公开(公告)号：US08026164B2

公开(公告)日：2011-09-27

申请号：US12603207

申请日：2009-10-21

申请人： Satoshi Takesako ,  Shinichi Akiyama ,  Tamotsu Owada

发明人： Satoshi Takesako ,  Shinichi Akiyama ,  Tamotsu Owada

IPC分类号： H01L21/4763

CPC分类号： H01L21/76825 ,  H01L21/02123 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02351 ,  H01L21/3105 ,  H01L21/31053 ,  H01L21/3121 ,  H01L21/3212 ,  H01L21/76819 ,  H01L21/76835 ,  H01L21/7684 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device, includes steps of forming an organic insulating film over a semiconductor substrate, irradiating an electron beam to a surface of the organic insulating film, forming recesses in the organic insulating film, forming a conductive material over the organic insulating film and in the recesses, and removing the conductive material on the organic insulating film by a polishing to expose the surface of the organic insulating film and to leave the conductive material buried in recesses of the organic insulating film.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在半导体衬底上形成有机绝缘膜，将电子束照射到有机绝缘膜的表面，在有机绝缘膜中形成凹部，在有机绝缘体上形成导电材料 膜和凹部中，通过研磨去除有机绝缘膜上的导电材料，露出有机绝缘膜的表面，并将导电材料留在有机绝缘膜的凹部中。

公开(公告)号：US07763509B2

公开(公告)日：2010-07-27

申请号：US11639344

申请日：2006-12-15

申请人： Sergey Pidin ,  Tamotsu Owada

发明人： Sergey Pidin ,  Tamotsu Owada

IPC分类号： H01L21/8238 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/823807 ,  H01L29/665 ,  H01L29/7843

摘要： A method of manufacturing a semiconductor device, in which a stress film having a large stress can be formed with high accuracy over a transistor. The method comprises the steps of: depositing a tensile stress film over the whole surface of a substrate having formed thereon an n-MOSFET; removing by etching the deposited stress film while leaving it on the n-MOSFET; and performing UV irradiation to the remaining stress film. By the UV irradiation, a tensile stress of the stress film is improved. Further, although the stress film is cured by the UV irradiation, occurrence of etching defects caused by the curing is prevented because the UV irradiation is performed after the etching. Thus, speeding-up and high quality of the n-MOSFET can be attained.

摘要翻译： 一种制造半导体器件的方法，其中可以以高精度在晶体管上形成具有大应力的应力膜。 该方法包括以下步骤：在其上形成有n-MOSFET的衬底的整个表面上沉积拉伸应力膜; 通过蚀刻沉积的应力膜同时将其留在n-MOSFET上去除; 对剩余的应力膜进行紫外线照射。 通过UV照射，应力膜的拉伸应力提高。 此外，虽然通过UV照射使应力膜固化，但是由于在蚀刻之后进行UV照射，因此防止了由固化引起的蚀刻缺陷的发生。 因此，可以获得n-MOSFET的加速和高质量。

公开(公告)号：US07749897B2

公开(公告)日：2010-07-06

申请号：US12219271

申请日：2008-07-18

申请人： Ken Sugimoto ,  Yoshiyuki Ohkura ,  Hirofumi Watatani ,  Tamotsu Owada ,  Shunn-ichi Fukuyama

发明人： Ken Sugimoto ,  Yoshiyuki Ohkura ,  Hirofumi Watatani ,  Tamotsu Owada ,  Shunn-ichi Fukuyama

IPC分类号： H01L21/4763

CPC分类号： H01L21/76829 ,  H01L21/76808

摘要： A method of manufacturing a semiconductor device comprising a wiring structure that includes a vertical wiring section is disclosed. The method comprises a step of forming an interlayer insulation film made of a low dielectric constant material on a wiring layer, a step of forming a silicon oxide film by CVD using SiH4 gas and CO2 gas on the interlayer insulation film, a step of forming a chemically amplified resist film to cover the silicon oxide film, and a step of forming a first opening in a position on the chemically amplified resist film where the vertical wiring section is to be formed.

摘要翻译： 公开了一种制造包括垂直布线部分的布线结构的半导体器件的方法。 该方法包括在布线层上形成由低介电常数材料制成的层间绝缘膜的步骤，通过在层间绝缘膜上使用SiH 4气体和CO 2气体通过CVD形成氧化硅膜的步骤，形成 化学放大抗蚀剂膜覆盖氧化硅膜，以及在要形成垂直布线部分的化学放大抗蚀剂膜上的位置形成第一开口的步骤。

公开(公告)号：US20080057717A1

公开(公告)日：2008-03-06

申请号：US11844023

申请日：2007-08-23

申请人： Tamotsu OWADA ,  Hirofumi WATATANI ,  Shirou OZAKI ,  Hisaya SAKAI ,  Kenichi YANAI ,  Naoki OHARA ,  Tadahiro IMADA ,  Yoshihiro NAKATA

发明人： Tamotsu OWADA ,  Hirofumi WATATANI ,  Shirou OZAKI ,  Hisaya SAKAI ,  Kenichi YANAI ,  Naoki OHARA ,  Tadahiro IMADA ,  Yoshihiro NAKATA

IPC分类号： H01L21/311 ,  H01L21/4763

CPC分类号： H01L21/3105 ,  H01L21/02063 ,  H01L21/31116 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826

摘要： A semiconductor device manufacturing method that includes depositing a first insulating film on a semiconductor substrate, etching a part of the first insulating film, and performing UV irradiation to the first insulating film.

摘要翻译： 一种半导体器件制造方法，包括在半导体衬底上沉积第一绝缘膜，蚀刻所述第一绝缘膜的一部分，并对所述第一绝缘膜进行UV照射。

公开(公告)号：US07208405B2

公开(公告)日：2007-04-24

申请号：US10899045

申请日：2004-07-27

申请人： Tamotsu Owada ,  Hirofumi Watatani ,  Ken Sugimoto ,  Shun-ichi Fukuyama

发明人： Tamotsu Owada ,  Hirofumi Watatani ,  Ken Sugimoto ,  Shun-ichi Fukuyama

IPC分类号： H01L21/4763 ,  H01L21/302 ,  H01L21/461 ,  H01L21/31

CPC分类号： H01L21/76829 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/5329 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00

摘要： A first film made of silicon carbide is formed over a substrate. The surface of the first film is exposed to an oxidizing atmosphere to oxidize the surface layer of the first film. The surface of the first film is made in contact with chemical which makes the surface hydrophilic. On the hydrophilic surface of the first film, a second film is formed which is an insulating film made of a low dielectric constant insulating material having a relative dielectric constant of 2.7 or smaller or an insulating film made by a coating method. A sufficient adhesion property is obtained when a film made of low dielectric constant insulating material is formed on an insulating film made of silicon carbide having a small amount of oxygen contents.

摘要翻译： 在基板上形成由碳化硅制成的第一膜。 第一膜的表面暴露于氧化气氛以氧化第一膜的表面层。 第一膜的表面与化学品接触，使表面亲水。 在第一膜的亲水表面上，形成第二膜，该第二膜是由相对介电常数为2.7以下的低介电常数绝缘材料制成的绝缘膜，或通过涂布法制成的绝缘膜。 当在由少量氧含量的碳化硅制成的绝缘膜上形成由低介电常数绝缘材料制成的膜时，获得了足够的附着性。

公开(公告)号：US20060178017A1

公开(公告)日：2006-08-10

申请号：US11171318

申请日：2005-07-01

申请人： Tamotsu Owada ,  Hirofumi Watatani ,  Yoshihiro Nakata ,  Shirou Ozaki ,  Shun-ichi Fukuyama

发明人： Tamotsu Owada ,  Hirofumi Watatani ,  Yoshihiro Nakata ,  Shirou Ozaki ,  Shun-ichi Fukuyama

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02282 ,  C23C16/45523 ,  C23C16/50 ,  H01L21/02123 ,  H01L21/0234 ,  H01L21/316 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L2224/05

摘要： Disclosed is a method for effectively forming a Low-k insulating film. The method comprises the steps of: spin-coating on an underlying layer a precursor solution formed by dispersing Low-k materials in a solvent to form a coating film, subjecting the coating film to a baking treatment under heating for about several minutes at a temperature near a boiling point of the solvent, forming, on the coating film after the baking treatment, an SiC barrier film using a CVD method, and subjecting the coating film to a hydrogen plasma treatment through the barrier film continuously using the same CVD apparatus as used in forming the barrier film without taking out the coating film from the CVD apparatus.

公开(公告)号：US20060087041A1

公开(公告)日：2006-04-27

申请号：US11256681

申请日：2005-10-24

申请人： Shun-ichi Fukuyama ,  Tamotsu Owada ,  Hiroko Inoue ,  Ken Sugimoto

发明人： Shun-ichi Fukuyama ,  Tamotsu Owada ,  Hiroko Inoue ,  Ken Sugimoto

IPC分类号： H01L23/48

CPC分类号： H01L23/5329 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/53295 ,  H01L2221/1036 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A semiconductor device is disclosed that includes a substrate, a first wiring structure arranged on the substrate which first wiring structure includes a first insulating layer and a first wiring layer arranged within the first insulating layer, a second wiring structure arranged on the first wiring structure which second wiring structure includes a second insulating layer including a shock absorbing layer made of an insulating film and a second wiring layer arranged within the second insulating layer, and a third wiring structure arranged on the second wiring structure which third wiring structure includes a third insulating layer and a third wiring layer arranged within the third insulating layer. The fracture toughness value of the shock absorbing layer is arranged to be greater than the fracture toughness value of the first insulating film and the fracture toughness value of the third insulating film.

摘要翻译： 公开了一种半导体器件，其包括基板，布置在基板上的第一布线结构，第一布线结构包括第一绝缘层和布置在第一绝缘层内的第一布线层，布置在第一布线结构上的第二布线结构， 第二布线结构包括：第二绝缘层，包括由绝缘膜制成的减震层和布置在第二绝缘层内的第二布线层;以及布置在第二布线结构上的第三布线结构，第三布线结构包括第三绝缘层 以及布置在所述第三绝缘层内的第三布线层。 冲击吸收层的断裂韧性值被设置为大于第一绝缘膜的断裂韧性值和第三绝缘膜的断裂韧性值。

公开(公告)号：US20050287790A1

公开(公告)日：2005-12-29

申请号：US11206955

申请日：2005-08-19

申请人： Tamotsu Owada ,  Shun-ichi Fukuyama ,  Hirofumi Watatani ,  Kengo Inoue ,  Atsuo Shimizu

发明人： Tamotsu Owada ,  Shun-ichi Fukuyama ,  Hirofumi Watatani ,  Kengo Inoue ,  Atsuo Shimizu

IPC分类号： C23C16/30 ,  H01L21/316 ,  H01L21/469 ,  H01L21/768

CPC分类号： H01L21/02227 ,  C23C16/30 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/0234 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834

摘要： A method of manufacturing a semiconductor device includes the steps of: preparing an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of O2 to bring the surface more hydrophilic. Film peel-off and cracks in the interlayer insulating layer decrease.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：制备具有覆盖铜布线的碳化硅层的下面的结构，并且通过气相沉积作为原料气体四甲基环四硅氧烷，二氧化碳气体和氧气生长碳氢化合物 所述氧气的流量为二氧化碳气体流量的3％以下。 下面结构的碳化硅层的表面可以用含有氧的弱氧化气体的等离子体处理，并且分子量大于O 2 O 2的分子量以使表面更亲水。 膜剥离和层间绝缘层中的裂纹减少。

公开(公告)号：US20050242440A1

公开(公告)日：2005-11-03

申请号：US10899045

申请日：2004-07-27

申请人： Tamotsu Owada ,  Hirofumi Watatani ,  Ken Sugimoto ,  Shun-ichi Fukuyama

发明人： Tamotsu Owada ,  Hirofumi Watatani ,  Ken Sugimoto ,  Shun-ichi Fukuyama

IPC分类号： H01L23/522 ,  H01L21/314 ,  H01L21/768 ,  H01L23/48 ,  H01L23/532

CPC分类号： H01L21/76829 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/5329 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00

摘要： A first film made of silicon carbide is formed over a substrate. The surface of the first film is exposed to an oxidizing atmosphere to oxidize the surface layer of the first film. The surface of the first film is made in contact with chemical which makes the surface hydrophilic. On the hydrophilic surface of the first film, a second film is formed which is an insulating film made of a low dielectric constant insulating material having a relative dielectric constant of 2.7 or smaller or an insulating film made by a coating method. A sufficient adhesion property is obtained when a film made of low dielectric constant insulating material is formed on an insulating film made of silicon carbide having a small amount of oxygen contents.

摘要翻译： 在基板上形成由碳化硅制成的第一膜。 第一膜的表面暴露于氧化气氛以氧化第一膜的表面层。 第一膜的表面与化学品接触，使表面亲水。 在第一膜的亲水表面上，形成第二膜，该第二膜是由相对介电常数为2.7以下的低介电常数绝缘材料制成的绝缘膜，或通过涂布法制成的绝缘膜。 当在由少量氧含量的碳化硅制成的绝缘膜上形成由低介电常数绝缘材料制成的膜时，获得了足够的附着性。

公开(公告)号：US08669177B2

公开(公告)日：2014-03-11

申请号：US12366020

申请日：2009-02-05

申请人： Takahiro Kouno ,  Shinichi Akiyama ,  Hirofumi Watatani ,  Tamotsu Owada

发明人： Takahiro Kouno ,  Shinichi Akiyama ,  Hirofumi Watatani ,  Tamotsu Owada

IPC分类号： H01L21/4763

CPC分类号： H01L23/53238 ,  H01L21/76835 ,  H01L21/76844 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76867 ,  H01L23/53295 ,  H01L2221/1036 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes an insulation film formed above a semiconductor substrate, a conductor containing Cu formed in the insulation film, and a layer film formed between the insulation film and the conductor and formed of a first metal film containing Ti and a second metal film different from the first metal film, a layer containing Ti and Si is formed on the surface of the conductor.

摘要翻译： 半导体器件包括形成在半导体衬底上的绝缘膜，包含在绝缘膜中形成的Cu的导体以及形成在绝缘膜和导体之间的层膜，并且由含有Ti和第二金属膜的第一金属膜形成，所述第一金属膜不同 从第一金属膜，在导体的表面上形成含有Ti和Si的层。