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    APPARATUS AND METHOD FOR PROVIDING LOCATION INFORMATION
    2.
    发明申请
    APPARATUS AND METHOD FOR PROVIDING LOCATION INFORMATION 审中-公开
    用于提供位置信息的装置和方法

    公开(公告)号：US20130237248A1

    公开(公告)日：2013-09-12

    申请号：US13989700

    申请日：2011-11-24

    申请人： Kyong-Ha Park ,  Gye-Joong Shin ,  Hyun-Su Hong ,  Sung-Min Park ,  Ji-Heon Oh

    发明人： Kyong-Ha Park ,  Gye-Joong Shin ,  Hyun-Su Hong ,  Sung-Min Park ,  Ji-Heon Oh

    IPC分类号： H04W24/00

    CPC分类号： H04W24/00 ,  G01S19/34 ,  H04W4/029 ,  H04W64/00

    摘要： A method and apparatus for providing location information are provided. The method includes estimating location information is estimated, calculating an error value of the estimated location information, controlling activation of a location determination module according to the error value, and providing location information using at least one of the estimated location information and location information determined by the location determination module.

    摘要翻译： 提供了一种用于提供位置信息的方法和装置。 所述方法包括估计位置信息，估计位置信息的误差值，根据误差值控制位置确定模块的激活，以及使用由所述估计位置信息和位置信息确定的位置信息中的至少一个来提供位置信息 位置确定模块。

    MULTI INDUCTIVELY COUPLED PLASMA REACTOR AND METHOD THEREOF
    8.
    发明申请
    MULTI INDUCTIVELY COUPLED PLASMA REACTOR AND METHOD THEREOF 审中-公开
    多电感耦合等离子体反应器及其方法

    公开(公告)号：US20110204023A1

    公开(公告)日：2011-08-25

    申请号：US12715522

    申请日：2010-03-02

    申请人： No-Hyun Huh ,  Gyoo-Dong Kim ,  Chang-Woo Nam ,  Sung-Min Park ,  Dae-Kyu Choi

    发明人： No-Hyun Huh ,  Gyoo-Dong Kim ,  Chang-Woo Nam ,  Sung-Min Park ,  Dae-Kyu Choi

    IPC分类号： C23F1/00 ,  C23F1/08

    CPC分类号： H01J37/32165 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32449

    摘要： Disclosed is a multi-inductively coupled plasma reactor and method thereof. In a multi-inductively coupled plasma reacting method, an etching method to increase a specific portion of a substrate to be processed includes etching a specific portion of a substrate to be processed; and depositing a passivation layer on a surface of the specific portion etched, wherein the etching and depositing steps are repeatedly proceeded, and one of both steps is executed when there is plasma formed by a central plasma source and a peripheral plasma source. According to the multi-inductively coupled plasma reactor and method thereof of the invention, it is possible that plasma is uniformly processed on the entire area of the substrate since the central plasma source and the peripheral source are provided separately. Further, it is possible to form an independent multiple plasma area without electrical interference in the plasma reactor using the interference prevention electrode grounded between the central plasma source and the peripheral plasma source. Further, the plasma formed by the central plasma source and the peripheral plasma source is used to deeply etch a specific portion of the substrate to be processed.

    摘要翻译： 公开了一种多电感耦合等离子体反应器及其方法。 在多电感耦合等离子体反应方法中，用于增加要处理的衬底的特定部分的蚀刻方法包括蚀刻要处理的衬底的特定部分; 以及在蚀刻的特定部分的表面上沉积钝化层，其中反复进行蚀刻和沉积步骤，并且当存在由中心等离子体源和外围等离子体源形成的等离子体时，执行两个步骤之一。 根据本发明的多电感耦合等离子体反应器及其方法，由于中心等离子体源和外围源分别设置，因此可以在衬底的整个区域上均匀地处理等离子体。 此外，可以使用在中心等离子体源和外围等离子体源之间接地的防干扰电极在等离子体反应器中形成无电干扰的独立多等离子体区域。 此外，由中央等离子体源和外围等离子体源形成的等离子体用于深刻蚀刻待处理衬底的特定部分。

    Comparator circuit for comparing three inputs
    9.
    发明授权
    Comparator circuit for comparing three inputs 有权
    用于比较三个输入的比较器电路

    公开(公告)号：US07986169B2

    公开(公告)日：2011-07-26

    申请号：US12642088

    申请日：2009-12-18

    申请人： Sung-Min Park ,  Seok-Hoon Bang

    发明人： Sung-Min Park ,  Seok-Hoon Bang

    IPC分类号： H03K5/22

    CPC分类号： H03F3/45183 ,  H03F2200/78 ,  H03F2203/45638

    摘要： A comparator circuit. A comparator circuit may include a differential amplifying unit to amplify a difference between a voltage at a first node and a voltage at a second node and/or output a resultant voltage, and/or a current source to supply a first bias current to a first node and/or supply a second bias current to a second node. A comparator may include a first bias switch to bias a current flowing from a first node to a ground voltage source, a second bias switch to bias a part of a current flowing from a second node to a ground voltage source, a third bias switch to bias a remaining part of a current flowing from a second node to a ground voltage source, and/or a bias converting unit to supply a third bias current to a second node.

    摘要翻译： 比较器电路。 比较器电路可以包括差分放大单元，用于放大第一节点处的电压和第二节点处的电压之间的差和/或输出合成电压，和/或电流源，以将第一偏置电流提供给第一节点 节点和/或向第二节点提供第二偏置电流。 比较器可以包括用于偏置从第一节点流向地电压源的电流的第一偏置开关，用于偏置从第二节点流向地电压源的电流的一部分的第二偏压开关，第三偏压开关 偏置从第二节点流向地电压源的电流的剩余部分，和/或偏置转换单元，以向第二节点提供第三偏置电流。

    COMPARATOR CIRCUIT FOR COMPARING THREE INPUTS
    10.
    发明申请
    COMPARATOR CIRCUIT FOR COMPARING THREE INPUTS 有权
    用于比较三个输入的比较器电路

    公开(公告)号：US20100164627A1

    公开(公告)日：2010-07-01

    申请号：US12642088

    申请日：2009-12-18

    申请人： Sung-Min Park ,  Seok-Hoon Bang

    发明人： Sung-Min Park ,  Seok-Hoon Bang

    IPC分类号： H03F3/45

    CPC分类号： H03F3/45183 ,  H03F2200/78 ,  H03F2203/45638

    摘要： A comparator circuit. A comparator circuit may include a differential amplifying unit to amplify a difference between a voltage at a first node and a voltage at a second node and/or output a resultant voltage, and/or a current source to supply a first bias current to a first node and/or supply a second bias current to a second node. A comparator may include a first bias switch to bias a current flowing from a first node to a ground voltage source, a second bias switch to bias a part of a current flowing from a second node to a ground voltage source, a third bias switch to bias a remaining part of a current flowing from a second node to a ground voltage source, and/or a bias converting unit to supply a third bias current to a second node.

    摘要翻译： 比较器电路。 比较器电路可以包括差分放大单元，用于放大第一节点处的电压和第二节点处的电压之间的差和/或输出合成电压，和/或电流源，以将第一偏置电流提供给第一节点 节点和/或向第二节点提供第二偏置电流。 比较器可以包括用于偏置从第一节点流向地电压源的电流的第一偏置开关，用于偏置从第二节点流向地电压源的电流的一部分的第二偏压开关，第三偏压开关 偏置从第二节点流向地电压源的电流的剩余部分，和/或偏置转换单元，以向第二节点提供第三偏置电流。