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    DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME
    1.
    发明申请
    DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME 审中-公开
    其显示装置及其制造方法

    公开(公告)号：US20120217502A1

    公开(公告)日：2012-08-30

    申请号：US13404043

    申请日：2012-02-24

    申请人： Isao SUZUMURA

    发明人： Isao SUZUMURA

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L29/78696 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/78618

    摘要： Provided is a display device which includes: a gate electrode; a first semiconductor layer in a crystallized state which is formed over the gate electrode; a source electrode and a drain electrode which are formed over the first semiconductor layer; and a second semiconductor layer which extends from a side of the first semiconductor layer and is interposed between one of the source electrode and the drain electrode and the first semiconductor layer, wherein the second semiconductor layer includes a first portion which is formed in a crystallized state and brought into contact with the first semiconductor layer, and a second portion which has lower crystallinity than the first portion.

    摘要翻译： 提供一种显示装置，其包括：栅电极; 形成在栅电极上的结晶状态的第一半导体层; 源电极和漏电极，形成在第一半导体层上; 以及第二半导体层，其从所述第一半导体层的一侧延伸并且设置在所述源电极和所述漏电极之间以及所述第一半导体层之间，其中所述第二半导体层包括以结晶状态形成的第一部分 并与第一半导体层接触，第二部分具有比第一部分低的结晶度。

    Liquid crystal display device
    2.
    发明授权
    Liquid crystal display device 有权
    液晶显示装置

    公开(公告)号：US07948587B2

    公开(公告)日：2011-05-24

    申请号：US12203966

    申请日：2008-09-04

    申请人： Daisuke Sonoda ,  Takahiro Ochiai ,  Isao Suzumura

    发明人： Daisuke Sonoda ,  Takahiro Ochiai ,  Isao Suzumura

    IPC分类号： G02F1/1335 ,  G02F1/1343

    CPC分类号： G02F1/134363 ,  G02F1/133553 ,  G02F1/13439 ,  G02F2203/03

    摘要： Reflective electrodes having unevenness are formed on a resin layer of a TFT substrate. A coating-type ITO film having a film thickness of 0.5 μm to 1 μm which constitute a pixel electrode is applied to the reflective electrode. A surface of the coating-type ITO film is leveled. A capacitive insulation film is formed on the pixel electrode, and a comb-teeth-shaped common electrode is formed on the capacitive insulation film. When a voltage is applied between the common electrode and the pixel electrode, liquid crystal is controlled by a leaked electric field. Since the common electrode is formed in a planar plane, a thickness of a liquid crystal layer can be made uniform.

    摘要翻译： 在TFT基板的树脂层上形成具有凹凸的反射电极。 构成像素电极的膜厚为0.5μm〜1μm的被覆型ITO膜被施加到反射电极。 涂覆型ITO膜的表面平整。 在像素电极上形成电容绝缘膜，在电容绝缘膜上形成梳齿形的公共电极。 当在公共电极和像素电极之间施加电压时，通过泄漏的电场来控制液晶。 由于公共电极形成在平面内，所以可以使液晶层的厚度均匀。

    IMAGE DISPLAYING DEVICE
    4.
    发明申请
    IMAGE DISPLAYING DEVICE 审中-公开
    图像显示装置

    公开(公告)号：US20130011945A1

    公开(公告)日：2013-01-10

    申请号：US13618083

    申请日：2012-09-14

    申请人： Isao SUZUMURA ,  Yoshiaki Toyota

    发明人： Isao SUZUMURA ,  Yoshiaki Toyota

    IPC分类号： H01L33/48

    CPC分类号： H01L27/14643 ,  G09G3/20 ,  H01L27/1214 ,  H01L27/14692

    摘要： An image displaying device having multiple photosensing devices have successfully suppressed a leakage current from each photosensing device and improved the S/N ratio. In the image displaying device, pixels and photosensing devices are disposed as pairs in a matrix pattern on a substrate. Each of the pixels and each of the photosensing devices are driven independently. Each photosensing device includes a semiconductor layer that is a photoelectric conversion layer connected to at least a first electrode and a second electrode. The contact surfaces of the first and second electrodes with respect to the semiconductor layer are disposed so that their center axes are separated from each other.

    摘要翻译： 具有多个感光装置的图像显示装置成功地抑制了来自每个感光装置的泄漏电流并提高了S / N比。 在图像显示装置中，像素和感光装置成对地以矩阵形式设置在基板上。 每个像素和每个光敏器件都是独立驱动的。 每个感光装置包括半导体层，其是连接到至少第一电极和第二电极的光电转换层。 第一和第二电极相对于半导体层的接触表面被设置成使得它们的中心轴彼此分离。

    THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
    5.
    发明申请
    THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF 有权
    薄膜晶体管及其制造方法

    公开(公告)号：US20110133197A1

    公开(公告)日：2011-06-09

    申请号：US12958605

    申请日：2010-12-02

    申请人： Isao SUZUMURA ,  Yoshiaki TOYOTA ,  Mieko MATSUMURA

    发明人： Isao SUZUMURA ,  Yoshiaki TOYOTA ,  Mieko MATSUMURA

    IPC分类号： H01L29/04

    CPC分类号： H01L29/66765 ,  H01L27/1248 ,  H01L27/1277 ,  H01L27/1281 ,  H01L29/78678 ,  H01L29/78696

    摘要： A bottom gate-type thin film transistor includes a gate insulating film, an interlayer insulating film formed on the gate insulating film, having an opening which is formed in a formation region of a gate electrode, and a semiconductor film formed on the interlayer insulating film so as to cover the opening. The interlayer insulating film contains nitrides in an amount larger than that in the gate insulating film, and the semiconductor film includes a microcrystalline semiconductor film or a polycrystalline semiconductor film formed on semiconductor crystalline nuclei which are formed on the gate insulating film and the interlayer insulating film and contain at least Ge.

    摘要翻译： 底栅型薄膜晶体管包括栅极绝缘膜，形成在栅极绝缘膜上的层间绝缘膜，具有形成在栅电极的形成区域中的开口，以及形成在层间绝缘膜上的半导体膜 以覆盖开幕。 层间绝缘膜含有比栅极绝缘膜大的氮化物，并且半导体膜包括在栅极绝缘膜和层间绝缘膜上形成的形成在半导体结晶核上的微晶半导体膜或多晶半导体膜 并至少含有Ge。

    DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME
    8.
    发明申请
    DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME 审中-公开
    其显示装置及其制造方法

    公开(公告)号：US20120223315A1

    公开(公告)日：2012-09-06

    申请号：US13406548

    申请日：2012-02-28

    申请人： Norihiro UEMURA ,  Hidekazu MIYAKE ,  Isao SUZUMURA ,  Takeshi KURIYAGAWA

    发明人： Norihiro UEMURA ,  Hidekazu MIYAKE ,  Isao SUZUMURA ,  Takeshi KURIYAGAWA

    IPC分类号： H01L29/786 ,  H01L33/08

    CPC分类号： H01L29/78669 ,  H01L29/78609 ,  H01L29/78678

    摘要： Disclosed is a display device including: a gate electrode; a semiconductor layer formed into an island shape on an upper side of the gate electrode; a side wall oxide film formed on a lateral surface of the semiconductor layer; and a drain electrode and a source electrode formed on an upper side of the semiconductor layer extending from a lateral side of the semiconductor layer, wherein the side wall oxide film has a thickness of 2.1 nm or more.

    摘要翻译： 公开了一种显示装置，包括：栅电极; 在栅电极的上侧形成为岛状的半导体层; 形成在半导体层的侧表面上的侧壁氧化膜; 以及形成在半导体层的从半导体层的侧面延伸的上侧的漏电极和源电极，其中，所述侧壁氧化膜的厚度为2.1nm以上。

    Semiconductor device and manufacturing method thereof
    9.
    发明申请
    Semiconductor device and manufacturing method thereof 失效
    半导体装置及其制造方法

    公开(公告)号：US20060154450A1

    公开(公告)日：2006-07-13

    申请号：US11329107

    申请日：2006-01-11

    申请人： Isao Suzumura ,  Katsuya Oda

    发明人： Isao Suzumura ,  Katsuya Oda

    IPC分类号： H01L21/20

    CPC分类号： H01L29/1054 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/66242 ,  H01L29/66431 ,  H01L29/78

    摘要： A manufacturing method of a semiconductor device in which the oxygen and carbon concentrations are reduced at the interface of each layer making up the semiconductor multilayer film. A first semiconductor layer is formed on a single-crystal substrate in a first reactor; the substrate is transferred from the first reactor to a second reactor through a transfer chamber; and a second semiconductor layer is formed on the first semiconductor layer in the second reactor. During substrate transfer, hydrogen is supplied when the number of hydrogen atoms bonding with the surface atoms of the first semiconductor layer is less than the number of surface atoms of the first semiconductor layer, and the supply of hydrogen is stopped when the number of hydrogen atoms bonding with the surface atoms of the first semiconductor layer is greater than the number of surface atoms of the first semiconductor layer.

    摘要翻译： 在构成半导体多层膜的各层的界面处，氧和碳浓度降低的半导体装置的制造方法。 在第一反应器中的单晶衬底上形成第一半导体层; 基板通过传送室从第一反应器转移到第二反应器; 并且在第二反应器中的第一半导体层上形成第二半导体层。 在衬底转印期间，当与第一半导体层的表面原子键合的氢原子的数量小于第一半导体层的表面原子数时，供给氢，当氢原子数 与第一半导体层的表面原子的键合大于第一半导体层的表面原子数。

    Heterojunction bipolar transistor and method for production thereof
    10.
    发明授权
    Heterojunction bipolar transistor and method for production thereof 有权
    异质结双极晶体管及其制造方法

    公开(公告)号：US06667489B2

    公开(公告)日：2003-12-23

    申请号：US10299837

    申请日：2002-11-20

    申请人： Isao Suzumura ,  Katsuya Oda ,  Katsuyoshi Washio

    发明人： Isao Suzumura ,  Katsuya Oda ,  Katsuyoshi Washio

    IPC分类号： H01L2906

    CPC分类号： H01L29/66242 ,  H01L29/7378

    摘要： A high-speed heterojunction bipolar transistor in a large injection of electrons from the emitter and a method for production thereof. In a typical example of the SiGeC heterojunction bipolar transistor, the collector has a layer of n-type single-crystal Si and a layer of n-type single-crystal SiGe, the base is a layer of heavily doped p-type single-crystal SiGeC, and the emitter is a layer of n-type single-crystal Si. At the heterointerface between the layer of n-type single-crystal SiGe and the layer of p-type single-crystal SiGeC, the bandgap of the p-type single-crystal SiGeC is larger than that of the layer of n-type single-crystal SiGe. Even though the effective neutral base expands due to an increase in electrons injected from the emitter, no energy barrier occurs in the conduction band at the heterointerface between the layer of n-type single-crystal SiGe and the layer of p-type single-crystal SiGeC. Thus, the diffusion of electrons is not inhibited and it is possible to realize high-speed heterojunction bipolar transistors even in the high injection state.

    摘要翻译： 从发射极大量注入电子的高速异质结双极晶体管及其制造方法。 在SiGeC异质结双极晶体管的典型实例中，集电体具有n型单晶Si层和n型单晶SiGe层，基极是重掺杂p型单晶层 SiGeC，发射极是n型单晶Si层。 在n型单晶SiGe层和p型单晶SiGeC层之间的异质界面处，p型单晶SiGeC的带隙大于n型单晶SiGeC层的带隙， 水晶SiGe。 即使有效的中性碱基由于从发射体注入的电子的增加而扩大，在n型单晶SiGe层与p型单晶层之间的异质界面的导带中也不发生能量势垒 SiGeC。 因此，电子的扩散不被抑制，即使在高注入状态下也可以实现高速异质结双极晶体管。