Abstract:
A liquid crystal display unit produces image carrying light through a liquid crystal layer having a positive anisotropy of refractive index; an optically compensating layer with a negative anisotropy of refractive index is provided on an optical path of the image carrying light so as to compensate the optical anisotropy of the liquid crystal, and the image carrying light is incident onto an optically diffusing layer after the optical compensation so as to widen the viewing angle of the liquid crystal display unit without deterioration of image contrast.
Abstract:
A data inverting circuit which operates stably at high speed without a negative-feedback loop includes operational amplifier 13 for generating, from inverting reference voltage VREF applied from an external source, a voltage which is twice the inverting reference voltage, and outputting the generated voltage between node N1 and ground line 4. Bipolar transistor Q1 has a base supplied with analog input signal VIN and a collector connected to resistor R6, which is connected to the emitter of transistor Q2 connected as a diode and having a base connected to node N1. The emitter of transistor Q1 is connected to ground line 4 through resistor R7 having the same resistance as resistor R6.
Abstract:
A high-quality thin-film transistor array. The gate insulating film below the pixel electrode is etched off in its entirely or along a slit extending along a drain bus line in order to simultaneously remove the residual a-Si produced due to defective patterning. The insulating film is interposed between a drain bus line and a pixel electrode to form a boundary separating layer therebetween. The reject ratio is suppressed by reducing the occurrence of point defects of semi-bright spots, ascribable to capacitative coupling to the pixel electrodes as a result of interconnection of the residual a-Si produced by defective patterning to the drain bus line.
Abstract:
An active matrix liquid crystal display has a thin film transistor array which includes scanning lines, signal lines, pixel electrodes, and display thin film transistors. This active matrix liquid crystal display includes, around the image region of the thin film transistor array, a scanning line reference potential line, surge protecting circuits for connecting the scanning lines with the scanning line reference potential line, a signal line reference potential line, and surge protecting circuits for connecting the signal lines with the signal line reference potential line. When a surge voltage is applied to the scanning line or signal line, electric charge is let go to the scanning line reference potential line or signal line reference potential line, respectively. Arbitrary reference potentials can be applied to the scanning line reference potential line and signal line reference potential line. The surge protecting circuit includes two two-terminal thin film transistors.
Abstract:
A pixel electrode and a counter electrode of an active matrix liquid crystal display unit are respectively covered with orientation layers differently rubbed, one end portion of the pixel electrode forms an accumulating capacitor together with a gate line and a gate insulating layer inserted therebetween, and the one end portion is varied in width along the gate line so as to confine a disclination line into the liquid crystal over the gate line.
Abstract:
A high-quality thin-film transistor array. The gate insulating film below the pixel electrode is etched off in its entirely or along a slit extending along a drain bus line in order to simultaneously remove the residual a-Si produced due to defective patterning. The insulating film is interposed between a drain bus line and a pixel electrode to form a boundary separating layer therebetween. The reject ratio is suppressed by reducing the occurrence of point defects of semi-bright spots, ascribable to capacitative coupling to the pixel electrodes as a result of interconnection of the residual a-Si produced by defective patterning to the drain bus line.
Abstract:
A thin-film transistor (TFT) array for preventing the light reflected inside a liquid crystal panel from entering a channel layer, while suppressing an increase of stray capacitance. A light shading film and an antireflection film atop source and drain electrodes are made of semiconductor layers and are spaced from each other on a TFT. The reduction in reflected light prevents an increase in an off current and therefore improves the quality of a liquid crystal display.
Abstract:
In a liquid crystal display device including first and second substrate members, a layer of a liquid crystal material between the first and the second substrate members, an active switching element formed on the first substrate member, a pixel electrode connected to the active switching element and which has first and second portions, a primary signal line connected to the pixel electrode, a secondary signal line adjacent to the primary signal line with the pixel electrode interposed therebetween, a scanning line connected to the pixel electrode, the first portion of the pixel electrode is nearer to the primary signal line than to the secondary signal line while the second portion of the pixel electrode is nearer to the secondary signal line than to the primary signal line.
Abstract:
A signal level converting circuit includes an input terminal supplied with an input signal, a reference terminal supplied with a reference voltage, a differential circuit having a first input node, a second input node and an output node, a first level-shift circuit including a first emitter-follower transistor and coupled between the input terminal and the first input node of the differential circuit to level-shift the input signal and supply a level-shifted signal to the first input node, and a second level-shift circuit including a second emitter-follower transistor and coupled between the reference terminal and the second input node of the differential circuit to level-shift the reference voltage and supply a level shifted reference voltage to the second input node.
Abstract:
A semiconductor device having a bipolar transistor with a trench is disclosed. An active region of the substrate is surrounded by the trench. Collector, base and emitter regions of the transistor are formed in the active region. A collector electrode is formed in a lower section of the trench, and a base electrode is formed in an upper section of the identical trench.