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公开(公告)号：US20130193440A1
公开(公告)日：2013-08-01
申请号：US13792404
申请日：2013-03-11
申请人： Takeshi Kuriyagawa , Jun Fujiyoshi
发明人： Takeshi Kuriyagawa , Jun Fujiyoshi
IPC分类号： H01L33/42
CPC分类号： H01L33/42 , H01L27/124 , H01L29/4908
摘要： A display device in which a plurality of gate wires and a plurality of drain wires that intersect the gate wires are provided, and thin film transistors connected to the gate wires and the drain wires are formed for respective pixel regions. At least one of the gate wires, the drain wires, and lead wires drawn from the gate wires or the drain wires is formed of a light-transmitting patterned conductive film. The light-transmitting patterned conductive film is formed of at least a first light-transmitting patterned conductive film, and a second light-transmitting patterned conductive film laminated on the first light-transmitting patterned conductive film. The second light-transmitting patterned conductive film is formed of a conductive film for coating only the surface of the first light-transmitting patterned conductive film including its side wall surface.
摘要翻译： 设置有与栅极布线相交的多个栅极布线和多个漏极布线的显示装置，并且为各像素区域形成与栅极布线和漏极布线连接的薄膜晶体管。 栅极线，漏极线以及从栅极线或漏极导线引出的引线中的至少一个由透光图案化的导电膜形成。 透光图案化导电膜由至少第一透光图案化导电膜和层压在第一透光图案化导电膜上的第二透光图案化导电膜形成。 第二透光图案化导电膜由仅用于涂覆包括其侧壁表面的第一透光图案化导电膜的表面的导电膜形成。
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公开(公告)号：US20120326179A1
公开(公告)日：2012-12-27
申请号：US13526568
申请日：2012-06-19
CPC分类号： G02B26/0841 , B81B7/007 , B81B2201/045 , B81C2201/0132 , B81C2201/016
摘要： The MEMS shutter includes a shutter having an aperture part, a first spring connected to the shutter, a first anchor connected to the first spring, a second spring and a second anchor connected to the second spring, an insulation film on a surface of the shutter, the first spring, the second spring, the first anchor and the second anchor, the surfaces being in a perpendicular direction to a surface of a substrate, and the insulation film is not present on a surface of the plurality of terminals, and a surface of the shutter, the first spring, the second spring, the first anchor and the second anchor, the surfaces being in a parallel direction to a surface of the substrate and on the opposite side of the side facing the substrate.
摘要翻译： MEMS快门包括具有开口部分的快门，连接到快门的第一弹簧，连接到第一弹簧的第一锚杆，连接到第二弹簧的第二弹簧和第二锚固件，在挡板的表面上的绝缘膜 所述第一弹簧，所述第二弹簧，所述第一锚固件和所述第二锚固件，所述表面在垂直于基板表面的方向上，并且所述绝缘膜不存在于所述多个端子的表面上，并且所述表面 所述第一弹簧，所述第二弹簧，所述第一锚固件和所述第二锚固件，所述表面在与所述基板的表面平行的方向上以及在面向所述基板的所述一侧的相对侧上。
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公开(公告)号：US20080070351A1
公开(公告)日：2008-03-20
申请号：US11857481
申请日：2007-09-19
IPC分类号： H01L21/84
CPC分类号： H01L27/1288 , H01L27/1255 , H01L29/78645
摘要： In a display device manufacturing method including a step of forming a semiconductor film above a substrate and a step of implanting an impurity to each of a first semiconductor film in a first region of the substrate, a second semiconductor film in a second region outside the first region, and a third semiconductor film in a third region outside the first and second regions, the implanting step includes: a first step of forming a first resist above the substrate so as to be thicker in the first region than in the second region, the first resist covering the first and second regions and having an opening in the third region; a second step of implanting an impurity to only the third semiconductor in the third region using the first resist as a mask; a third step of thinning the first resist so as to form a second resist that covers the first region and has an opening in each of second and third regions; a fourth step of implanting an impurity to the second and third semiconductor films in the second and third regions simultaneously using the second resist as a mask; and a fifth step of implanting an impurity to the first to third semiconductor films in the first to third regions simultaneously.
摘要翻译： 在包括在衬底上形成半导体膜的步骤和在衬底的第一区域中向第一半导体膜中的每一个注入杂质的步骤的显示器件制造方法中，在第一区域之外的第二区域中的第二半导体膜 区域，以及在第一和第二区域外的第三区域中的第三半导体膜，所述注入步骤包括：第一步骤，在所述衬底上方形成第一抗蚀剂，使其在所述第一区域中比在所述第二区域中更厚， 第一抗蚀剂覆盖第一和第二区域并且在第三区域中具有开口; 使用第一抗蚀剂作为掩模将杂质注入第三区域中的第三半导体的第二步骤; 第三步骤，使第一抗蚀剂变薄以形成覆盖第一区域并在第二和第三区域中的每一个具有开口的第二抗蚀剂; 第四步骤，使用第二抗蚀剂作为掩模，将杂质注入第二和第三区域中的第二和第三半导体膜; 以及将第一至第三区域中的第一至第三半导体膜同时注入杂质的第五步骤。
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公开(公告)号：US08729556B2
公开(公告)日：2014-05-20
申请号：US13792404
申请日：2013-03-11
申请人： Takeshi Kuriyagawa , Jun Fujiyoshi
发明人： Takeshi Kuriyagawa , Jun Fujiyoshi
IPC分类号： H01L27/14
CPC分类号： H01L33/42 , H01L27/124 , H01L29/4908
摘要： A display device in which a plurality of gate wires and a plurality of drain wires that intersect the gate wires are provided, and thin film transistors connected to the gate wires and the drain wires are formed for respective pixel regions. At least one of the gate wires, the drain wires, and lead wires drawn from the gate wires or the drain wires is formed of a light-transmitting patterned conductive film. The light-transmitting patterned conductive film is formed of at least a first light-transmitting patterned conductive film, and a second light-transmitting patterned conductive film laminated on the first light-transmitting patterned conductive film. The second light-transmitting patterned conductive film is formed of a conductive film for coating only the surface of the first light-transmitting patterned conductive film including its side wall surface.
摘要翻译： 设置有与栅极布线相交的多个栅极布线和多个漏极布线的显示装置，并且为各像素区域形成与栅极布线和漏极布线连接的薄膜晶体管。 栅极线，漏极线以及从栅极线或漏极导线引出的引线中的至少一个由透光图案化的导电膜形成。 透光图案化导电膜由至少第一透光图案化导电膜和层压在第一透光图案化导电膜上的第二透光图案化导电膜形成。 第二透光图案化导电膜由仅用于涂覆包括其侧壁表面的第一透光图案化导电膜的表面的导电膜形成。
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公开(公告)号：US20090218574A1
公开(公告)日：2009-09-03
申请号：US12379095
申请日：2009-02-12
IPC分类号： H01L33/00
CPC分类号： H01L27/127 , H01L27/1214 , H01L29/66765 , H01L29/78621
摘要： A display device includes a thin film transistor above a substrate, in which the thin film transistor is configured to include a gate electrode, a gate insulating film formed to cover the gate electrode, a semiconductor layer formed to stride over the gate electrode on the gate insulating film, an inter-layer insulating film formed to cover the semiconductor layer, and a pair of electrodes formed to be connected to each of sides of the semiconductor layer interposing the gate electrode therebetween through contact holes formed through the inter-layer insulating film, high concentration impurity layers are formed at each connecting portion of the electrodes of the semiconductor layer, and an annular low-concentration impurity layer is formed to surround at least one of the high concentration impurity layers.
摘要翻译： 显示装置包括在基板上方的薄膜晶体管，其中薄膜晶体管被配置为包括栅极电极，形成为覆盖栅电极的栅极绝缘膜，形成为跨越栅极上的栅极电极的半导体层 绝缘膜，形成为覆盖半导体层的层间绝缘膜，以及一对电极，其形成为通过穿过该层间绝缘膜形成的接触孔而将半导体层的每一侧连接在其间的栅电极， 在半导体层的电极的每个连接部分处形成高浓度杂质层，并且形成环状低浓度杂质层以包围至少一个高浓度杂质层。
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公开(公告)号：US20090095957A1
公开(公告)日：2009-04-16
申请号：US12285820
申请日：2008-10-15
CPC分类号： H01L29/78696 , H01L27/1229 , H01L27/1251 , H01L29/66765
摘要： To provide a display device, including a polysilicon thin film transistor, which achieves a reduction of an off current with a simple configuration and with only a slight increase in a number of processes. A display device includes: an insulating substrate, and a thin film transistor formed on the insulating substrate, wherein a semiconductor layer of the thin film transistor has a polysilicon layer, a first amorphous silicon layer formed above the polysilicon layer, and a second amorphous silicon layer formed above the first amorphous silicon layer.
摘要翻译： 提供一种包括多晶硅薄膜晶体管的显示装置，其以简单的配置实现了关断电流的降低，并且仅有少量的处理量增加。 一种显示装置，包括：绝缘基板和形成在所述绝缘基板上的薄膜晶体管，其中，所述薄膜晶体管的半导体层具有多晶硅层，形成在所述多晶硅层上方的第一非晶硅层，以及第二非晶硅 层形成在第一非晶硅层之上。
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公开(公告)号：US20120307335A1
公开(公告)日：2012-12-06
申请号：US13483125
申请日：2012-05-30
申请人： Takeshi KURIYAGAWA
发明人： Takeshi KURIYAGAWA
CPC分类号： G02B26/023
摘要： A display device according to the present invention includes a plurality of pixels provided on a substrate; a first insulating film provided on the substrate; a second insulating film provided on the first insulating film in contact with at least a part thereof and formed of a different material from that of the first insulating film; a plurality of MEMS shutters provided on the second insulating film respectively in correspondence with the plurality of pixels, the plurality of MEMS shutters having a third insulating film formed on side surfaces thereof; and a plurality of terminals for supplying a potential to the plurality of gate lines and the plurality of data lines, the plurality of terminals receiving the potential through openings formed in the first insulating film and the second insulating film, the openings being formed on the plurality of terminals.
摘要翻译： 根据本发明的显示装置包括设置在基板上的多个像素; 设置在所述基板上的第一绝缘膜; 第二绝缘膜，设置在与所述第一绝缘膜的至少一部分接触并且由与所述第一绝缘膜的材料不同的材料形成的所述第一绝缘膜上; 多个MEMS百叶窗分别设置在第二绝缘膜上，与多个像素对应，多个MEMS快门具有形成在其侧表面上的第三绝缘膜; 以及多个端子，用于向所述多条栅极线和所述多条数据线提供电位，所述多个端子接收形成在所述第一绝缘膜和所述第二绝缘膜中的电势通孔，所述多个开口形成在所述多个栅极线 的终端。
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公开(公告)号：US20120287494A1
公开(公告)日：2012-11-15
申请号：US13429470
申请日：2012-03-26
CPC分类号： G02B26/02 , G02B26/0841 , G09G3/3433 , G09G2300/08
摘要： A metal layer is formed on a highly light-transmissive substrate; a resist mask having an opening pattern is formed on the metal layer; exposed portions of the metal layer is etched away in this state to form openings; then the resist mask is removed; and a surface of the metal layer and an inner side wall of each of the openings are oxidized to form a metal oxide layer. Thus, a front surface and a rear surface of the aperture plate are caused to have different reflectances. The oxide layer is formed at the same time as when the resist mask is ashed to remove resist.
摘要翻译： 金属层形成在高透光性基板上; 在金属层上形成具有开口图案的抗蚀剂掩模; 在该状态下，金属层的暴露部分被蚀刻掉以形成开口; 然后去除抗蚀剂掩模; 并且金属层的表面和每个开口的内侧壁被氧化以形成金属氧化物层。 因此，使孔板的前表面和后表面具有不同的反射率。 在抗蚀剂掩模被灰化以除去抗蚀剂的同时形成氧化物层。
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公开(公告)号：US20120223315A1
公开(公告)日：2012-09-06
申请号：US13406548
申请日：2012-02-28
IPC分类号： H01L29/786 , H01L33/08
CPC分类号： H01L29/78669 , H01L29/78609 , H01L29/78678
摘要： Disclosed is a display device including: a gate electrode; a semiconductor layer formed into an island shape on an upper side of the gate electrode; a side wall oxide film formed on a lateral surface of the semiconductor layer; and a drain electrode and a source electrode formed on an upper side of the semiconductor layer extending from a lateral side of the semiconductor layer, wherein the side wall oxide film has a thickness of 2.1 nm or more.
摘要翻译： 公开了一种显示装置，包括：栅电极; 在栅电极的上侧形成为岛状的半导体层; 形成在半导体层的侧表面上的侧壁氧化膜; 以及形成在半导体层的从半导体层的侧面延伸的上侧的漏电极和源电极，其中，所述侧壁氧化膜的厚度为2.1nm以上。
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公开(公告)号：US20110254006A1
公开(公告)日：2011-10-20
申请号：US13085517
申请日：2011-04-13
申请人： Takeshi KURIYAGAWA , Jun Fujiyoshi
发明人： Takeshi KURIYAGAWA , Jun Fujiyoshi
CPC分类号： H01L33/42 , H01L27/124 , H01L29/4908
摘要： A display device in which a plurality of gate wires and a plurality of drain wires that intersect the gate wires are provided, and thin film transistors connected to the gate wires and the drain wires are formed for respective pixel regions. At least one of the gate wires, the drain wires, and lead wires drawn from the gate wires or the drain wires is formed of a light-transmitting patterned conductive film. The light-transmitting patterned conductive film is formed of at least a first light-transmitting patterned conductive film, and a second light-transmitting patterned conductive film laminated on the first light-transmitting patterned conductive film. The second light-transmitting patterned conductive film is formed of a conductive film for coating only the surface of the first light-transmitting patterned conductive film including its side wall surface.
摘要翻译： 设置有与栅极布线相交的多个栅极布线和多个漏极布线的显示装置，并且为各像素区域形成与栅极布线和漏极布线连接的薄膜晶体管。 栅极线，漏极线以及从栅极线或漏极导线引出的引线中的至少一个由透光图案化的导电膜形成。 透光图案化导电膜由至少第一透光图案化导电膜和层压在第一透光图案化导电膜上的第二透光图案化导电膜形成。 第二透光图案化导电膜由仅用于涂覆包括其侧壁表面的第一透光图案化导电膜的表面的导电膜形成。
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