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13 条记录 (耗时 0.018 秒)

    Device for and method of reducing cross talk in optical disk device
    1.
    发明授权
    Device for and method of reducing cross talk in optical disk device 失效
    减少光盘装置串扰的装置和方法

    公开(公告)号：US5373437A

    公开(公告)日：1994-12-13

    申请号：US740726

    申请日：1991-08-06

    申请人： Tsuyoshi Itoh ,  Isao Okuda ,  Hiroshi Nishikawa ,  Toshiyuki Kase ,  Ryota Ogawa ,  Masahiro Oono ,  Koichi Maruyama ,  Makoto Iki

    发明人： Tsuyoshi Itoh ,  Isao Okuda ,  Hiroshi Nishikawa ,  Toshiyuki Kase ,  Ryota Ogawa ,  Masahiro Oono ,  Koichi Maruyama ,  Makoto Iki

    IPC分类号： G02B7/28 ,  G11B7/09 ,  G11B7/095 ,  G11B7/00

    CPC分类号： G11B7/0909

    摘要： A device in which an offset is added to a focusing error signal to control an objective lens and thereby reduce the generation of cross-talk when a beam spot that is converged on an optical disk crosses over a wall of a groove of a track of the disk. By adding the offset to the focusing error signal, the objective lens is moved out of focus with the disk. Thus, the shape of a beam spot formed on a photo sensor is changed from a circle to an ellipse. A condenser lens provided for forming the beam spot is moved along the optical axis thereof in such a manner that an output of a recorded signal of the disk is at a maximum value. As a result, the objective lens is brought into focus on the disk. Thereafter, the objective lens is focused on the disk in accordance with the focusing error signal to which the offset is added, while maintaining the beam spot in the shape of an ellipse.

    摘要翻译： 一种装置，其中偏移量被加到聚焦误差信号上以控制物镜，从而当会聚在光盘上的束斑横跨在光盘的轨道的凹槽的壁上时减少串扰的产生 磁盘。 通过将偏移量加到聚焦误差信号上，物镜与光盘移出对焦。 因此，形成在光传感器上的光斑的形状从圆形变为椭圆形。 设置用于形成束斑的聚光透镜沿其光轴移动，使得盘的记录信号的输出处于最大值。 结果，将物镜聚焦在盘上。 此后，根据添加有偏移量的聚焦误差信号将物镜聚焦在光盘上，同时将光束点保持为椭圆形状。

    Semiconductor device and method for manufacturing same
    6.
    发明授权
    Semiconductor device and method for manufacturing same 有权
    半导体装置及其制造方法

    公开(公告)号：US08686480B2

    公开(公告)日：2014-04-01

    申请号：US13641442

    申请日：2011-04-06

    申请人： Tsuyoshi Itoh ,  Hiroshi Nakatsuji ,  Masahiro Fujiwara

    发明人： Tsuyoshi Itoh ,  Hiroshi Nakatsuji ,  Masahiro Fujiwara

    IPC分类号： H01L27/148

    CPC分类号： H01L31/1136 ,  G02F2001/13312 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/02675 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/78633 ,  H01L29/78636 ,  H01L31/02164 ,  H01L31/105 ,  H01L31/186 ,  H01L31/1872 ,  Y02E10/50

    摘要： Disclosed is a method for manufacturing a semiconductor device that can improve the performance of a photodiode that is formed on a same substrate as a thin film transistor without greatly deteriorating the productivity of the semiconductor device. On a glass substrate 30, a base layer 31 having a recess 33b on the surface is formed, and on the base layer 31, an amorphous silicon thin film 42 is formed. The amorphous silicon thin film 42 is melted to form a crystalline silicon thin film 43, while moving the molten silicon into the recess 33b. Of the silicon thin film 43, a silicon film 11 that constitutes a portion of a thin film transistor 10 is formed of the silicon thin film 43 in a part other than the recess 33b, while a silicon film 21 that constitutes a portion of a photodiode 20 is formed of the silicon thin film 43 in the recess 33b.

    摘要翻译： 公开了一种半导体器件的制造方法，其可以提高与薄膜晶体管形成在同一衬底上的光电二极管的性能，而不会使半导体器件的生产率大大降低。 在玻璃基板30上形成表面上具有凹部33b的基底层31，在基底层31上形成非晶硅薄膜42。 将熔融硅移动到凹部33b中，使非晶硅薄膜42熔融而形成结晶硅薄膜43。 在硅薄膜43中，构成薄膜晶体管10的一部分的硅膜11由除了凹部33b以外的部分的硅薄膜43形成，而构成光电二极管的一部分的硅膜21 20由凹槽33b中的硅薄膜43形成。

    Method for a adjusting a beam splitter in an optical recording and reproducing apparatus
    7.
    发明授权
    Method for a adjusting a beam splitter in an optical recording and reproducing apparatus 失效
    用于在光学记录和再现装置中调整分束器的方法

    公开(公告)号：US5410532A

    公开(公告)日：1995-04-25

    申请号：US142047

    申请日：1993-10-28

    申请人： Masahiro Ono ,  Tsuyoshi Itoh

    发明人： Masahiro Ono ,  Tsuyoshi Itoh

    IPC分类号： G01J9/02 ,  G11B7/09 ,  G11B7/22 ,  G11B11/105 ,  G11B7/00 ,  G01B11/26 ,  G01J1/20

    CPC分类号： G11B7/22 ,  G01J9/0215 ,  G11B11/10532 ,  G11B11/10576 ,  G11B7/09

    摘要： A method of adjusting a beam splitter of an optical information recording/reproducing apparatus is provided. The optical information recording/reproducing apparatus includes a laser light source, an objective optical system for converging the light beam from the laser light source, a guide rail mechanism for moving the objective optical system, a beam splitter mounted in an optical path of the light beam parallel to the transfer direction and photodetectors for detecting the light beam split by the beam splitter. The method of adjusting the beam splitter includes supporting a supplementary laser source for emitting a laser beam on the guide rail mechanism so that the laser beam of the supplementary laser source is incident onto the beam splitter along the optical path. The method further includes adjusting the beam splitter, while observing the split laser beam from the beam splitter at plural points where the photodetectors are to be mounted.

    摘要翻译： 提供一种调整光信息记录/再现装置的分束器的方法。 光信息记录/再现装置包括激光源，用于会聚来自激光光源的光束的物镜光学系统，用于移动物镜光学系统的导轨机构，安装在光的光路中的分束器 平行于传送方向的光束和用于检测由分束器分裂的光束的光电检测器。 调整分束器的方法包括：支撑用于在导轨机构上发射激光束的辅助激光源，使得辅助激光源的激光束沿着光路入射到分束器上。 该方法还包括调整分束器，同时在要安装光电检测器的多个点处观察来自分束器的分离激光束。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    9.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20130099290A1

    公开(公告)日：2013-04-25

    申请号：US13641442

    申请日：2011-04-06

    申请人： Tsuyoshi Itoh ,  Hiroshi Nakatsuji ,  Masahiro Fujiwara

    发明人： Tsuyoshi Itoh ,  Hiroshi Nakatsuji ,  Masahiro Fujiwara

    IPC分类号： H01L31/113 ,  H01L31/18

    CPC分类号： H01L31/1136 ,  G02F2001/13312 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/02675 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/78633 ,  H01L29/78636 ,  H01L31/02164 ,  H01L31/105 ,  H01L31/186 ,  H01L31/1872 ,  Y02E10/50

    摘要： Disclosed is a method for manufacturing a semiconductor device that can improve the performance of a photodiode that is formed on a same substrate as a thin film transistor without greatly deteriorating the productivity of the semiconductor device. On a glass substrate 30, a base layer 31 having a recess 33b on the surface is formed, and on the base layer 31, an amorphous silicon thin film 42 is formed. The amorphous silicon thin film 42 is melted to form a crystalline silicon thin film 43, while moving the molten silicon into the recess 33b. Of the silicon thin film 43, a silicon film 11 that constitutes a portion of a thin film transistor 10 is formed of the silicon thin film 43 in a part other than the recess 33b, while a silicon film 21 that constitutes a portion of a photodiode 20 is formed of the silicon thin film 43 in the recess 33b.

    摘要翻译： 公开了一种半导体器件的制造方法，其可以提高与薄膜晶体管形成在同一衬底上的光电二极管的性能，而不会使半导体器件的生产率大大降低。 在玻璃基板30上形成表面上具有凹部33b的基底层31，在基底层31上形成非晶硅薄膜42。 将熔融硅移动到凹部33b中，使非晶硅薄膜42熔融而形成结晶硅薄膜43。 在硅薄膜43中，构成薄膜晶体管10的一部分的硅膜11由除了凹部33b以外的部分的硅薄膜43形成，而构成光电二极管的一部分的硅膜21 20由凹槽33b中的硅薄膜43形成。