Plasma-CVD method and apparatus
    5.
    发明授权
    Plasma-CVD method and apparatus 失效
    等离子体CVD法和装置

    公开(公告)号:US5562952A

    公开(公告)日:1996-10-08

    申请号:US416477

    申请日:1995-04-04

    摘要: In a plasma-CVD method and apparatus, plasma is formed from a film material gas in a process chamber and, in the plasma, a film is deposited on a substrate disposed in the process chamber. Formation of the plasma from the material gas is performed by application of an rf-power prepared by effecting an amplitude modulation on a basic rf-power having a frequency in a range from 10 MHz to 200 MHz. A modulation frequency of the amplitude modulation is in a range from 1/1000 to 1/10 of the frequency of the basic rf-power. Alternatively, the rf-power is prepared by effecting on the basic rf-power a first amplitude modulation at a frequency in a range from 1/1000 to 1/10 of the frequency of the basic rf-power, and additionally effecting a second amplitude modulation on the modulated rf-power. A modulation frequency of the second amplitude modulation is in a range from 1/100 to 100 times the modulation frequency of the first amplitude modulation.

    摘要翻译: 在等离子体CVD方法和装置中,等离子体由处理室中的膜材料气体形成,并且在等离子体中,在设置在处理室中的基板上沉积膜。 通过施加通过对频率在10MHz至200MHz范围内的基本rf功率进行幅度调制而制备的rf功率来执行来自材料气体的等离子体的形成。 幅度调制的调制频率在基本rf功率的频率的1/1000到1/10的范围内。 或者,通过以基本rf功率的频率的1/1000〜1/10的频率对基本rf功率进行第一幅度调制来准备rf功率,并且另外实现第二振幅 调制rf功率的调制。 第二幅度调制的调制频率在第一幅度调制的调制频率的1/100到100倍的范围内。

    Plasma processing apparatus
    7.
    发明授权
    Plasma processing apparatus 失效
    等离子体处理装置

    公开(公告)号:US5556474A

    公开(公告)日:1996-09-17

    申请号:US357297

    申请日:1994-12-13

    摘要: In a plasma processing apparatus, wherein a power application electrode for generating plasma and an electrode opposed thereto are disposed in a process chamber which can be exhausted to attain a predetermined vacuum pressure, an electric power is applied to the power application electrode to generate the plasma from a process gas introduced between the electrodes, and intended plasma processing is effected on a substrate mounted on one of the electrodes in the plasma, the apparatus includes a particle discharge duct which surrounds a periphery and a rear side of the power application electrode and has an opening at a position neighboring to the periphery of the power application electrode, and an exhaust device connected to the duct at a position corresponding to a central portion of the rear side of the power application electrode.

    摘要翻译: 在等离子体处理装置中,其中用于产生等离子体的电力施加电极和与其相对的电极设置在能够排出以达到预定真空压力的处理室中,向功率施加电极施加电力以产生等离子体 从引入在电极之间的工艺气体,并且预期的等离子体处理在安装在等离子体中的一个电极上的基板上进行,该装置包括围绕电力施加电极的周边和后侧的颗粒排放管道,并且具有 在与施加电力电极的周围相邻的位置处的开口,以及在与电力施加电极的后侧的中心部分对应的位置连接到管道的排气装置。