公开(公告)号：US07923354B2

公开(公告)日：2011-04-12

申请号：US12563837

申请日：2009-09-21

申请人： Soo Young Choi ,  Takako Takehara ,  John M. White ,  Yong Kee Chae

发明人： Soo Young Choi ,  Takako Takehara ,  John M. White ,  Yong Kee Chae

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02579 ,  C23C16/24 ,  C30B25/105 ,  C30B29/06 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32495 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L31/1824 ,  Y02E10/545 ,  Y02P70/521

摘要： Methods for depositing a microcrystalline silicon film layer with improved deposition rate and film quality are provided in the present invention. Also, a photovoltaic (PV) cell having a microcrystalline silicon film is provided. In one embodiment, the method produces a microcrystalline silicon film on a substrate at a deposition rate greater than about 20 nm per minute, wherein the microcrystalline silicon film has a crystallized volume between about 20 percent to about 80 percent.

摘要翻译： 在本发明中提供了具有改进的沉积速率和膜质量的沉积微晶硅膜层的方法。 此外，提供具有微晶硅膜的光伏（PV）电池。 在一个实施例中，该方法以大于约20nm /分钟的沉积速率在衬底上产生微晶硅膜，其中微晶硅膜的结晶体积在约20％至约80％之间。

公开(公告)号：US20100075453A1

公开(公告)日：2010-03-25

申请号：US12626335

申请日：2009-11-25

申请人： Shinichi Kurita ,  Takako Takehara ,  Suhail Anwar

发明人： Shinichi Kurita ,  Takako Takehara ,  Suhail Anwar

IPC分类号： H01L31/18

CPC分类号： H01L31/206 ,  H01L21/67155 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/67207 ,  H01L21/67236 ,  Y02E10/50 ,  Y02P70/521

摘要： A method and apparatus for forming solar panels from n-doped silicon, p-doped silicon, intrinsic amorphous silicon, and intrinsic microcrystalline silicon using a cluster tool is disclosed. The cluster tool comprises at least one load lock chamber and at least one transfer chamber. When multiple clusters are used, at least one buffer chamber may be present between the clusters. A plurality of processing chambers are attached to the transfer chamber. As few as five and as many as thirteen processing chambers can be present.

摘要翻译： 公开了一种使用簇工具从n掺杂硅，p掺杂硅，本征非晶硅和本征微晶硅形成太阳能电池板的方法和装置。 集群工具包括至少一个装载锁定室和至少一个传送室。 当使用多个簇时，可以在簇之间存在至少一个缓冲室。 多个处理室附接到传送室。 只有五个和多达十三个处理室可以存在。

公开(公告)号：US20100003780A1

公开(公告)日：2010-01-07

申请号：US12563837

申请日：2009-09-21

申请人： Soo Young Choi ,  Takako Takehara ,  John M. White ,  Yong Kee Chae

发明人： Soo Young Choi ,  Takako Takehara ,  John M. White ,  Yong Kee Chae

IPC分类号： H01L21/20 ,  H01L31/18

CPC分类号： H01L21/02579 ,  C23C16/24 ,  C30B25/105 ,  C30B29/06 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32495 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L31/1824 ,  Y02E10/545 ,  Y02P70/521

摘要： Methods for depositing a microcrystalline silicon film layer with improved deposition rate and film quality are provided in the present invention. Also, a photovoltaic (PV) cell having a microcrystalline silicon film is provided. In one embodiment, the method produces a microcrystalline silicon film on a substrate at a deposition rate greater than about 20 nm per minute, wherein the microcrystalline silicon film has a crystallized volume between about 20 percent to about 80 percent.

摘要翻译： 在本发明中提供了具有改进的沉积速率和膜质量的沉积微晶硅膜层的方法。 此外，提供具有微晶硅膜的光伏（PV）电池。 在一个实施例中，该方法以大于约20nm /分钟的沉积速率在衬底上产生微晶硅膜，其中微晶硅膜的结晶体积在约20％至约80％之间。

公开(公告)号：US20090022908A1

公开(公告)日：2009-01-22

申请号：US11833983

申请日：2007-08-04

申请人： Ya-Tang YANG ,  Tae Kyung WON ,  Soo Young CHOI ,  Takako TAKEHARA ,  John M. WHITE

发明人： Ya-Tang YANG ,  Tae Kyung WON ,  Soo Young CHOI ,  Takako TAKEHARA ,  John M. WHITE

IPC分类号： H05H1/24

CPC分类号： H01J37/32357 ,  C23C16/24 ,  C23C16/345 ,  C23C16/5096 ,  H01J37/32091

摘要： Methods for forming a film stack suitable for transistor fabrication using a low temperature plasma enhanced chemical vapor deposition (PECVD) process are provided. In one embodiment, the method includes providing a substrate in a PECVD chamber, depositing a dual layer SiNx film on the substrate, depositing a dual layer amorphous silicon film on the SiNx film, and depositing a n-doped silicon film on the dual layer amorphous silicon film. The aforementioned films are deposited at a temperature less than about 300 degrees Celsius in the same PECVD chamber

摘要翻译： 提供了使用低温等离子体增强化学气相沉积（PECVD）工艺形成适用于晶体管制造的膜堆叠的方法。 在一个实施例中，该方法包括在PECVD室中提供衬底，在衬底上沉积双层SiNx膜，在SiNx膜上沉积双层非晶硅膜，以及在双层非晶体上沉积n掺杂硅膜 硅膜。 上述膜在相同的PECVD室中以低于约300摄氏度的温度沉积

公开(公告)号：US20080087960A1

公开(公告)日：2008-04-17

申请号：US11946040

申请日：2007-11-27

申请人： Mark Hsiao ,  Dong-Kil Yim ,  Takako Takehara ,  Quanyuan Shang ,  William Harshbarger ,  Woong-Kwon Kim ,  Duk-Chul Yun ,  Youn-Gyung Chang

发明人： Mark Hsiao ,  Dong-Kil Yim ,  Takako Takehara ,  Quanyuan Shang ,  William Harshbarger ,  Woong-Kwon Kim ,  Duk-Chul Yun ,  Youn-Gyung Chang

IPC分类号： H01L29/786 ,  H01L21/441

CPC分类号： H01L29/66765 ,  H01L29/4908 ,  H01L29/78669 ,  H01L29/78678

摘要： Method of fabricating a thin-film transistor (TFT) in which a gate metal is deposited onto a substrate in order to form the gate of the thin-film transistor. The substrate may be an insulative substrate or a color filter. In a first method, the gate metal is subjected to an H2 plasma. After subjecting the gate metal to an H2 plasma, the gate insulating film is deposited onto the gate. In a second method, first and second layers of gate insulating film are respectively deposited on the gate at a first and second deposition rates. One layer is deposited under H2 or argon dilution conditions and has improved insulating conditions while the other layer serves to lower the overall compressive stress of the dual layer gate insulator. In a third method, an n+ silicon film is formed on a substrate by maintaining a flow of silane, phosphine and hydrogen gas into a processing chamber at substrate temperatures of about 300° C. or less.

摘要翻译： 制造薄膜晶体管（TFT）的方法，其中栅极金属沉积到衬底上以形成薄膜晶体管的栅极。 衬底可以是绝缘衬底或滤色器。 在第一种方法中，栅极金属经受H 2 H 2等离子体。 在栅极金属经受H 2等离子体后，栅极绝缘膜沉积在栅极上。 在第二种方法中，第一和第二栅极绝缘膜层分别以第一和第二沉积速率沉积在栅极上。 一层沉积在H 2 N或氩稀释条件下，并具有改善的绝缘条件，而另一层用于降低双层栅极绝缘体的整体压应力。 在第三种方法中，通过在约300℃或更低的衬底温度下保持硅烷，膦和氢气流入处理室，在衬底上形成n + +硅膜。

公开(公告)号：US20080025821A1

公开(公告)日：2008-01-31

申请号：US11459655

申请日：2006-07-25

申请人： John M. White ,  Takako Takehara

发明人： John M. White ,  Takako Takehara

IPC分类号： H01L21/677

CPC分类号： H01L21/67196 ,  H01L21/67742

摘要： A method and apparatus for processing substrates in a cluster tool is disclosed. The transfer chambers of the cluster tool have eight locations to which additional chambers (i.e., load lock, buffer, and processing chambers) may attach. The transfer chamber may be formed of three separate portions. The central portion may be a rectangular shaped portion. The two other portions may be trapezoidal shaped portions. The trapezoidal shaped portions each have three slots through which the substrate can move for processing. The central portion of the transfer chamber may have a removable lid that allows a technician to easily access the transfer chamber.

摘要翻译： 公开了一种用于在集群工具中处理衬底的方法和装置。 集群工具的传送室具有八个位置，附加的室（即，装载锁定，缓冲器和处理室）可附接到该位置。 传送室可以由三个分开的部分形成。 中心部分可以是矩形部分。 另外两个部分可以是梯形形状的部分。 梯形形状部分每个具有三个狭缝，基板可以通过三个槽移动以用于处理。 传送室的中心部分可以具有可移除的盖，其允许技术人员容易地接近传送室。

公开(公告)号：US20070254112A1

公开(公告)日：2007-11-01

申请号：US11411666

申请日：2006-04-26

申请人： Takako Takehara ,  Inchen Huang ,  John White

发明人： Takako Takehara ,  Inchen Huang ,  John White

IPC分类号： B08B6/00 ,  B08B9/00 ,  H05H1/24

CPC分类号： C23C16/4405 ,  B08B7/0035 ,  C23C16/54 ,  H01J37/32357 ,  H01J37/32862

摘要： A method for processing a plurality of substrates in a processing system having four or more process chambers is provided. Each substrate is processed in at least four of the four or more process chambers. Each of the four or more process chambers is cleaned after processing fifteen or less substrates, wherein cleaning of each chamber is scheduled at distinct, non-overlapping time periods to enhance throughput of the substrates through the processing system.

摘要翻译： 提供了一种在具有四个或更多个处理室的处理系统中处理多个基板的方法。 在四个或更多个处理室中的至少四个处理室中处理每个衬底。 在处理十五个或更少的基板之后，四个或更多个处理室中的每一个被清洁，其中每个室的清洁被调整在不同的非重叠时间段，以增加通过处理系统的基板的通过量。

公开(公告)号：US20050233155A1

公开(公告)日：2005-10-20

申请号：US11147746

申请日：2005-06-08

申请人： Tae Won ,  Takako Takehara ,  William Harshbarger

发明人： Tae Won ,  Takako Takehara ,  William Harshbarger

IPC分类号： C23C16/40 ,  C23C16/458 ,  C23C16/46 ,  H01L21/312 ,  H01L21/316 ,  C23C16/00 ,  B32B9/04

CPC分类号： C23C16/401 ,  C23C16/4586 ,  C23C16/46 ,  Y10T428/26

摘要： Processes for controlling thickness uniformity of thin organosilicate films as they are deposited on a substrate, and as they finally result. During deposition of the film, which may be accomplished by CVD, PECVD, rapid thermal processing or the like, the substrate temperature is controlled to establish a temperature profile particularly suited to the extreme temperature sensitivities of the deposition rates of organosilicate films such as those deposited from TEOS as a source material.

公开(公告)号：US06352910B1

公开(公告)日：2002-03-05

申请号：US09249041

申请日：1999-02-12

申请人： William R. Harshbarger ,  Takako Takehara ,  Jeff C. Olsen ,  Regina Qiu ,  Yvonne LeGrice ,  Guofu J. Feng ,  Robert M. Robertson ,  Kam Law

发明人： William R. Harshbarger ,  Takako Takehara ,  Jeff C. Olsen ,  Regina Qiu ,  Yvonne LeGrice ,  Guofu J. Feng ,  Robert M. Robertson ,  Kam Law

IPC分类号： H01L2120

CPC分类号： C23C16/24

摘要： Deposition methods for preparing amorphous silicon based films with controlled resistivity and low stress are described. Such films can be used as the interlayer in FED manufacturing. They can also be used in other electronic devices which require films with controlled resistivity in the range between those of an insulator and of a conductor. The deposition methods described in the present invention employ the method of chemical vapor deposition or plasma-enhanced chemical vapor deposition; other film deposition techniques, such as physical vapor deposition, also may be used. In one embodiment, an amorphous silicon-based film is formed by introducing into a deposition chamber a silicon-based volatile, a conductivity-increasing volatile including one or more components for increasing the conductivity of the amorphous silicon-based film, and a conductivity-decreasing volatile including one or more components for decreasing the conductivity of the amorphous silicon-based film.

摘要翻译： 描述了制备具有受控电阻率和低应力的非晶硅基膜的沉积方法。 这种膜可用作FED制造中的中间层。 它们也可用于需要具有在绝缘体和导体之间的范围内的受控电阻率的膜的其它电子器件。 本发明中描述的沉积方法采用化学气相沉积或等离子体增强化学气相沉积的方法; 也可以使用其它成膜技术，例如物理气相沉积。 在一个实施方案中，通过向沉积室中引入硅基挥发物，包含一种或多种用于增加非晶硅基膜的导电性的组分的增加电导率的挥发性，并且导电性 - 降低挥发性，包括一种或多种用于降低非晶硅基膜的导电性的组分。

公开(公告)号：US06172322B2

公开(公告)日：2001-01-09

申请号：US08965939

申请日：1997-11-07

申请人： Quanyuan Shang ,  Robert McCormick Robertson ,  Kam S. Law ,  Takako Takehara ,  Taekyung Won ,  Sheng Sun

发明人： Quanyuan Shang ,  Robert McCormick Robertson ,  Kam S. Law ,  Takako Takehara ,  Taekyung Won ,  Sheng Sun

IPC分类号： H05B680

CPC分类号： C23C16/56

摘要： A system and method for annealing a film on a substrate in a processing chamber, including a microwave generator disposed to provide microwaves to an area within the interior of the chamber. The microwaves have a frequency such that the film is substantially absorptive at the frequency but the substrate is not substantially absorptive at the frequency. A waveguide distributes the microwaves over the surface of the film to provide a substantially uniform dosage of microwaves over the surface of the film. The method includes depositing a film on a substrate in the processing chamber. During at least a portion of the time of the depositing step, microwaves are generated having a frequency such that the film has an absorption peak at the frequency but the substrate lacks a substantial absorption peak at the frequency. The microwaves are directed towards the film.

摘要翻译： 一种用于对处理室中的基板上的膜进行退火的系统和方法，该处理室包括微波发生器，微波发生器被设置成向腔室内部的区域提供微波。 微波的频率使得膜在频率上基本上是吸收性的，但是基底在频率上基本上不吸收。 波导将微波分布在膜的表面上，以在膜的表面上提供基本上均匀的微波用量的微波。 该方法包括在处理室中的衬底上沉积膜。 在沉积步骤的至少一部分时间内，产生具有频率使得该膜在频率处具有吸收峰但基底在该频率处缺少实质吸收峰的频率的微波。 微波指向电影。