公开(公告)号：US4986841A

公开(公告)日：1991-01-22

申请号：US510843

申请日：1990-04-18

申请人： Keiji Oyoshi ,  Takashi Tagami ,  Shuhei Tanaka

发明人： Keiji Oyoshi ,  Takashi Tagami ,  Shuhei Tanaka

IPC分类号： C23C14/06 ,  C03C23/00 ,  C23C14/08 ,  C23C14/58

CPC分类号： C03C23/0055

摘要： The present invention concerns a method of preparing an alkali metal diffusion-preventive layer by applying one of three specific methods in a method of forming an alkali metal diffusion-preventive layer containing phosphorus at the inside of the substrate containing silicon by ion implantation of phosphorus, thereby enabling to prepare an alkali metal diffusion-preventive layer having higher alkali metal diffusion-preventive performance than that of the alkali metal diffusion-preventive layer prepared by the conventional method.

摘要翻译： 本发明涉及一种制备碱金属防扩散层的方法，该方法是在通过离子注入磷的含硅基材的内部形成含磷的碱金属防止扩散层的方法中，采用三种具体方法之一， 从而能够制备具有比通过常规方法制备的碱金属防扩散层更高的碱金属防扩散性能的碱金属防止扩散层。

公开(公告)号：US5066514A

公开(公告)日：1991-11-19

申请号：US466838

申请日：1990-01-18

申请人： Keiji Oyoshi

发明人： Keiji Oyoshi

IPC分类号： G02B6/13 ,  C03C21/00 ,  C04B41/80 ,  G02B6/134

CPC分类号： C03C23/0055 ,  G02B6/1347

摘要： An optical wave guide is formed by implanting at least two ionic species capable of forming an oxide, a nitride or a halide into the surface of a substrate.

公开(公告)号：US5234843A

公开(公告)日：1993-08-10

申请号：US836796

申请日：1992-01-31

申请人： Keiji Oyoshi ,  Tomonori Yamaoka

发明人： Keiji Oyoshi ,  Tomonori Yamaoka

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L21/265 ,  H01L21/30 ,  H01L21/84

CPC分类号： H01L21/3003 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02667

摘要： Provided herein is a process for producing a polycrystalline semiconductor film at a low temperature. The process comprises the steps of depositing on a glass substrate by plasma CVD an amorphous silicon film containing the crystal phase as well as hydrogen, heating the film using a heater, thereby releasing hydrogen from the film, and growing the crystal phase by silicon ion implantation, thereby changing the amorphous silicon film into a polycrystalline silicon film containing crystal grains. The releasing of hydrogen from the amorphous silicon film permits the polycrystalline silicon film to be formed at a lower temperature than before without the growth of crystal phase being inhibited.

摘要翻译： 本文提供了一种在低温下制造多晶半导体膜的方法。 该方法包括以下步骤：通过等离子体CVD在玻璃衬底上沉积含有结晶相和氢的非晶硅膜，使用加热器加热膜，从而从膜中释放氢，并通过硅离子注入生长晶相 从而将非晶硅膜变成含有晶粒的多晶硅膜。 从非晶硅膜释放氢使得可以在比以前更低的温度下形成多晶硅膜，而不抑制结晶相的生长。