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    Method of cleaning a CVD processing chamber
    1.
    发明申请
    Method of cleaning a CVD processing chamber 审中-公开
    清洗CVD处理室的方法

    公开(公告)号：US20110041873A1

    公开(公告)日：2011-02-24

    申请号：US12925767

    申请日：2010-10-28

    申请人： Gaku Furuta ,  Tae Kyung Won ,  John M. White

    发明人： Gaku Furuta ,  Tae Kyung Won ,  John M. White

    IPC分类号： B08B7/00

    CPC分类号： C23C16/0209 ,  C23C16/5096

    摘要： We have a method of improving the deposition rate uniformity of the chemical vapor deposition (CVD) of films when a number of substrates are processed in series, sequentially in a deposition chamber. The method includes the plasma pre-heating of at least one processing volume structure within the processing volume which surrounds the substrate when the substrate is present in the deposition chamber. We also have a device-controlled method which adjusts the deposition time for a few substrates at the beginning of the processing of a number of substrates in series, sequentially in a deposition chamber, so that the deposited film thickness remains essentially constant during processing of the series of substrates. A combination of these methods into a single method provides the best overall results in terms of controlling average film thickness from substrate to substrate.

    摘要翻译： 当在沉积室中顺序地处理多个基板时，我们具有提高膜的化学气相沉积（CVD）的沉积速率均匀性的方法。 该方法包括当衬底存在于沉积室中时，围绕衬底的处理体积内的至少一个处理体积结构的等离子体预热。 我们还有一种装置控制的方法，其可以在沉积室中顺次地串联处理多个基板的开始时调整几个基板的沉积时间，使得沉积膜厚度在处理期间保持基本恒定 系列底物。 将这些方法组合成单一方法提供了从基材到底物控制平均膜厚度方面的最佳总体结果。

    Repeatability of CVD film deposition during sequential processing of substrates in a deposition chamber
    2.
    发明授权
    Repeatability of CVD film deposition during sequential processing of substrates in a deposition chamber 有权
    在沉积室中的衬底的顺序处理期间CVD膜沉积的重复性

    公开(公告)号：US07879409B2

    公开(公告)日：2011-02-01

    申请号：US10898472

    申请日：2004-07-23

    申请人： Gaku Furuta ,  Tae Kyung Won ,  John M. White

    发明人： Gaku Furuta ,  Tae Kyung Won ,  John M. White

    IPC分类号： C08J7/04

    CPC分类号： C23C16/0209 ,  C23C16/5096

    摘要： We have a method of improving the deposition rate uniformity of the chemical vapor deposition (CVD) of films when a number of substrates are processed in series, sequentially in a deposition chamber. The method includes the plasma pre-heating of at least one processing volume structure within the processing volume which surrounds the substrate when the substrate is present in the deposition chamber. We also have a device-controlled method which adjusts the deposition time for a few substrates at the beginning of the processing of a number of substrates in series, sequentially in a deposition chamber, so that the deposited film thickness remains essentially constant during processing of the series of substrates. A combination of these methods into a single method provides the best overall results in terms of controlling average film thickness from substrate to substrate.

    摘要翻译： 当在沉积室中顺序地处理多个基板时，我们具有提高膜的化学气相沉积（CVD）的沉积速率均匀性的方法。 该方法包括当衬底存在于沉积室中时，围绕衬底的处理体积内的至少一个处理体积结构的等离子体预热。 我们还有一种装置控制的方法，其可以在沉积室中顺次地串联处理多个基板的开始时调整几个基板的沉积时间，使得沉积膜厚度在处理期间保持基本恒定 系列底物。 将这些方法组合成单一方法提供了从基材到底物控制平均膜厚度方面的最佳总体结果。

    ROBUST OUTLET PLUMBING FOR HIGH POWER FLOW REMOTE PLASMA SOURCE
    5.
    发明申请
    ROBUST OUTLET PLUMBING FOR HIGH POWER FLOW REMOTE PLASMA SOURCE 审中-公开
    大功率流量远程等离子体源的稳健出口

    公开(公告)号：US20090283039A1

    公开(公告)日：2009-11-19

    申请号：US12467477

    申请日：2009-05-18

    申请人： JOHN M. WHITE ,  Soo Young Choi ,  Beom Soo Park ,  Gaku Furuta ,  Young Jin Choi ,  Robin L. Tiner

    发明人： JOHN M. WHITE ,  Soo Young Choi ,  Beom Soo Park ,  Gaku Furuta ,  Young Jin Choi ,  Robin L. Tiner

    IPC分类号： C23C16/54 ,  F28D7/00

    CPC分类号： F28D7/00 ,  C23C16/4405 ,  F28D2021/0078 ,  F28F9/26

    摘要： The present invention generally includes a coupling between components. When igniting a plasma remote from a processing chamber, the reactive gas ions may travel to the processing chamber through numerous components. The reactive gas ions may be quite hot and cause the various components to become very hot and thus, the seals between apparatus components may fail. Therefore, it may be beneficial to cool any metallic components through which the reactive gas ions may travel. However, at the interface between the cooled metallic component and a ceramic component, the ceramic component may experience a temperature gradient sufficient to crack the ceramic material due to the heat of the reactive gas ions and the coolness of the metallic component. Therefore, extending a flange of the metallic component into the ceramic component may lessen the temperature gradient at the interface and reduce cracking of the ceramic component.

    摘要翻译： 本发明通常包括组件之间的联接。 当点燃离开处理室的等离子体时，反应气体离子可通过许多部件行进到处理室。 反应气体离子可能相当热，并导致各种部件变得非常热，因此，装置部件之间的密封可能失效。 因此，冷却反应气体离子可以通过其移动的任何金属组分可能是有益的。 然而，在冷却的金属组分和陶瓷组分之间的界面处，由于反应气体离子的热量和金属组分的冷却，陶瓷组分可能经历足以破坏陶瓷材料的温度梯度。 因此，将金属部件的凸缘延伸到陶瓷部件中可以减小界面处的温度梯度并减少陶瓷部件的开裂。

    GAS DISTRIBUTION UNIFORMITY IMPROVEMENT BY BAFFLE PLATE WITH MULTI-SIZE HOLES FOR LARGE SIZE PECVD SYSTEMS
    6.
    发明申请
    GAS DISTRIBUTION UNIFORMITY IMPROVEMENT BY BAFFLE PLATE WITH MULTI-SIZE HOLES FOR LARGE SIZE PECVD SYSTEMS 审中-公开
    气体分布均匀度改进由具有多个尺寸PECVD系统的多尺寸孔板

    公开(公告)号：US20080178807A1

    公开(公告)日：2008-07-31

    申请号：US12099112

    申请日：2008-04-07

    申请人： Qunhua Wang ,  Li Hou ,  Sanjay Yadav ,  Gaku Furuta ,  Kenji Omori ,  Soo Young Choi ,  John M. White

    发明人： Qunhua Wang ,  Li Hou ,  Sanjay Yadav ,  Gaku Furuta ,  Kenji Omori ,  Soo Young Choi ,  John M. White

    IPC分类号： C23C16/00

    CPC分类号： H01J37/3244 ,  C23C16/45565 ,  C23F4/00 ,  H01J37/32449

    摘要： Embodiments of a gas distribution plate for distributing gas in a processing chamber for large area substrates are provided. The embodiments describe a gas distribution plate assembly for a plasma processing chamber having a cover plate comprises a diffuser plate having an upstream side, a downstream side facing a processing region, and a plurality of gas passages formed through the diffuser plate, and a baffle plate, placed between the cover plate of the process chamber and the diffuser plate, having a plurality of holes extending from the upper surface to the lower surface of the baffle plate, wherein the plurality of holes have at least two sizes. The small pinholes of the baffle plate are used to allow sufficient pass-through of gas mixture, while the large holes of the baffle plate are used to improve the process uniformity across the substrate.

    摘要翻译： 提供了用于在大面积基板的处理室中分配气体的气体分配板的实施例。 实施方式描述了一种用于等离子体处理室的气体分配板组件，其具有盖板，该盖板包括具有上游侧，面向加工区域的下游侧和通过扩散板形成的多个气体通道的扩散板，以及挡板 ，放置在处理室的盖板和扩散板之间，具有从挡板的上表面延伸到下表面的多个孔，其中多个孔具有至少两个尺寸。 挡板的小针孔用于允许气体混合物的充分通过，而挡板的大孔用于改善基板上的工艺均匀性。

    ANODIZED SHOWERHEAD
    8.
    发明申请
    ANODIZED SHOWERHEAD 有权
    阳光淋浴

    公开(公告)号：US20100288197A1

    公开(公告)日：2010-11-18

    申请号：US12779167

    申请日：2010-05-13

    申请人： Soo Young Choi ,  Suhail Anwar ,  Gaku Furuta ,  Beom Soo Park ,  Robin L. Tiner ,  John M. White ,  Shinichi Kurita

    发明人： Soo Young Choi ,  Suhail Anwar ,  Gaku Furuta ,  Beom Soo Park ,  Robin L. Tiner ,  John M. White ,  Shinichi Kurita

    IPC分类号： C23C16/455 ,  C23C16/00

    CPC分类号： C23C16/45565 ,  C23C16/4404 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32559 ,  H01J37/32577

    摘要： Embodiments disclosed herein generally relate to an apparatus having an anodized gas distribution showerhead. In large area, parallel plate RF processing chambers, mastering the RF return path can be challenging. Arcing is a frequent problem encountered in RF processing chambers. To reduce arcing in RF processing chambers, straps may be coupled to the susceptor to shorten the RF return path, a ceramic or insulating or anodized shadow frame may be coupled to the susceptor during processing, and an anodized coating may be deposited onto the edge of the showerhead that is nearest the chamber walls. The anodized coating may reduce arcing between the showerhead and the chamber walls and therefore enhance film properties and increase deposition rate.

    摘要翻译： 本文公开的实施方案通常涉及具有阳极氧化气体分配喷头的装置。 在大面积的平行板RF处理室中，掌握RF返回路径可能具有挑战性。 射频是RF处理室遇到的一个常见问题。 为了减少RF处理室中的电弧，带可以耦合到基座以缩短RF返回路径，陶瓷或绝缘或阳极氧化的阴影框架可以在处理期间耦合到基座，并且阳极化涂层可以沉积在 最靠近室壁的淋浴头。 阳极化涂层可以减少喷头和室壁之间的电弧，并因此增强膜的性质并增加沉积速率。

    FLIP EDGE SHADOW FRAME
    9.
    发明申请
    FLIP EDGE SHADOW FRAME 审中-公开
    卷边边框

    公开(公告)号：US20130263782A1

    公开(公告)日：2013-10-10

    申请号：US13569064

    申请日：2012-08-07

    申请人： QUNHUA WANG ,  Soo Young Choi ,  Robin L. Tiner ,  John M. White ,  Gaku Furuta ,  Beom Soo Park

    发明人： QUNHUA WANG ,  Soo Young Choi ,  Robin L. Tiner ,  John M. White ,  Gaku Furuta ,  Beom Soo Park

    IPC分类号： C23C16/04

    摘要： Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate.

    摘要翻译： 本文描述了用于处理衬底的装置。 用于控制基板上的沉积的装置可以包括：腔室，其包括阴影框架支撑件，包括基板支撑表面的基板支撑件，具有包括第一支撑表面的阴影框架主体的阴影框架，与第一表面相对的第二支撑表面， 以及与阴影框体连接的可拆卸唇缘。 可拆卸唇缘可以包括支撑连接，面向基底的第一唇缘表面，与第一唇缘表面相对的第二唇缘表面，位于第一支撑表面上方的第一边缘以及与第一边缘相对的第二边缘以接触基底。