知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

125 条记录 (耗时 0.027 秒)

    Semiconductor device
    2.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08963198B2

    公开(公告)日：2015-02-24

    申请号：US13614503

    申请日：2012-09-13

    申请人： Tetsuo Takahashi

    发明人： Tetsuo Takahashi

    IPC分类号： H01L29/739

    CPC分类号： H01L29/7395 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/404 ,  H01L29/861

    摘要： In one surface of a semiconductor substrate, an n− layer, a p base layer, a p well layer, another p well layer, a channel stopper layer, an emitter electrode, a guard ring electrode, and a channel stopper electrode for example are formed. In the other surface of the semiconductor substrate, an n+ buffer layer, a p+ collector layer, and a collector electrode are formed. In a curved corner of the p well layer, a p low-concentration layer having a lower impurity concentration than the impurity concentration of the p well layer is formed from the surface to a predetermined depth.

    摘要翻译： 在半导体衬底的一个表面中，形成例如n层，p基底层，p阱层，另一个p阱层，沟道阻挡层，发射极，保护环电极和沟道阻挡电极。 在半导体衬底的另一个表面上形成n +缓冲层，p +集电极层和集电极。 在p阱层的弯曲角部，从表面形成具有比p阱层的杂质浓度低的杂质浓度的p低浓度层至预定深度。

    Semiconductor device
    4.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US07973382B2

    公开(公告)日：2011-07-05

    申请号：US11782390

    申请日：2007-07-24

    申请人： Tetsuo Takahashi

    发明人： Tetsuo Takahashi

    IPC分类号： H01L23/58

    CPC分类号： H01L29/404 ,  H01L29/0696 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/7816

    摘要： A gate electrode 20 and first field plates 22a to 22d and 23 are provided on a field oxide film 19. The gate electrode 20 and first field plates 22a to 22d and 23 are covered with an insulating film 24. A high-voltage wiring conductor 28 is provided on the insulating film 24. A shielding electrode 29 is provided between the first field plate 22a positioned closest to a source side and the high-voltage wiring conductor 28.

    摘要翻译： 栅场电极20和第一场板22a至22d和23设置在场氧化膜19上。栅电极20和第一场板22a至22d和23被绝缘膜24覆盖。高压配线导体28 设置在绝缘膜24上。屏蔽电极29设置在位于最靠近源极侧的第一场板22a和高压布线导体28之间。

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20100264507A1

    公开(公告)日：2010-10-21

    申请号：US12651055

    申请日：2009-12-31

    申请人： Tetsuo TAKAHASHI ,  Takami Otsuki

    发明人： Tetsuo TAKAHASHI ,  Takami Otsuki

    IPC分类号： H01L29/06

    CPC分类号： H01L29/404 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/7395

    摘要： A semiconductor device includes: a semiconductor substrate having a main surface having an element formation region, a guard ring, a guard ring electrode, a channel stopper region, a channel stopper electrode, and a field plate disposed over and insulated from the semiconductor substrate. The field plate includes a first portion located between the main surface of the semiconductor substrate and the guard ring electrode, and a second portion located between the main surface of the semiconductor substrate and the channel stopper electrode. The first portion has a portion overlapping with the guard ring electrode when viewed in a plan view. The second portion has a portion overlapping with the channel stopper electrode when viewed in the plan view. In this way, a semiconductor device allowing for stabilized breakdown voltage can be obtained.

    摘要翻译： 半导体器件包括：具有设置在半导体衬底上并与半导体衬底绝缘的具有元件形成区域的主表面，保护环，保护环电极，沟道阻挡区域，沟道阻挡电极和场板的半导体衬底。 场板包括位于半导体衬底的主表面和保护环电极之间的第一部分和位于半导体衬底的主表面和通道阻挡电极之间的第二部分。 当在俯视图中观察时，第一部分具有与保护环电极重叠的部分。 当在平面图中观察时，第二部分具有与通道阻挡电极重叠的部分。 以这种方式，可以获得允许稳定的击穿电压的半导体器件。

    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20100252904A1

    公开(公告)日：2010-10-07

    申请号：US12685180

    申请日：2010-01-11

    申请人： Tetsuo Takahashi ,  Takami Otsuki

    发明人： Tetsuo Takahashi ,  Takami Otsuki

    IPC分类号： H01L29/06 ,  H01L21/04

    CPC分类号： H01L29/063 ,  H01L29/0615 ,  H01L29/0638 ,  H01L29/404 ,  H01L29/407 ,  H01L29/66333 ,  H01L29/7395 ,  H01L29/7811

    摘要： A semiconductor includes an N-type impurity region provided in a substrate. A P-type RESURF layer is provided at a top face of the substrate in the N-type impurity region. A P-well has an impurity concentration higher than that of the P-type RESURF layer, and makes contact with the P-type RESURF layer at the top face of the substrate in the N-type impurity region. A first high-voltage-side plate is electrically connected to the N-type impurity region, and a low-voltage-side plate is electrically connected to a P-type impurity region. A lower field plate is capable of generating a lower capacitive coupling with the substrate. An upper field plate is located at a position farther from the substrate than the lower field plate, and is capable of generating an upper capacitive coupling with the lower field plate whose capacitance is greater than the capacitance of the lower capacitive coupling.

    摘要翻译： 半导体包括设置在基板中的N型杂质区。 P型RESURF层设置在N型杂质区的衬底顶面。 P阱的杂质浓度比P型RESURF层高，与N型杂质区的衬底顶面的P型RESURF层接触。 第一高电压侧板与N型杂质区电连接，低压侧板与P型杂质区电连接。 下场板能够产生与衬底的较低的电容耦合。 上场板位于比下场板更远离衬底的位置处，并且能够产生与电容大于低容性耦合的电容的下场板的上电容耦合。

    SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20080203496A1

    公开(公告)日：2008-08-28

    申请号：US11782390

    申请日：2007-07-24

    申请人： Tetsuo TAKAHASHI

    发明人： Tetsuo TAKAHASHI

    IPC分类号： H01L29/78

    CPC分类号： H01L29/404 ,  H01L29/0696 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/7816

    摘要： A gate electrode 20 and first field plates 22a to 22d and 23 are provided on a field oxide film 19. The gate electrode 20 and first field plates 22a to 22d and 23 are covered with an insulating film 24. A high-voltage wiring conductor 28 is provided on the insulating film 24. A shielding electrode 29 is provided between the first field plate 22a positioned closest to a source side and the high-voltage wiring conductor 28.

    摘要翻译： 在场氧化膜19上设置栅电极20和第一场板22 a至22 d和23.栅电极20和第一场板22a至22d和23被绝缘膜24覆盖。 电压布线导体28设置在绝缘膜24上。屏蔽电极29设置在位于最靠近源极侧的第一场板22a和高压布线导体28之间。

    Optical contact unit and optical plug
    9.
    发明授权
    Optical contact unit and optical plug 有权
    光学接触单元和光学插头

    公开(公告)号：US07232260B2

    公开(公告)日：2007-06-19

    申请号：US11105463

    申请日：2005-04-14

    申请人： Tetsuo Takahashi ,  Manabu Komatsubara

    发明人： Tetsuo Takahashi ,  Manabu Komatsubara

    IPC分类号： G02B6/36 ,  G02B6/38

    CPC分类号： G02B6/3821 ,  G02B6/3825 ,  G02B6/3874

    摘要： A ferrule holder and a coil spring are provided in a main body formed in an approximately tube shape. A cable adaptor including a front opening part at a large diameter part is inserted from a back opening part into the main body having slits and. A first small diameter part of the main body fits with the large diameter part of the cable adaptor and prevents the cable adaptor from translating in the z-axis direction. And the second small diameter part of the main body controls transfer of the ferrule holder in the z-axis direction. At the forward part of the large diameter, a taper part which helps to insert the cable adaptor is formed around the circuit of the optical axis. Each slit formed at the back opening part also helps to insert the cable adaptor.

    摘要翻译： 套管保持架和螺旋弹簧设置在形成为大致管状的主体中。 包括大直径部分的前开口部的电缆适配器从后开口部插入到具有狭缝的主体中。 主体的第一小直径部分与电缆适配器的大直径部分配合，并防止电缆适配器在z轴方向上平移。 并且主体的第二小直径部分控制套圈保持器在z轴方向上的传送。 在大直径的前部，围绕光轴的电路形成有助于插入电缆适配器的锥形部分。 形成在后开口部分处的每个狭缝也有助于插入电缆适配器。

    Adaptor unit and optical plug
    10.
    发明申请
    Adaptor unit and optical plug 有权
    适配器和光插头

    公开(公告)号：US20050232549A1

    公开(公告)日：2005-10-20

    申请号：US11105365

    申请日：2005-04-14

    申请人： Tetsuo Takahashi ,  Manabu Komatsubara

    发明人： Tetsuo Takahashi ,  Manabu Komatsubara

    IPC分类号： G02B6/26 ,  G02B6/36 ,  G02B6/38 ,  G02B6/42

    CPC分类号： G02B6/3877 ,  G02B6/4292

    摘要： A screwing part 1220 is inserted into a large through-hole 1110 from its front side and is screwed together with a male screw part of a jig. A convex part 1230 in an approximately ring shape is formed at a back end part of the screwing part 1220. The convex part 1230 is adjacent to a fitting part 1111 which is made of an approximately ring convex part projecting toward inside of the large through-hole 1110. The back of the fitting part 1111 is adjacent to a front end opening part 1310 of a back tubular part 1300. In short, the fitting part 1111 of the adaptor main body 1110 is sandwiched between the convex part 1230 and the front end opening part 1310. By inserting and pressing the back end opening part 1210 of the front tubular part 1200 into the front end opening part 1310 of the back tubular part 1300, the front tubular part 1200 and the back tubular part 1300 are connected and fixed with each other. Sign β represents their pressing part.

    摘要翻译： 螺纹部1220从其前侧插入大的通孔1110中，并用夹具的外螺纹部分拧紧在一起。 在螺纹部1220的后端部形成大致环形的凸部1230。 凸部1230与配置部1111相邻，该嵌合部1111由朝向大通孔1110的内侧突出的大致环状的凸部形成。 配合部1111的背面与背部管状部1300的前端开口部1310相邻。 简而言之，适配器主体1110的嵌合部1111夹在凸部1230和前端开口部1310之间。 通过将前管状部分1200的后端开口部分1210插入并压入后管状部分1300的前端开口部分1310中，前管状部分1200和后管状部分1300彼此连接并固定。 标志测试版表示他们的紧迫部分。