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公开(公告)号：US06828541B2
公开(公告)日：2004-12-07
申请号：US10088268
申请日：2002-09-23
IPC分类号： H01L2700
CPC分类号： H01L27/14643 , H01L27/14623 , H01L27/1463 , H01L27/14636 , H01L2224/48091 , H01L2224/48227 , H01L2924/00014
摘要： A light-receiving element array is provided in which the degradation of characteristic thereof due to the crosstalk may be prevented. An n-InP layer, an i-InGaAs layer, and an n-InP layer are stacked on an n-InP substrate. Zn is diffused into the topmost n-InP layer to form a p-type diffused region, resulting in a pin-photodiode. A passivation layer is deposited on the structure to a thickness such that a nonreflective condition is satisfied. On the passivation film, a light-shielding film is provided so as to cover the area between light-receiving elements.
摘要翻译： 提供了一种光接收元件阵列，其中可以防止由串扰引起的特性劣化。 在n-InP衬底上堆叠n-InP层，i-InGaAs层和n-InP层。 Zn扩散到最上面的n-InP层中以形成p型扩散区域，得到pin光电二极管。 钝化层沉积在结构上以使得满足非反射条件的厚度。 在钝化膜上设置遮光膜以覆盖光接收元件之间的区域。
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公开(公告)号：US07372124B2
公开(公告)日：2008-05-13
申请号：US10959960
申请日：2004-10-06
申请人： Takashi Tagami , Kenichi Nakama
发明人： Takashi Tagami , Kenichi Nakama
IPC分类号： H01L31/00
CPC分类号： G01J9/00 , G01J1/42 , G01J3/2803 , G01J3/36 , H01L31/02024 , H01L31/03046 , H01L31/105 , Y02E10/544
摘要： A light-receiving element may easily detect the barycenter of a light intensity of light having a long-wavelength band in an optical communication. An InGaAs layer (i-type layer) and a p-type InP layer are stacked on an n-type InP substrate. Electrodes are formed on both sides of the top surface of the p-type layer, and an electrode is formed on the bottom surface of the n-type substrate. An incident light impinged upon the light-receiving element is photoelectricly-converged into a photocurrent, and the photocurrent flows in the p-type layer to the electrodes. As a result, a current is derived from each of the electrodes, the magnitude thereof being dependent on the distances from the light impinging position to respective electrodes. The barycenter of a light intensity may be calculated from the currents derived from the electrodes and a light intensity may be obtained from the summation of the currents.
摘要翻译： 光接收元件可以容易地检测光通信中具有长波长带的光的光强度的重心。 在n型InP衬底上堆叠InGaAs层（i型层）和p型InP层。 电极形成在p型层的顶表面的两侧，并且在n型衬底的底表面上形成电极。 照射在受光元件上的入射光被光电收敛成光电流，光电流在p型层中流向电极。 结果，从每个电极导出电流，其大小取决于从光入射位置到各个电极的距离。 光强度的重心可以根据从电极导出的电流计算，并且可以从电流的总和获得光强度。
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公开(公告)号：US20050058454A1
公开(公告)日：2005-03-17
申请号：US10959960
申请日：2004-10-06
申请人： Takashi Tagami , Kenichi Nakama
发明人： Takashi Tagami , Kenichi Nakama
IPC分类号： H01L31/0232 , G01J1/42 , G01J3/28 , G01J3/36 , H01L31/02 , H01L31/0304 , H01L31/105 , H01L31/16 , H04J14/08
CPC分类号： G01J9/00 , G01J1/42 , G01J3/2803 , G01J3/36 , H01L31/02024 , H01L31/03046 , H01L31/105 , Y02E10/544
摘要： A light-receiving element may easily detect the barycenter of a light intensity of light having a long-wavelength band in an optical communication. An InGaAs layer (i-type layer) and a p-type InP layer are stacked on an n-type InP substrate. Electrodes are formed on both sides of the top surface of the p-type layer, and an electrode is formed on the bottom surface of the n-type substrate. An incident light impinged upon the light-receiving element is photoelectricly-converged into a photocurrent, and the photocurrent flows in the p-type layer to the electrodes. As a result, a current is derived from each of the electrodes, the magnitude thereof being dependent on the distances from the light impinging position to respective electrodes. The barycenter of a light intensity may be calculated from the currents derived from the electrodes and a light intensity may be obtained from the summation of the currents.
摘要翻译： 光接收元件可以容易地检测光通信中具有长波长带的光的光强度的重心。 在n型InP衬底上堆叠InGaAs层（i型层）和p型InP层。 电极形成在p型层的顶表面的两侧，并且在n型衬底的底表面上形成电极。 照射在受光元件上的入射光被光电收敛成光电流，光电流在p型层中流向电极。 结果，从每个电极导出电流，其大小取决于从光入射位置到各个电极的距离。 光强度的重心可以根据从电极导出的电流计算，并且可以从电流的总和获得光强度。
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公开(公告)号：US06432328B1
公开(公告)日：2002-08-13
申请号：US09757693
申请日：2001-01-10
IPC分类号： B29D1100
摘要： In a method for forming a planar microlens according to the present invention, a wet etching is conducted to a glass substrate for a stamper while it is covered with a mask. After the etching is conducted and the mask is removed a wet etching is conducted again to the glass substrate to form densely arranged concave portions thereon, and thereby a stamper is obtained. An uncured resin is applied on the forming surface of the stamper, a glass substrate for a planar microlens array (MLA) is pressed thereto, and thereby the uncured resin is formed. The uncured resin is cured by applying an ultraviolet irradiation thereto and the stamper is released therefrom. The resin layer is removed by a reactive ion etching and whereupon the substrate is etched in a form corresponding to the form of the resin layer and whereby an all-glass microlens of high precision is obtained.
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公开(公告)号：US07062178B1
公开(公告)日：2006-06-13
申请号：US09857634
申请日：2000-10-05
CPC分类号： G01J3/36 , G01J3/2803 , G02B6/29307 , G02B6/2931 , H01L27/1446 , H01L31/105 , H04B10/07953
摘要： A light demultiplexer in which a signal and a noise in each channel may be distinctly separated is provided. The light demultiplexer comprises a light-receiving element array for receiving light beams demultiplexed every wavelength from a wavelength multiplexed light beam and arranged in a straight line. The light-receiving element array includes a plurality of light-receiving elements for monitoring signals, and a plurality of light-receiving elements for monitoring noises. The light-receiving elements for monitoring signals and the light-receiving elements for monitoring noise are alternately arrayed in a straight line the direction thereof is the same as that of the arrangement of the demultiplexed light beams.
摘要翻译： 提供其中每个通道中的信号和噪声可以被明显分离的光解复用器。 光解复用器包括光接收元件阵列，用于接收从波长复用光束每波长解复用的光束并且被布置成直线。 光接收元件阵列包括用于监视信号的多个光接收元件和用于监视噪声的多个光接收元件。 用于监视信号的光接收元件和用于监测噪声的光接收元件交替地排列成直线，其方向与解复用的光束的布置方向相同。
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6.发明授权Edge-emitting light-emitting device having improved external luminous efficiency and self-scanning light-emitting device array comprising the same 有权具有改进的外部发光效率的边缘发射发光器件和包括其的自扫描发光器件阵列公开(公告)号：US06717182B1
公开(公告)日：2004-04-06
申请号：US09762520
申请日：2001-02-08
申请人： Takashi Tagami , Yukihisa Kusuda , Seiji Ohno , Nobuyuki Komaba
发明人： Takashi Tagami , Yukihisa Kusuda , Seiji Ohno , Nobuyuki Komaba
IPC分类号： H01L2715
CPC分类号： B41J2/45 , B41J2002/453 , H01L27/153 , H01L33/0016 , H01L33/145 , H01L33/20 , H01L33/38
摘要： A self-scanning light-emitting element array using an end face light-emitting thyristor having improved external emission efficiency is provided. To improve the external emission efficiency of the end face light-emitting thyristor, the present invention adopts such structure that the current injected from an anode is concentrated to near the end face of the light-emitting thyristor. A self-scanning light-emitting element array is implemented by using such end face light-emitting thyristor.
摘要翻译： 提供一种使用具有改善的外部发光效率的端面发光晶闸管的自扫描发光元件阵列。 为了提高端面发光晶闸管的外部发光效率，本发明采用从阳极注入的电流集中在发光晶闸管的端面附近的结构。 通过使用这种端面发光晶闸管实现自扫描发光元件阵列。
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7.发明授权Light-receiving element array device and optical demultiplexer using the same 失效光接收元件阵列器件和使用其的光解复用器公开(公告)号：US06710330B1
公开(公告)日：2004-03-23
申请号：US09744541
申请日：2001-01-25
申请人： Takashi Tagami , Kenichi Nakama
发明人： Takashi Tagami , Kenichi Nakama
IPC分类号： H01J314
CPC分类号： H01L27/14643 , G02B6/29307 , G02B6/2931 , G02B6/4245 , G02B6/4249 , G02B6/4265 , G02B6/4274 , H01L27/14618 , H01L2224/05554 , H01L2224/48091 , H01L2224/48137 , H01L2924/00014 , H01L2924/15192 , H01L2224/45099
摘要： In the light-receiving element array device according to the present invention, a light-receiving section can be arranged at a position close to an input optical fiber so that the light-receiving element array device can be used as an optical demultiplexer based on the Littrow arrangement. Further the present invention enables suppression of coma aberration and minimization of an optical demultiplexer by shortening a length of the optical system. To achieve the above-described object, a rectangular chip having a light-receiving section with a number of light-receiving elements arrayed in row thereon is sealed in a rectangular package having external leads and the bonding pads on the chip and the bonding terminals of the packages are connected with a bonding wire or the like. This light-receiving element array device has any of the following constructions: (1) in which no bonding pad is provided along one longer edge of the chip in an area around a light-receiving section of the chip, (2) in which no bonding terminal is provided along one longer edge of the package, or (3) in which no external lead is provided along one longer edge of the package, or a combination of the constructions, and the chip is accommodated in the package at a position displaced to one side of the package.
摘要翻译： 在根据本发明的光接收元件阵列器件中，光接收部分可以布置在靠近输入光纤的位置处，使得光接收元件阵列器件可以用作基于 Littrow安排。 此外，本发明通过缩短光学系统的长度能够抑制彗形像差和光解复用器的最小化。 为了实现上述目的，将具有多个排列在其上的光接收元件的受光部分的矩形芯片密封在具有外部引线的矩形封装中，并且芯片上的接合焊盘和接合端子 封装与接合线等连接。 该光接收元件阵列器件具有以下结构之一：（1）其中在芯片的光接收部分周围的区域中沿着芯片的一个较长边缘没有设置焊盘，（2）其中不存在 沿着封装的一个较长的边缘设置接合端子，或者（3）其中沿着封装的一个较长边缘没有设置外部引线或者这些结构的组合，并且芯片被容纳在封装中的位置处 到包装的一边。
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8.发明授权公开(公告)号：US06919583B2
公开(公告)日：2005-07-19
申请号：US10776822
申请日：2004-02-11
申请人： Takashi Tagami , Yukihisa Kusuda , Seiji Ohno , Nobuyuki Komaba
发明人： Takashi Tagami , Yukihisa Kusuda , Seiji Ohno , Nobuyuki Komaba
CPC分类号： H01L27/153 , B41J2/45 , B41J2002/453 , H01L33/0016 , H01L33/145 , H01L33/20 , H01L33/38
摘要： An edge-emitting thyristor having an improved external luminous efficiency and a self-scanning light-emitting device array comprising the edge-emitting thyristor are disclosed. To improve the external luminous efficiency of an edge-emitting light-emitting thyristor, a structure where the current injected from an electrode concentrates on and near the edge of the light-emitting thyristor is adopted.
摘要翻译： 公开了具有改进的外部发光效率的边缘发射晶闸管和包括边缘发射晶闸管的自扫描发光器件阵列。 为了提高边缘发光发光晶闸管的外部发光效率，采用从电极注入的电流集中在发光晶闸管的边缘附近的结构。
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9.发明授权公开(公告)号：US06690002B2
公开(公告)日：2004-02-10
申请号：US09915477
申请日：2001-07-27
申请人： Yasunao Kuroda , Takashi Tagami , Kenichi Nakama
发明人： Yasunao Kuroda , Takashi Tagami , Kenichi Nakama
IPC分类号： H01J4014
CPC分类号： G01J3/18 , G01J3/0256 , G01J3/2803 , G02B6/2931 , G02B6/29385 , G02B6/4215 , H01L27/1443 , H01L27/14625 , H04J14/02
摘要： When a diffraction grating having a grating period of d and a diffraction order of m for an incident light having a wavelength interval &Dgr;&lgr;i between i'th and (i+1)'th channels is used, an optical path length between the diffraction grating and the photodetector is represented by L and a mean output angle is represented by &thgr;o, a pitch pi between the i'th and (i+1)'th photodetectors in the photodetector array satisfies the equation of pi=m&Dgr;&lgr;iL/d cos &thgr;o.
摘要翻译： 当使用具有第i和第（i + 1）个通道之间具有波长间隔Deltalambdai的入射光的光栅周期d和衍射级数为m的衍射光栅时，衍射光栅与 光电检测器由L表示，平均输出角由θo表示，光电检测器阵列中第i和第（i + 1）个光电检测器之间的间距p i满足pi = mDeltalambdaiL / dcosθo的方程。
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公开(公告)号：US4986841A
公开(公告)日：1991-01-22
申请号：US510843
申请日：1990-04-18
申请人： Keiji Oyoshi , Takashi Tagami , Shuhei Tanaka
发明人： Keiji Oyoshi , Takashi Tagami , Shuhei Tanaka
CPC分类号： C03C23/0055
摘要： The present invention concerns a method of preparing an alkali metal diffusion-preventive layer by applying one of three specific methods in a method of forming an alkali metal diffusion-preventive layer containing phosphorus at the inside of the substrate containing silicon by ion implantation of phosphorus, thereby enabling to prepare an alkali metal diffusion-preventive layer having higher alkali metal diffusion-preventive performance than that of the alkali metal diffusion-preventive layer prepared by the conventional method.
摘要翻译： 本发明涉及一种制备碱金属防扩散层的方法，该方法是在通过离子注入磷的含硅基材的内部形成含磷的碱金属防止扩散层的方法中，采用三种具体方法之一， 从而能够制备具有比通过常规方法制备的碱金属防扩散层更高的碱金属防扩散性能的碱金属防止扩散层。
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