公开(公告)号：US20240176554A1

公开(公告)日：2024-05-30

申请号：US18497235

申请日：2023-10-30

Applicant: Tsuyoshi Ishikawa

Inventor： Tsuyoshi Ishikawa

IPC: G06F3/12

CPC classification number: G06F3/1204 ,  G06F3/1208 ,  G06F3/1256

Abstract: An image processing apparatus includes a memory that stores a minimum size of output that the image processing apparatus can output and circuitry. The circuitry is to determine a size of a document, output an image of the document in a case that the size of the document is determined to be smaller than the minimum size of the output, and output a notification prompting for confirmation in a case that the size of the document is determined not to be smaller than the minimum size of the output.

公开(公告)号：US09089846B2

公开(公告)日：2015-07-28

申请号：US14122711

申请日：2012-07-23

Applicant: Tsuyoshi Ishikawa ,  Shogo Iwasawa ,  Takahiro Tamura

Inventor： Tsuyoshi Ishikawa ,  Shogo Iwasawa ,  Takahiro Tamura

IPC: B02C17/16 ,  B02C17/18

CPC classification number: B02C17/1815 ,  B02C17/16 ,  B02C17/161 ,  B02C17/168 ,  B02C17/18 ,  B02C17/184

Abstract: A media-agitation pulverizer is capable of creating a uniformized, stable helicoidal flow in a mixture of pulverizing media and a raw material slurry, thereby performing pulverization/dispersion uniformly with satisfactory energy efficiency. The media-agitation pulverizer includes a guide ring installed to radially divide a lower region of a pulverization chamber into an inner section and an annular outer section, whereby a flow of a mixture of a raw material slurry and pulverizing media is formed as a helicoidal flow including a secondary flow flowing through a circulation flow path with respect to the guide ring; and rotational-flow suppressing device is provided within the pulverization chamber and adapted to strengthen the secondary flow of the helicoidal flow, thereby stabilizing the helicoidal flow.

Abstract translation: 介质搅拌粉碎机能够在粉碎介质和原料浆料的混合物中产生均匀稳定的螺旋流，从而以令人满意的能量效率均匀地进行粉碎/分散。 介质搅拌式粉碎机包括导向环，其安装成将粉碎室的下部区域径向分割成内部区段和环形外部区段，由此将原料浆料和粉碎介质的混合物的流动形成为螺旋形流动 包括流过相对于所述导向环的循环流动路径的二次流; 并且旋转流动抑制装置设置在粉碎室内并且适于加强螺旋流的二次流动，从而稳定螺旋流。

公开(公告)号：US08839130B2

公开(公告)日：2014-09-16

申请号：US13469703

申请日：2012-05-11

Applicant: Tomohisa Tanaka ,  Tsuyoshi Ishikawa ,  Qihong Wang ,  Akihiro Komori

Inventor： Tomohisa Tanaka ,  Tsuyoshi Ishikawa ,  Qihong Wang ,  Akihiro Komori

IPC: G06F3/048 ,  G06F3/041

CPC classification number: G06F3/041 ,  G06F3/048 ,  G06F3/04817 ,  G06F3/0486 ,  G06F3/0488

Abstract: An electronic apparatus includes a display unit, a sensor, and a controller. The display unit includes a screen. The sensor is configured to detect a user operation with respect to the screen and output a signal corresponding to the user operation. The controller is configured to cause a data icon to be displayed on the screen, judge a drag operation with respect to the data icon based on the signal from the sensor, judge, based on the signal from the sensor, a user operation different from the drag operation for one of copying and moving data related to the data icon based on the drag operation, and execute processing for one of copying and moving the data according to the user operation.

Abstract translation: 电子设备包括显示单元，传感器和控制器。 显示单元包括一个屏幕。 传感器被配置为检测用户对屏幕的操作并输出与用户操作相对应的信号。 控制器被配置为使得数据图标被显示在屏幕上，基于来自传感器的信号判断相对于数据图标的拖动操作，基于来自传感器的信号判断与 基于拖动操作来复制和移动与数据图标有关的数据之一的拖动操作，以及根据用户操作执行复制和移动数据之一的处理。

公开(公告)号：US08609055B2

公开(公告)日：2013-12-17

申请号：US12199112

申请日：2008-08-27

Applicant: Tsuyoshi Ishikawa ,  Yoshiyuki Ogawara ,  Tomohiko Yoshitake ,  Yukiki Murakami

Inventor： Tsuyoshi Ishikawa ,  Yoshiyuki Ogawara ,  Tomohiko Yoshitake ,  Yukiki Murakami

IPC: C01B25/00 ,  C01F1/00

CPC classification number: B01J20/048 ,  C01B25/455

Abstract: A method of producing fluoroapatite by using a calcium-based compound containing calcium, hydrogen fluoride and phosphoric acid is provided. The method can be produced fluoroapatite having improved acid resistance by reducing an amount of an impurity derived from a raw material to a low or very low level, and ability capable of separating a large amount of a protein due to a large specific surface area thereof. Further, fluoroapatite having high acid resistance and a large specific surface area is also provided. Furthermore, an adsorption apparatus using such fluoroapatite is also provided.

Abstract translation: 提供了通过使用含有钙，氟化氢和磷酸的钙基化合物制备氟磷灰石的方法。 该方法可以通过将从原料衍生的杂质的量减少至低或非常低的水平，以及由于其大的比表面积而能够分离大量蛋白质的能力，可以制备具有改善的耐酸性的氟磷灰石。 此外，还提供了具有高耐酸性和大比表面积的氟磷灰石。 此外，还提供了使用这种氟磷灰石的吸附装置。

公开(公告)号：US20130330896A1

公开(公告)日：2013-12-12

申请号：US14000901

申请日：2012-09-04

Applicant: Shinichiro Miyahara ,  Toshimasa Yamamoto ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

Inventor： Shinichiro Miyahara ,  Toshimasa Yamamoto ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

IPC: H01L29/66

CPC classification number: H01L29/66666 ,  H01L21/3065 ,  H01L29/1608 ,  H01L29/34 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/7813

Abstract: A manufacturing method of a silicon carbide semiconductor device includes: forming a drift layer on a silicon carbide substrate; forming a base layer on or in a surface portion of the drift layer; forming a source region in a surface portion of the base layer; forming a trench to penetrate the base layer and to reach the drift layer; forming a gate electrode on a gate insulation film in the trench; forming a source electrode electrically connected to the source region and the base layer; and forming a drain electrode on a back surface of the substrate. The forming of the trench includes: flattening a substrate surface; and etching to form the trench after flattening.

Abstract translation: 碳化硅半导体器件的制造方法包括：在碳化硅衬底上形成漂移层; 在漂移层的表面部分上或其中形成基底层; 在所述基底层的表面部分中形成源区; 形成沟槽以穿透基层并到达漂移层; 在沟槽中的栅极绝缘膜上形成栅电极; 形成与源极区域和基极层电连接的源电极; 以及在所述基板的背面上形成漏电极。 沟槽的形成包括：使基底表面变平; 并进行蚀刻以在平坦化之后形成沟槽。

公开(公告)号：US20120181551A1

公开(公告)日：2012-07-19

申请号：US13348781

申请日：2012-01-12

Applicant: Shinichiro Miyahara ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

Inventor： Shinichiro Miyahara ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

IPC: H01L29/24

CPC classification number: H01L21/0475 ,  H01L29/045 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/66068

Abstract: A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate and a trench. The silicon carbide semiconductor substrate has an offset angle with respect to a (0001) plane or a (000-1) plane and has an offset direction in a direction. The trench is provided from a surface of the silicon carbide semiconductor substrate. The trench extends in a direction whose interior angle with respect to the offset direction is 30 degrees or −30 degrees.

Abstract translation: 碳化硅半导体器件包括碳化硅半导体衬底和沟槽。 碳化硅半导体衬底相对于（0001）面或（000-1）面具有偏移角，并且在<11-20>方向上具有偏移方向。 从碳化硅半导体衬底的表面提供沟槽。 沟槽沿相对于偏移方向的内角为30度或-30度的方向延伸。

公开(公告)号：US20120142173A1

公开(公告)日：2012-06-07

申请号：US13308721

申请日：2011-12-01

Applicant: Hiroki WATANABE ,  Yasuo KITOU ,  Yasushi FURUKAWA ,  Kensaku YAMAMOTO ,  Hidefumi TAKAYA ,  Masahiro SUGIMOTO ,  Yukihiko WATANABE ,  Narumasa SOEJIMA ,  Tsuyoshi ISHIKAWA

Inventor： Hiroki WATANABE ,  Yasuo KITOU ,  Yasushi FURUKAWA ,  Kensaku YAMAMOTO ,  Hidefumi TAKAYA ,  Masahiro SUGIMOTO ,  Yukihiko WATANABE ,  Narumasa SOEJIMA ,  Tsuyoshi ISHIKAWA

IPC: H01L21/20 ,  C30B25/20 ,  C30B25/02

CPC classification number: H01L21/0262 ,  C30B25/186 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02529 ,  H01L21/02658 ,  H01L21/046 ,  H01L21/0475 ,  H01L29/04

Abstract: A manufacturing method of an SiC single crystal includes preparing an SiC substrate, implanting ions into a surface portion of the SiC substrate to form an ion implantation layer, activating the ions implanted into the surface portion of the SiC substrate by annealing, chemically etching the surface portion of the SiC substrate to form an etch pit that is caused by a threading screw dislocation included in the SiC substrate and performing an epitaxial growth of SiC to form an SiC growth layer on a surface of the SiC substrate including an inner wall of the etch pit in such a manner that portions of the SiC growth layer grown on the inner wall of the etch pit join with each other.

Abstract translation: SiC单晶的制造方法包括制备SiC衬底，将离子注入到SiC衬底的表面部分中以形成离子注入层，通过退火激活注入到SiC衬底的表面部分中的离子，化学蚀刻表面 以形成由SiC衬底中的螺纹位错引起的蚀刻坑，并且在SiC衬底的表面上进行SiC的外延生长以形成SiC生长层，所述SiC生长层包括蚀刻的内壁 以使得在蚀刻坑的内壁上生长的SiC生长层的部分彼此连接的方式形成凹坑。

公开(公告)号：US20120052642A1

公开(公告)日：2012-03-01

申请号：US13220756

申请日：2011-08-30

Applicant: Takeshi ENDO ,  Shinichiro MIYAHARA ,  Tomoo MORINO ,  Masaki KONISHI ,  Hirokazu FUJIWARA ,  Jun MORIMOTO ,  Tsuyoshi ISHIKAWA ,  Takashi KATSUNO ,  Yukihiko WATANABE

Inventor： Takeshi ENDO ,  Shinichiro MIYAHARA ,  Tomoo MORINO ,  Masaki KONISHI ,  Hirokazu FUJIWARA ,  Jun MORIMOTO ,  Tsuyoshi ISHIKAWA ,  Takashi KATSUNO ,  Yukihiko WATANABE

IPC: H01L21/336

CPC classification number: H01L29/7813 ,  H01L21/30604 ,  H01L21/3065 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/66068

Abstract: A method of manufacturing a semiconductor device includes forming a drift layer on a substrate; forming a base layer on the drift layer; forming a trench to penetrate the base layer and to reach the drift layer; rounding off a part of a shoulder corner and a part of a bottom corner of the trench; covering an inner wall of the trench with an organic film; implanting an impurity to a surface portion of the base layer; forming a source region by activating the implanted impurity; and removing the organic film after the source region is formed, in which the substrate, the drift layer, the base layer and the source region are made of silicon carbide, and the implanting and the activating of the impurity are performed under a condition that the trench is covered with the organic film.

Abstract translation: 制造半导体器件的方法包括在衬底上形成漂移层; 在漂移层上形成基层; 形成沟槽以穿透基层并到达漂移层; 将沟槽的一部分肩部角落和底角的一部分倒圆; 用有机膜覆盖沟槽的内壁; 将杂质注入基层的表面部分; 通过激活注入的杂质形成源区; 在形成源极区域之后除去有机膜，其中基板，漂移层，基极层和源极区域由碳化硅构成，并且杂质的注入和活化在 沟槽被有机膜覆盖。

公开(公告)号：US20110309464A1

公开(公告)日：2011-12-22

申请号：US13164246

申请日：2011-06-20

Applicant: Kensaku YAMAMOTO ,  Naohiro Suzuki ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Jun Morimoto ,  Narumasa Soejima ,  Tsuyoshi Ishikawa ,  Yukihiko Watanabe

Inventor： Kensaku YAMAMOTO ,  Naohiro Suzuki ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Jun Morimoto ,  Narumasa Soejima ,  Tsuyoshi Ishikawa ,  Yukihiko Watanabe

IPC: H01L29/06

CPC classification number: H01L29/7813 ,  H01L29/0619 ,  H01L29/0661 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/407 ,  H01L29/66068 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/8613

Abstract: A semiconductor device includes a semiconductor substrate and an electric field terminal part. The semiconductor substrate includes a substrate, a drift layer disposed on a surface of the substrate, and a base layer disposed on a surface of the drift layer. The semiconductor substrate is divided into a cell region in which a semiconductor element is disposed and a peripheral region that surrounds the cell region. The base region has a bottom face located on a same plane throughout the cell region and the peripheral region and provides an electric field relaxing layer located in the peripheral region. The electric field terminal part surrounds the cell region and a portion of the electric field relaxing layer and penetrates the electric field relaxing layer from a surface of the electric field relaxing layer to the drift layer.

Abstract translation: 半导体器件包括半导体衬底和电场端子部分。 半导体衬底包括衬底，设置在衬底的表面上的漂移层和设置在漂移层的表面上的基底层。 半导体衬底被分成其中设置半导体元件的单元区域和围绕单元区域的外围区域。 基底区域具有位于整个电池区域和外围区域的同一平面上的底面，并且提供位于周边区域中的电场弛豫层。 电场端子部围绕电池区域和电场缓和层的一部分，从电场缓和层的表面向漂移层贯通电场缓和层。

公开(公告)号：USRE41995E1

公开(公告)日：2010-12-14

申请号：US11165241

申请日：2005-06-24

Applicant: Tsuyoshi Ishikawa ,  Hiroshi Yamazaki

Inventor： Tsuyoshi Ishikawa ,  Hiroshi Yamazaki

IPC: F21V7/10 ,  B29D11/00

CPC classification number: G02B6/0046 ,  B29C45/0025 ,  B29C2045/0027 ,  B29C2045/2695 ,  B29D11/00663 ,  B29K2995/0026 ,  B29L2011/0075 ,  G02B6/0001 ,  G02B6/0065 ,  Y10S385/901

Abstract: There is provided a very thin light guide plate for a surface light source device and a method of manufacturing it without the use of high-precision molding machine. A surface light source device using this light guide plate generates outgoing light having high uniformity. According to the manufacturing method, a light guide plate free from a weld line or warp can be manufactured with good transferring characteristics. The light guide plate is thick on an incident surface 1 side and thin on a lower surface 4 side. At the central portion of an incident surface 1 in a longitudinal direction, a projecting portion obtained by cutting an overhang portion 7 at a position a distance D apart from the incident surface 1 is formed. The cut surface of the projecting portion is not made specular and is kept rough. In molding of the light guide plate, a molten material is supplied from the position of a gate mark 9. After molding, the overhang portion 7 is cut off by an ordinary cutter, thereby obtaining a light guide plate.

Abstract translation: 提供了一种用于表面光源装置的非常薄的导光板及其制造方法，而不需要使用高精度成型机。 使用该导光板的面光源装置产生高均匀性的出射光。 根据制造方法，可以制造没有焊接线或翘曲的导光板，具有良好的转印特性。 导光板在入射面1侧较厚，在下表面4侧较薄。 在入射面1的长度方向的中央部形成有通过在与入射面1分开的距离D的位置处切断突出部7而得到的突出部。 突出部分的切割表面不是镜面的并且保持粗糙。 在导光板的成型中，从浇口标记9的位置供给熔融材料。在模制之后，通过普通切割器切断突出部分7，从而获得导光板。