logic circuit region and a MEMS region. The MOS device is located on the logic circuit region of the substrate. The metal interconnect, formed by a plurality of levels of wires and a plurality of vias, is located above the substrate to connect the MOS device. The MEMS device is located on the MEMS region, and includes a sandwich membrane located between any two neighboring levels of wires in the metal interconnect and connected to the metal interconnect.

    摘要翻译： 提供了一种其中埋有微机电系统（MEMS）器件的集成电路（IC）。 集成电路包括衬底，金属氧化物半导体（MOS）器件，金属互连和MEMS器件。 衬底具有逻辑电路区域和MEMS区域。 MOS器件位于衬底的逻辑电路区域上。 由多层电线形成的金属互连和多个通孔位于衬底上方以连接MOS器件。 MEMS器件位于MEMS区域上，并且包括位于金属互连中的任何两个相邻电平线之间并连接到金属互连的夹层膜。