公开(公告)号：US09200368B2

公开(公告)日：2015-12-01

申请号：US13207227

申请日：2011-08-10

申请人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

发明人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

IPC分类号： C23C16/455 ,  C23C16/34 ,  C23C16/509 ,  H01J37/32

CPC分类号： H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

摘要翻译： 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

公开(公告)号：US08203071B2

公开(公告)日：2012-06-19

申请号：US12178289

申请日：2008-07-23

申请人： Shuran Sheng ,  Yong Kee Chae ,  Soo Young Choi ,  Tae Kyung Won ,  Liwei Li

发明人： Shuran Sheng ,  Yong Kee Chae ,  Soo Young Choi ,  Tae Kyung Won ,  Liwei Li

IPC分类号： H01L31/00

CPC分类号： H01L31/1824 ,  H01L31/03685 ,  H01L31/076 ,  H01L31/1804 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： Embodiments of the present invention generally relate to solar cells and methods and apparatuses for forming the same. More particularly, embodiments of the present invention relate to thin film multi-junction solar cells and methods and apparatuses for forming the same. Embodiments of the present invention also include an improved thin film silicon solar cell, and methods and apparatus for forming the same, where one or more of the layers in the solar cell comprises at least one amorphous silicon layer that has improved electrical characteristics and mechanical properties, and is capable of being deposited at rates many times faster than conventional amorphous silicon deposition processes.

摘要翻译： 本发明的实施例一般涉及太阳能电池及其形成方法和装置。 更具体地，本发明的实施例涉及薄膜多结太阳能电池及其形成方法和装置。 本发明的实施例还包括改进的薄膜硅太阳能电池及其形成方法和装置，其中太阳能电池中的一个或多个层包括至少一个具有改善的电特性和机械性能的非晶硅层 ，并且能够以比常规非晶硅沉积工艺快许多倍的速率沉积。

公开(公告)号：US08110453B2

公开(公告)日：2012-02-07

申请号：US12425228

申请日：2009-04-16

申请人： Ya-Tang Yang ,  Beom Soo Park ,  Tae Kyung Won ,  Soo Young Choi ,  John M. White

发明人： Ya-Tang Yang ,  Beom Soo Park ,  Tae Kyung Won ,  Soo Young Choi ,  John M. White

IPC分类号： H01L21/84 ,  H01L21/336 ,  H01L21/20 ,  H01L29/786

CPC分类号： H01L29/4908 ,  H01L29/66765

摘要： A method and apparatus for forming a thin film transistor is provided. A gate dielectric layer is formed, which may be a bilayer, the first layer deposited at a low rate and the second deposited at a high rate. In some embodiments, the first dielectric layer is a silicon rich silicon nitride layer. An active layer is formed, which may also be a bilayer, the first active layer deposited at a low rate and the second at a high rate. The thin film transistors described herein have superior mobility and stability under stress.

摘要翻译： 提供一种用于形成薄膜晶体管的方法和装置。 形成栅电介质层，其可以是双层，第一层以低速率沉积，第二层以高速率沉积。 在一些实施例中，第一介电层是富硅的氮化硅层。 形成有源层，其也可以是双层，第一有源层以低速率沉积，第二有效层以高速率沉积。 本文所述的薄膜晶体管在应力下具有优异的迁移率和稳定性。

公开(公告)号：US20110290183A1

公开(公告)日：2011-12-01

申请号：US13207227

申请日：2011-08-10

申请人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

发明人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

IPC分类号： C23C16/455

CPC分类号： H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

摘要翻译： 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

公开(公告)号：US07884035B2

公开(公告)日：2011-02-08

申请号：US12082554

申请日：2008-04-11

申请人： Beom Soo Park ,  Soo Young Choi ,  Tae Kyung Won ,  John M. White

发明人： Beom Soo Park ,  Soo Young Choi ,  Tae Kyung Won ,  John M. White

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/5096 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/3185 ,  H01L29/4908 ,  H01L29/66765

摘要： We have discovered that adding H2 to a precursor gas composition including SiH4, NH3, and N2 is effective at improving the wet etch rate and the wet etch rate uniformity across the substrate surface of a-SiNx:H films which are deposited on a substrate by PECVD. Wet etch rate is an indication of film density. Typically, the lower the wet etch rate, the denser the film. The addition of H2 to the SiH4/NH3/N2 precursor gas composition did not significantly increase the variation in deposited film thickness across the surface of the substrate. The uniformity of the film across the substrate enables the production of flat panel displays having surface areas of 25,000 cm2 and larger.

摘要翻译： 我们已经发现，将H2添加到包括SiH 4，NH 3和N 2的前体气体组合物中是有效的，以提高沉积在衬底上的a-SiNx：H膜的衬底表面上的湿蚀刻速率和湿蚀刻速率均匀性， PECVD。 湿蚀刻速率是膜密度的指示。 通常，湿蚀刻速率越低，膜越致密。 向SiH 4 / NH 3 / N 2前体气体组合物中加入H 2没有显着增加穿过基材表面的沉积膜厚度的变化。 跨过基板的膜的均匀性使得能够生产具有25,000cm 2和更大的表面积的平板显示器。

公开(公告)号：US07879409B2

公开(公告)日：2011-02-01

申请号：US10898472

申请日：2004-07-23

申请人： Gaku Furuta ,  Tae Kyung Won ,  John M. White

发明人： Gaku Furuta ,  Tae Kyung Won ,  John M. White

IPC分类号： C08J7/04

CPC分类号： C23C16/0209 ,  C23C16/5096

摘要： We have a method of improving the deposition rate uniformity of the chemical vapor deposition (CVD) of films when a number of substrates are processed in series, sequentially in a deposition chamber. The method includes the plasma pre-heating of at least one processing volume structure within the processing volume which surrounds the substrate when the substrate is present in the deposition chamber. We also have a device-controlled method which adjusts the deposition time for a few substrates at the beginning of the processing of a number of substrates in series, sequentially in a deposition chamber, so that the deposited film thickness remains essentially constant during processing of the series of substrates. A combination of these methods into a single method provides the best overall results in terms of controlling average film thickness from substrate to substrate.

摘要翻译： 当在沉积室中顺序地处理多个基板时，我们具有提高膜的化学气相沉积（CVD）的沉积速率均匀性的方法。 该方法包括当衬底存在于沉积室中时，围绕衬底的处理体积内的至少一个处理体积结构的等离子体预热。 我们还有一种装置控制的方法，其可以在沉积室中顺次地串联处理多个基板的开始时调整几个基板的沉积时间，使得沉积膜厚度在处理期间保持基本恒定 系列底物。 将这些方法组合成单一方法提供了从基材到底物控制平均膜厚度方面的最佳总体结果。

公开(公告)号：US20090261331A1

公开(公告)日：2009-10-22

申请号：US12425228

申请日：2009-04-16

申请人： Ya-Tang Yang ,  Beom Soo Park ,  Tae Kyung Won ,  Soo Young Choi ,  John M. White

发明人： Ya-Tang Yang ,  Beom Soo Park ,  Tae Kyung Won ,  Soo Young Choi ,  John M. White

IPC分类号： H01L29/786 ,  H01L21/20

CPC分类号： H01L29/4908 ,  H01L29/66765

摘要： A method and apparatus for forming a thin film transistor is provided. A gate dielectric layer is formed, which may be a bilayer, the first layer deposited at a low rate and the second deposited at a high rate. In some embodiments, the first dielectric layer is a silicon rich silicon nitride layer. An active layer is formed, which may also be a bilayer, the first active layer deposited at a low rate and the second at a high rate. The thin film transistors described herein have superior mobility and stability under stress.

摘要翻译： 提供一种用于形成薄膜晶体管的方法和装置。 形成栅电介质层，其可以是双层，第一层以低速率沉积，第二层以高速率沉积。 在一些实施例中，第一介电层是富硅的氮化硅层。 形成有源层，其也可以是双层，第一有源层以低速率沉积，第二有效层以高速率沉积。 本文所述的薄膜晶体管在应力下具有优异的迁移率和稳定性。

公开(公告)号：US20090022908A1

公开(公告)日：2009-01-22

申请号：US11833983

申请日：2007-08-04

申请人： Ya-Tang YANG ,  Tae Kyung WON ,  Soo Young CHOI ,  Takako TAKEHARA ,  John M. WHITE

发明人： Ya-Tang YANG ,  Tae Kyung WON ,  Soo Young CHOI ,  Takako TAKEHARA ,  John M. WHITE

IPC分类号： H05H1/24

CPC分类号： H01J37/32357 ,  C23C16/24 ,  C23C16/345 ,  C23C16/5096 ,  H01J37/32091

摘要： Methods for forming a film stack suitable for transistor fabrication using a low temperature plasma enhanced chemical vapor deposition (PECVD) process are provided. In one embodiment, the method includes providing a substrate in a PECVD chamber, depositing a dual layer SiNx film on the substrate, depositing a dual layer amorphous silicon film on the SiNx film, and depositing a n-doped silicon film on the dual layer amorphous silicon film. The aforementioned films are deposited at a temperature less than about 300 degrees Celsius in the same PECVD chamber

摘要翻译： 提供了使用低温等离子体增强化学气相沉积（PECVD）工艺形成适用于晶体管制造的膜堆叠的方法。 在一个实施例中，该方法包括在PECVD室中提供衬底，在衬底上沉积双层SiNx膜，在SiNx膜上沉积双层非晶硅膜，以及在双层非晶体上沉积n掺杂硅膜 硅膜。 上述膜在相同的PECVD室中以低于约300摄氏度的温度沉积

公开(公告)号：US20080305246A1

公开(公告)日：2008-12-11

申请号：US11759542

申请日：2007-06-07

申请人： Soo Young Choi ,  Tae Kyung Won ,  Beom Soo Park ,  John M. White

发明人： Soo Young Choi ,  Tae Kyung Won ,  Beom Soo Park ,  John M. White

IPC分类号： C23C16/00 ,  B05D5/12

CPC分类号： C23C16/45565 ,  H01L31/182 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/546 ,  Y02P70/521

摘要： Methods and apparatus having a gradient spacing created between a substrate support assembly and a gas distribution plate for depositing a silicon film for solar cell applications are provided. In one embodiment, an apparatus for depositing films for solar cell applications may include a processing chamber, a substrate support disposed in the processing chamber and configured to support a quadrilateral substrate thereon, and a gas distribution plate disposed in the processing chamber above the substrate support, wherein a bottom surface of the gas distribution plate has a perimeter that includes edges and corners, and wherein the corners of the gas distribution plate are closer to the substrate support than the edges of the gas distribution plate.

摘要翻译： 提供了在衬底支撑组件和用于沉积太阳能电池应用的硅膜的气体分配板之间产生梯度间隔的方法和装置。 在一个实施例中，一种用于沉积太阳能电池薄膜的设备可以包括处理室，设置在处理室中的基板支撑件，并且被配置为在其上支撑四边形基板，以及布置在处理室中的基板支撑件上方的气体分配板 其中，所述气体分配板的底面具有包括边缘和角部的周边，并且其中所述气体分配板的角部比所述气体分配板的边缘更靠近所述基板支撑。

公开(公告)号：US20080289687A1

公开(公告)日：2008-11-27

申请号：US11752823

申请日：2007-05-23

申请人： TAE KYUNG WON ,  Soo Young Choi ,  Yong Kee Chae ,  Liwei Li ,  Shuran Sheng

发明人： TAE KYUNG WON ,  Soo Young Choi ,  Yong Kee Chae ,  Liwei Li ,  Shuran Sheng

IPC分类号： H01L31/04

CPC分类号： H01L31/022466 ,  H01L31/04 ,  H01L31/1884 ,  Y02E10/50 ,  Y10S438/94

摘要： Methods and apparatus for reducing defects on transmitting conducting oxide (TCO) layer are provided. The method includes a method of laser scribing a TCO layer for solar cell applications. In one embodiment, a method for depositing a silicon layer on a transmitting conducting oxide (TCO) layer may include laser scribing a cell-integrated region of a TCO layer disposed on a substrate for solar applications, the TCO layer having a laser scribing free periphery region outward of the cell-integrated region, the periphery region having a width between about 10 mm and about 30 mm measured from an edge of the substrate, transferring the scribed substrate into a deposition chamber, and depositing a silicon containing layer on the TCO layer in the deposition chamber.

摘要翻译： 提供了减少传导导电氧化物（TCO）层缺陷的方法和装置。 该方法包括激光划片用于太阳能电池应用的TCO层的方法。 在一个实施例中，用于在透射导电氧化物（TCO）层上沉积硅层的方法可以包括激光刻划设置在用于太阳能应用的衬底上的TCO层的电池集成区域，TCO层具有激光划线自由周边 所述外围区域具有从所述基板的边缘测量的约10mm至约30mm之间的宽度，将所述划线基板转印到沉积室中，并且在所述TCO层上沉积含硅层 在沉积室中。